<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benyahia, Kaddour</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author><author><style face="normal" font="default" size="100%">A Saidi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Alloys and Compounds </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0925838820346053</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">859</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p id=&quot;sp0045&quot; style=&quot;text-align: justify;&quot;&gt;
	Cost-effective multispectral&amp;nbsp;photodetectors&amp;nbsp;(&lt;em&gt;PDs&lt;/em&gt;) exhibiting a high&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;-&lt;em&gt;Visible&lt;/em&gt;-&lt;em&gt;NIR&lt;/em&gt;&amp;nbsp;photoresponse offer an avenue for developing environmental monitoring devices, imaging sensors, object discrimination, and optical links. However,&amp;nbsp;&lt;em&gt;PDs&lt;/em&gt;&amp;nbsp;based on a single semiconductor as light-sensitive layer are unable to provide broadband photodetection properties. In this work, a new&amp;nbsp;&lt;em&gt;PD&lt;/em&gt;&amp;nbsp;device based on&amp;nbsp;&lt;em&gt;ZnO-ZnS&lt;/em&gt;&amp;nbsp;Microstructured Composite (&lt;em&gt;MC&lt;/em&gt;) which achieves a high&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;-&lt;em&gt;V&lt;/em&gt;isible-&lt;em&gt;NIR&lt;/em&gt;&amp;nbsp;photoresponse is demonstrated. The&amp;nbsp;&lt;em&gt;ZnO-ZnS MC&lt;/em&gt;&amp;nbsp;is elaborated by combining vacuum thermal evaporation technique and a suitable annealing process. Scanning Electron Microscopy (&lt;em&gt;SEM&lt;/em&gt;), energy-dispersive&amp;nbsp;&lt;em&gt;X&lt;/em&gt;-ray spectroscopy (&lt;em&gt;EDS&lt;/em&gt;),&amp;nbsp;&lt;em&gt;X&lt;/em&gt;-ray diffraction (&lt;em&gt;XRD&lt;/em&gt;), and&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;-&lt;em&gt;V&lt;/em&gt;is-&lt;em&gt;NIR&lt;/em&gt;&amp;nbsp;spectroscopy were used to elucidate the morphological, structural and optical properties of the prepared sample. It was demonstrated that the&amp;nbsp;&lt;em&gt;ZnO-ZnS MC&lt;/em&gt;&amp;nbsp;can be useful to enhance the visible absorbance efficiency by promoting efficient light-scattering effects. It is revealed that the prepared&amp;nbsp;&lt;em&gt;UV-Vis-NIR PD&lt;/em&gt;&amp;nbsp;offers a low dark current of&amp;nbsp;&lt;em&gt;5&amp;nbsp;nA&lt;/em&gt;, a high&amp;nbsp;&lt;em&gt;I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;ON&lt;/em&gt;&lt;/sub&gt;&lt;em&gt;/I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;OFF&lt;/em&gt;&lt;/sub&gt;&amp;nbsp;ratio of&amp;nbsp;&lt;em&gt;78&amp;nbsp;dB&lt;/em&gt;&amp;nbsp;and an enhanced responsivity in&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;, visible and&amp;nbsp;&lt;em&gt;NIR&lt;/em&gt;&amp;nbsp;ranges. The proposed multispectral&amp;nbsp;&lt;em&gt;PD&lt;/em&gt;&amp;nbsp;demonstrates a high&amp;nbsp;&lt;em&gt;I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;ON&lt;/em&gt;&lt;/sub&gt;&lt;em&gt;/I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;OFF&lt;/em&gt;&lt;/sub&gt;&amp;nbsp;current ratio under self-powered working regime. Therefore, the proposed&amp;nbsp;&lt;em&gt;ZnO-ZnS MC&lt;/em&gt;&amp;nbsp;is believed to provide new insights in developing efficient, self-powered and low-cost multispectral&amp;nbsp;&lt;em&gt;PDs&lt;/em&gt;&amp;nbsp;for high-performance optoelectronic systems.
