Publications

Les efforts fournis par les membres des différentes équipes, depuis la création du laboratoire en 2001, ont abouti à la publication d’un bon nombre d’articles scientifiques publiés dans des revues internationales de renommé établie comme le témoigne la liste des publications données ci-après.

2019

Determination of magnetic properties of a Ni/NiO/Ni multilayer: an ANFIS-based predictive technique
Appl. Phys. A (2019) 125: 56
A. Bendjerad, A. Benhaya, T. Bentercia, F. Djeffal, M. Zergoug and F. Smaili

2018

Enhanced optical and electrical performances of UV-phototransistor using graded band-gap ZnMgO photosensitive gate
Journal of Computational Electronics, Accepted paper, 2018 (Indexed by: Scopus/ISI Thomson/IF= 1.52)
H. Ferhati, F Djeffal

A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube
Measurement, vol. 125, pp. 232-242, 2018 (Indexed by: Scopus/ISI Thomson/IF= 2.36)
F. Menacer, Z. Dibi, A Kadri, F. Djeffal

Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects
Journal of Nanoelectronics and Optoelectronics, vol. 13, pp. 1106-1113, 2018 (Indexed by: Scopus/ISI Thomson/IF= 0.49)
H. Ferhati, F. Djeffal

The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability
Beilstein Journal of Nanotechnology, vol. 9, pp. 1856-1862, 2018 (Indexed by: Scopus/ISI Thomson/IF= 3.1)
H. Ferhati, F. Djeffal, T Bentrcia

A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 901, pp. 32-39, 2018 (Indexed by: Scopus/ISI Thomson/IF= 1.36)
K. Tamersit, F. Djeffal

Role of ITO ultra-thin layer in improving electrical performance and thermal reliability of Au/ITO/Si/Au structure: An experimental investigation
Superlattices and Microstructures, vol. 120, pp. 419-426, 2018 (Indexed by: Scopus/ISI Thomson/IF= 2.12)
A. Benhaya, F. Djeffal, K. Kacha, H. Ferhati, A. Bendjerad

Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
Journal of Computational Electronics, vol. 17, pp. 724-735, 2018 (Indexed by: Scopus/ISI Thomson/IF= 1.52)
N. Abdelmalek, F. Djeffal, T. Bentrcia

Boosting the optical performance and commutation speed of phototransistor using SiGe/Si/Ge tunneling structure
Mater. Res. Express, vol. 5, pp. 065902, 2018 (Indexed by: Scopus/ISI Thomson/IF= 1.15)
H. Ferhati, F. Djeffal

Role of Graded Channel Doping Engineering in Improving Junctionless GAA MOSFET Performance for Ultra Low-Leakage Power Applications
Journal of Nanoelectronics and Optoelectronics, vol. 13, pp. 521-530, 2018 (Indexed by: Scopus/ISI Thomson/IF= 0.49)
H. Ferhati, F. Djeffal

Role of intermediate metallic sub-layers in improving the efficiency of kesterite solar cells: concept and optimization
Mater. Res. Express, vol. 5, pp. 036417, 2018 (Indexed by: Scopus/ISI Thomson/IF= 1.15)
H. Ferhati, F. Djeffal

Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications
Journal of Computational Electronics, vol. 17, pp. 129-137, 2018 (Indexed by: Scopus/ISI Thomson/IF= 1.52)
H. Ferhati, F. Djeffal

Graded band-gap engineering for increased efficiency in CZTS solar cells
Optical Materials, vol. 76, pp. 393-399, 2018 (Indexed by: Scopus/ISI Thomson/IF= 2.23)
H. Ferhati, F. Djeffal

Optimizing the optical performance of ZnO/Si-based solar cell using metallic nanoparticles and interface texturization
Optik-International Journal for Light and Electron Optics, vol. 153, pp. 43-49, 2018 (Indexed by: Scopus/ISI Thomson/IF= 0.74)
H. Ferhati, F. Djeffal, K. Kacha

Role of non-uniform Ge concentration profile in enhancing the efficiency of thin-film SiGe/Si Solar Cells
Optik-International Journal for Light and Electron Optics, vol. 158, pp. 192-198, 2018 (Indexed by: Scopus/ISI Thomson/IF= 0.74)
H. Ferhati, F. Djeffal

2017

A novel high-performance self-powered ultraviolet photodetector: Concept, analytical modeling and analysis
Superlattices and Microstructures, vol. 112, pp.480-492, 2017. (Indexed by: Scopus/ISI Thomson/IF= 2.12)
H. Ferhati, F. Djeffal

Efficiency Enhancement of a-Si:H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters
Physica Status Solidi (C) Current Topics in Solid State Physics, vol.14, pp.147-152, 2017 (Indexed by: Scopus)
H. Ferhati, F. Djeffal, D Arar, Z. Dibi

