Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications

Citation:

Fayçal, Djeffal. 2018. “Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications”. ICSENT .

Publisher's Version

See also: Communications Internationales, Équipe 4 TSC, Catégorie C TSC

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