<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Boukhenoufa Noureddine</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Contribution à l&amp;#39;étude des propriétés des films minces de ZnO</style></title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>32</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Oussmani, salah eddine</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Etude et réalisation d&amp;rsquo;un onduleur monophasé multiniveaux à 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size="100%">http://premc.org/doc/PBSI2017/PBSI2017_Book_Of_Abstracts.pdf</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhanced Performance of ZnO/c-Si Solar cell Using InterfaceEngineering with Grooves Morphology</style></title><secondary-title><style face="normal" font="default" size="100%">6th International Conference on Systems and Control</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">DOI: 10.1109/ICoSC.2017.7958747</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">F, Menacer</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modeling and investigation of smart capacitive pressure sensor using artificial neural networks</style></title><secondary-title><style face="normal" font="default" size="100%">6th International Conference on Systems and Control</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/7958746</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Cellules photovoltaïques : De la couche active au panneau solaire photovoltaïque</style></title><secondary-title><style face="normal" font="default" size="100%">Journées portes ouvertes sur la Faculté des Sciences Exactes (JFSE 2017)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://ceur-ws.org/Vol-1849/paper1.pdf</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Aouf, Anouaressadate</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Fouzi Douak</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Thermal stability investigation of power GaN HEMT includingself-heating effects</style></title><secondary-title><style face="normal" font="default" size="100%">6th International Conference on Systems and Control,</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/7958745</style></url></web-urls></urls><pub-location><style face="normal" font="default" size="100%">Batna, Algérie</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benaziza Walid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Mobile robot trajectory tracking using terminal sliding  mode control</style></title><secondary-title><style face="normal" font="default" size="100%">6th IEEE International conference on  Systems and Control (ICSC’2017)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">S.E. Ghamri</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Trajectory Tracking and VFH Obstacle Avoidance for Differential Drive Mobile Robot</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on Automatic control, Telecommunications and Signals (ICATS’17)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>47</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hafdaoui, Hichem</style></author><author><style face="normal" font="default" size="100%">Mehadjebia, Cherifa</style></author><author><style face="normal" font="default" size="100%">Benatia, Djamel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Using Probabilistic Neural Network (PNN) For Extracting Acoustic Microwaves (BAW) In Piezoelectric Material</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on Artificial Intelligence in Renewable Energetic Systems- 22-24 October 2017, Tipaza- ALGERIA</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/chapter/10.1007/978-3-319-73192-6_32</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	I
&lt;/p&gt;

&lt;p style=&quot;text-align: justify;&quot;&gt;
	n this paper, we propose a new method for Bulk waves detection of an acoustic microwave signal during the propagation of acoustic microwaves in a piezoelectric substrate (Lithium Niobate LiNbO&lt;sub&gt;3&lt;/sub&gt;). We have used the classification by probabilistic neural network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the Bulk waves easily. These singularities inform us of presence of Bulk waves in piezoelectric materials.
&lt;/p&gt;

&lt;p style=&quot;text-align: justify;&quot;&gt;
	By which we obtain accurate values for each of the coefficient attenuation and acoustic velocity for Bulk waves. This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.
&lt;/p&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hafdaoui, Hichem</style></author><author><style face="normal" font="default" size="100%">Benatia, Djamel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Comparative Between (LiNbO3) and (LiTaO3) in Detecting Acoustics Microwaves (BAW) Using Probabilistic Neural Network (PNN)</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on Electronics and New Technologies- 14-15 november 2017</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://virtuelcampus.univ-msila.dz/lass/wp-content/uploads/2018/02/Proceeding-INCENT2017.pdf</style></url></web-urls></urls><pub-location><style face="normal" font="default" size="100%">M’Sila, Algeria</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	Our work is mainly about detecting BAW (Bulk acoustic waves), where we compared between Lithium Niobate (LiNbO3) and Lithium Tantalate (LiTaO3) ,during the propagation of acoustic microwaves in a piezoelectric substrate. In this paper, We have used the classification by Probabilistic Neural Network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient
&lt;/p&gt;

&lt;p style=&quot;text-align: justify;&quot;&gt;
	attenuation with the acoustic velocity for conclude whichever is the best in utilization for generating Bulk acoustic waves.This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.
