<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Elasaad Chebaki</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Contribution to study and modeling of the nanoscale multi-gate transistor using neural and evolutionary techniques</style></title><secondary-title><style face="normal" font="default" size="100%">Electronique</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://eprints.univ-batna2.dz/1612/</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	La miniaturisation des dimensions du transistor était le facteur principal et le plus important menant aux améliorations des performances et du coût du circuit intégré contribuant au développement rapide de l'industrie des semi-conducteurs. Dans cette thèse, nous proposons tout d'abord une nouvelle structure MOSFET à double grille sans jonction (DGJL) basée à la fois sur la grille double matériaux et les extensions fortement dopées liées aux drain et source. Des modèles analytiques associés au courant de drain, aux paramètres de performance analogique et radiofréquence (RF) sont développés en incorporant l'impact d'une grille à deux matériaux et deux régions d'extension fortement dopées sur les performances analogique/RF du MOSFET DGJL. Les facteurs de mérite (FOM) du transistor, qui régissent le comportement analogique/RF, sont également analysées. Les résultats de notre étude concernant les performances analogique/RF pour la structure proposée sont discutés et comparés avec ceux d‟un MOSFET DGJL conventionnel de dimensions similaires, où le dispositif proposé présente une excellente capacité à améliorer ces performances, et fournit un courant de drain plus élevé. Les résultats délivrés sont validés par rapport aux données obtenues à partir du logiciel TCAD pour une large gamme de paramètres de conception. De plus, les modèles analytiques développés ont été adoptés comme une fonction objectif pour optimiser les performances analogique/RF du dispositif en utilisant les Algorithmes Génétiques (AGs). En comparaison avec les données numériques rapportées pour la structure MOSFET en mode d‟Inversion (IM), nos paramètres de performance optimisés pour le dispositif JL présentent une amélioration en comparaison avec le dispositif en mode d'inversion. Cette thèse s‟occupe également de l'immunité du dispositif DG MOSFET sans jonctions envers l'effet de dégradation initié par les porteurs chauds. En conséquence, nous avons démontré que le DG MOSFET sans jonctions peut être un choix fiable pour améliorer les performances relatives aux transistors MOSFET à l'échelle nanométrique pour les applications numériques.
&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Doctorat</style></work-type></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Abdelmalek Nidhal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Contribution to the modeling and optimization of nanoscale VSG MOSFETs : Application to the nanoscale circuits design</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Arioua Nasro</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et réalisation d&amp;rsquo;un variateur de vitesse pour un moteur à courant continu</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Akakba Youness</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et réalisation d&amp;rsquo;un onduleur polyphasé à commande numérique</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hadjira Ilyes amar</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et réalisation d&amp;rsquo;un onduleur polyphasé à commande analogique MLI-sinus trianglaire</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mohammed cherif Okba</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Réalisation du circuit de commande d&amp;rsquo;un convertisseur statique à thyristor</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benchaira, Mohamed-Seghir-Massinissa</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et simulation d&amp;#39;une cellule solaire en couches minces à base de CIGS sous COMSOL</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mahmoudi Abderrahmane</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Elaboration and characterization byb ellipsometry of thin layers of silicon dioxide</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Haddad Abdessamed</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Simulation, réalisation et caractérisation d&amp;#39;une structure Schottky</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mallem Ali</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Commande robuste appliquée à la navigation d&amp;#39;un robot mobile</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hanachi Achref</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et réalisation d&amp;#39;un ralentisseur electronique</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benhizia Amel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et réalisation d&amp;#39;un convertisseur à bande</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Demagh, Fares Badreddine</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Ralisation d&amp;#39;un système de suivi sans fil en temps réel de la température d&amp;#39;un patient</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bouraiou Abdelouahab</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude d&amp;rsquo;une antenne microruban excitée par une ligne imprimée</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Chouti Leila</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Caractérisation d&amp;#39;une antenne microbande couplée par une ouverture de forme rectangulaire. Application à la réalisation d&amp;#39;une antenne multi bande</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bedra , Randa</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude d&amp;rsquo;une antenne supraconductrice couverte par une couche diélectrique</style></title><secondary-title><style face="normal" font="default" size="100%">Electronique</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://eprints.univ-batna2.dz/1625/</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	L’objectif de cette thèse est l’analyse des antennes microrubans fabriquées à base de patchs parfaitement conducteurs et supraconducteurs avec et sans couche protectrice utilisant deux méthodes différentes : le modèle de la cavité basé sur les connaissances électromagnétiques et l’approche spectrale conjointement avec les conditions aux limites de la résistivité complexe. La première méthode est choisie puisque, contrairement aux méthodes rigoureuses, elle fournit une compréhension qualitative en plus de requérir des développements mathématiques relativement courts. La deuxième méthode est réservée à l’étude des caractéristiques de résonance d’un patch microbande circulaire supraconducteur à haute température critique avec une couche protectrice. Des résultats numériques sont présentés pour le mode fondamental aussi bien que pour les modes d’ordre supérieur. Une étude paramétrique est menée pour quantifier l’influence de certains paramètres électriques et physiques sur les performances de l’antenne en tenant compte de l’anisotropie uniaxiale dans le diélectrique. Les résultats numériques de chaque structure sont comparés aux données théoriques et expérimentales reportées dans la littérature ouverte.
&lt;/p&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">BentrciaYoussouf</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Analysis by the full wave approach of patch resonators embedded in multilayered medium containing isotropic dielectrics, anisotropic substances and chiral materials</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">A.Aziz Bentouati</style></author><author><style face="normal" font="default" size="100%">Houssam Eddine Zaoui</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude de la propagation dans un canal physique pour GSM et UMTS</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">CHIBA FARID</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modélisation de la propagation des micro-ondes acoustiques dans les matériaux piézoélectriques</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">HAFDAOUI Amira</style></author><author><style face="normal" font="default" size="100%">CHEHAOUI Nora</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et Conception des antennes planaires pour les applications ULB</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">El Mehdi Belkacem, RIADH</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Contribution à l&amp;rsquo;étude et à la conception des commandes des onduleur</style></title><secondary-title><style face="normal" font="default" size="100%">Electronique</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://eprints.univ-batna2.dz/1656/</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	Les onduleurs sont des convertisseurs DC-AC de plus en plus utilisés dans les systèmes énergétiques, en particulier dans les énergies renouvelables. Pour cela, les onduleurs doivent utiliser l'énergie disponible de manière efficace. Ils doivent donc avoir une efficacité et une fiabilité élevées. De plus, les performances de ces systèmes sont mesurées par leur efficacité, forme d'onde et distorsion harmonique de la sortie, et enfin leur coût, qui dépendent du choix optimal des composants et de la stratégie de contrôle. Dans cette thèse, nous étudierons certaines structures et stratégies de contrôle, en nous concentrant davantage sur la réduction de la distorsion harmonique totale (THD). La réduction du THD dans les inverseurs multiniveaux nécessite la résolution d'équations transcendantales non linéaires complexes. Sans avoir à résoudre ces équations, nous avons proposé d'utiliser le récent algorithme firefly (FFA) pour optimiser le THD, en trouvant les meilleurs angles de commutation et en garantissant la minimisation des harmoniques dans une bande passante prédéfinie par l'utilisateur. Le FFA a été comparé à certains algorithmes largement utilisés existants tels que l'algorithme génétique (GA), et a montré une convergence plus rapide. Nous avons également choisi d'utiliser l'une des meilleures structures matérielles optimisées existantes, où nous avons validé les résultats de la simulation par des tests pratiques. Nous insistons sur le fait que la meilleure conception seule ou la meilleure stratégie de contrôle seule ne peut pas résoudre le problème THD à un coût raisonnable. Il est impératif d'aborder les deux sujets en même temps. La THD obtenu grâce à la simulation de l'onduleur symétrique de treize niveaux a été réduite à 5% (FFT de 60 harmoniques). Afin de valider les résultats de la simulation, un prototype d'onduleur symétrique de treize niveaux a été réalisé et pratiquement expérimenté et testé avec différentes charges. Par conséquent, la THD mesurée avec une charge résistive était de 4,7% sur une bande passante de 3 kHz.
