Abstract:

In this paper, a graded channel doping paradigm is proposed to improve the nanoscale double gate junctionless DGJL MOSFET electrical performance. A careful mechanism study based on numerical investigation and a performance comparison between the proposed and conventional design is carried out. The device figures-of-merit, governing the switching and leakage current behavior are investigated in order to reveal the transistor electrical performance for ultra-low power consumption. It is found that the channel doping engineering feature has a profound implication in enhancing the device electrical performance. Moreover, the impact of the high-k gate dielectric on the device leakage performance is also analyzed. The results show that the proposed design with gate stacking demonstrates superior ION/IOFF" id="MathJax-Element-1-Frame" role="presentation" style="position:relative;" tabindex="0">ION/IOFF ratio and lower leakage current as compared to the conventional counterpart. Our analysis highlights the good ability of the proposed design including a high-k gate dielectric for the reduction of the leakage current. These characteristics underline the distinctive electrical behavior of the proposed design and also suggest the possibility for bridging the gap between the high derived current capability and low leakage power. This makes the proposed GCD-DGJL MOSFET with gate stacking a potential alternative for high performance and ultra-low power consumption applications.

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