In this paper, a new hybrid approach by combining numerical investigation and Support Vector Machines (SVMs) classifier is proposed to study the thermoelectric performance of nanoscale Double Gate Junctionless DG JL MOSFET. In this context, a new Figure of Merit (FoM) parameter which combines both electrical and reliability characteristics is proposed. Moreover, the impact of Gaussian channel doping profile (GCD) in enhancing the DG JL MOSFET reliability against the self-heating effects (SHEs) is presented. The proposed design thermal stability and electrical characteristics are investigated and compared with those of the conventional structure in order to reveal the device performance including SHEs. It is found that the amended channel doping has a profound implication in improving both the device electrical performance and the reliability against the undesired self-heating and short channel effects (SCEs). Furthermore, the transistor thermal behavior analysis involves classification of the device performance by taking into account the device reliability. For this purpose, SVMs are adopted for supervised classification in order to identify the most favorable design configurations associated with suppressed SHEs and improved electrical performance. We find that the proposed design methodology has succeeded in selecting the better designs that offer superior reliability against the SHEs. The obtained results suggest the possibility for bridging the gap between high electrical performances with better immunity to the SHEs.

In this paper, a new MSM-UV-photodetector (PD) based on dual wide band-gap material (DM) engineering aspect is proposed to achieve high-performance self-powered device. Comprehensive analytical models for the proposed sensor photocurrent and the device properties are developed incorporating the impact of DM aspect on the device photoelectrical behavior. The obtained results are validated with the numerical data using commercial TCAD software. Our investigation demonstrates that the adopted design amendment modulates the electric field in the device, which provides the possibility to drive appropriate photo-generated carriers without an external applied voltage. This phenomenon suggests achieving the dual role of effective carriers’ separation and an efficient reduce of the dark current. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to achieve improved photoelectric behavior at zero bias that can ensure favorable self-powered MSM-based UV-PD. It is found that the proposed design methodology has succeeded in identifying the optimized design that offers a self-powered device with high-responsivity (98 mA/W) and superior I_ON/I_OFF ratio (480 dB). These results make the optimized MSM-UV-DM-PD suitable for providing low cost self-powered devices for high-performance optical communication and monitoring applications.

In this paper, an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge was developed. The cavity model combined with London’s equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics of high Tc superconducting circular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials.  Merits of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, numerical results for the dielectric anisotropic substrates effects on the operating frequencies for the case of superconducting circular patch are also presented.

In this paper, the effects of both anisotropies in the substrate and superstrate loading on the resonant frequency and bandwidth of high-Tc superconducting circular microstrip patch in a substrate-superstrate configuration are investigated. A rigorous analysis is performed using a dyadic Galerkin's method in the vector Hankel transform domain. Galerkin's procedure is employed in the spectral domain where the TM and TE modes of the cylindrical cavity with magnetic side walls are used in the expansion of the disk current. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. London's equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. The accuracy of the analysis is tested by comparing the computed results with previously published data for several anisotropic substrate-superstrate materials. Good agreement is found among all sets of results. The numerical results obtained show that important errors can be made in the computation of the resonant frequencies and bandwidths of the superconducting resonators when substrate dielectric anisotropy, and/or superstrate anisotropy are ignored. Other theoretical results obtained show that the superconducting circular microstrip patch on anisotropic substrate-superstrate with properly selected permittivity values along the optical and the non-optical axes combined with optimally chosen structural parameters is more advantageous than the one on isotropic substrate-superstrate by exhibiting wider bandwidth characteristic.

In this paper, an efficient full-wave analysis of a circular microstrip patch printed on suspended and composite substrates is performed using a dyadic Green’s function formulation. Galerkin’s technique is used in the resolution of the integral equation of the electric field. The TM set of modes issued, from the magnetic wall cavity model, are used to expand the unknown currents on the circular patch. The radiation patterns are expressed regarding the transforms of the currents. The convergence of the method is proven by calculating the resonant frequencies, half-power bandwidths, and quality factors for several configurations. The computed results are found to be in excellent agreement with those observed in the literature. The numerical results obtained show that the bandwidth increases with the increase in the thickness of the suspended or composite substrates, especially for low permittivity of the second layer. Also, it is demonstrated that the resonant frequencies of the circular microstrip patch on suspended and composite substrates can be adjusted to obtain the maximum operating frequency of the antenna. Finally, the effect of the presence of the second layer under the circular patch on the radiation patterns is also investigated.