&lt;/p&gt;
</style></abstract><work-type><style face="normal" font="default" size="100%">Doctorat</style></work-type></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lakehal Brahim</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et modélisation des photopiles de troisième génération </style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">KHALDI Samia</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Conception d&amp;rsquo;un Nez Electronique</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Tamma Ahmed Yassine</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Conception d&amp;#39;un MDAC pour CAN pipeline 8 bits</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad Adel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Structural and magnetic study of the influence of the thickness on multilayer (Ni/NiO) deposits at room temperature</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on Communications and Electrical Engineering (ICCEE)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/8634552</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications</style></title><secondary-title><style face="normal" font="default" size="100%">ICSENT </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1145/3330089.3330470</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Device and Circuit Level Performance Analysis of a NewNanoscale DGJL MOSFET Design Using an AccurateNumerical Computation</style></title><secondary-title><style face="normal" font="default" size="100%">ICSENT </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1145/3330089.3330471</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Simulation and analysis of Graphene-based nanoelectronic circuits using ANN method</style></title><secondary-title><style face="normal" font="default" size="100%">NN17</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1016/j.matpr.2018.05.039</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">ANFIS-based Approach to Predict the Degradation-related Ageing ofJunctionless GAA MOSFET</style></title><secondary-title><style face="normal" font="default" size="100%">NN17</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://doi.org/10.1016/j.matpr.2018.05.038</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Y. Aoun</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved Sliding Mode Controller Using Backstepping and Fuzzy Logic for a Quadrotor Aircraft</style></title><secondary-title><style face="normal" font="default" size="100%">International Symposium on Mechatronics and Renewable Energies (ISMRE’2018)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Belkacem Samia</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Artifact removal from electrocardiogram signal: A comparative study S</style></title><secondary-title><style face="normal" font="default" size="100%">2018 International Conference on Signal, Image, Vision and their Applications, SIVA 2018 </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/8661013/</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">KhalilTamersit</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis, ISSN 168-9002</style></title><secondary-title><style face="normal" font="default" size="100%">Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0168900218307046</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 901</style></volume><pages><style face="normal" font="default" size="100%">pp 32-39</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new radiation sensitive&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/field-effect-transistors&quot; title=&quot;Learn more about Field Effect Transistors from ScienceDirect's AI-generated Topic Pages&quot;&gt;field-effect Transistor&lt;/a&gt;&amp;nbsp;(RADFET)&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/dosimeters&quot; title=&quot;Learn more about Dosimeters from ScienceDirect's AI-generated Topic Pages&quot;&gt;dosimeter&lt;/a&gt;&amp;nbsp;design based on armchair-edge graphene nanoribbon (AGNR), for high performance low-dose monitoring applications, is proposed through a&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/quantum-simulation&quot; title=&quot;Learn more about Quantum Simulation from ScienceDirect's AI-generated Topic Pages&quot;&gt;quantum simulation&lt;/a&gt;&amp;nbsp;study. The simulation approach used to investigate the proposed&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/nanoscale&quot; title=&quot;Learn more about Nanoscale from ScienceDirect's AI-generated Topic Pages&quot;&gt;nanoscale&lt;/a&gt;&amp;nbsp;RADFET is based on solving the Schrödinger equation using the mode space (MS) non-equilibrium Green’s function (NEGF) formalism coupled self-consistently with a two dimensional (2D)&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/poisson-equation&quot; title=&quot;Learn more about Poisson Equation from ScienceDirect's AI-generated Topic Pages&quot;&gt;Poisson equation&lt;/a&gt;&amp;nbsp;under the ballistic limits. The responsiveness of the proposed RADFET to the modulation of radiation-induced trapped charge densities is reflected via the&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/threshold-voltage&quot; title=&quot;Learn more about Threshold Voltage from ScienceDirect's AI-generated Topic Pages&quot;&gt;threshold voltage&lt;/a&gt;, which is considered as a sensing parameter. The dosimeter behavior is investigated, and the impact of variation in physical and geometrical parameters on the dosimeter sensitivity is also studied. In comparison to other RADFETs designs, the proposed radiation sensor provides higher sensitivity and better scalability, which are the main requirements for futuristic dosimeters. The obtained results make the suggested RADFET dosimeter as a viable and attractive replacement to silicon-based MOS dosimeters.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Naima Guenifi</style></author><author><style face="normal" font="default" size="100%">Bauza, Daniel</style></author><author><style face="normal" font="default" size="100%">R amdane Mahamdi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Characterizing Slow state Near Si-SiO2 in MOS structure</style></title><secondary-title><style face="normal" font="default" size="100%">Phosphorus Sulfur and Silicon and the Related Elements</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/321845704_Characterizing_Slow_state_Near_Si-SiO_2_in_MOS_structure</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">193</style></volume><pages><style face="normal" font="default" size="100%">88-91</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Naima Guenifi</style></author><author><style face="normal" font="default" size="100%">R amdane Mahamdi</style></author><author><style face="normal" font="default" size="100%">Ibrahim Rahmani</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D</style></title><secondary-title><style face="normal" font="default" size="100%">Phosphorus, Sulfur, and Silicon and the Related Elements </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/321813643_Boron_Phosphorus_and_Arsenic_Diffusion_in_MOS_transistors_Simulation_and_Analyze_in_Both_2D_and_3D</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">193</style></volume><pages><style face="normal" font="default" size="100%">92-97</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	The article introduces the benefits and application features of Silvaco Technology Computer Aided Design‘TCAD’ tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed
&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Naima Guenifi</style></author><author><style face="normal" font="default" size="100%">R amdane Mahamdi</style></author><author><style face="normal" font="default" size="100%">Ibrahim Rahmani</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab</style></title><secondary-title><style face="normal" font="default" size="100%"> Phosphorus, Sulfur, and Silicon and the Related Elements </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/321843791_An_algorithm_for_boron_diffusion_in_MOS_transistors_using_Silvaco_Athena_and_MATLAB</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">193</style></volume><pages><style face="normal" font="default" size="100%">98-103</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick's equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.
&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%"> Role of non-uniform Ge concentration profile in enhancing the efficiency of thin-film SiGe/Si Solar Cells, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402617317187</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 158</style></volume><pages><style face="normal" font="default" size="100%">pp 192-198</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;div id=&quot;abst0005&quot;&gt;
	&lt;p id=&quot;spar0035&quot;&gt;
		&lt;span&gt;&lt;span&gt;In this paper, graded Ge &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/mole-fraction&quot; title=&quot;Learn more about Mole Fraction from ScienceDirect's AI-generated Topic Pages&quot;&gt;mole fraction&lt;/a&gt;&lt;span&gt;&lt;span&gt; aspect is proposed as a new way to achieve the dual benefit of improved Si/SiGe-based solar cell photoconversion efficiency and suppressed degradation related-dislocation effects. Our purpose resides mainly on decreasing the &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/defect-density&quot; title=&quot;Learn more about Defect Density from ScienceDirect's AI-generated Topic Pages&quot;&gt;defect density&lt;/a&gt; at the Si/SiGe interface through shifting the &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/ge-concentration&quot; title=&quot;Learn more about Ge Concentration from ScienceDirect's AI-generated Topic Pages&quot;&gt;Ge concentration&lt;/a&gt;&lt;span&gt; gradually with the SiGe &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/absorber-layer&quot; title=&quot;Learn more about Absorber Layer from ScienceDirect's AI-generated Topic Pages&quot;&gt;absorber layer&lt;/a&gt; thickness. Further, a careful mechanism analysis based on investigating numerically the impact of the proposed graded Ge content paradigm on reducing the degradation related-dislocation effect is performed. The advantage of using a SiGe layer with graded Ge concentration instead of a thin-film SiGe alloys is presented. Moreover, the impact of the proposed SiGe layer thickness on the solar cell conversion efficiency is carried out. It is found that the proposed feature brings the opportunity of reducing the &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/lattice-mismatch&quot; title=&quot;Learn more about Lattice Mismatch from ScienceDirect's AI-generated Topic Pages&quot;&gt;lattice mismatch&lt;/a&gt; at the Si/SiGe interface, which can in turn improve the Si/SiGe-based solar cell conversion efficiency. In addition, increasing the Ge content progressively suggests the band-gap modulation aspect that enables improving the solar cell &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/electromagnetic-absorption&quot; title=&quot;Learn more about Electromagnetic Absorption from ScienceDirect's AI-generated Topic Pages&quot;&gt;optical absorption&lt;/a&gt;&lt;span&gt; and the total resistance. Therefore, the proposed design pinpoints a new path toward avoiding &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/recombination-loss&quot; title=&quot;Learn more about Recombination Loss from ScienceDirect's AI-generated Topic Pages&quot;&gt;recombination losses&lt;/a&gt; through suppressing the degradation related-dislocation effects, which makes it potential alternative for providing high-efficiency Si-based solar cells.&lt;/span&gt;
