<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Latrous, Ahmed Redha</style></author><author><style face="normal" font="default" size="100%">R amdane Mahamdi</style></author><author><style face="normal" font="default" size="100%">Touafek, Naima</style></author><author><style face="normal" font="default" size="100%">Pasquinelli, Marcel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Conduction Band Offset Effect on the Cu2ZnSnS4 Solar Cells Performance</style></title><secondary-title><style face="normal" font="default" size="100%">Annales de Chimie - Science des Matériaux </style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://iieta.org/journals/acsm</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">45</style></volume><pages><style face="normal" font="default" size="100%">431-437 </style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2 , Voc = 0.757 V, FF = 65.6%, ɳ = 6.9%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 µm) and (ND = 1016 cm-3 ). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1%, Voc of 0.961 mV, FF of 67.3% and Jsc of 20.2 mA/cm2 .
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</style></abstract><issue><style face="normal" font="default" size="100%">6</style></issue></record></records></xml>