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</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Performance assessment of a new low-cost RF sputtered Schottky diode based on a-Si/Ti structure</style></title><secondary-title><style face="normal" font="default" size="100%">International Conference on SMACD and 16th Conference on PRIME</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://ieeexplore.ieee.org/abstract/document/9548000</style></url></web-urls></urls><pub-location><style face="normal" font="default" size="100%">online</style></pub-location><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, a new efficient and low-cost Schottky Diode (SD) based on a-Si/Ti structure was elaborated using RF magnetron sputtering technique. An exhaustive investigation of structural and electrical properties was performed, where the sputtered device was characterized using X-ray diffraction (XRD) and Keithley (4200-SCS) to measure the current-voltage characteristics. Moreover, a comprehensive study regarding the impact of the Ti layers on the device characteristics is carried out. It was demonstrated that implementing Ti intermediate layers could induce depletion regions at the interfaces, leading to significantly enlarged voltage barrier height. Furthermore, the elaborated SD exhibits a rectification behavior providing an appropriate current with a favorable ideality factor. This is mainly due to the reduced series resistance of the multilayer structure as confirmed by electrical analysis. Therefore, the proposed SD structure based on Ti intermediate layers provides improved performance and can open a new route for the fabrication of promising alternative devices for microelectronic and sensing applications.
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</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author><author><style face="normal" font="default" size="100%">A Saidi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Perovskite/InGaAs tandem cell exceeding 29% efficiency via optimizing spectral splitter based on RF sputtered ITO/Ag/ITO ultra-thin structure</style></title><secondary-title><style face="normal" font="default" size="100%">Physica E: Low-dimensional Systems and Nanostructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S1386947720316866</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">128</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, the optimization, elaboration and characterization of an efficient spectral&amp;nbsp;beam splitter&amp;nbsp;based on a simple RF sputtered ITO/Ag/ITO (IAI) ultra-thin multilayer structure are presented. An experimental investigation assisted by&amp;nbsp;Genetic Algorithm&amp;nbsp;(GA) metaheuristic optimization was carried out to achieve high-performance spectral splitter for tandem solar cell applications. The RF&amp;nbsp;magnetron sputtering&amp;nbsp;method was used to elaborate the optimized IAI structure. The optical and structural properties of the sputtered splitter were also analyzed using UV–Vis-IR spectroscopy and X-ray diffraction (XRD) measurements. It is found that the elaborated splitter structure offers 84% of transparency and a high reflectance of 87% with an optimum cut-off wavelength of 800&amp;nbsp;nm. This is attributed to the design approach, which leads to promote spectral splitting mechanism by inducing efficient&amp;nbsp;optical modulation. Interestingly, a new Figure of Merit (FoM) parameter, which evaluates the optical splitting performances is proposed. Moreover, a new Perovskite/InGaAs tandem cell is proposed and analyzed to show the impact of the elaborated spectrum splitter on the solar cell efficiency. It is revealed that the investigated solar cell exhibits an improved efficiency approaching 30%. The latter value far surpasses that provided by&amp;nbsp;Perovskite&amp;nbsp;tandem cells. These results indicate that our spectrum splitting approach can open a new pathway towards designing high-performance tandem&amp;nbsp;photovoltaic devices.