	&lt;/p&gt;
&lt;/div&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author><author><style face="normal" font="default" size="100%">Kalinka Kacha</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Optimizing the optical performance of ZnO/Si-based solar cell using metallic nanoparticles and interface texturization, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik - International Journal for Light and Electron Optics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S003040261731197X</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 153</style></volume><pages><style face="normal" font="default" size="100%">pp 43-49</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;div id=&quot;abst0005&quot;&gt;
	&lt;p id=&quot;spar0030&quot;&gt;
		&lt;span&gt;&lt;span&gt;&lt;span&gt;In this paper, we propose a new n-ZnO/p-Si hetero-junction solar cell design based on both interface engineering and &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/metallic-nanoparticles&quot; title=&quot;Learn more about Metallic Nanoparticles from ScienceDirect's AI-generated Topic Pages&quot;&gt;metallic nanoparticles&lt;/a&gt;&lt;span&gt; aspects. The merits of using both metallic nanoparticles and grooves morphology in the ZnO/p-Si interface to improve solar cell optical performance are investigated numerically using accurate solutions of Maxwell’s equations. It is found that the proposed structure suggests the possibility to achieve the dual role of improved light-scattering in the Si &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/absorber-layer&quot; title=&quot;Learn more about Absorber Layer from ScienceDirect's AI-generated Topic Pages&quot;&gt;absorber layer&lt;/a&gt; as well as enhancing the absorption in the ZnO thin-film through the &lt;/span&gt;&lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/surface-plasmon&quot; title=&quot;Learn more about Surface Plasmon from ScienceDirect's AI-generated Topic Pages&quot;&gt;Surface Plasmon&lt;/a&gt; Resonance effect. Besides, the proposed design exhibits superior optical performance and offers improved total absorbance efficiency (TAE) as compared to the conventional counterpart. Moreover, &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/particle-swarm-optimization&quot; title=&quot;Learn more about Particle Swarm Optimization from ScienceDirect's AI-generated Topic Pages&quot;&gt;particle swarm optimization&lt;/a&gt; (&lt;/span&gt;&lt;em&gt;PSO&lt;/em&gt;&lt;span&gt;&lt;span&gt;)-based approach is exploited for the &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/geometrical-optimization&quot; title=&quot;Learn more about Geometrical Optimization from ScienceDirect's AI-generated Topic Pages&quot;&gt;geometrical optimization&lt;/a&gt;&lt;span&gt; of the proposed design to achieve higher light trapping capability. It is found that the &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/optimised-design&quot; title=&quot;Learn more about Optimised Design from ScienceDirect's AI-generated Topic Pages&quot;&gt;optimized design&lt;/a&gt; yields 50% of relative improvement in the ZnO/p-Si-based solar cell TAE which confirms excellent capability of the proposed design approach for modulating the electric field behavior inside the solar cell structure. The obtained results indicate that the optimized n-ZnO/p-Si hetero-junction solar cell offer the potential for high conversion efficiency at low costs which make it valuable for &lt;/span&gt;&lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/photovoltaics&quot; title=&quot;Learn more about Photovoltaics from ScienceDirect's AI-generated Topic Pages&quot;&gt;photovoltaic&lt;/a&gt; application.&lt;/span&gt;
	&lt;/p&gt;
&lt;/div&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Graded band-gap engineering for increased efficiency in CZTS solar cells, ISSN / e-ISSN 0925-3467 / 1873-1252</style></title><secondary-title><style face="normal" font="default" size="100%">Optical Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0925346718300077</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 76</style></volume><pages><style face="normal" font="default" size="100%">pp 393-399</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, we propose a potential high efficiency &lt;em&gt;Cu&lt;/em&gt;&lt;sub&gt;&lt;em&gt;2&lt;/em&gt;&lt;/sub&gt;&lt;em&gt;ZnSn(S,Se)&lt;/em&gt;&lt;sub&gt;&lt;em&gt;4&lt;/em&gt;&lt;/sub&gt;/&lt;em&gt;CdS&lt;/em&gt; (&lt;em&gt;CZTS&lt;/em&gt;) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (&lt;em&gt;PSO&lt;/em&gt;) is proposed to determinate the optimal band-gap profile of the amended &lt;em&gt;CZTS&lt;/em&gt; absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of &lt;em&gt;16.9%&lt;/em&gt; is recorded for the optimized solar cell with a relative improvement of &lt;em&gt;92%&lt;/em&gt;, compared with the reference cell efficiency of 8.8%. Likewise, the optimized &lt;em&gt;CZTS&lt;/em&gt;&lt;span&gt; solar cell with a graded band-gap enables achieving a higher &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/open-circuit-voltage&quot; title=&quot;Learn more about Open Circuit Voltage from ScienceDirect's AI-generated Topic Pages&quot;&gt;open circuit voltage&lt;/a&gt; of &lt;/span&gt;&lt;em&gt;889&amp;nbsp;mV&lt;/em&gt;&lt;span&gt;, a &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/short-circuits&quot; title=&quot;Learn more about Short Circuits from ScienceDirect's AI-generated Topic Pages&quot;&gt;short-circuit&lt;/a&gt; current of &lt;/span&gt;&lt;em&gt;28.5&amp;nbsp;mA&lt;/em&gt; and a fill factor of &lt;em&gt;66%&lt;/em&gt;. Therefore, the optimized &lt;em&gt;CZTS&lt;/em&gt;&lt;span&gt;-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency &lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/thin-films&quot; title=&quot;Learn more about Thin Films from ScienceDirect's AI-generated Topic Pages&quot;&gt;thin-film&lt;/a&gt; solar cells through enhancing carrier collection and reducing the recombination rate.&lt;/span&gt;</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-017-1052-1</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 17</style></volume><pages><style face="normal" font="default" size="100%">pp 129-137</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a graded channel doping paradigm is proposed to improve the nanoscale double gate junctionless &lt;em class=&quot;EmphasisTypeItalic &quot;&gt;DGJL&lt;/em&gt; &lt;em class=&quot;EmphasisTypeItalic &quot;&gt;MOSFET&lt;/em&gt; electrical performance. A careful mechanism study based on numerical investigation and a performance comparison between the proposed and conventional design is carried out. The device figures-of-merit, governing the switching and leakage current behavior are investigated in order to reveal the transistor electrical performance for ultra-low power consumption. It is found that the channel doping engineering feature has a profound implication in enhancing the device electrical performance. Moreover, the impact of the high-k gate dielectric on the device leakage performance is also analyzed. The results show that the proposed design with gate stacking demonstrates superior &lt;span class=&quot;InlineEquation&quot; id=&quot;IEq1&quot;&gt;&lt;span class=&quot;MathJax&quot; data-mathml=&quot;&lt;math xmlns=&amp;quot;http://www.w3.org/1998/Math/MathML&amp;quot;&gt;&lt;msub&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mtext class=&amp;quot;MJX-tex-mathit&amp;quot; mathvariant=&amp;quot;italic&amp;quot;&gt;ON&lt;/mtext&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mo&gt;/&lt;/mo&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mtext class=&amp;quot;MJX-tex-mathit&amp;quot; mathvariant=&amp;quot;italic&amp;quot;&gt;OFF&lt;/mtext&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&quot; id=&quot;MathJax-Element-1-Frame&quot; role=&quot;presentation&quot; style=&quot;position:relative;&quot; tabindex=&quot;0&quot;&gt;&lt;nobr aria-hidden=&quot;true&quot;&gt;&lt;span class=&quot;math&quot; id=&quot;MathJax-Span-1&quot; style=&quot;width:4.56em;display:inline-block;&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:4.081em;height:0px;111%;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(1.264em,1004.08em,2.582em,-1000em);top:-2.173em;left:0em;&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-2&quot;&gt;&lt;span class=&quot;msubsup&quot; id=&quot;MathJax-Span-3&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:1.583em;height:0px;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(3.133em,1000.5em,4.134em,-1000em);top:-3.975em;left:0em;&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-4&quot; style=&quot;MathJax_Math;font-style:italic;&quot;&gt;I&lt;/span&gt;&lt;/span&gt;&lt;span style=&quot;position:absolute;top:-3.821em;left:0.44em;&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-5&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-6&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-7&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-8&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-9&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-10&quot;&gt;&lt;span class=&quot;mtext&quot; id=&quot;MathJax-Span-11&quot; style=&quot;70.7%;MathJax_Main;font-style:italic;&quot;&gt;ON&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-12&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-13&quot;&gt;&lt;span class=&quot;mo&quot; id=&quot;MathJax-Span-14&quot; style=&quot;MathJax_Main;&quot;&gt;/&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;span class=&quot;msubsup&quot; id=&quot;MathJax-Span-15&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:1.981em;height:0px;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(3.133em,1000.5em,4.134em,-1000em);top:-3.975em;left:0em;&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-16&quot; style=&quot;MathJax_Math;font-style:italic;&quot;&gt;I&lt;/span&gt;&lt;/span&gt;&lt;span style=&quot;position:absolute;top:-3.821em;left:0.44em;&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-17&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-18&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-19&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-20&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-21&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-22&quot;&gt;&lt;span class=&quot;mtext&quot; id=&quot;MathJax-Span-23&quot; style=&quot;70.7%;MathJax_Main;font-style:italic;&quot;&gt;OFF&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/nobr&gt;&lt;/span&gt;&lt;/span&gt; ratio and lower leakage current as compared to the conventional counterpart. Our analysis highlights the good ability of the proposed design including a high-k gate dielectric for the reduction of the leakage current. These characteristics underline the distinctive electrical behavior of the proposed design and also suggest the possibility for bridging the gap between the high derived current capability and low leakage power. This makes the proposed &lt;em class=&quot;EmphasisTypeItalic &quot;&gt;GCD-DGJL MOSFET&lt;/em&gt; with gate stacking a potential alternative for high performance and ultra-low power consumption applications.