<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benbouza Med Salah</style></author><author><style face="normal" font="default" size="100%">F. Z .Maalla</style></author><author><style face="normal" font="default" size="100%">I. Sellaoui</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence de la Longueur de Grille sur les Impédances d&amp;rsquo;entrée et de sortie du Transistor Mesfet GaAs, ISSN 1112-9697</style></title><secondary-title><style face="normal" font="default" size="100%">Revue des Sciences et de la Technologie</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2014</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://193.194.69.34/rst2/images/vol5n1/5-018-benbouza.pdf</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">5</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;span style=&quot;left:141.997px;top:303.035px;13.1983px;sans-serif;transform:scaleX(0.933841);&quot;&gt;In information science such as computer, telecommunications, processing of the transmission &lt;/span&gt;&lt;span style=&quot;left:85.1983px;top:318.234px;13.1983px;sans-serif;transform:scaleX(0.911071);&quot;&gt;of signals or images, the components field effect plays a role. Also we are interested in our study to field-&lt;/span&gt;&lt;span style=&quot;left:85.1983px;top:333.832px;13.1983px;sans-serif;transform:scaleX(0.938806);&quot;&gt;effect transistor gate Schottky micron and submicron in gallium arsenide GaAs MESFET said. &lt;/span&gt;&lt;span style=&quot;left:144.398px;top:349.03px;13.1983px;sans-serif;transform:scaleX(0.890293);&quot;&gt;In this paper, we present the results of calculating the influence of gate length on input &lt;/span&gt;&lt;span style=&quot;left:85.1983px;top:364.229px;13.1983px;sans-serif;transform:scaleX(0.951433);&quot;&gt;impedance and output transistor field effect Schottky barrier gallium arsenide GaAs MESFET said, this &lt;/span&gt;&lt;span style=&quot;left:85.1983px;top:379.827px;13.1983px;sans-serif;transform:scaleX(0.933975);&quot;&gt;physical model is based on the analysis of two-dimensional Poisson equation in the active region under &lt;/span&gt;&lt;span style=&quot;left:85.1983px;top:395.025px;13.1983px;sans-serif;transform:scaleX(0.884879);&quot;&gt;the gate. The theoretical simulation results based on analytical expressions that we have established &lt;/span&gt;&lt;span style=&quot;left:85.1983px;top:410.224px;13.1983px;sans-serif;transform:scaleX(0.898996);&quot;&gt;above, are discussed and compared with those of the experiment &lt;/span&gt;</style></abstract><issue><style face="normal" font="default" size="100%">1</style></issue></record></records></xml>