In this paper, a new particle swarm optimization‐based approach is proposed for the geometrical optimization of the nanowires solar cells to achieve improved optical performance. The proposed hybrid approach combines the 3‐D numerical analysis using accurate solutions of Maxwell's equations and metaheuristic investigation to boost the solar cell total absorbance efficiency. Our purpose resides on modulating the electric field and increasing the light trapping capability by optimizing the radial solar cell geometrical parameters. Moreover, a comprehensive study of vertical core‐shell nanowire arrays optical parameters such as the integral absorption, reflection, and total absorbance efficiency is carried out, in order to reveal the optimized radial solar cells optical performance for low‐cost photovoltaic applications. We find that the proposed hybrid approach plays a crucial role in improving the nanowires solar cells optical performance, where the optimized design exhibits superior total absorbance efficiency and lower total reflection in comparison with those provided by the conventional planar design. The obtained results make the proposed global optimization approach valuable for providing high‐efficiency nanowires solar cells.

The performances of two full differential operational amplifiers (Op-Amps) telescopic and folded-cascode are evaluated to satisfy the stringent requirements on the amplifier to be used in a Multiplying Digital-to-Analog Converter (MDAC) stage of a pipelined ADC (Analog-to-Digital Converter). The paper shows the solutions found to reach high gain, wide bandwidth and short settling time without degrading too much the output swing. The Op-Amp specifications are extracted according to the ADC requirements, then the two Op-Amp topologies are designed, tested and their performances are compared. Simulation results show that the Op-Amp folded-cascode topology is more suitable architecture for pipelined ADC than the telescopic one. Moreover, the use of this type of Op-Amp generates an Integral Non-Linearity (INL) error less than that of the telescopic one. The analyses and simulation results are obtained using 0.18 µm AMS (Austria Mikro System) CMOS process parameters with a power supply voltage of 1.8V. The predicted performance is verified by analysis and simulations using Cadence EDA simulator.

An efficient small size electromagnetic energy harvesting sensor for low-DC-power applications is proposed. The sensor consists of two main parts: a dual polarisation square patch antenna used to collect the RF energy at a central frequency of 2.45 GHz, and two voltage doublers rectifier circuit for the RF-to-DC conversion. The overall size of the design is 50 × 50 × 6.2 mm ³ . Firstly, the antenna is designed using high-frequency structure simulator software; followed by the design of the rectifier circuit in advanced design system. After simulations, a sensor prototype is fabricated using F4B as the antenna substrate. Measurements show that the sensor achieves a comparatively high maximum measured efficiency of 41% for a power level of -10 dBm. The sensor has a simple structure, it is compact sized, light weight, and presents a high RF-to-DC conversion efficiency for low-RF-power levels which can be used to charge different low-DC-power devices.

In recent years, the design and fabrication ofmulti-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have attracted more efforts due to their high appropriateness for advanced integration circuits' applications. In fact, the boost of MOSFET structures is a battle against parasitic phenomena appearing at the nanoscale level. Short channel and quantum confinement effects are among the critical drawbacks that need to be remedied carefully. On the other hand, the hot carrier degradation effect is mainly a reliability concern affecting the device per- formance after long duration of work. In response to the high computational costs related to the development of physi- cal based models for Double Gate (DG) MOSFETs including all these effects, more flexible alternatives have been proposed for the prediction of device performances. Our aim in this chapter is to investigate the efficiency of a new proposed frame- work, built upon Kriging metamodeling and Non-dominated Sorting Genetic Algorithm version II (NSGA II), for the optimal design in terms of OFF-current, threshold voltage and swing factor. The input variables of interest are limited to the geometrical parameters namely the channel length and thickness. Data generated according to computer experiments, based on ATLAS 2-D simulator, are used to identify and adjust Kriging surrogate models. It is emphasized that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. Therefore, a wide range of selection possibilities is avail- able to the designer depending on situations under consideration.

Dans ce travail, nous proposons une nouvelle méthode pour la détection des micro-ondes acoustiques de volume dans un substrat piézoélectrique (Niobate de Lithium LiNbO3). Nous avons utilisé la classification par réseaux probabilistes de neurones comme un moyen d'analyse numérique afin de classer toutes les valeurs de la partie réelle et la partie imaginaire du coefficient d'atténuation pour les différentes vitesses acoustiques en construisant ainsi un modèle de détection efficace des ondes de volume. Cette étude sera très intéressante dans la modélisation et la réalisation des dispositifs micro-ondes acoustiques tels que les dispositifs à ultrasons basé sur la propagation des micro-ondes acoustiques de volume. En plus, nous pouvons appliquer cette technique sur n’importe qu’elle structure piézoélectrique possédant la même classe cristallographique, il suffit juste de changer les paramètres caractéristiques du matériau considéré.