</style></abstract><issue><style face="normal" font="default" size="100%">Issue 1</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of intermediate metallic sub-layers in improving the efficiency of kesterite solar cells: concept and optimization, ISSN / e-ISSN 2053-1591 / 2053-1591</style></title><secondary-title><style face="normal" font="default" size="100%"> Materials Research Express</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://iopscience.iop.org/article/10.1088/2053-1591/aab7ae/meta</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 5</style></volume><pages><style face="normal" font="default" size="100%">pp 036417</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this work, versatile &lt;i&gt;CdS&lt;/i&gt;/&lt;i&gt;Cu&lt;/i&gt; &lt;sub&gt; &lt;i&gt;2&lt;/i&gt; &lt;/sub&gt; &lt;i&gt;ZnSnS&lt;/i&gt; &lt;sub&gt; &lt;i&gt;4&lt;/i&gt; &lt;/sub&gt;(&lt;i&gt;CZTS&lt;/i&gt;) solar cell designs based on intermediate metallic sub-layers (&lt;i&gt;Au&lt;/i&gt;, &lt;i&gt;Ti&lt;/i&gt;, and &lt;i&gt;Ag&lt;/i&gt;) engineering are proposed for enhancing light-scattering behavior and reducing recombination losses. The idea behind this work is to generate optical confinement regions in the &lt;i&gt;CZTS&lt;/i&gt; absorber layer to achieve an improved absorption and appropriate antireflection effects. Moreover, the ultra-thin metal at the &lt;i&gt;CZTS&lt;/i&gt;/&lt;i&gt;Mo&lt;/i&gt; interface can be helpful for reducing the series resistance, where it behaves like a blocking layer for the Sulfur diffusion. We further combine the proposed designs with Particle Swarm Optimization (&lt;i&gt;PSO&lt;/i&gt;)-based approach to achieve broadband absorption and boost the conversion efficiency. It is found that the optimized design with &lt;i&gt;Ti&lt;/i&gt; sub-layer improves the &lt;i&gt;CZTS&lt;/i&gt; solar cell properties, where it yields 31&lt;i&gt;%&lt;/i&gt; improvement in short-circuit current and 60&lt;i&gt;%&lt;/i&gt; in the power efficiency over the conventional one. Therefore, the optimized designs provide the opportunity for bridging the gap between improving the optical behavior and reducing the recombination losses.</style></abstract><issue><style face="normal" font="default" size="100%">N° 3</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of Graded Channel Doping Engineering in Improving Junctionless GAA MOSFET Performance for Ultra Low-Leakage Power Applications, ISSN / e-ISSN 1555-130X / 1555-1318</style></title><secondary-title><style face="normal" font="default" size="100%"> Journal of Nanoelectronics and Optoelectronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000004/art00011</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 13</style></volume><pages><style face="normal" font="default" size="100%">pp 521-530</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, channel doping engineering aspect is proposed as a new way to improve the junctionless Gate All Around (&lt;i&gt;GAA&lt;/i&gt;)&lt;i&gt; MOSFET&lt;/i&gt; performance for digital and analog applications. The amended channel doping consists of a lateral graded profile, where the channel is divided into two regions with different doping levels. Analytical approaches for the drain current, leakage power, digital and small signal parameters are developed incorporating the impact of graded channel doping (&lt;i&gt;GCD&lt;/i&gt;) paradigm on the device electrical behavior. Exhaustive study based on a performance comparison between the proposed structure and the conventional one is carried out, where the proposed design exhibits a good capability in improving the overall device figures-of-merit (&lt;i&gt;FoMs&lt;/i&gt;), governing the leakage and the analog performance. More importantly, Particle Swarm Optimization (&lt;i&gt;PSO&lt;/i&gt;) approach is proposed as a metaheuristic technique to boost the device performance through carefully adjusting the design parameters of the proposed&lt;i&gt; GCD&lt;/i&gt; feature. It is found that the optimized design outperforms considerably the conventional counterpart and enable making wise trade-offs, where an enhancement of 300% in the&lt;i&gt; I&lt;/i&gt; &lt;sub&gt;ON&lt;/sub&gt; &lt;i&gt;/I&lt;/i&gt; &lt;sub&gt;OFF&lt;/sub&gt; ratio, 482% in the intrinsic gain, and 340% in the cut-off frequency has been reached. Besides, the proposed design provides a sufficient capability for suppression of the leakage effects. The obtained results underline the distinctive property of the proposed design for bridging the gap between high analog and digital performances with ultra-low power consumption. This makes the proposed design a potential alternative for ultra-low power and high electrical performance applications.</style></abstract><issue><style face="normal" font="default" size="100%">N° 4</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Boosting the optical performance and commutation speed of phototransistor using SiGe/Si/Ge tunneling structure, ISSN / e-ISSN 2053-1591 / 2053-1591</style></title><secondary-title><style face="normal" font="default" size="100%"> Materials Research Express</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://iopscience.iop.org/article/10.1088/2053-1591/aac756/meta</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 5</style></volume><pages><style face="normal" font="default" size="100%">pp 065902</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new optically controlled tunneling field effect transistor (&lt;i&gt;OC-TFET&lt;/i&gt;) based on &lt;i&gt;SiGe&lt;/i&gt;/&lt;i&gt;Si&lt;/i&gt;/&lt;i&gt;Ge&lt;/i&gt; hetero-channel is proposed to improve optical commutation speed and reduce power consumption. An exhaustive study of the device switching behavior associated with different hetero-channel structures has been carried out using an accurate numerical simulation. Moreover, a new figure of Merit (&lt;i&gt;FoM&lt;/i&gt;) parameter called optical swing factor that describes the phototransistor optical commutation speed is proposed. We demonstrate that the band-to-band tunneling effect can be beneficial for improving the device optical commutation speed. The impact of the &lt;i&gt;Ge&lt;/i&gt; mole fraction of the &lt;i&gt;SiGe&lt;/i&gt; source region on the device &lt;i&gt;FoMs&lt;/i&gt; is investigated. It is found that the optimized design with 40% of &lt;i&gt;Ge&lt;/i&gt; content offers the opportunity to overcome the trade-off between ultrafast and very sensitive photoreceiver performance, where it yields 48 mV/dec of optical swing factor and 155 dB of &lt;i&gt;I&lt;/i&gt; &lt;sub&gt; &lt;i&gt;ON&lt;/i&gt; &lt;/sub&gt;/&lt;i&gt;I&lt;/i&gt; &lt;sub&gt; &lt;i&gt;OFF&lt;/i&gt; &lt;/sub&gt; ratio. An overall performance comparison between the proposed &lt;i&gt;OC-TFET&lt;/i&gt; device and the conventional designs is performed, where the proposed structure ensures high optical detectivity for very low optical powers (&lt;i&gt;sub-&lt;/i&gt;1&lt;i&gt;pW&lt;/i&gt;) as compared to that of the conventional counterparts. Therefore, the proposed &lt;i&gt;OC-TFET&lt;/i&gt; provides the possibility for bridging the gap between improved optical commutation speed and reduced power consumption, which makes it a potential alternative for high-performance inter-chip data communication applications.</style></abstract><issue><style face="normal" font="default" size="100%"> N° 6</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Abdelmalek Nidhal</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author><author><style face="normal" font="default" size="100%">Bentrcia Toufik</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-018-1141-9</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Vloume. 17</style></volume><pages><style face="normal" font="default" size="100%">pp 724-735</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-&lt;span class=&quot;InlineEquation&quot; id=&quot;IEq1&quot;&gt;&lt;span class=&quot;MathJax&quot; data-mathml=&quot;&lt;math xmlns=&amp;quot;http://www.w3.org/1998/Math/MathML&amp;quot;&gt;&lt;mi&gt;&amp;amp;#x03BA;&lt;/mi&gt;&lt;/math&gt;&quot; id=&quot;MathJax-Element-1-Frame&quot; role=&quot;presentation&quot; style=&quot;position:relative;&quot; tabindex=&quot;0&quot;&gt;&lt;nobr aria-hidden=&quot;true&quot;&gt;&lt;span class=&quot;math&quot; id=&quot;MathJax-Span-1&quot; style=&quot;width:0.639em;display:inline-block;&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:0.583em;height:0px;111%;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(1.625em,1000.56em,2.396em,-1000em);top:-2.226em;left:0em;&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-2&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-3&quot; style=&quot;MathJax_Math;font-style:italic;&quot;&gt;κ&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/nobr&gt;&lt;/span&gt;&lt;/span&gt; layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.