We propose a new approach for modeling a High Electron Mobility Transistor (HEMT) using that of Gaussian Process Regression one (GPR), to improve the current-voltage characteristics of HEMT transistor for using in electronic and biological domain or any other domain that needs it. The study and development of a new Atlas Silvaco device are taking into account the impact of several geometric and electric parameters; we focus on the electrical performances of the double gate field plate In0.2Ga0.8As/Al0.3Ga0.7As HEMT including double heterostructure; we compare the numerical simulation using 2D Atlas Silvaco simulator with the extracted experimental results. Then we validate our model by GPR approach. The GPR approach opens promising opportunities for devices modeling without knowing too much the device physics properties. The obtained results give better performances which lead to fabricate devices with better electrical properties for promoting further investigation.

This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.