@article {4047,
	title = {Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Vloume. 17},
	number = { Issue 2},
	year = {2018},
	pages = {pp 724-735},
	abstract = {A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1141-9},
	author = {Abdelmalek Nidhal and Djeffal Fay{\c c}al and Bentrcia Toufik}
}