</style></abstract><issue><style face="normal" font="default" size="100%"> Issue 2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author><author><style face="normal" font="default" size="100%">Bentrcia Toufik</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability, ISSN / e-ISSN 2190-4286 / 2190-4286</style></title><secondary-title><style face="normal" font="default" size="100%">Beilstein Journals of Nanotechnology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.beilstein-journals.org/bjnano/articles/9/177</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 9</style></volume><pages><style face="normal" font="default" size="100%">pp 1856-1862</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;Ge&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;Ge&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt; material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolar conduction is investigated. Moreover, the impact of the Ge mole fraction in the proposed Si&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;Ge&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt; source region on the electrical figures of merit (&lt;i&gt;FoMs&lt;/i&gt;) of the transistor, including the swing factor and the &lt;i&gt;I&lt;/i&gt;&lt;sub&gt;ON&lt;/sub&gt;/&lt;i&gt;I&lt;/i&gt;&lt;sub&gt;OFF&lt;/sub&gt; ratio is analyzed. It is found that the optimized design with 60 atom % of Ge offers improved switching behavior and enhanced derived current capability at the nanoscale level, with a swing factor of 42 mV/dec and an &lt;i&gt;I&lt;/i&gt;&lt;sub&gt;ON&lt;/sub&gt;/&lt;i&gt;I&lt;/i&gt;&lt;sub&gt;OFF&lt;/sub&gt; ratio of 115 dB. Further, the scaling capability of the proposed Si&lt;sub&gt;1−&lt;/sub&gt;&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;Ge&lt;i&gt;&lt;sub&gt;x&lt;/sub&gt;&lt;/i&gt;/Si/Ge DG-HJ-JL TFET structure is investigated and compared to that of a conventional Ge-DG-JL TFET design, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects, Journal of Nanoelectronics and Optoelectronics, ISSN / e-ISSN 1555-130X / 1555-1318</style></title><secondary-title><style face="normal" font="default" size="100%"> Journal of Nanoelectronics and Optoelectronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000007/art00020</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 13</style></volume><pages><style face="normal" font="default" size="100%">pp 1106-1113</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this work, we present a comprehensive investigation of&lt;i&gt; JL-GAA MOSFET&lt;/i&gt; including degradation-related ageing effects to study the nanoscale&lt;i&gt; JL-GAA MOSFET&lt;/i&gt; reliability against the ageing phenomenon. A quantitative analysis of the device reliability behavior is carried out, in order to show the impact of the ageing effects on the device performance for digital applications. Moreover, the effect of the stress time on the device subthreshold behavior including the threshold voltage,&lt;i&gt; DIBL&lt;/i&gt; and swing factor is elucidated, where the degradation related-ageing effects is represented by a new current generator in the opposite direction that describes the exponential degradation of the current as function of the stress time. Further, the role of introducing a high-&lt;i&gt;k&lt;/i&gt; layer on the gate oxide in improving the&lt;i&gt; JL-GAA MOSFET&lt;/i&gt; immunity against the degradation-related ageing effects is analyzed, where the proposed structure exhibits an excellent immunity against the ageing effects. In order to show the impact of the proposed approach on the nanoelectronic circuits designing, the developed model has been implemented to study the performance behavior of voltage amplifier circuit including degradation-related ageing effects. Therefore, the proposed approach can offer new insights regarding the investigation and simulation of the nanoelectronic circuits including the degradation-related ageing effects.</style></abstract><issue><style face="normal" font="default" size="100%">N° 7 </style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">F.Menacer</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author><author><style face="normal" font="default" size="100%">A.Kadri</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube, ISSN / e-ISSN 0263-2241 / 1873-412X</style></title><secondary-title><style face="normal" font="default" size="100%">Measurement</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0263224118303452</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 125</style></volume><pages><style face="normal" font="default" size="100%">pp 232-242</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;span&gt;&lt;span&gt;&lt;span&gt;&lt;span&gt;This paper presents a new nanoforce sensor based on a suspended carbon &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/nanotubes&quot; title=&quot;Learn more about Nanotubes from ScienceDirect's AI-generated Topic Pages&quot;&gt;nanotube&lt;/a&gt; gate &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/field-effect-transistors&quot; title=&quot;Learn more about Field Effect Transistors from ScienceDirect's AI-generated Topic Pages&quot;&gt;field-effect transistor&lt;/a&gt;. To do so, a numerical investigation of Suspended Gate &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/silicon-on-insulator&quot; title=&quot;Learn more about Silicon on Insulator from ScienceDirect's AI-generated Topic Pages&quot;&gt;Silicon-on-Insulator&lt;/a&gt;&lt;span&gt; &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/field-effect-transistors&quot; title=&quot;Learn more about Field Effect Transistors from ScienceDirect's AI-generated Topic Pages&quot;&gt;MOSFET&lt;/a&gt; (SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube’s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the &lt;/span&gt;&lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/saturation-region&quot; title=&quot;Learn more about Saturation Region from ScienceDirect's AI-generated Topic Pages&quot;&gt;saturation region&lt;/a&gt;&lt;span&gt;&lt;span&gt;. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/artificial-neural-network&quot; title=&quot;Learn more about Artificial Neural Network from ScienceDirect's AI-generated Topic Pages&quot;&gt;artificial neural networks&lt;/a&gt; (ANNs). We successfully integrate our &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/neural-model&quot; title=&quot;Learn more about Neural Model from ScienceDirect's AI-generated Topic Pages&quot;&gt;neural model&lt;/a&gt;&lt;span&gt; of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/neural-networks&quot; title=&quot;Learn more about Neural Networks from ScienceDirect's AI-generated Topic Pages&quot;&gt;neural networks&lt;/a&gt;, which deals with correction and &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/linearization&quot; title=&quot;Learn more about Linearization from ScienceDirect's AI-generated Topic Pages&quot;&gt;linearization&lt;/a&gt; of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced optical and electrical performances of UV-phototransistor using graded band-gap ZnMgO photosensitive gate, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-018-1211-z</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 17</style></volume><pages><style face="normal" font="default" size="100%">pp 1181–1190</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this work, a new ultraviolet optically-controlled field-effect transistor (UV-OCFET) based on ZnMgO photosensitive gate with graded band-gap aspect is proposed and investigated using a comprehensive analytical modeling. The impact of different band-gap profiles on the phototransistor figure of merits (FoMs) is analyzed. Our study demonstrates that the use of ZnMgO with a graded band-gap profile can generate an electric field in the photosensitive layer, which leads to achieve the dual role of effective electron/hole pair separation and lower recombination losses. Moreover, increasing the Mg content progressively not only enables a strong UV-light absorption but also allows achieving a high optical sensitivity for very low optical powers (sub-1pW). The particle-swarm optimization approach is exploited to boost the phototransistor FoMs by optimizing the sensor design parameters and the ZnMgO band-gap profile. It is found that the optimized structure exhibits superior optical characteristics as compared to those of the conventional UV-photodetectors. Therefore, the optimized ZnMgO UV-OCFET with graded band-gap paradigm pinpoints a new path toward recording an ultrasensitive phototransistor compatible with CMOS modern technology. This makes it a potential alternative for high-performance and low-energy consumption chip-level UV-communication and monitoring applications.</style></abstract><issue><style face="normal" font="default" size="100%"> Issue 3</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Kalinka Kacha</style></author><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of ITO ultra-thin layer in improving electrical performance and thermal reliability of Au/ITO/Si/Au structure: An experimental investigation, ISSN 0749-6036</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/325553017_Role_of_ITO_ultra-thin_layer_in_improving_electrical_performance_and_thermal_reliability_of_AuITOSiAu_structure_An_experimental_investigation</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">120</style></volume><pages><style face="normal" font="default" size="100%">419-426 </style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, the role of introducing an intermediate Indium Tin Oxide (ITO) thin-film in improving the Au/Si Schottky Barrier Diodes (SBDs) electrical performance is experimentally analyzed. The Au/ITO/Si/Au structures with different ITO thicknesses were fabricated using RF magnetron sputtering technique. The current-voltage (I-V) characteristics of the investigated structures are analyzed, where the device electrical parameters are extracted. It is found that the introduced ITO thin-film has a significant impact in reducing the ideality factor (n=1.25), the interfacial defects (Nss=1.5×1012 eV−1cm−2) and the series resistance (Rs=32Ω). Our study demonstrates that the use of ITO intermediate thin-film can generate minority carrier injection effects, which lead to achieve the dual role of enhanced derived current and lower series resistance. Moreover, the structure thermal stability behavior is investigated and compared with those of the conventional design in order to reveal the device reliability against the thermal variation. Furthermore, the effect of the annealing on the device thermal stability is also analyzed. Our investigation shows that the annealed structure provides the possibility for avoiding the degradation related-heating effects. Therefore, the proposed Au/ITO/Si/Au structure offers the opportunity for bridging the gap between achieving superior electrical performance and enhanced thermal stability. The obtained results may facilitate the design of high-performance SBDs for sensing and microelectronic applications.
