<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">A Saidi</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Non-Crystalline Solids</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0022309321005317</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">574</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	The rapid progress of wide band gap SiC semiconductor material opens up new opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and power systems for a wide range of advanced applications. In this paper, low-noise solar-blind UV&amp;nbsp;photodetector&amp;nbsp;(PD) based on all-amorphous ZnO/SiC&amp;nbsp;heterostructure&amp;nbsp;was fabricated via RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique. The device structural and optical properties were investigated before and after thermal treatment at different annealing temperature values varying from 300&amp;nbsp;°C to 600&amp;nbsp;°C. UV-Visible&amp;nbsp;spectroscopy revealed that the annealing process has a beneficial effect in terms of high UV absorbance and solar-blindness properties. Photoelectrical characterization demonstrated the high UV photoresponse and low dark noise of the prepared UV PD based on all-amorphous ZnO/SiC structure. Improvement of the device performances were achieved by an appropriate annealing process. After post-annealing, the thermally treated ZnO/SiC UV PD at 500&amp;nbsp;°C exhibits a high detectivity of 2.4&amp;nbsp;×&amp;nbsp;10&lt;sup&gt;12&lt;/sup&gt;&amp;nbsp;Jones, high&amp;nbsp;signal to noise ratio&amp;nbsp;of 2.64×10&lt;sup&gt;5&lt;/sup&gt;&amp;nbsp;and a giant UV–Vis&amp;nbsp;rejection ratio of 5.9&amp;nbsp;×&amp;nbsp;10&lt;sup&gt;3&lt;/sup&gt;. Therefore, the present study may provide new perspectives for fabricating ultralow dark noise solar-blind UV PD based on all-amorphous ZnO/SiC heterostructure, which promotes the development of integrated UV photonic systems based on SiC platform.
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