&lt;/p&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gadda Abdelkrim</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Neurocomputational model of annular-ring microstrip antenna with air gap layer</style></title><secondary-title><style face="normal" font="default" size="100%">2nd International Conference on Automatic Control, Telecommunication &amp; Signals (ICATS’17)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.icats.ws/wp-content/uploads/2017/12/Program-icats17-final2.pdf</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Gadda Abdelkrim</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Resonant characteristics of a superconducting thin film resonator using the two-fluid method and artificial neural networks</style></title><secondary-title><style face="normal" font="default" size="100%">2nd International Conference on Automatic Control, Telecommunication &amp; Signals (ICATS’17)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.icats.ws/wp-content/uploads/2017/12/Program-icats17-final2.pdf</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mahamdi Ahmed</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">CAD cavity model analysis of high Tc superconducting rectangular patch printed on anisotropic substrates</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on Electrical Engineering - Boumerdes (ICEE-B)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/8192168</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mahdjoub Abdelhakim</style></author><author><style face="normal" font="default" size="100%">Hafid Abdelaali</style></author><author><style face="normal" font="default" size="100%">Aida Mohammed Salah</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An original way to obtain porous Zn(1&amp;ndash;x)MgxO thin films by spray pyrolysis technique, ISSN 15608034</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Physics, Quantum Electronics &amp; Optoelectronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://pdfs.semanticscholar.org/e4f9/8d665c11b176bac026c444ba787422fcbb08.pdf?_ga=2.192392546.932043383.1582016558-1814151887.1582016558</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 20</style></volume><pages><style face="normal" font="default" size="100%">pp 55-63</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Zn(1–x)MgxO thin films with various concentrations of magnesium were deposited using the spray pyrolysis method. The transmittance spectra recorded for all films exhibit maxima exceeding 90%. The band gap energy of the films with wurtzite structure increases from 3.22 up to 3.60 eV by incorporating Mg into ZnO. However, when the atomic ratio of Mg exceeded 0.4, a second crystalline phase (assigned to cubic MgO) became discernable in XRD patterns, a compressive strain was observed in the wurtzite lattice, and crystallite sizes decreased significantly. In accordance with these observations, finer grains with a pronounced columnar growth were observed in 3D AFM representations and the surface roughness decreases significantly. Finally, selective etching in water yields to porous films with a great surface-to-volume ratio, a lower refractive index and a better light transmission. These porous films with tunable band gap seem to be excellent candidates to various interesting applications.</style></abstract><issue><style face="normal" font="default" size="100%">N°1</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Boukhtache Sebti</style></author><author><style face="normal" font="default" size="100%">Zergoug, M</style></author><author><style face="normal" font="default" size="100%">Benyahia, Kaddour</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Modeling of magnetic properties (Cr/NiO/Ni) based multi-layers deposited by magnetron sputtering using Preisach model, ISSN 2495-3911</style></title><secondary-title><style face="normal" font="default" size="100%">Materials and Devices</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://hal.archives-ouvertes.fr/hal-01598150/document</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">2</style></volume><pages><style face="normal" font="default" size="100%">0310</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	: In the present work, thin films of Cr/NiO/Ni are deposited on glass substrates using RF magnetron sputtering technique. The uniformity and homogeneity of the prepared films were controlled by varying the power of the source, the targetsubstrate distance and the pressure of the plasma gas which is argon. In order to test the Preisach Model, we carried out measurements according to two directions: parallel and perpendicular to the substrate plane using a Vibrating Sample Magnetometer at room temperature. Good agreement has been obtained by comparing the experimental hysteresis loops to the ones determined using Preisach model. We conclude that this model is powerful in predicting the magnetic properties of multilayer systems.
&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">1 </style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Toufik Bentrcia</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Arar,  Djemai</style></author><author><style face="normal" font="default" size="100%">Elasaad Chebaki</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved Reliability Performance of Junctionless Nanoscale DG MOSFET with Graded Channel Doping Engineering, ISSN 1862-6351</style></title><secondary-title><style face="normal" font="default" size="100%">Physica Status Solidi ©</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.201700147</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">14</style></volume><pages><style face="normal" font="default" size="100%">146-152</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In the last few years, an accelerated trend toward the miniaturization of nanoscale circuits has been recorded. In fact, this has been reflected by numerous enhancements at different levels of multi‐gate structures such as the channel body or the gate material. Our aim in this work is to investigate the reliability performance of junctionless DG MOSFET including graded channel aspect. The behavior of the considered device is analyzed numerically using ATLAS‐2D simulator, where degradation phenomena are accounted for in the model. The variation of some analog/RF criteria namely the transconductance and cut‐off frequency are established in terms of the channel length and traps density. The obtained responses indicate the superior immunity of the graded channel device against traps‐induced degradation in comparison to the conventional structure. Thus, this work can offer more insights regarding the benefit of adopting the channel doping engineering for future nanoscale electronic applications.
&lt;/p&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Arar,  Djemai</style></author><author><style face="normal" font="default" size="100%">Zohir Dibi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Efficiency Enhancement of a-Si:H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters, ISSN 1862-6351</style></title><secondary-title><style face="normal" font="default" size="100%">Physica Status Solidi ©</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.201700146</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">14</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, a new particle swarm optimization‐based approach is proposed for the geometrical optimization of the nanowires solar cells to achieve improved optical performance. The proposed hybrid approach combines the 3‐D numerical analysis using accurate solutions of Maxwell's equations and metaheuristic investigation to boost the solar cell total absorbance efficiency. Our purpose resides on modulating the electric field and increasing the light trapping capability by optimizing the radial solar cell geometrical parameters. Moreover, a comprehensive study of vertical core‐shell nanowire arrays optical parameters such as the integral absorption, reflection, and total absorbance efficiency is carried out, in order to reveal the optimized radial solar cells optical performance for low‐cost photovoltaic applications. We find that the proposed hybrid approach plays a crucial role in improving the nanowires solar cells optical performance, where the optimized design exhibits superior total absorbance efficiency and lower total reflection in comparison with those provided by the conventional planar design. The obtained results make the proposed global optimization approach valuable for providing high‐efficiency nanowires solar cells.
&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">10</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Boukhtache Sebti</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Abdelilah, Lahmar</style></author><author><style face="normal" font="default" size="100%">Zergoug, M</style></author><author><style face="normal" font="default" size="100%">Luneau, Dominique</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">RF magnetron sputtering deposition of NiO/Ni bilayer and approach of the Magnetic behavior using the Preisach model, ISSN / e-ISSN 0304-8853 / 1873-4766</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Magnetism and Magnetic Materials</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0304885316333844</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">428</style></volume><pages><style face="normal" font="default" size="100%">377-381</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p id=&quot;sp0045&quot; style=&quot;text-align: justify;&quot;&gt;
	Bilayer of nickel and nickel oxide were deposited on glass substrates using RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique. The&amp;nbsp;magnetic properties&amp;nbsp;of the prepared thin films were carried out at room temperature in both parallel and perpendicular&amp;nbsp;magnetic field&amp;nbsp;to the sample. The Preisach model was applied to provide a&amp;nbsp;mathematical model&amp;nbsp;of the magnetic&amp;nbsp;hysteresis&amp;nbsp;loop in the case of parallel geometry, along the easy axis of the bi-layer NiO / Ni. Good agreement was obtained between the theoretical and experimental results.