&lt;/p&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Medjghou Ali</style></author><author><style face="normal" font="default" size="100%">Slimane Noureddine</style></author><author><style face="normal" font="default" size="100%">Chafaa Kheireddine</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fuzzy Logic Controller using the Nonholonomic Constraints for Quadrotor Trajectory Tracking, e-ISSN  2600-7029</style></title><secondary-title><style face="normal" font="default" size="100%">Revue des sciences et sciences de l’ingénieur</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><volume><style face="normal" font="default" size="100%">Volume 6</style></volume><pages><style face="normal" font="default" size="100%">pp 51-59 </style></pages><language><style face="normal" font="default" size="100%">eng</style></language><issue><style face="normal" font="default" size="100%">N° 2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benaziza Walid</style></author><author><style face="normal" font="default" size="100%">Slimane Noureddine</style></author><author><style face="normal" font="default" size="100%">Mallem Ali</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Disturbances Elimination with Fuzzy Sliding Mode Control for Mobile Robot Trajectory Tracking, ISSN / e-ISSN 1336-1376 / 1804-3119</style></title><secondary-title><style face="normal" font="default" size="100%">Advances in Electrical and Electronic Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/327850791_Disturbances_Elimination_with_Fuzzy_Sliding_Mode_Control_for_Mobile_Robot_Trajectory_Tracking</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 16</style></volume><pages><style face="normal" font="default" size="100%">pp 297-310</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The disturbances are the significant issue for the trajectory tracking of mobile robots. Therefore, an adequate control law is presented in this paper and this one is based on Global Terminal Sliding Mode (GTSM) with fuzzy control. This control law aims to guarantee the avoidance of the kinematic disturbances which are injected in the angular and linear velocities, respectively. Moreover, the dynamic model based on exponential reaching law is presented to avoid the uncertainties. The control law provides the asymptotic stability by taking into account the fuzzy rules and Lyapunov theory. Thus, the chattering phenomenon should be avoided. The simulation works prove the robustness of the proposed control law by considering the disturbances function and the robot can follow the desired trajectories.</style></abstract><issue><style face="normal" font="default" size="100%">N° 3</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benaziza Walid</style></author><author><style face="normal" font="default" size="100%">Slimane Noureddine</style></author><author><style face="normal" font="default" size="100%">Ali Mallem</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">PD Terminal Sliding Mode Control Using Fuzzy Genetic Algorithm for Mobile Robot in Presence of Disturbances, ISSN / e-ISSN 1897-8649 / 2080-2145</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of automation, Mobile robotics &amp;intelligent systems</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/326800887_PD_terminal_sliding_mode_control_using_fuzzy_genetic_algorithm_for_mobile_robot_in_presence_of_disturbances</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 12</style></volume><pages><style face="normal" font="default" size="100%">pp 52-60 </style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents a new approach in the field of trajectory tracking for nonholonomic mobile robot in presence of disturbances. The proposed control design is constructed by a kinematic controller, based on PD sliding surface using fuzzy sliding mode for the angular and linear velocities disturbances, in order to tend asymptotically the robot posture error to zero. Thereafter a dynamic controller is presented using as a sliding surface design, a fast terminal function (FTF) whose parameters are generated by a genetic algorithm in order to converge the velocity errors to zero in finite time and guarantee the asymptotic stability of the system using a Lyapunov candidate. The elaborated simulation works in the case of different trajectories confirm the robustness of the proposed approach.</style></abstract><issue><style face="normal" font="default" size="100%">N°2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Medjghou Ali</style></author><author><style face="normal" font="default" size="100%">Slimane Noureddine</style></author><author><style face="normal" font="default" size="100%">Chafaa Kheireddine</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Fuzzy sliding mode control based on backstepping synthesis for unmanned quadrotors, ISSN / e-ISSN 1336-1376 / 1804-3119</style></title><secondary-title><style face="normal" font="default" size="100%">Advances in Electrical and Electronic Engineering</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://advances.utc.sk/index.php/AEEE/article/view/2231</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 16</style></volume><pages><style face="normal" font="default" size="100%">pp 135-146</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The main purpose of this paper is to integrate fuzzy logic technique and backstepping synthesis to sliding mode control to develop a Fuzzy Backstepping-Sliding Mode Controller (FBSMC) to resolve the problem of altitude and attitude tracking control of unmanned quadrotor systems under large external disturbances. First, a backstepping-sliding mode control for quadrotor is introduced. Moreover, a fuzzy logic system is employed to adapt the unknown switching gains to eliminate the chattering phenomenon induced by switching control on the conventional Backstepping-Sliding Mode Controller (BSMC). The dynamical motion equations are obtained by Euler-Newton formalism. The stability of the system is guaranteed in the sense of the Lyapunov stability theorem. Simulation results are carried out using Matlab/Simulink environment to illustrate the effectiveness and robustness of the proposed controller.</style></abstract><issue><style face="normal" font="default" size="100%">issue 2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mallem Ali</style></author><author><style face="normal" font="default" size="100%">Slimane Noureddine</style></author><author><style face="normal" font="default" size="100%">Benaziza Walid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Robust control of mobile robot in presence of disturbances using neural network and global fast sliding mode, ISSN / e-ISSN 1064-1246 / 1875-8967</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Intelligent And Fuzzy Systems</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://content.iospress.com/articles/journal-of-intelligent-and-fuzzy-systems/ifs17864</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 34</style></volume><pages><style face="normal" font="default" size="100%">pp 4345-4354</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;span&gt;In this paper a dynamic tracking control of mobile robot using neural network global fast sliding mode (NN-GFSM) is presented. The proposed strategy combines two control approaches, kinematic control and dynamic control. The laws of kinematic control are based on GFSM in order to determine the ade&lt;/span&gt;&lt;span class=&quot;below-fold&quot; data-below-fold=&quot;IFS17864&quot;&gt;quate velocities for the system stability in finite time. The dynamic controller combines two control techniques, the GFSM to stabilize the velocities errors, and a neural network controller in order to approximate a nonlinear function and to deal the disturbances. This dynamic controller allows the robots to follow the desired trajectory even in the presence of disturbances. The designed controller is dynamically simulated by using Matlab/ Simulink and the simulations results show the efficiency and robustness of the proposed control strategy. &lt;/span&gt;</style></abstract><issue><style face="normal" font="default" size="100%">N° 6</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bouttout Sarah</style></author><author><style face="normal" font="default" size="100%">BentrciaYoussouf</style></author><author><style face="normal" font="default" size="100%">Benkouda Siham</style></author><author><style face="normal" font="default" size="100%">Fortaki Tarek</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates, ISSN / e-ISSN 2077-6772 / 2306-4277</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Nano- and Electronic Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/327284531_Parametric_Study_of_Stacked_Microstrip_Patch_Antenna_with_Dissimilar_Substrates</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 10</style></volume><pages><style face="normal" font="default" size="100%">pp  04004-1-04004-4</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">A complete parametric study of stacked rectangular microstrip patches printed on non-magnetic isotropic substrate is performed. The numerical results are obtained by applying the method of moments to the electric field integral equations. Detailed closed-form expressions of Green's functions are presented. The new results found indicate that, the lower resonant frequency is mainly determined by the patch etched on the thicker layer. The layer having the higher permittivity defines which resonance is mainly determined by the bottom patch, either the upper resonance if the upper layer has the higher permittivity, or the lower resonance in opposite case. All these results offer better understanding and thus a better control of the dual-band operating of the microstrip antenna. Therefore, a proper choice of the antenna parameters becomes possible in order to obtain the desired functional characteristics.</style></abstract><issue><style face="normal" font="default" size="100%">N°4</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bedra, Sami</style></author><author><style face="normal" font="default" size="100%">Bedra , Randa</style></author><author><style face="normal" font="default" size="100%">Benkouda , Siham</style></author><author><style face="normal" font="default" size="100%">Fortaki , Tarek</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Analysis of HTS circular patch antennas including radome effects. International Journal of Microwave and Wireless Technologies</style></title><secondary-title><style face="normal" font="default" size="100%">International Journal of Microwave and Wireless Technologies</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/analysis-of-hts-circular-patch-antennas-including-radome-effects/BA2F048969B099808D2FDBAC4487CC8A#</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">10</style></volume><pages><style face="normal" font="default" size="100%">843-850</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;div class=&quot;row&quot;&gt;
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					In this paper, the resonant frequencies, quality factors and bandwidths of high &lt;span class=&quot;italic&quot;&gt;T&lt;/span&gt;&lt;span class=&quot;sub&quot;&gt;c&lt;/span&gt; superconducting circular microstrip patches in the presence of a dielectric superstrate loading have been studied using Galerkin testing procedure in the Hankel transform domain. The exact Green's function of the grounded dielectric slab is used to derive an electric field integral equation for the unknown current distribution on the circular disc. Thus, surface waves, as well as space wave radiation, are included in the formulation. London's equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. Galerkin testing is used in the resolution of the electric field integral equation. Two solutions using two different basis sets to expand the unknown disk currents are developed. The first set of basis functions used is the complete set of transverse magnetic and transverse electric modes of a cylindrical cavity with magnetic side walls. The second set of basis functions used employ Chebyshev polynomials and enforce the current edge condition. The computed values for a wide range of variations of superstrate thickness and dielectric constant are compared with different theoretical and experimental values available in the open literature, showing close agreement. Results are showing that the superstrate parameters should always be kept into account in the design stage of the superconducting microstrip resonators.
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	&amp;nbsp;
&lt;/div&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">7</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">BentrciaYoussouf</style></author><author><style face="normal" font="default" size="100%">Bouttout Sarah</style></author><author><style face="normal" font="default" size="100%">Benkouda Siham</style></author><author><style face="normal" font="default" size="100%">Fortaki Tarek</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Spectral domain analysis of rectangular stacked patches printed on a substrate characterized by dielectric and magnetic anisotropy, e-ISSN 1572-8137</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-017-1048-x</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 17 </style></volume><pages><style face="normal" font="default" size="100%">pp 399–405</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Spectral domain formulation is provided for the analysis of rectangular stacked patches printed on a substrate characterized by dielectric and magnetic uniaxial anisotropy. Detailed analytical expressions of the dyadic Green’s functions are derived. Galerkin’s procedure is applied to solve the electric field integral equations, and the resonance characteristics are determined by solving the characteristic equation. Numerical results show that the influence of the magnetic anisotropy on the resonant frequencies is highly dependent on the permeability of the medium, where for a non-magnetic medium, the impact of the existing anisotropy was found negligible. However, for a magnetic medium, the anisotropy has a large impact on the resonant frequencies. Moreover, the influence of each of the components of the permeability tensor has been also reported.</style></abstract><issue><style face="normal" font="default" size="100%">N°1</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hafdaoui, Hichem</style></author><author><style face="normal" font="default" size="100%">Benatia, Djamel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A comparative study for two LiNbO3 cuts (Y-Z and Y-X) in detecting bulk acoustic microwaves using Probabilistic Neural Network</style></title><secondary-title><style face="normal" font="default" size="100%">Engineering Science and Technology, an International Journal</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/324125585_A_comparative_study_for_two_LiNbO3_cuts_Y-Z_and_Y-X_in_detecting_bulk_acoustic_microwaves_using_Probabilistic_Neural_Network</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">21</style></volume><pages><style face="normal" font="default" size="100%">527-531</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	This work is mainly on the detection of the bulk acoustic waves (BAWs), where we have compared two Lithium Niobate cuts (Y-Z and Y-X), during the propagation of the acoustic microwaves in the piezoelectric LiNbO3-substrate. In this paper, we have used the classification by Probabilistic Neural Network (PNN) as a tool for numerical analysis in which we classify all the values of the real and imaginary parts of the attenuation coefficient for the propagation velocity. This analysis can allow us to demonstrate the best possibility in utilization for the BAW generation. This study will be very interesting in modeling and realization of acoustic wave devices (ultrasound) based on the propagation of acoustic microwaves.