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</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author><author><style face="normal" font="default" size="100%">A Saidi</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Multispectral photodetection using low-cost sputtered NiO/Ag/ITO heterostructure: From design concept to elaboration</style></title><secondary-title><style face="normal" font="default" size="100%">Ceramics International</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S0272884221005034#!</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">47</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p id=&quot;abspara0010&quot; style=&quot;text-align: justify;&quot;&gt;
	High-performance multispectral&amp;nbsp;photodetectors&amp;nbsp;(PDs) are highly attractive for the emerging optoelectronic applications. In this work, a new broadband PD based on&amp;nbsp;&lt;em&gt;p&lt;/em&gt;-NiO/Ag/n-ITO&amp;nbsp;heterostructure&amp;nbsp;was fabricated by RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique at room temperature. The tri-layered structure offering multispectral detection property was first identified using theoretical calculations based on combined FDTD and Particle Swarm Optimization (PSO) techniques. The crystal structure of the elaborated sensor was analyzed using X-ray diffraction (XRD) method. The device optical properties were investigated by UV–Vis–NIR spectroscopy. The NiO/Ag/ITO heterostructured PD shows a high average absorbance of 63% over a wide spectrum range of [200&amp;nbsp;nm–1100nm]. Compared with NiO and ITO thin-films, the performances of the heterostructured device are considerably enhanced. It was found that the prepared PD with NiO/Ag/ITO heterostructure merges the benefits of multispectral photodetection with reduced&amp;nbsp;&lt;a href=&quot;https://www.sciencedirect.com/topics/materials-science/optical-loss&quot; title=&quot;Learn more about optical losses from ScienceDirect's AI-generated Topic Pages&quot;&gt;optical losses&lt;/a&gt;&amp;nbsp;and efficient transfer of photo-induced carrier. The device demonstrated a high I&lt;sub&gt;ON&lt;/sub&gt;/I&lt;sub&gt;OFF&lt;/sub&gt;&amp;nbsp;ratio of 78&amp;nbsp;dB and an enhanced responsivity under UV, visible and NIR lights (171&amp;nbsp;mA/W at 365&amp;nbsp;nm, 67&amp;nbsp;mA/W at 550&amp;nbsp;nm and 93&amp;nbsp;mA/W at 850&amp;nbsp;nm). The broadband photodetection property enabled by the optimized NiO/Ag/ITO heterostructure opens a new route for the elaboration of low-cost devices that can offer multiple sensing purposes, which are highly suitable for optoelectronic applications.
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</style></abstract><issue><style face="normal" font="default" size="100%">11</style></issue></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">A Saidi</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Non-Crystalline Solids</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0022309321005317</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">574</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	The rapid progress of wide band gap SiC semiconductor material opens up new opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and power systems for a wide range of advanced applications. In this paper, low-noise solar-blind UV&amp;nbsp;photodetector&amp;nbsp;(PD) based on all-amorphous ZnO/SiC&amp;nbsp;heterostructure&amp;nbsp;was fabricated via RF&amp;nbsp;magnetron sputtering&amp;nbsp;technique. The device structural and optical properties were investigated before and after thermal treatment at different annealing temperature values varying from 300&amp;nbsp;°C to 600&amp;nbsp;°C. UV-Visible&amp;nbsp;spectroscopy revealed that the annealing process has a beneficial effect in terms of high UV absorbance and solar-blindness properties. Photoelectrical characterization demonstrated the high UV photoresponse and low dark noise of the prepared UV PD based on all-amorphous ZnO/SiC structure. Improvement of the device performances were achieved by an appropriate annealing process. After post-annealing, the thermally treated ZnO/SiC UV PD at 500&amp;nbsp;°C exhibits a high detectivity of 2.4&amp;nbsp;×&amp;nbsp;10&lt;sup&gt;12&lt;/sup&gt;&amp;nbsp;Jones, high&amp;nbsp;signal to noise ratio&amp;nbsp;of 2.64×10&lt;sup&gt;5&lt;/sup&gt;&amp;nbsp;and a giant UV–Vis&amp;nbsp;rejection ratio of 5.9&amp;nbsp;×&amp;nbsp;10&lt;sup&gt;3&lt;/sup&gt;. Therefore, the present study may provide new perspectives for fabricating ultralow dark noise solar-blind UV PD based on all-amorphous ZnO/SiC heterostructure, which promotes the development of integrated UV photonic systems based on SiC platform.
