<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Touafek, Naima</style></author><author><style face="normal" font="default" size="100%">Dridi, Chahrazed</style></author><author><style face="normal" font="default" size="100%">R amdane Mahamdi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Bathocuproine Buffer Layer Effect on the Performance of Inverted Perovskite Solar Cells</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Technology Innovations in Renewable Energy</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.lifescienceglobal.com/pms/index.php/jtire/article/view/7107</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">20</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	To boosting the performance of inverted p-i-n-type planar hetero-junction architecture photovoltaic cells based on CH&lt;sub&gt;3&lt;/sub&gt;NH&lt;sub&gt;3&lt;/sub&gt;PbI&lt;sub&gt;3&lt;/sub&gt;&amp;nbsp;perovskite materials, a thin buffer layer Bathocuproine (BCP) is introduced between the Electron Transporting Layer (ETL) PCBM and the metal contact. The trends in parameters Perovskite Solar Cells (PSCs) inserting BCP is studied using solar cell capacitance simulator (SCAPS-1D). The obtained results of optimizing the thickness of the Bathocuproine (BCP) buffer layer exhibited optimum value at 5 nm, with power conversion efficiency (PCE) of 17.30 %,&amp;nbsp;&lt;em&gt;V&lt;sub&gt;OC&lt;/sub&gt;&amp;nbsp;&lt;/em&gt;of 1.39 V, and FF of 62.89 %. The carrier concentration was higher than 10&lt;sup&gt;17&lt;/sup&gt;&amp;nbsp;cm&lt;sup&gt;-3&lt;/sup&gt;&amp;nbsp;increases sharply the conversion efficiency by about 0.35-2.3 %. Further, the lower metal work function (Ф&lt;sub&gt;m&lt;/sub&gt;&amp;lt;4.3 eV) enhances the electrical parameters where the efficiency up to 21.3 %.
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