The quasiparticle band structures and optical properties of ACdTS kesterite are investigated here on the basis of first-principles calculations, including the many-body effects theory, by using the GW plus Bethe-Salpeter equation. There were significant GW-quasiparticle corrections, over 0.9 eV, to the GGA-Kohn-Sham band gap. Our calculations also show that ACdTS kesterite had a small binding energy, exhibited optical absorption in the visible region, high minority carrier mobility, and large diffusion in length, rendering this material a promising candidate for solar cells. Based on these findings, we designed and implemented an ACdTS absorber in a thin-film solar cell (TFSC) structure. The new kesterite solar cell has a high efficiency of 11.6% with a low deficit in the output voltage. Moreover, a strategic combination between the particle swarm optimization approach and the ACdTS TFSC decorated with periodic nanowires is proposed to obtain significantly improved photovoltaic characteristics. The optimized design identifies a new pathway for a high conversion efficiency of 14%, far surpassing that provided by the conventional TFSC kesterite.
Tunnel FETisone of thealternativedevicefor low power electronics having steep subthreshold swing and lower leakage current than conventional MOSFET. In this research work, we have implemented the idea of high -k gate dielectric ondouble gate Tunnel FET, DG-TFETfor improvement of device features.An extensive investigation for the analog/RF and linearity feature of DG-TFET has been donehere for low power circuit and system development.Several essential analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS) its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain band width product (GBW), transconductance generation factor (gm/IDS) has been investigated for low power RF applications.The VIP2, VIP3, IMD3, IIP3, distortion characteristics (HD2, HD3), 1- dB the compression point, delay and power delay product performancehave also been throughly studied.It has been observed that the device features discussed for circuitry applications are found to be sensitiveto of gate materials, design configuration and input signals.
Tunnel FET is one of the promising devices advocated as a replacement of conventional MOSFET to be used for low power applications. Temperature is an important factor affecting the performance of circuits or system, so temperature associated reliability issues of double gate Tunnel FET and its impact on essential circuit design components have been addressed here. The temperature reliability investigation is based on double gate Tunnel FET, containing Si1-xGe x /Si, source/channel and HfO2 high-k gate dielectric material. During investigation, it has been found that at high temperature application range ~ 300 K - to - 600 K,the Tunnel FET device design parameters exhibit weak temperature dependency with switching current (ION), while the off-state current (IOFF) is slightly varying ~10−17A/μm-to-10−10A/μm. In addition, the impact of temperature on various device design element such as VTH(i.e.,switching voltage),on-current (ION), off-current (IOFF), switching ratio (ION/IOFF) and average subthreshold slope (i.e., SSavg), ambipolar current (IAMB) have been done in this research work.The essential circuit design components for digital and analog/RF applications, such as current amplification factor(gm) and its derivative (gm’),the C-V components of device design, Cgg, Cgd and Cgs, cut - off frequency (ƒT) and gain band width (GBW) product have deeply investigated. In conclusion, the obtained results show that the designed double gate Tunnel FET device configuration and its circuit design components are suitable for ultra-low power circuit,system applications and reliable for hazardous temperature environment.
The development of CZTS-based solar cells is limited by two factors, the low open circuit voltage and the conversion efficiency. This is why, in this study, the impact of Cu2ZnSnS4 (CZTS) absorber thin layer parameters on the performance of the proposed MoS2/CZTS/CdS/ZnO heterostructure is simulated by the standard software SCAPS-1D. The improving output performances of this structure; the open circuit voltage (Voc), the short circuit current density (Jsc), the fill factor (FF) and the efficiency (h) are obtained by varying the absorber layer thickness, acceptor carrier concentration NA and taking into account the effect of the electron work function of the back metal contact. The optimized cell provides an energy conversion efficiency of 15.23% (Voc = 0.99 V, Jsc = 21.89 mA/cm2, FF = 69.79%) for an optimal thickness of 2 μm, a doping of 1×1016 cm-3. Performance enhancement of the proposed solar cell is subject to the back metal contact, the optimal simulated value of 5.7 eV of which represents that of the Platinum’s work function Pt. The interest of this simulation makes it possible to adjust the solar cells dimensions, optimize the absorbent layers doping, choose appropriately the back metal contact and therefore help to considerably reduce the various recombination phenomena as well as the secondary phases.
Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2 , Voc = 0.757 V, FF = 65.6%, ɳ = 6.9%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 µm) and (ND = 1016 cm-3 ). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1%, Voc of 0.961 mV, FF of 67.3% and Jsc of 20.2 mA/cm2 .