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</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">A.Zaiour</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Bentrcia Toufik</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Impact of deposition methods and doping on structural, optical and electrical properties of ZnO-Al thin films, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402619306084</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 186</style></volume><pages><style face="normal" font="default" size="100%">pp  293-299</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this work, thin films of aluminum doped ZnO (AZO) were deposited on ultrasonically cleaned&amp;nbsp;glass substrates&amp;nbsp;by&amp;nbsp;sol-gel process&amp;nbsp;using dip and spin&amp;nbsp;coating techniques. For this purpose, Zinc acetate dihydrate, aluminum nitrate nonahydrate, ethanol and mono&amp;nbsp;ethanolamine&amp;nbsp;were employed as precursor,&amp;nbsp;dopant, solvent and stabilizer, respectively.&amp;nbsp;X-ray diffraction, UV–vis,&amp;nbsp;photoluminescence, 4-point probe and Van der pauw techniques were investigated for the characterization of the prepared AZO thin films.&amp;nbsp;X-ray-analysis&amp;nbsp;revealed that all the prepared films have hexagonal&amp;nbsp;wurtzite&amp;nbsp;structure with a relative preferential orientation along the c-axis and the&amp;nbsp;lattice parameters&amp;nbsp;are close to the standard values reported in literature.&amp;nbsp;UV–vis spectroscopy&amp;nbsp;showed that the average value of the films’&amp;nbsp;transmittance&amp;nbsp;in the visible region is found to be around 85% and the gap ranges in the interval [3.15 eV–3.30 eV]. The photoluminescence spectrum only showed the UV peak while the broad band of the visible region was completely vanished. The electrical measurements indicate that sol-gel methods provide relatively high&amp;nbsp;resistivities&amp;nbsp;compared to those obtained with physical&amp;nbsp;vapor deposition&amp;nbsp;(PVD) techniques.</style></abstract></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>10</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Cellules photovoltaïques : De la couche active au panneau solaire photovoltaïque</style></title><secondary-title><style face="normal" font="default" size="100%">Journées portes ouvertes sur la Faculté des Sciences Exactes (JFSE 2017)</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://ceur-ws.org/Vol-1849/paper1.pdf</style></url></web-urls></urls><language><style face="normal" font="default" size="100%">eng</style></language></record><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Mahdjoub Abdelhakim</style></author><author><style face="normal" font="default" size="100%">Hafid Abdelaali</style></author><author><style face="normal" font="default" size="100%">Aida Mohammed Salah</style></author><author><style face="normal" font="default" size="100%">Benhaya Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">An original way to obtain porous Zn(1&amp;ndash;x)MgxO thin films by spray pyrolysis technique, ISSN 15608034</style></title><secondary-title><style face="normal" font="default" size="100%">Semiconductor Physics, Quantum Electronics &amp; Optoelectronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://pdfs.semanticscholar.org/e4f9/8d665c11b176bac026c444ba787422fcbb08.pdf?_ga=2.192392546.932043383.1582016558-1814151887.1582016558</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">volume 20</style></volume><pages><style face="normal" font="default" size="100%">pp 55-63</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">Zn(1–x)MgxO thin films with various concentrations of magnesium were deposited using the spray pyrolysis method. The transmittance spectra recorded for all films exhibit maxima exceeding 90%. The band gap energy of the films with wurtzite structure increases from 3.22 up to 3.60 eV by incorporating Mg into ZnO. However, when the atomic ratio of Mg exceeded 0.4, a second crystalline phase (assigned to cubic MgO) became discernable in XRD patterns, a compressive strain was observed in the wurtzite lattice, and crystallite sizes decreased significantly. In accordance with these observations, finer grains with a pronounced columnar growth were observed in 3D AFM representations and the surface roughness decreases significantly. Finally, selective etching in water yields to porous films with a great surface-to-volume ratio, a lower refractive index and a better light transmission. These porous films with tunable band gap seem to be excellent candidates to various interesting applications.</style></abstract><issue><style face="normal" font="default" size="100%">N°1</style></issue></record></records></xml>