Dopant diffusion in semiconductors is a very important in process step of device. diffusion has a great influence on the electrical and electronic properties especially in the lacunary and interstitial mechanismis. This chapter investigates the diffusion of P and B in Si. The profiles have been simulated using Secondary Ion Mass Spectrometry (SIMS) modele [1,2]. In the process for manufacturing MOS transistor, the manufacturers follow basically three steps. The starting substrate is a monocrystalline silicon wafer. The first step consists in producing the polysilicon gate on a thin layer of SiO2 followed by implantation (boron) of the gate. The second step is the training of source-drain junctions by ion implantation to high dose (≈ 10 15 at / cm2) and the third is to silicide the source-drain junctions for reduce the contact resistance. One of the most promising silicides is the monosilicide of nickel (NiSi). therefore, it is very important to understand the redistribution of dopants in the different active parts of a transistor by studying the following points: • The redistribution of boron in polycrystalline silicon (gate), • The redistribution of boron in the monocrystal

In this paper, we propose a new numerical method for acoustics microwaves detection of an acoustics microwaves signal during the propagation of acoustics microwaves in a piezoelectric substrate Zinc oxide (ZnO) . We have used Support Vector Machines (SVM) ,the originality of this method is the accurate values that provides .this technic help us to identify undetectable waves that we can not identify with the classical methods; in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the types of microwaves acoustics( bulk waves or surface waves or leaky waves) . By which we obtain accurate values for each of the coefficient attenuation and acoustic velocity. This study will be very interesting in modeling and realization of acoustics microwaves devices (ultrasound ,Radiating structures , Filter SAW ….) based on the propagation of acoustics microwaves.