&lt;/p&gt;

&lt;ul id=&quot;issue-navigation&quot;&gt;
&lt;/ul&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rechem Djamil</style></author><author><style face="normal" font="default" size="100%">Khial Aicha</style></author><author><style face="normal" font="default" size="100%">Souifi Abdelkader</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors, ISSN 0040-6090</style></title><secondary-title><style face="normal" font="default" size="100%">Thin Solid Films</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0040609016308495</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 623</style></volume><pages><style face="normal" font="default" size="100%">pp 1–7</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/tin-oxide&quot; title=&quot;Learn more about Tin Oxide from ScienceDirect's AI-generated Topic Pages&quot;&gt;Tin oxide&lt;/a&gt; SnO&lt;/span&gt;&lt;sub&gt;2&lt;/sub&gt;&lt;span&gt;&lt;span&gt; &lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/thin-films&quot; title=&quot;Learn more about Thin Films from ScienceDirect's AI-generated Topic Pages&quot;&gt;thin films&lt;/a&gt; were deposited by &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/sol-gel&quot; title=&quot;Learn more about Sol-Gel from ScienceDirect's AI-generated Topic Pages&quot;&gt;sol gel&lt;/a&gt; method on glass substrates. The as-deposited thin films were then annealed at 550&lt;/span&gt;&amp;nbsp;°C for different time durations (15, 30, 60 and 120&amp;nbsp;&lt;span&gt;&lt;span&gt;min). Structural and morphological investigations were carried out on all samples by &lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/x-ray-diffraction&quot; title=&quot;Learn more about X-Ray Diffraction from ScienceDirect's AI-generated Topic Pages&quot;&gt;X-ray diffraction method&lt;/a&gt; and &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/atomic-force-microscopy&quot; title=&quot;Learn more about Atomic Force Microscopy from ScienceDirect's AI-generated Topic Pages&quot;&gt;atomic force microscopy&lt;/a&gt;&lt;span&gt; while optical properties were obtained with UV–Visible &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/spectrophotometers&quot; title=&quot;Learn more about Spectrophotometers from ScienceDirect's AI-generated Topic Pages&quot;&gt;spectrophotometer&lt;/a&gt;&lt;span&gt;&lt;span&gt;. XRD patterns reveals that the samples possess &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/polycrystalline&quot; title=&quot;Learn more about Polycrystalline from ScienceDirect's AI-generated Topic Pages&quot;&gt;polycrystalline&lt;/a&gt; with &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/rutile&quot; title=&quot;Learn more about Rutile from ScienceDirect's AI-generated Topic Pages&quot;&gt;rutile&lt;/a&gt; structure of SnO&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;sub&gt;2&lt;/sub&gt; without any secondary phase. AFM image showed that SnO&lt;sub&gt;2&lt;/sub&gt;&lt;span&gt; thin films having a smooth &lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/surface-morphology&quot; title=&quot;Learn more about Surface Morphology from ScienceDirect's AI-generated Topic Pages&quot;&gt;surface morphology&lt;/a&gt;. The optical properties in the visible range showed that the deposited layers have a high transmission factor. The optical band gap energy varies in the range of 3.61–3.73&lt;/span&gt;&amp;nbsp;&lt;span&gt;eV. Finally, ultraviolet (UV) detection properties of samples as an active layer in UV &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/photometers&quot; title=&quot;Learn more about Photometers from ScienceDirect's AI-generated Topic Pages&quot;&gt;photodetector&lt;/a&gt; devices were investigated. Current-voltage characteristics of the SnO&lt;/span&gt;&lt;sub&gt;2&lt;/sub&gt; thin films are performed under dark and light environment, which show low dark current of 22.9&amp;nbsp;nA with a linear behavior and high current ration&amp;nbsp;&amp;gt;&amp;nbsp;10&lt;sup&gt;4&lt;/sup&gt; under 2&amp;nbsp;V applied voltage and 120&amp;nbsp;&lt;span&gt;min as annealing time. Whereas, high &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/photoelectric-emission&quot; title=&quot;Learn more about Photoelectric Emission from ScienceDirect's AI-generated Topic Pages&quot;&gt;photocurrent&lt;/a&gt; is observed for samples annealing for 30&lt;/span&gt;&amp;nbsp;min. Moreover, the transient photoresponse of the fabricated device is reported under different annealing times.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author><author><style face="normal" font="default" size="100%">Srairi Fawzi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Enhancement of the absorbance figure of merit in amorphous-silicon pin solar cell by using optimized intermediate metallic layers, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402616312591</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 130</style></volume><pages><style face="normal" font="default" size="100%">pp 473-480</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;div id=&quot;abst0005&quot;&gt;
	&lt;p id=&quot;spar0035&quot;&gt;
		&lt;span&gt;&lt;span&gt;In this paper, a new approach based on optimized intermediate &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/metallic-thin-film&quot; title=&quot;Learn more about Metallic Thin Film from ScienceDirect's AI-generated Topic Pages&quot;&gt;metallic thin film&lt;/a&gt; engineering aspect is proposed to improve the absorption behavior for &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/amorphous-silicon&quot; title=&quot;Learn more about Amorphous Silicon from ScienceDirect's AI-generated Topic Pages&quot;&gt;amorphous-Silicon&lt;/a&gt; (&lt;/span&gt;&lt;em&gt;a-Si:H&lt;/em&gt;) &lt;em&gt;p-i-n&lt;/em&gt; Solar Cell. The overall solar cell optical performance comparison between the conventional design and a proposed design including three different intermediate metallic layers (&lt;em&gt;Au&lt;/em&gt;, &lt;em&gt;Ag&lt;/em&gt; and &lt;em&gt;Ti&lt;/em&gt;&lt;span&gt;) is carried out numerically using accurate solutions of Maxwell’s equations. It is found that the proposed design with intermediate metallic sub-layers’ engineering provides superior integral absorption in comparison to that offered by the conventional structure. Therefore, the introduced intermediate metallic layers play a &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/paramount-role&quot; title=&quot;Learn more about Paramount Role from ScienceDirect's AI-generated Topic Pages&quot;&gt;paramount