The numerical simulation tool SCAPS-1D was used to analyze perovskite solar cell having the architecture ITO/ PEDOT:PSS or GO /CH3NH3PbI3-xClx/ PCBM /Au contains inverted planar hetero-junction device. In this work, we investigated the effect of inserting the Graphene Oxide (GO) as Hole Transport layer (HTL) on the performance of perovskite solar cells. Simulation results show that the use of GO as a hole transport layer is efficient. The efficiency of PSCs based on GO HTL was increased by about 1.6 % compared to the conventional PEDOT:PSS HTL device. The obtained results of optimizing the thickness of GO HTL exhibited an optimum value around 10 nm with an efficiency of 12.35 %, Voc of 1.19 V and FF of 54.8 %. We have also shown that the performance of device for high GO carrier density is a better than with low ones. In addition, increasing the temperature beyond the optimum value obtained around 320 K for both HTL materials (GO and PEDOT:PSS) has detrimental effect on the performance of the perovskite solar cells however the device is more sensitive to the temperature with PEDOT:PSS than the GO ones. The effect of band gap of GO on the performance of device is also studied. The obtained results underline the determining role playedby this parameter with an optimum value around 3.25 eV.
Phosphorus nickel alloy, intended for anticorrosion coating, was prepared and deposited at room temperature on copper substrate by chronoamperometry technique in a sulphate bath. The effect of potential on the chemical composition, nucleation and growth, the structure and surface morphology during the electrodeposition of this alloy was presented in this work. X-ray microanalysis showed that the content of phosphorus in the prepared alloys decreases with increasing cathodic potential. Chronoamperograms analysis indicated that the nucleation process is instantaneous and of three-dimensional (3D) growth and is controlled by kinetics. X-ray diffraction analysis revealed an amorphous structure while SEM images showed a smooth appearance with pore presence.
In this paper, a new heterojunction structure based on ultrathin-film ITO sputtered on non-hydrogenated amorphous-silicon (a-Si) is developed for high-detectivity solar-blind UV-photodetector (UV-PD) based on silicon (Si) photonics technology. A strategic combination of Particle Swarm Optimization (PSO) and numerical analysis is used to find out the best design offering superior optoelectronic performance. The optimized design is then elaborated using RF magnetron sputtering technique. A comprehensive investigation of the device structural and optoelectronic properties was carried out, incorporating the influence of heat treatment at temperature values ranging from 300°C to 600°C. X-Ray Diffraction (XRD) measurements indicate that the crystallinity of the sputtered layers was enhanced by increasing the annealing temperature. Significantly, photoelectrical characterization showed that the annealed ITO/a-Si UV-PD exhibits high detectivity exceeding 1013 Jones with a highly improved UV-to-Vis rejection ratio of 5.7 × 103. The ITO/a-Si heterojunction generated a built-in potential, enabling effective separation and transport of photo-induced carriers, thereby reducing recombination losses. Therefore, by well optimizing the proposed heterostructure and the annealing conditions, we were able to elaborate new highly detective, thin-film solar-blind UV-PD based on Si-photonics platform, which can be a promising alternative for future high-performance and cost-effective optoelectronic systems.
In this paper, the optimization, elaboration and characterization of an efficient spectral beam splitter based on a simple RF sputtered ITO/Ag/ITO (IAI) ultra-thin multilayer structure are presented. An experimental investigation assisted by Genetic Algorithm (GA) metaheuristic optimization was carried out to achieve high-performance spectral splitter for tandem solar cell applications. The RF magnetron sputtering method was used to elaborate the optimized IAI structure. The optical and structural properties of the sputtered splitter were also analyzed using UV–Vis-IR spectroscopy and X-ray diffraction (XRD) measurements. It is found that the elaborated splitter structure offers 84% of transparency and a high reflectance of 87% with an optimum cut-off wavelength of 800 nm. This is attributed to the design approach, which leads to promote spectral splitting mechanism by inducing efficient optical modulation. Interestingly, a new Figure of Merit (FoM) parameter, which evaluates the optical splitting performances is proposed. Moreover, a new Perovskite/InGaAs tandem cell is proposed and analyzed to show the impact of the elaborated spectrum splitter on the solar cell efficiency. It is revealed that the investigated solar cell exhibits an improved efficiency approaching 30%. The latter value far surpasses that provided by Perovskite tandem cells. These results indicate that our spectrum splitting approach can open a new pathway towards designing high-performance tandem photovoltaic devices.
