@proceedings {4645,
	title = {Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications},
	journal = {ICSENT },
	year = {2018},
	url = {https://doi.org/10.1145/3330089.3330470},
	author = {Djeffal Fay{\c c}al}
}
