Abstract:

To boosting the performance of inverted p-i-n-type planar hetero-junction architecture photovoltaic cells based on CH₃NH₃PbI₃ perovskite materials, a thin buffer layer Bathocuproine (BCP) is introduced between the Electron Transporting Layer (ETL) PCBM and the metal contact. The trends in parameters Perovskite Solar Cells (PSCs) inserting BCP is studied using solar cell capacitance simulator (SCAPS-1D). The obtained results of optimizing the thickness of the Bathocuproine (BCP) buffer layer exhibited optimum value at 5 nm, with power conversion efficiency (PCE) of 17.30 %, V_OC of 1.39 V, and FF of 62.89 %. The carrier concentration was higher than 10¹⁷ cm^-3 increases sharply the conversion efficiency by about 0.35-2.3 %. Further, the lower metal work function (Ф_m<4.3 eV) enhances the electrical parameters where the efficiency up to 21.3 %.

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