role&lt;/a&gt; in increasing the light absorbance and modulate the electric field in the intrinsic region, where more light can be absorbed again by &lt;/span&gt;&lt;em&gt;a-Si&lt;/em&gt;&lt;span&gt; in the &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/near-infrared&quot; title=&quot;Learn more about near Infrared from ScienceDirect's AI-generated Topic Pages&quot;&gt;near infrared&lt;/a&gt;&lt;span&gt; and &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/infrared-region&quot; title=&quot;Learn more about Infrared Region from ScienceDirect's AI-generated Topic Pages&quot;&gt;infrared-regions&lt;/a&gt; using titanium as intermediate metallic layers. Furthermore, a hybrid computation based on combined numerical- metaheuristic modeling approach is proposed to boost the solar cell performance by optimizing the intermediate metallic layers. The obtained results indicate the advantage of the proposed design methodology in improving the amorphous solar cell performances.&lt;/span&gt;&lt;/span&gt;
	&lt;/p&gt;
&lt;/div&gt;
</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Srairi Fawzi</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Efficiency increase of hybrid organic/inorganic solar cells with optimized interface grating morphology for improved light trapping, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402616314401</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 130</style></volume><pages><style face="normal" font="default" size="100%">pp 1092-1098</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new design methodology by optimizing the silicon/organic interface morphology is proposed to achieve superior optical behavior for pentacene-based organic/inorganic solar cells. Our purpose dwells on reducing the refracting light in the silicon and improves the absorbance behavior in the solar cell. In this context, a &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/numerical-model&quot; title=&quot;Learn more about Numerical Model from ScienceDirect's AI-generated Topic Pages&quot;&gt;numerical model&lt;/a&gt;&lt;span&gt; based on accurate solutions of Maxwell’s equations is developed in order to study the impact of both interface &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/texturization&quot; title=&quot;Learn more about Texturization from ScienceDirect's AI-generated Topic Pages&quot;&gt;texturization&lt;/a&gt; morphologies (triangular and grooves) on the optical absorbance and electrical performance. It is found that the proposed design morphology has profound implication on modulating the electric field, which increases the light trapping capability. It is also confirmed that the overall electrical performance is significantly improved as compared to the conventional organic/inorganic solar cells, where the proposed design exhibits superior integral absorption behavior and large interface area. Moreover, a new hybrid approach by combining of the numerical and metaheuristic models is developed to boost the device performance by optimizing the interface morphology. The obtained results make the proposed design methodology valuable for providing high-efficiency organic/inorganic solar cells.&lt;/span&gt;</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Novel high-performance SOI junctionless FET-based phototransistor using channel doping engineering: Numerical investigation and sensitivity analysis, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402617303376</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 138</style></volume><pages><style face="normal" font="default" size="100%">pp 119–126</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, graded channel doping (&lt;em&gt;GCD&lt;/em&gt;&lt;span&gt;) and junctionless paradigms are proposed as a new ways to improve the optical controlled &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/field-effect-transistor&quot; title=&quot;Learn more about Field-Effect Transistor from ScienceDirect's AI-generated Topic Pages&quot;&gt;field effect transistor&lt;/a&gt; (&lt;/span&gt;&lt;em&gt;OCFET&lt;/em&gt;&lt;span&gt;) and bridging the gap between the high &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/responsivity&quot; title=&quot;Learn more about Responsivity from ScienceDirect's AI-generated Topic Pages&quot;&gt;responsivity&lt;/a&gt;&lt;span&gt; and ultra-low &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/electric-power-utilization&quot; title=&quot;Learn more about Electric Power Utilization from ScienceDirect's AI-generated Topic Pages&quot;&gt;power consumption&lt;/a&gt;. A careful mechanism study based on numerical investigation and a performance comparison between the proposed structure and both the conventional inversion mode (&lt;/span&gt;&lt;/span&gt;&lt;em&gt;IM-OCFET&lt;/em&gt;) and the junctionless (&lt;em&gt;JL-OCFET&lt;/em&gt;&lt;span&gt;) designs is presented. It is found that the graded channel doping feature can efficiently improve the overall &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/optical-device&quot; title=&quot;Learn more about Optical Device from ScienceDirect's AI-generated Topic Pages&quot;&gt;device optical&lt;/a&gt; and electrical performances. Moreover, the proposed design exhibits superior device figures of merit (&lt;/span&gt;&lt;em&gt;FoMs&lt;/em&gt;) and provides ultra-sensitivity behavior as compared to both the conventional &lt;em&gt;IM-OCFET&lt;/em&gt; and the &lt;em&gt;JL-OCFET&lt;/em&gt;&lt;span&gt; counterparts. Our investigation reveals also the outstanding capability of the proposed structure for offering the weak signal detection advantage that demonstrates the unique property of our &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/phototransistor&quot; title=&quot;Learn more about Phototransistor from ScienceDirect's AI-generated Topic Pages&quot;&gt;phototransistor&lt;/a&gt; with &lt;/span&gt;&lt;em&gt;GCD&lt;/em&gt;&lt;span&gt;&lt;span&gt; aspect. These characteristics not only underline the excellent switching behavior of the proposed design but also demonstrate the ability for overcoming the trade-off between the low cost and readily &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/fabrication-process&quot; title=&quot;Learn more about Fabrication Process from ScienceDirect's AI-generated Topic Pages&quot;&gt;fabrication process&lt;/a&gt; in addition to ultrasensitive aspect with &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/low-power-consumption&quot; title=&quot;Learn more about Low Power Consumption from ScienceDirect's AI-generated Topic Pages&quot;&gt;low power consumption&lt;/a&gt;. This makes the proposed &lt;/span&gt;&lt;em&gt;GCD-JL-OCFET&lt;/em&gt; a potential alternative for developing low power communication systems.