&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">3</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Smail Toufik</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author><author><style face="normal" font="default" size="100%">Douadi Bendib</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">PSpice implementation and simulation of a new electro-thermal modeling for estimating the junction temperature of low voltage power MOSFET, ISSN / e-ISSN 2077-6772 / 2306-4277</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Nano- and Electronic Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://jnep.sumdu.edu.ua/download/numbers/2018/6/articles/jnep_06004.pdf</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Vol.10</style></volume><pages><style face="normal" font="default" size="100%">pp 06004-06009</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The estimation of the junction temperature (Tj) is very important factor for improving the reliability and efficiency of the power electronic converters. A new electro-thermal (ET) model of low voltage power MOSFET is described in this paper. The electro-thermal model allows fast estimation of the junction temperature, based on the transient thermal impedances (Zth) using the (RC) Foster thermal network model and total power losses. The parameters of the (RC) Foster thermal network model are extracted from the data provided by the manufacturer’s datasheet using particle swarm optimization (PSO) method. Moreover, a dc/dc Buck converter is also analyzed by simulation to evaluate the electro-thermal model. The simulation results indicate a good agreement between the proposed model and manufacturer’s data. Finally, the electro-thermal (ET) model simulation using this (RC) Foster thermal network model shows a reasonable accuracy for estimating the junction temperature in a Dc/Dc buck converter.</style></abstract><issue><style face="normal" font="default" size="100%">N°6</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Yousfi Abderrahim</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author><author><style face="normal" font="default" size="100%">Aissi  Salim</style></author><author><style face="normal" font="default" size="100%">Bencherif Hichem</style></author><author><style face="normal" font="default" size="100%">Saidi Lamir</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Telecommunication, Electronic and Computer Engineering </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://journal.utem.edu.my/index.php/jtec/article/view/3352</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 10</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.</style></abstract><issue><style face="normal" font="default" size="100%">N°2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">S. Kouda</style></author><author><style face="normal" font="default" size="100%">Dendouga Abdelghani</style></author><author><style face="normal" font="default" size="100%">S. Barra</style></author><author><style face="normal" font="default" size="100%">Bendib Toufik</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Design of a Selective Smart Gas Sensor Based on ANN-FL Hybrid Modeling</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Nano- and Electronic Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://jnep.sumdu.edu.ua/download/numbers/2018/6/articles/jnep_06011.pdf</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">10</style></volume><pages><style face="normal" font="default" size="100%">06011-06016</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The selectivity is one of the main challenges to develop a gas sensor, the good chemical species detection in a gaseous mixture decreasing the missed detections. The present paper proposes a new solution for gas sensor selectivity based on artificial neural networks (ANNs) and fuzzy logic (FL) algorithm. We first use ANNs to develop a gas sensor model in order to accurately express its behavior. In a second step, the FL and Matlab environment are used to create a database for a selective model, where the response of this one only depends on one chemical species. Analytical models for the gas sensor and its selective model are implemented into a Performance Simulation Program with Integrated Circuit Emphasis (PSPICE) simulator as an electrical circuit in order to prove the similarity of the analytical model output with that of the MQ-9 gas sensor where the output of the selective model only depends on one gas. Our results indicate the capability of the ANN-FL hybrid modeling for an accurate sensing analysis.</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Lakehal Brahim</style></author><author><style face="normal" font="default" size="100%">Dendouga Abdelghani</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Parameter Extraction of Schottky Solar Cell in Wide Temperature Range UsingGenetic Algorithms, ISSN / e-ISSN 2077-6772 / 2306-4277</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Nano- and Electronic Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/329836321_Parameter_Extraction_of_Schottky_Solar_Cell_in_Wide_Temperature_Range_Using_Genetic_Algorithms</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 10</style></volume><pages><style face="normal" font="default" size="100%">pp 06046-1 - 06046-4</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper proposes a new method based on a genetic algorithm (GA) approach to optimize the electrical parameters such as height barrier, ideality factor, fill factor, open-circuit voltage and power conversion efficiency, in order to improve the electrical performance of Schottky solar cells in an over wide range of temperature. Thus the parameters research process called objective function is used to find the optimal electrical parameters providing greater conversion efficiency. The proposed model results are also compared to experimental and analytical I-V data, where a good agreement has been found between them. Therefore, this approach may provide a theoretical basis and physical insights for Schottky solar cells.</style></abstract><issue><style face="normal" font="default" size="100%"> issue 6</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hedjazi Naceur</style></author><author><style face="normal" font="default" size="100%">Kharboutly Haissam</style></author><author><style face="normal" font="default" size="100%">Benali Abderraouf</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">PCA-based selection of distinctive stability criteria and classification of post-stroke pathological postural behaviour, ISSN / e-ISSN 0158-9938 / 1879-5447</style></title><secondary-title><style face="normal" font="default" size="100%">Australasian Physical &amp; Engineering Sciences in Medicine</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s13246-018-0628-9</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 41</style></volume><pages><style face="normal" font="default" size="100%"> pp 189–199</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, we study the postural behaviour of two categories of people: Post-CVA subjects suffering from cerebrovascular accident syndromes and healthy individuals under several levels of anterior–posterior and medial–lateral sinusoidal disturbances (0.1–0.5 Hz). These perturbations were produced from an omnidirectional platform called Isiskate. Afterwards, we have quantified seventy postural parameters, they were combined of linear stabilometric parameters and non-linear time dependent stochastic parameters using stabilogram diffusion analysis and some spectral attributes using power spectral density. The aim of our analysis is to reduce data dimensionality using principal component analysis (PCA). Furthermore, we proposed a new PCA-related criterion named: criterion of contribution in order to evaluate the contribution of every variable in the resulted system structure, and thus to eliminate the redundant postural characteristics. Afterwards, we highlighted some interesting distinctive parameters. The selected parameters were used thereafter in comparison between the studied groups. Finally, we created a classification model using support vector machines to distinguish stroke patients. Our proposed techniques help in understanding the human postural dynamics and facilitate the diagnosis of pathologies related to equilibrium which can be used to improve the rehabilitation services.</style></abstract><issue><style face="normal" font="default" size="100%"> Issue 1</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hedjazi Naceur</style></author><author><style face="normal" font="default" size="100%">Benali Abderraouf</style></author><author><style face="normal" font="default" size="100%">Bouzit Mourad</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Model identification and evaluation of postural dynamics of healthy and post-stroke individuals under unidirectional perturbations, ISSN / e-ISSN 1746-8094 / 1746-8108</style></title><secondary-title><style face="normal" font="default" size="100%">Biomedical Signal Processing and Control</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S1746809418300466</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 43</style></volume><pages><style face="normal" font="default" size="100%">pp 75-85</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, different techniques of analysis have been used to study the effects of perturbations generated from a&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/robotics&quot; title=&quot;Learn more about Robotics from ScienceDirect's AI-generated Topic Pages&quot;&gt;robotic&lt;/a&gt;&amp;nbsp;mobile platform called Isiskate. These disturbances were applied on two categories of people: post-CVA subjects suffering from cerebrovascular accident and healthy individuals. Our aim is to analyze some assessment tools to distinguish between different postural behaviors. In relevant works, very few studies have addressed the use of nonlinear time-series methods in diagnosis of post-CVA pathological postural behavior. Furthermore, our tools are based on parametric and non-parametric identification procedures, that can yield to an insight on how to improve the examination time. As part of our analysis, the tests were established with several levels of&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/sinusoidal-vibration&quot; title=&quot;Learn more about Sinusoidal Vibration from ScienceDirect's AI-generated Topic Pages&quot;&gt;sinusoidal vibrations&lt;/a&gt;, along the anterior–posterior (A/P) and medial–lateral (M/L) planes. The mobile platform allowed us to record a set of coordinates that includes center of pressure (COP) as a function of time. First, we have