Citation:
Abstract:
The rapid progress of wide band gap SiC semiconductor material opens up new opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and power systems for a wide range of advanced applications. In this paper, low-noise solar-blind UV photodetector (PD) based on all-amorphous ZnO/SiC heterostructure was fabricated via RF magnetron sputtering technique. The device structural and optical properties were investigated before and after thermal treatment at different annealing temperature values varying from 300 °C to 600 °C. UV-Visible spectroscopy revealed that the annealing process has a beneficial effect in terms of high UV absorbance and solar-blindness properties. Photoelectrical characterization demonstrated the high UV photoresponse and low dark noise of the prepared UV PD based on all-amorphous ZnO/SiC structure. Improvement of the device performances were achieved by an appropriate annealing process. After post-annealing, the thermally treated ZnO/SiC UV PD at 500 °C exhibits a high detectivity of 2.4 × 1012 Jones, high signal to noise ratio of 2.64×105 and a giant UV–Vis rejection ratio of 5.9 × 103. Therefore, the present study may provide new perspectives for fabricating ultralow dark noise solar-blind UV PD based on all-amorphous ZnO/SiC heterostructure, which promotes the development of integrated UV photonic systems based on SiC platform.