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications, ISSN / e-ISSN  0030-3992 / 1879-2545</style></title><secondary-title><style face="normal" font="default" size="100%">Optics &amp; Laser Technology</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030399217301342</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 97</style></volume><pages><style face="normal" font="default" size="100%">pp 29-35</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new junctionless optical controlled field effect transistor (&lt;em&gt;JL-OCFET&lt;/em&gt;) and its comprehensive theoretical model is proposed to achieve high optical performance and low cost fabrication process. Exhaustive study of the device characteristics and comparison between the proposed junctionless design and the conventional inversion mode structure (&lt;em&gt;IM-OCFET&lt;/em&gt;) for similar dimensions are performed. Our investigation reveals that the proposed design exhibits an outstanding capability to be an alternative to the &lt;em&gt;IM-OCFET&lt;/em&gt; due to the high performance and the weak signal detection benefit offered by this design. Moreover, the developed analytical expressions are exploited to formulate the objective functions to optimize the device performance using Genetic Algorithms (&lt;em&gt;GAs&lt;/em&gt;) approach. The optimized &lt;em&gt;JL-OCFET&lt;/em&gt; not only demonstrates good performance in terms of derived drain current and responsivity, but also exhibits superior signal to noise ratio, low power consumption, high-sensitivity, high &lt;em&gt;I&lt;sub&gt;ON&lt;/sub&gt;&lt;/em&gt;/&lt;em&gt;I&lt;sub&gt;OFF&lt;/sub&gt;&lt;/em&gt; ratio and high-detectivity as compared to the conventional &lt;em&gt;IM-OCFET&lt;/em&gt; counterpart. These characteristics make the optimized &lt;em&gt;JL-OCFET&lt;/em&gt; potentially suitable for developing low cost and ultrasensitive photodetectors for high-performance and low cost inter-chips data communication applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Arar,  Djemai</style></author><author><style face="normal" font="default" size="100%">Zohir Dibi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of metal layer in improving the UV-photodetector performance of TiO2/Metal/TiO2/Si structure</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Luminescence</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0022231316308080</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">191</style></volume><pages><style face="normal" font="default" size="100%">117-121</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;span&gt;In this paper, a new metallic thin film engineering aspect is proposed to achieve superior absorption for &lt;/span&gt;&lt;em&gt;TiO&lt;/em&gt;&lt;sub&gt;&lt;em&gt;2&lt;/em&gt;&lt;/sub&gt;&lt;em&gt;/Metal/TiO&lt;/em&gt;&lt;sub&gt;&lt;em&gt;2&lt;/em&gt;&lt;/sub&gt; on Silicon substrate &lt;em&gt;UV&lt;/em&gt;&lt;span&gt;-based photodetectors (&lt;/span&gt;&lt;em&gt;PDs&lt;/em&gt;&lt;span&gt;). The overall device optical performance comparison with three dissimilar metallic layers (&lt;/span&gt;&lt;em&gt;Au&lt;/em&gt;, &lt;em&gt;Ti&lt;/em&gt;, and &lt;em&gt;Ag&lt;/em&gt;) is performed numerically using accurate solutions of Maxwell׳s equations. A comprehensive study of the device optical parameters such as the integral absorption, reflection, and rejection ratio is carried out, in order to reveal the device optical performance for &lt;em&gt;UV&lt;/em&gt;&lt;span&gt; optical interconnects and environment monitoring applications. We find that the optical performance are considerably improved as compared to the conventional design, where the proposed design offers superior integral absorption and lower total reflection with an acceptable rejection ratio in comparison with those provided by the conventional one. These improvements suggest the opportunity for optimizing the proposed design using particle swarm optimization (&lt;/span&gt;&lt;em&gt;PSO&lt;/em&gt;) approach for achieving higher optical performance, where excellent capability is recorded in enhancing the device optical behavior. The obtained results make the prop sed device very efficient for compatible &lt;em&gt;CMOS&lt;/em&gt; modern technology.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Toufik Bentrcia</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Elasaad Chebaki</style></author><author><style face="normal" font="default" size="100%">Arar,  Djemai</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A Kriging framework for the efficient exploitation of the nanoscale junctioless DG MOSFETs including source/drain extensions and hot carrier effect</style></title><secondary-title><style face="normal" font="default" size="100%">materials-today</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S2214785317312956</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">4</style></volume><pages><style face="normal" font="default" size="100%">6930-6937</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;div class=&quot;Abstracts u-font-serif&quot; id=&quot;abstracts&quot;&gt;
	&lt;div class=&quot;abstract author&quot; id=&quot;ab005&quot; lang=&quot;en&quot;&gt;
		&lt;div id=&quot;as005&quot;&gt;
			&lt;p id=&quot;sp0005&quot; style=&quot;text-align: justify;&quot;&gt;
				Recently, the Junctionless Double Gate MOSFET with source/drain extensions has proved competitive performance measures due to the reduction of the series resistance between the metal contacts and source/drain regions. However, the precise modeling of different response functions is still an important issue especially at nanoscale level because of the inclusion of complex phenomena such as quantum transport mechanisms and hot carrier degradation effect. In this perspective, our aim in the presented work is to investigate the efficiency of a novel approach based on Kriging metamodeling and multi-objective particle swarm optimization for the exploitation of the considered device in terms of some analog/RF performances. Data generated by ATLAS-2D simulator, are used to establish Kriging metamodels for the Gain and Transconductance Generation Factor. It is highlighted that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. As a result, a wide range of biasing configurations is available to the designer depending on imposed constraints.
