This work is a study of the elastic fields’ effect (stresses and displacements) caused by dislocations networks at a heterostructure interface of a InAs / GaAs semiconductors thin system in the cases of isotropic and anisotropic elasticity. The numerical study of this type of heterostructure aims to predict the behavior of the interface with respect to these elastic fields satisfying the boundary conditions. The method used is based on a development in Fourier series. The deformation near the dislocation is greater than the other locations far from the dislocation.     

In the present work, (Cu-Sn, Cu-Co) based alloys with different compositions have been obtained by using powder metallurgy (PM). These alloys were created with the purpose of increasing mechanical and structural properties of the industrial parts. The compacts are made according to the sintering manufacturing method, the uniaxial compressed cold samples. Metallographic characterizations, hardness and density measurements were carried out in order to study the influence of the addition of tin and cobalt, the variation of the compaction pressure and the sintering temperature on the finishing product. It has been proved that the addition of tin and cobalt to a copper powder mixture increase the properties of the sintered parts.