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Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025

Citation:

Nidhal, Abdelmalek, Djeffal Fayçal, and Bentrcia Toufik. 2018. “Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025”. Journal of Computational Electronics Vloume. 17 ( Issue 2) : pp 724-735.

Abstract:

A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ" id="MathJax-Element-1-Frame" role="presentation" style="position:relative;" tabindex="0">κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.

Publisher's Version

See also: Publications Internationales, Équipe 4 - Technologie des semi-conducteurs, Catégorie A