Improved Reliability Performance of Junctionless Nanoscale DG MOSFET with Graded Channel Doping Engineering
Physica Status Solidi (C) Current Topics in Solid State Physics, vol.14, pp.146-152, 2017 (Indexed by: Scopus)
T. Bentrcia, F. Djeffal, D Arar, E. Chebaki

Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects
Superlattices and Microstructures, vol. 109, pp.869-879, 2017. (Indexed by: Scopus/ISI Thomson/IF= 2.12)
H. Ferhati, F. Douak, F. Djeffal

Improved ZnO/glass thin film UV photodetector performance based on introduction of intermediate metallic sub-layers
Materials Today: Proceedings, vol. 4, pp.6804-6813, 2017 (Indexed by: Scopus)
H. Ferhati, F Djeffal

A Kriging framework for the efficient exploitation of the nanoscale junctioless DG MOSFETs including source/drain extensions and hot carrier effect
Materials Today: Proceedings, vol. 4, pp.6930-6937, 2017 (Indexed by: Scopus)
T. Bentrcia, F Djeffal, E. Chebaki, D. Arar

Role of metal layer in improving the UV-photodetector performance of TiO2/Metal/TiO2/Si structure
Journal of Luminescence, vol. 191, Part B, pp. 117-121, 2017. (Indexed by: Scopus/ISI Thomson/IF= 2.7)
H Ferhati, F Djeffal, D Arar, Z Dibi

Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications
Optics & Laser Technology, vol. 97, pp. 29-35, 2017. (Indexed by: Scopus/ISI Thomson/IF= 2.2)
H Ferhati, F Djeffal

Novel high-performance SOI junctionless FET-based phototransistor using channel doping engineering: Numerical investigation and sensitivity analysis
Optik-International Journal for Light and Electron Optics vol. 138, pp. 119–126, 2017 (Indexed by: Scopus/ISI Thomson/IF= 0.74)
H Ferhati, F Djeffal

Efficiency increase of hybrid organic/inorganic solar cells with optimized interface grating morphology for improved light trapping
Optik-International Journal for Light and Electron Optics vol.130, pp. 1092-1098, 2017 (Indexed by: Scopus/ISI Thomson/IF= 0.74)
F Srairi, F Djeffal, H Ferhati

Enhancement of the absorbance figure of merit in amorphous-silicon pin solar cell by using optimized intermediate metallic layers
Optik-International Journal for Light and Electron Optics vol.130, 473-480, 2017 (Indexed by: Scopus/ISI Thomson/IF= 0.74)
H Ferhati, F Djeffal, F Srairi

Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors
Thin Solid Films, vol.623, pp. 1–7, 2017. (Indexed by: Scopus/ISI Thomson/IF= 1.76)
D. Rechem, K. Aicha, A. Souifi, F. Djeffal

An original way to obtain porous Zn(1–x)MgxO thin films by spray pyrolysis technique
Semiconductor Physics, Quantum Electronics & Optoelectronics, V. 20, N 1. 2017. P. 55-63
A. Mahdjoub, A. Hafid, M. Aida, A. Benhaya

Modeling of magnetic properties (Cr/NiO/Ni) based multi-layers deposited by magnetron sputtering using Preisach model
Materials and Devices, Vol 2(1), 0310 (2017)
A. Bendjerad, A. Benhaya, S. Boukhtache, M. Zergoug, K. Benyahia

RF magnetron sputtering deposition of NiO/Ni bilayer and approach of the Magnetic behavior using the Preisach model
Journal of Magnetism and Magnetic Materials 428 (2017) 377–381
A. Bendjerad, S. Boukhtache, A. Benhaya, A. Lahmar, M. Zergoug, D. Luneau

2016

Amorphous Silicon Thin-Film Transistors based Digital Circuits
Digital Information Processing, Electronics and Wireless Communications, [S.l.], Vol. 1, n. 1, p. 6
Z. HAFDI

Modeling of Magnetic Properties of Iron Thin Films Deposited by RF Magnetron Sputtering using Preisach Model
SERBIAN JOURNAL OF ELECTRICAL ENGINEERING Vol. 13, No. 2, June 2016, 229-238
A. Bendjerad, S. Boukhtache, A. Benhaya, D. Luneau, S. Abaidia, K. Benyahia

2015

ZnS thin films deposition by thermal evaporation for photovoltaic applications
J. of Semiconductors Vol.36 N°,10, oct. 2015
K. Benyahia, A. Benhaya, M.S. Aida

2014

Surface States in Amorphous Silicon Thin-Film Transistors: Modeling and Impact
World Applied Sciences Journal, Vol. 31, pp. 63-68, 2014
Z. HAFDI