			&lt;/p&gt;
		&lt;/div&gt;
	&lt;/div&gt;
&lt;/div&gt;
</style></abstract><issue><style face="normal" font="default" size="100%"> 7</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Improved ZnO/glass thin film UV photodetector performance based on introduction of intermediate metallic sub-layers, ISSN / e-ISSN 1369-7021 / 1873-4103</style></title><secondary-title><style face="normal" font="default" size="100%">materials-today</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S221478531731310X</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 4</style></volume><pages><style face="normal" font="default" size="100%">pp  6930-6937</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, new multilayer design based on ZnO/Ag/ZnO structure is proposed as a new way to achieve UV-based photodetector (PD) with superior optical behavior. Our purpose resides on reducing the refracting light and achieving an effective absorption in the Ag metallic sub-layers. New numerical model based on accurate solutions of Maxwell’s equations is developed in order to elucidate the impact of the metallic sub-layers on the UV-PD optical performance. An overall analysis regarding the optical parameters such as the integral absorption and the total reflection is conducted. It is found that the metallic sub-layers have profound implications on modulating the electric field in the structure and facilitating photon forward scattering in the ZnO sub-layers which led to better optical behavior. Moreover, Particle Swarm Optimization (PSO) approach is proposed as a metaheuristic technique to reach effectiveness absorption through carefully adjusting the Ag and ZnO sub-layers thickness. It is confirmed that the optimized design can provide superior optical performance as compared to the conventional counterpart, where the optimized multilayer design exhibits an enhancement of 60% in the integral absorption over ZnO-based PD. The obtained results make the proposed multilayer design efficient for providing high performance PDs for communication applications.</style></abstract><issue><style face="normal" font="default" size="100%"> Issue 7</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fouzi Douak</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S074960361731008X</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 109</style></volume><pages><style face="normal" font="default" size="100%">pp 869-879</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;span&gt;&lt;span&gt;In this paper, a new hybrid approach by combining numerical investigation and Support Vector Machines (SVMs) classifier is proposed to study the &lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/thermoelectrics&quot; title=&quot;Learn more about Thermoelectrics from ScienceDirect's AI-generated Topic Pages&quot;&gt;thermoelectric&lt;/a&gt; performance of &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/nanoscale&quot; title=&quot;Learn more about Nanoscale from ScienceDirect's AI-generated Topic Pages&quot;&gt;nanoscale&lt;/a&gt; Double Gate Junctionless &lt;/span&gt;&lt;span&gt;DG JL &lt;em&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/field-effect-transistors&quot; title=&quot;Learn more about Field Effect Transistors from ScienceDirect's AI-generated Topic Pages&quot;&gt;MOSFET&lt;/a&gt;&lt;/em&gt;&lt;/span&gt;. In this context, a new Figure&amp;nbsp;of Merit (&lt;em&gt;FoM&lt;/em&gt;) parameter which combines both electrical and reliability characteristics is proposed. Moreover, the impact of Gaussian channel doping profile (&lt;em&gt;GCD&lt;/em&gt;) in enhancing the &lt;em&gt;DG JL MOSFET&lt;/em&gt; reliability against the self-heating effects (&lt;em&gt;SHEs&lt;/em&gt;) is presented. The proposed design thermal stability and electrical characteristics are investigated and compared with those of the conventional structure in order to reveal the device performance including SHEs. It is found that the amended channel doping has a profound implication in improving both the device electrical performance and the reliability against the undesired self-heating and short channel effects (&lt;em&gt;SCEs&lt;/em&gt;). Furthermore, the transistor thermal behavior analysis involves classification of the device performance by taking into account the device reliability. For this purpose, &lt;em&gt;SVMs&lt;/em&gt; are adopted for supervised classification in order to identify the most favorable design configurations associated with suppressed &lt;em&gt;SHEs&lt;/em&gt; and improved electrical performance. We find that the proposed design methodology has succeeded in selecting the better designs that offer superior reliability against the &lt;em&gt;SHEs&lt;/em&gt;. The obtained results suggest the possibility for bridging the gap between high electrical performances with better immunity to the &lt;em&gt;SHEs&lt;/em&gt;.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">A novel high-performance self-powered ultraviolet photodetector: Concept, analytical modeling and analysis, ISSN 0749-6036</style></title><secondary-title><style face="normal" font="default" size="100%">Superlattices and Microstructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0749603617320839</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume112</style></volume><pages><style face="normal" font="default" size="100%">pp 480-492</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new &lt;em&gt;MSM-UV&lt;/em&gt;-photodetector (&lt;em&gt;PD&lt;/em&gt;&lt;span&gt;) based on dual wide &lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/band-gap-material&quot; title=&quot;Learn more about Band-Gap Material from ScienceDirect's AI-generated Topic Pages&quot;&gt;band-gap material&lt;/a&gt; (&lt;/span&gt;&lt;em&gt;DM&lt;/em&gt;&lt;span&gt;) engineering aspect is proposed to achieve high-performance self-powered device. Comprehensive analytical models for the proposed sensor &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/photoelectric-emission&quot; title=&quot;Learn more about Photoelectric Emission from ScienceDirect's AI-generated Topic Pages&quot;&gt;photocurrent&lt;/a&gt; and the device properties are developed incorporating the impact of &lt;/span&gt;&lt;em&gt;DM&lt;/em&gt; aspect on the device photoelectrical behavior. The obtained results are validated with the numerical data using commercial &lt;em&gt;TCAD&lt;/em&gt; software. Our investigation demonstrates that the adopted design amendment modulates the electric field in the device, which provides the possibility to drive appropriate photo-generated carriers without an external applied voltage. This phenomenon suggests achieving the dual role of effective carriers’ separation and an efficient reduce of the dark current. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (&lt;em&gt;PSO&lt;/em&gt;) is proposed to achieve improved photoelectric behavior at zero bias that can ensure favorable self-powered &lt;em&gt;MSM-&lt;/em&gt;based &lt;em&gt;UV-PD&lt;/em&gt;. It is found that the proposed design methodology has succeeded in identifying the optimized design that offers a self-powered device with high-responsivity (&lt;em&gt;98&amp;nbsp;mA/W&lt;/em&gt;) and superior &lt;em&gt;I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;ON&lt;/em&gt;&lt;/sub&gt;&lt;em&gt;/I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;OFF&lt;/em&gt;&lt;/sub&gt; ratio (&lt;em&gt;480&amp;nbsp;dB&lt;/em&gt;). These results make the optimized &lt;em&gt;MSM-UV-DM&lt;/em&gt;-&lt;em&gt;PD&lt;/em&gt; suitable for providing low cost self-powered devices for high-performance optical communication and monitoring applications.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bedra, Sami</style></author><author><style face="normal" font="default" size="100%">Bedra , Randa</style></author><author><style face="normal" font="default" size="100%">Benkouda , Siham</style></author><author><style face="normal" font="default" size="100%">Fortaki , Tarek</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Efficient CAD Model to Analysis of High Tc Superconducting Circular Microstrip Antenna on Anisotropic Substrates. Advanced Electromagnetics</style></title><secondary-title><style face="normal" font="default" size="100%">ADVANCED ELECTROMAGNETICS</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.aemjournal.org/index.php/AEM/article/view/446</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">6</style></volume><pages><style face="normal" font="default" size="100%">40-45</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge was developed. The cavity model combined with London’s equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics of high Tc superconducting circular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials.&amp;nbsp; Merits of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, numerical results for the dielectric anisotropic substrates effects on the operating frequencies for the case of superconducting circular patch are also presented.