quantified some&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/computer-science/linear-parameter&quot; title=&quot;Learn more about Linear Parameter from ScienceDirect's AI-generated Topic Pages&quot;&gt;linear parameters&lt;/a&gt;&amp;nbsp;and&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/spectral-characteristic&quot; title=&quot;Learn more about Spectral Characteristic from ScienceDirect's AI-generated Topic Pages&quot;&gt;spectral characteristics&lt;/a&gt;&amp;nbsp;using&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/power-spectral-density&quot; title=&quot;Learn more about Power Spectral Density from ScienceDirect's AI-generated Topic Pages&quot;&gt;power spectral density&lt;/a&gt;&amp;nbsp;(PSD). Thereafter, we have deduced&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/stochastic-parameter&quot; title=&quot;Learn more about Stochastic Parameter from ScienceDirect's AI-generated Topic Pages&quot;&gt;stochastic parameters&lt;/a&gt;&amp;nbsp;using stabilogram diffusion analysis (SDA), which revealed some interesting invariants. Then transfer functions between the platform velocity and COP trajectory were evaluated. They were carried out at frequencies from 0.1 Hz to 3.3 Hz. Furthermore, we accomplished a comparison of models based on both parametric and nonparametric identification methods. The combination of the proposed techniques has provided us an understanding of human control process by establishing a behavior model and helped us to distinguish patients with postural disorders. This improves postural analysis and facilitates the diagnosis of pathologies related to equilibrium which serves in rehabilitation.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">F.Menacer</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author><author><style face="normal" font="default" size="100%">A.Kadri</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube ISSN / e-ISSN 0263-2241 / 1873- 412X</style></title><secondary-title><style face="normal" font="default" size="100%">Measurement</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0263224118303452</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 125</style></volume><pages><style face="normal" font="default" size="100%"> Pages 232-242</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">This paper presents a new nanoforce sensor based on a suspended carbon&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/nanotubes&quot; title=&quot;Learn more about Nanotubes from ScienceDirect's AI-generated Topic Pages&quot;&gt;nanotube&lt;/a&gt;&amp;nbsp;gate&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/field-effect-transistors&quot; title=&quot;Learn more about Field Effect Transistors from ScienceDirect's AI-generated Topic Pages&quot;&gt;field-effect transistor&lt;/a&gt;. To do so, a numerical investigation of Suspended Gate&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/silicon-on-insulator&quot; title=&quot;Learn more about Silicon on Insulator from ScienceDirect's AI-generated Topic Pages&quot;&gt;Silicon-on-Insulator&lt;/a&gt;&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/field-effect-transistors&quot; title=&quot;Learn more about Field Effect Transistors from ScienceDirect's AI-generated Topic Pages&quot;&gt;MOSFET&lt;/a&gt;&amp;nbsp;(SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube’s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/saturation-region&quot; title=&quot;Learn more about Saturation Region from ScienceDirect's AI-generated Topic Pages&quot;&gt;saturation region&lt;/a&gt;. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/artificial-neural-network&quot; title=&quot;Learn more about Artificial Neural Network from ScienceDirect's AI-generated Topic Pages&quot;&gt;artificial neural networks&lt;/a&gt;&amp;nbsp;(ANNs). We successfully integrate our&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/neural-model&quot; title=&quot;Learn more about Neural Model from ScienceDirect's AI-generated Topic Pages&quot;&gt;neural model&lt;/a&gt;&amp;nbsp;of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/neural-networks&quot; title=&quot;Learn more about Neural Networks from ScienceDirect's AI-generated Topic Pages&quot;&gt;neural networks&lt;/a&gt;, which deals with correction and&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/linearization&quot; title=&quot;Learn more about Linearization from ScienceDirect's AI-generated Topic Pages&quot;&gt;linearization&lt;/a&gt;&amp;nbsp;of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">M. Ouarghi</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author><author><style face="normal" font="default" size="100%">N. Hedjazi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors </style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-018-1228-3</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 17</style></volume><pages><style face="normal" font="default" size="100%">pp 1797–1806</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double gate (DG) dielectric modulated (DM) junctionless (JL) metal oxide semiconductor field effect transistor (MOSFET) with triple material (TM) gate. Based on the dielectric modulation effect, DNA molecules in the nanogap cavity change due to the charge density of biomolecules, producing a change in the threshold voltage of the device. Analytical and numerical analysis was carried out to reveal the impact of physical parameters on the sensitivity of the proposed biosensor. Various characteristics, such as the surface potential, threshold voltage, and drain current were also investigated. The effectiveness of the proposed TM-DG-DM-JL-MOSFET structure with highly doped source/drain extensions is confirmed by comparison of the results with those for a conventional single-materiel (SM) gate DM-JL-MOSFET, revealing a good improvement in sensitivity and making the proposed structure an attractive solution for use in DNA-based sensor applications.</style></abstract><issue><style face="normal" font="default" size="100%"> Issue 4</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kadri, A</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Menacer, Farid</style></author><author><style face="normal" font="default" size="100%">Zohir Dibi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Performance analysis of a new graphene based-phototransistor for ultra-sensitive infrared sensing applications, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402618313494</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">176</style></volume><pages><style face="normal" font="default" size="100%">24-31</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, a new Graphene nanoribbon (&lt;em&gt;GNR&lt;/em&gt;) based&amp;nbsp;&lt;em&gt;Ge&lt;/em&gt;-phototransistor is proposed and investigated numerically by self-consistently solving the Schrödinger equation and&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/poisson-equation&quot; title=&quot;Learn more about Poisson Equation from ScienceDirect's AI-generated Topic Pages&quot;&gt;Poisson equation&lt;/a&gt;&amp;nbsp;using&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/nonequilibrium&quot; title=&quot;Learn more about Nonequilibrium from ScienceDirect's AI-generated Topic Pages&quot;&gt;non-equilibrium&lt;/a&gt;&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/greens-function&quot; title=&quot;Learn more about Greens Function from ScienceDirect's AI-generated Topic Pages&quot;&gt;Green's function&lt;/a&gt;&amp;nbsp;(&lt;em&gt;NEGF&lt;/em&gt;) formalism. An overall performance metrics comparison between both the conventional&amp;nbsp;&lt;em&gt;Si&lt;/em&gt;-based&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/phototransistor&quot; title=&quot;Learn more about Phototransistor from ScienceDirect's AI-generated Topic Pages&quot;&gt;phototransistor&lt;/a&gt;&amp;nbsp;and the proposed design is performed. It is found that the proposed&amp;nbsp;&lt;em&gt;GNR Ge&lt;/em&gt;-phototransistor provides better electrical and optical performances compared to the conventional counterpart. Moreover, using&amp;nbsp;&lt;em&gt;GNR&lt;/em&gt;&amp;nbsp;material as a channel can improve the device performance not only enables a high&amp;nbsp;&lt;em&gt;I&lt;sub&gt;on&lt;/sub&gt;/I&lt;sub&gt;off&lt;/sub&gt;&lt;/em&gt;&amp;nbsp;ratio, but also allows achieving a superior sensitivity for ultra-low&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/optical-power&quot; title=&quot;Learn more about Optical Power from ScienceDirect's AI-generated Topic Pages&quot;&gt;optical powers&lt;/a&gt;. It is also revealed that the&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/responsivity&quot; title=&quot;Learn more about Responsivity from ScienceDirect's AI-generated Topic Pages&quot;&gt;responsivity&lt;/a&gt;&amp;nbsp;of the investigated design can be increased by reducing the&amp;nbsp;&lt;em&gt;GNR&lt;/em&gt;&amp;nbsp;channel length. This underlines the outstanding capability of the proposed design for bridging the gap between modern&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/nanoelectronics&quot; title=&quot;Learn more about Nanoelectronics from ScienceDirect's AI-generated Topic Pages&quot;&gt;nanoelectronic&lt;/a&gt;&amp;nbsp;and&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/nanophotonics&quot; title=&quot;Learn more about Nanophotonics from ScienceDirect's AI-generated Topic Pages&quot;&gt;nanophotonic&lt;/a&gt;&amp;nbsp;technologies. In addition, the proposed&amp;nbsp;&lt;em&gt;GNR&lt;/em&gt;-based&amp;nbsp;&lt;em&gt;Ge&lt;/em&gt;-phototransistor can achieve an acceptable detectivity for very weak optical power intensities, in the order of some&amp;nbsp;&lt;em&gt;Femto-Watts&lt;/em&gt;, which leads to reduce the total&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/electric-power-utilization&quot; title=&quot;Learn more about Electric Power Utilization from ScienceDirect's AI-generated Topic Pages&quot;&gt;power consumption&lt;/a&gt;&amp;nbsp;associated with&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/optical-link&quot; title=&quot;Learn more about Optical Link from ScienceDirect's AI-generated Topic Pages&quot;&gt;optical links&lt;/a&gt;. Therefore, the proposed&amp;nbsp;&lt;em&gt;GNR&lt;/em&gt;&amp;nbsp;phototransistor pinpoints a new path toward achieving an ultrasensitive photoreceiver with&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/low-power-consumption&quot; title=&quot;Learn more about Low Power Consumption from ScienceDirect's AI-generated Topic Pages&quot;&gt;low power consumption&lt;/a&gt;, which makes it potential alternative for chip-level Infrared communication and nano-optoelectronic applications.
&lt;/p&gt;
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