2013

Design Considerations of an Amorphous Silicon Demultiplexer
Elektronika ir elektrotechnika, Vol. 19, No 8, pp. 65-68
Z. HAFDI

La Conception de Circuits Numériques en Technologie a-Si
Revue des Sciences et de la Technologie –RST, Vol. 4, No1, pp. 145-155, 2013
H. Mokhtache, Z. HAFDI

2012

 

2011

An analytical capacitance model for a hydrogenated amorphous silicon based thin-film transistor
Physics Procedia-Elsevier, Volume 21, pp. 122-127, 2011
Z. HAFDI

A new approach for semiconductor parameter extraction using cathodoluminescence and artificial neural networks
Scanning,Volume 33, Issue4, pp. 252-265, 2011
S. Soualmia, A. Bouldjedri, A. Benhaya

Semiconductor parameter extraction using cathodoluminescence and genetic algorithms
Materials science in semiconductor processing, Vol.14, N°1, pp. 62-68, 2011
S. Soualmia, A. Bouldjedri, A. Benhaya

2010

A PSO-based approach to study the nanoscale Double Gate- MOSFETs
Review of Sciences and Technology, pp. 14-22, Vol.1(2), 2010
T. Bendib, F. Djeffal, A. Benhaya

An approach based on particle swarm computation to simulate the nanoscale DG MOSFET-based circuits
Turkish Journal of Electrical Engineering & Computer Sciences, pp. 1131-1141, Vol. 18 (06), 2010
F. Djeffal, T. Bendib, R. Benzid, A. Benhaya

2009

A two-dimensional analytical analysis of subthreshold behavior to study the scaling capability of nanoscale graded channel gate stack DG MOSFETs
Physica E: Low-dimensional Systems and Nanostructures, pp. 1872-1877, 41, 2009
F. Djeffal, M. Meguellati, A. Benhaya

Particle swarm optimization versus genetic algorithms to study the electron mobility in wurtzite GaN-based devices
Solid-State Electronics,pp.388-392, 53(9), 2009
F. Djeffal, N. Lakhdar, M. Meguellati, A. Benhaya

A compact drain current model based on Genetic algorithm computation to study the nanoscale Double-Gate MOSFETs
J. Semiconductor Physics, Quantum Electronics and Optoelectronics, pp. 27-30,12(1), 2009
T. Bendib, F.Djeffal, M. Maguellati, A. Benhaya, M. Chahdi

2008

An accurate two-dimensional analytical subthreshold swing model to study the scaling capability of the surrounding-gate MOSFET
International Review of Physics. pp. 306-311, 2(5), 2008
F.Djeffal, N. Lakhdar, A. Behaya

A neural computation to study the scaling capability of the undoped DG MOSFET
J. Semiconductor Physics, Quantum Electronics and Optoelectronics, pp. 196-202, 11(2), 2008
F. Djeffal, S. Guessasma, A. Benhaya and M. Chahdi

2007

Electrical Properties of Hydrogenated Amorphous Silicon Based Thin-Film Transistors
Al-Azhar University Engineering Journal, Vol. 2, No 5, pp. 660-663, 2007
Z. HAFDI

A neural approach to study the scaling capability of the undoped Double-Gate and cylindrical Gate All around MOSFETs
Materials Sciences &Engineering B. pp.1111-1116, 27(5), 2007
F. Djeffal, A. Abdi, Z. Dibi, M.Chahdi, A.Benhaya

An approach based on neural computation to simulate the nanoscale CMOS circuits: Application to the simulation of CMOS inverter
Solid-State Electronics, pp.26-34, 51 (1), 2007
F.Djeffal, M. Chahdi, A. Benhaya, M.L.Hafiane

2006

2005

Modeling and Simulation of Hydrogenated Amorphous Silicon Thin-Film Transistors
Japanese Journal of Applied Physics, JJAP, Vol. 44, No. 3, pp. 1192-1198, 2005
Z. HAFDI, M. S. AIDA

Theoretical Study of the Sub-threshold Regime of a-Si:H TFTs
Al-Azhar University Engineering Journal, S.I, Vol. 8, No. 3, pp. 133-141
Z. HAFDI

An improved experimental setup based on programmable electronics to determine the transport coefficients of semiconductors
Advancement of Modelling and Simulation Techniques in Enterprises. pp. 55-70, 78 (6), 2005
F.Djeffal, A.Benhaya, M.Chahdi

An analytical approach based on neural computation to estimate the lifetime of deep submicron MOSFETs
Journal of Semicond. Sci. Technol. pp.158-164, 20(2), 2005
F.Djeffal, S.Guessasma, A.Benhaya, M.Chahdi

An analytical model to study the dynamic oxidation of graphite at high mass transfer rate in the diffusion controlled regime
AMSE Journal., Vol. 66, N°1, 1-6, 2005
A. Benhaya, B. Granier