&lt;/p&gt;
</style></abstract><issue><style face="normal" font="default" size="100%">2</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bedra, Sami</style></author><author><style face="normal" font="default" size="100%">Bedra , Randa</style></author><author><style face="normal" font="default" size="100%">Benkouda , Siham</style></author><author><style face="normal" font="default" size="100%">Fortaki , Tarek</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Superstrate loading effects on the resonant characteristics of high Tc superconducting circular patch printed on anisotropic materials</style></title><secondary-title><style face="normal" font="default" size="100%">Physica C: Superconductivity and Its Applications</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0921453417304082</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">543</style></volume><pages><style face="normal" font="default" size="100%">1-7</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, the effects of both anisotropies in the substrate and superstrate loading on the resonant frequency and bandwidth of high-T&lt;em&gt;c&lt;/em&gt; superconducting circular microstrip patch in a substrate-superstrate configuration are investigated. A rigorous analysis is performed using a dyadic Galerkin's method in the vector Hankel transform domain. Galerkin's procedure is employed in the spectral domain where the TM and TE modes of the cylindrical cavity with magnetic side walls are used in the expansion of the disk current. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. London's equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. The accuracy of the analysis is tested by comparing the computed results with previously published data for several anisotropic substrate-superstrate materials. Good agreement is found among all sets of results. The numerical results obtained show that important errors can be made in the computation of the resonant frequencies and bandwidths of the superconducting resonators when substrate dielectric anisotropy, and/or superstrate anisotropy are ignored. Other theoretical results obtained show that the superconducting circular microstrip patch on anisotropic substrate-superstrate with properly selected permittivity values along the optical and the non-optical axes combined with optimally chosen structural parameters is more advantageous than the one on isotropic substrate-superstrate by exhibiting wider bandwidth characteristic.
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</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Bedra Sami</style></author><author><style face="normal" font="default" size="100%">Benkouda Siham</style></author><author><style face="normal" font="default" size="100%">Fortaki Tarek</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An efficient study of circular microstrip antenna on suspended and composite substrates, e-ISSN 1572-8137</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-017-1012-9</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 16</style></volume><pages><style face="normal" font="default" size="100%">pp 922-2017</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, an efficient full-wave analysis of a circular microstrip patch printed on suspended and composite substrates is performed using a dyadic Green’s function formulation. Galerkin’s technique is used in the resolution of the integral equation of the electric field. The TM set of modes issued, from the magnetic wall cavity model, are used to expand the unknown currents on the circular patch. The radiation patterns are expressed regarding the transforms of the currents. The convergence of the method is proven by calculating the resonant frequencies, half-power bandwidths, and quality factors for several configurations. The computed results are found to be in excellent agreement with those observed in the literature. The numerical results obtained show that the bandwidth increases with the increase in the thickness of the suspended or composite substrates, especially for low permittivity of the second layer. Also, it is demonstrated that the resonant frequencies of the circular microstrip patch on suspended and composite substrates can be adjusted to obtain the maximum operating frequency of the antenna. Finally, the effect of the presence of the second layer under the circular patch on the radiation patterns is also investigated.</style></abstract><issue><style face="normal" font="default" size="100%">N° 3</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Barkat, Lamia</style></author><author><style face="normal" font="default" size="100%">Bedra, Sami</style></author><author><style face="normal" font="default" size="100%">Fortaki , Tarek</style></author><author><style face="normal" font="default" size="100%">Bedra , Randa</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Neurospectral computation for the resonant characteristics of microstrip patch antenna printed on uniaxially anisotropic substrates</style></title><secondary-title><style face="normal" font="default" size="100%">International Journal of Microwave and Wireless Technologies</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/neurospectral-computation-for-the-resonant-characteristics-of-microstrip-patch-antenna-printed-on-uniaxially-anisotropic-substrates/859FA2B6042DA2</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">9</style></volume><pages><style face="normal" font="default" size="100%">613-620</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;div class=&quot;row&quot;&gt;
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					Modeling and design of rectangular microstrip patch printed on isotropic or anisotropic substrate are accomplished in this paper. The use of spectral domain method in conjunction with artificial neural networks (ANNs) to compute the resonant characteristics of rectangular microstrip patch printed on isotropic or anisotropic substrates. The moment method implemented in the spectral domain offers good accurateness, but its computational cost is high owing to the evaluation of the slowly decaying integrals and the iterative nature of the solution process. The paper introduces the electromagnetic knowledge combined with ANN in the analysis of rectangular microstrip antenna on uniaxially anisotropic substrate to reduce the complexity of the spectral domain method and to minimize the CPU time necessary to obtain the numerical results. The numerical comparison between neurospectral and conventional moment methods shows significant improvements in time convergence and computational cost. Hence, the use of neurospectral approach presented here as a promising fast technique in the design of microstrip antennas.
