@article {6788,
	title = {Performance assessment of a new infrared phototransistor based on JL-TFET structure: Numerical study and circuit level investigation},
	journal = {Optik },
	volume = {223},
	year = {2020},
	abstract = {
	This work aims to investigate the performance of a new Junctionless (JL)\&nbsp;Ge-gate Tunneling-FET\&nbsp;phototransistor\&nbsp;for Infrared sensing applications. The electrical and optical performances of the considered sensor are numerically analyzed, where both switching and optoelectronic properties are reported. In this context, we address the influence of the\&nbsp;Ge-gate doping level and high-k\&nbsp;gate dielectric\&nbsp;on the variation of optical Figures-of-Merit (FoMs) parameters such as\&nbsp;responsivity,\&nbsp;ION/IOFF\&nbsp;ratio and optical commutation speed. Interestingly, it was revealed that the proposed design provides promising pathways for enhancing the phototransistor\&nbsp;FoMs\&nbsp;as compared to the conventional\&nbsp;FET-based sensors. In the second stage of our investigation, we provide a performance assessment of the proposed phototransistor by analyzing its switching capabilities as compared to the conventional design, where the device is implemented in an optical\&nbsp;inverter\&nbsp;circuit. The obtained results indicate the superior optoelectronic performance offered by the proposed design in comparison with the conventional devices in terms of optical commutation speed and optoelectronic gain. Therefore, this contribution can provide new insights concerning the benefit of adopting\&nbsp;JL-TFET\&nbsp;design for future high-performance and ultra-low power deep submicron CMOS optoelectronic applications.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402620313073},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Drissi, Lalla Btissam}
}
