<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Martin, N</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science in Semiconductor Processing </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2020</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S136980011932164X</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">110</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p id=&quot;abspara0010&quot; style=&quot;text-align: justify;&quot;&gt;
	In this paper, novel self-powered, solar-blind&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;&amp;nbsp;photodetector&amp;nbsp;(&lt;em&gt;PD&lt;/em&gt;) designs based on a&amp;nbsp;&lt;em&gt;ZnO&lt;/em&gt;&amp;nbsp;thin-film with engineered back metal layer (&lt;em&gt;BML&lt;/em&gt;) were fabricated by&amp;nbsp;&lt;em&gt;RF&lt;/em&gt;&amp;nbsp;magnetron sputtering&amp;nbsp;and e-beam evaporation techniques. An exhaustive study concerning the impact of dissimilar&amp;nbsp;&lt;em&gt;BML&lt;/em&gt;&amp;nbsp;(&lt;em&gt;Au&lt;/em&gt;&amp;nbsp;and&amp;nbsp;&lt;em&gt;Ni&lt;/em&gt;) on the device structural, optical and electrical properties was carried out. The measured&amp;nbsp;&lt;em&gt;I–V&lt;/em&gt;&amp;nbsp;curves illustrated an asymmetrical behavior, enabling a clear and distinctive&amp;nbsp;photovoltaic&amp;nbsp;mode. Superb sensitivity of&amp;nbsp;&lt;em&gt;10&lt;/em&gt;&lt;sup&gt;&lt;em&gt;7&lt;/em&gt;&lt;/sup&gt;&lt;em&gt;,&lt;/em&gt;&amp;nbsp;high&amp;nbsp;&lt;em&gt;I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;ON&lt;/em&gt;&lt;/sub&gt;&lt;em&gt;/I&lt;/em&gt;&lt;sub&gt;&lt;em&gt;OFF&lt;/em&gt;&lt;/sub&gt;&amp;nbsp;ratio of 149dB, ultralow dark-noise current less than&amp;nbsp;&lt;em&gt;11pA&lt;/em&gt;&amp;nbsp;and&amp;nbsp;responsivity&amp;nbsp;exceeding&amp;nbsp;&lt;em&gt;0.&lt;/em&gt;27A/W were reached for the prepared&amp;nbsp;&lt;em&gt;ZnO-&lt;/em&gt;based&amp;nbsp;&lt;em&gt;UV-PDs&lt;/em&gt;&amp;nbsp;in self-powered mode. The role of the engineered&amp;nbsp;&lt;em&gt;BML&lt;/em&gt;&amp;nbsp;in promoting effective separation and transfer of the photo-induced carriers was discussed using the band-diagram theory. The influence of the&amp;nbsp;annealing process&amp;nbsp;on the&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;-sensor performance was also investigated. The annealed device at&amp;nbsp;&lt;em&gt;500°C&lt;/em&gt;&amp;nbsp;demonstrated a lower dark current of a few picoamperes and a high rejection ratio of&amp;nbsp;&lt;em&gt;2.2×10&lt;/em&gt;&lt;sup&gt;&lt;em&gt;3&lt;/em&gt;&lt;/sup&gt;&lt;em&gt;,&lt;/em&gt;&amp;nbsp;emphasizing its exciting visible blindness characteristics&lt;em&gt;.&lt;/em&gt;&amp;nbsp;Therefore, the use of an engineered&amp;nbsp;&lt;em&gt;BML&lt;/em&gt;&amp;nbsp;with optimized annealing conditions open up new perspectives to realizing high-performance, self-powered solar-blind&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;-&lt;em&gt;PDs&lt;/em&gt;&amp;nbsp;based on simple thin-film&lt;em&gt;-ZnO&lt;/em&gt;&amp;nbsp;structure strongly desirable for various optoelectronic applications.
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