Abstract:

This work aims to investigate the performance of a new Junctionless (JL) Ge-gate Tunneling-FET phototransistor for Infrared sensing applications. The electrical and optical performances of the considered sensor are numerically analyzed, where both switching and optoelectronic properties are reported. In this context, we address the influence of the Ge-gate doping level and high-k gate dielectric on the variation of optical Figures-of-Merit (FoMs) parameters such as responsivity, I_ON/I_OFF ratio and optical commutation speed. Interestingly, it was revealed that the proposed design provides promising pathways for enhancing the phototransistor FoMs as compared to the conventional FET-based sensors. In the second stage of our investigation, we provide a performance assessment of the proposed phototransistor by analyzing its switching capabilities as compared to the conventional design, where the device is implemented in an optical inverter circuit. The obtained results indicate the superior optoelectronic performance offered by the proposed design in comparison with the conventional devices in terms of optical commutation speed and optoelectronic gain. Therefore, this contribution can provide new insights concerning the benefit of adopting JL-TFET design for future high-performance and ultra-low power deep submicron CMOS optoelectronic applications.

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