Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D

Citation:

Guenifi, Naima. 2017. “Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D”. International Conference on Phosphorus, Boron and Silicon 2017.

Publisher's Version

See also: Communications Internationales, Équipe 4 TSC, Catégorie C TSC

Last updated on 07/12/2022

Copyright © UB2 2018. All Rights Reserved.