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</style></abstract><issue><style face="normal" font="default" size="100%">3</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Arar,  Djemai</style></author><author><style face="normal" font="default" size="100%">Zohir Dibi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Efficiency Enhancement of a‐Si:H/c‐Si‐Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters, ISSN / e-ISSN 1610-1642 / 1610-1642</style></title><secondary-title><style face="normal" font="default" size="100%">Current topics in solid state physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.201700146</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, a new particle swarm optimization‐based approach is proposed for the geometrical optimization of the nanowires solar cells to achieve improved optical performance. The proposed hybrid approach combines the 3‐D numerical analysis using accurate solutions of Maxwell's equations and metaheuristic investigation to boost the solar cell total absorbance efficiency. Our purpose resides on modulating the electric field and increasing the light trapping capability by optimizing the radial solar cell geometrical parameters. Moreover, a comprehensive study of vertical core‐shell nanowire arrays optical parameters such as the integral absorption, reflection, and total absorbance efficiency is carried out, in order to reveal the optimized radial solar cells optical performance for low‐cost photovoltaic applications. We find that the proposed hybrid approach plays a crucial role in improving the nanowires solar cells optical performance, where the optimized design exhibits superior total absorbance efficiency and lower total reflection in comparison with those provided by the conventional planar design. The obtained results make the proposed global optimization approach valuable for providing high‐efficiency nanowires solar cells.
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</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Dendouga Abdelghani</style></author><author><style face="normal" font="default" size="100%">Oussalah Slimane</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Comparative Analysis of Two Op-Amp Topologies for a 40MS/s 8-bitPipelined ADC in 0.18μm CMOS Technology, ISSN / e-ISSN 1790-5052 / 2224-3488</style></title><secondary-title><style face="normal" font="default" size="100%">WSEAS TRANSACTIONS ON SIGNAL PROCESSING</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://www.wseas.org/multimedia/journals/signal/2017/a205801-593.php</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 13</style></volume><pages><style face="normal" font="default" size="100%">pp 83-89</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The performances of two full differential operational amplifiers (Op-Amps) telescopic and folded-cascode are evaluated to satisfy the stringent requirements on the amplifier to be used in a Multiplying Digital-to-Analog Converter (MDAC) stage of a pipelined ADC (Analog-to-Digital Converter). The paper shows the solutions found to reach high gain, wide bandwidth and short settling time without degrading too much the output swing. The Op-Amp specifications are extracted according to the ADC requirements, then the two Op-Amp topologies are designed, tested and their performances are compared. Simulation results show that the Op-Amp folded-cascode topology is more suitable architecture for pipelined ADC than the telescopic one. Moreover, the use of this type of Op-Amp generates an Integral Non-Linearity (INL) error less than that of the telescopic one. The analyses and simulation results are obtained using 0.18 µm AMS (Austria Mikro System) CMOS process parameters with a power supply voltage of 1.8V. The predicted performance is verified by analysis and simulations using Cadence EDA simulator.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Meddour Fayçal</style></author><author><style face="normal" font="default" size="100%">Dibi Zohir</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An efficient small size electromagnetic energy harvesting sensor for low-DC-power applications, ISSN / e-ISSN 1751-8725 / 1751-8733</style></title><secondary-title><style face="normal" font="default" size="100%"> IET Microwaves, Antennas &amp; Propagation</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/document/7887591</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 11</style></volume><pages><style face="normal" font="default" size="100%">pp 483 - 489</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">An efficient small size electromagnetic energy harvesting sensor for low-DC-power applications is proposed. The sensor consists of two main parts: a dual polarisation square patch antenna used to collect the RF energy at a central frequency of 2.45 GHz, and two voltage doublers rectifier circuit for the RF-to-DC conversion. The overall size of the design is 50 × 50 × 6.2 mm&amp;nbsp;&lt;sup&gt;3&lt;/sup&gt;&amp;nbsp;. Firstly, the antenna is designed using high-frequency structure simulator software; followed by the design of the rectifier circuit in advanced design system. After simulations, a sensor prototype is fabricated using F4B as the antenna substrate. Measurements show that the sensor achieves a comparatively high maximum measured efficiency of 41% for a power level of -10 dBm. The sensor has a simple structure, it is compact sized, light weight, and presents a high RF-to-DC conversion efficiency for low-RF-power levels which can be used to charge different low-DC-power devices.</style></abstract><issue><style face="normal" font="default" size="100%"> Issue 4</style></issue></record></records></xml>