High-performance multispectral photodetectors (PDs) are highly attractive for the emerging optoelectronic applications. In this work, a new broadband PD based on p-NiO/Ag/n-ITO heterostructure was fabricated by RF magnetron sputtering technique at room temperature. The tri-layered structure offering multispectral detection property was first identified using theoretical calculations based on combined FDTD and Particle Swarm Optimization (PSO) techniques. The crystal structure of the elaborated sensor was analyzed using X-ray diffraction (XRD) method. The device optical properties were investigated by UV–Vis–NIR spectroscopy. The NiO/Ag/ITO heterostructured PD shows a high average absorbance of 63% over a wide spectrum range of [200 nm–1100nm]. Compared with NiO and ITO thin-films, the performances of the heterostructured device are considerably enhanced. It was found that the prepared PD with NiO/Ag/ITO heterostructure merges the benefits of multispectral photodetection with reduced optical losses and efficient transfer of photo-induced carrier. The device demonstrated a high ION/IOFF ratio of 78 dB and an enhanced responsivity under UV, visible and NIR lights (171 mA/W at 365 nm, 67 mA/W at 550 nm and 93 mA/W at 850 nm). The broadband photodetection property enabled by the optimized NiO/Ag/ITO heterostructure opens a new route for the elaboration of low-cost devices that can offer multiple sensing purposes, which are highly suitable for optoelectronic applications.
In this work, a new Ultraviolet Optically Controlled Graphene Field-Effect Transistor (UV-OC-GFET) based on Graded Band-Gap (GBG) ZnMgO photosensitive-gate is proposed. The device drain current model is numerically developed by self-consistently solving the Schrödinger/Poisson equations based on non-equilibrium Green's function (NEGF) formalism. The influence of GBG strategy with different profiles on the device sensing performances is analyzed. Our investigation reveals that the use of both GBG ZnMgO photo-gate and graphene nanoribbon channel offers the dual-benefit of improved electric field distribution in the photosensitive layer and enhanced drain current. This leads to outperforming the device Figure of Merits (FoMs). In this context, it is found that the proposed UV sensor with optimized band-gap profile exhibits giant responsivity exceeding 1.5 × 106 A/W with superb detectivity of 7 × 1014 Jones, far surpassing that of the conventional Si-channel based phototransistors. Therefore, this innovative strategy based on graphene nanoribbon channel combined with GBG sensitive-gate pinpoints a new path towards achieving high-performance visible-blind UV-phototransistor, making it a potential alternative photoreceiver for chip-level optical communication and optoelectronic applications.
In this paper, embedded amorphous-silicon (a-Si) and titanium (Ti) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (TFSCs). Promising design strategy based on combining FDTD (finite difference time domain) with particle swarm optimization (PSO) was adopted to identify the a-Si/Ti multilayer structure offering the highest total absorbance efficiency (TAE). It is found that the proposed multilayer structure can serve as an effective absorber, yielding superb TAE exceeding 80%. The a-Si/Ti multilayer was then elaborated by successive growth of a-Si and Ti ultrathin layers using RF magnetron sputtering technique. The sputtered a-Si/Ti thin-film was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV–visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even NIR spectrum ranges. In particular, the prepared a-Si/Ti absorber exhibits an optical band-gap of 1.36 eV, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting I-V characteristics and electrical parameters under dark and 1-sun illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized a-Si/Ti multilayer provides a sound pathway for designing promising alternative absorbers for the future development of a-Si-based TFSCs.
The rapid progress of wide band gap SiC semiconductor material opens up new opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and power systems for a wide range of advanced applications. In this paper, low-noise solar-blind UV photodetector (PD) based on all-amorphous ZnO/SiC heterostructure was fabricated via RF magnetron sputtering technique. The device structural and optical properties were investigated before and after thermal treatment at different annealing temperature values varying from 300 °C to 600 °C. UV-Visible spectroscopy revealed that the annealing process has a beneficial effect in terms of high UV absorbance and solar-blindness properties. Photoelectrical characterization demonstrated the high UV photoresponse and low dark noise of the prepared UV PD based on all-amorphous ZnO/SiC structure. Improvement of the device performances were achieved by an appropriate annealing process. After post-annealing, the thermally treated ZnO/SiC UV PD at 500 °C exhibits a high detectivity of 2.4 × 1012 Jones, high signal to noise ratio of 2.64×105 and a giant UV–Vis rejection ratio of 5.9 × 103. Therefore, the present study may provide new perspectives for fabricating ultralow dark noise solar-blind UV PD based on all-amorphous ZnO/SiC heterostructure, which promotes the development of integrated UV photonic systems based on SiC platform.
