<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">A Saidi</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science in Semiconductor Processing</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S136980012031266X</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">121</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, a new&amp;nbsp;heterojunction&amp;nbsp;structure based on ultrathin-film&amp;nbsp;&lt;em&gt;ITO&lt;/em&gt;&amp;nbsp;sputtered on non-hydrogenated amorphous-silicon (&lt;em&gt;a-Si&lt;/em&gt;) is developed for high-detectivity solar-blind&amp;nbsp;&lt;em&gt;UV-&lt;/em&gt;photodetector&amp;nbsp;&lt;em&gt;(UV-PD)&lt;/em&gt;&amp;nbsp;based on silicon (&lt;em&gt;Si&lt;/em&gt;) photonics technology. A strategic combination of&amp;nbsp;Particle Swarm Optimization&amp;nbsp;&lt;em&gt;(PSO)&lt;/em&gt;&amp;nbsp;and numerical analysis is used to find out the best design offering superior optoelectronic performance. The&amp;nbsp;optimized design&amp;nbsp;is then elaborated using&amp;nbsp;&lt;em&gt;RF&lt;/em&gt;&amp;nbsp;magnetron sputtering&amp;nbsp;technique. A comprehensive investigation of the device structural and optoelectronic properties was carried out, incorporating the influence of heat treatment at temperature values ranging from&amp;nbsp;&lt;em&gt;300°C&lt;/em&gt;&amp;nbsp;to&amp;nbsp;&lt;em&gt;600°C&lt;/em&gt;.&amp;nbsp;&lt;em&gt;X&lt;/em&gt;-Ray Diffraction (&lt;em&gt;XRD&lt;/em&gt;) measurements indicate that the&amp;nbsp;crystallinity&amp;nbsp;of the sputtered layers was enhanced by increasing the annealing temperature. Significantly, photoelectrical characterization showed that the annealed&amp;nbsp;&lt;em&gt;ITO/a-Si UV-PD&lt;/em&gt;&amp;nbsp;exhibits high detectivity exceeding&amp;nbsp;&lt;em&gt;10&lt;/em&gt;&lt;sup&gt;&lt;em&gt;13&lt;/em&gt;&lt;/sup&gt;&amp;nbsp;Jones with a highly improved&amp;nbsp;&lt;em&gt;UV-to-Vis&lt;/em&gt;&amp;nbsp;rejection ratio of&amp;nbsp;&lt;em&gt;5.7&lt;/em&gt;&amp;nbsp;×&amp;nbsp;&lt;em&gt;10&lt;/em&gt;&lt;sup&gt;&lt;em&gt;3&lt;/em&gt;&lt;/sup&gt;. The&amp;nbsp;&lt;em&gt;ITO/a-Si&lt;/em&gt;&amp;nbsp;heterojunction generated a built-in potential, enabling effective separation and transport of photo-induced carriers, thereby reducing&amp;nbsp;recombination losses. Therefore, by well optimizing the proposed&amp;nbsp;heterostructure&amp;nbsp;and the annealing conditions, we were able to elaborate new highly detective, thin-film solar-blind&amp;nbsp;&lt;em&gt;UV-PD&lt;/em&gt;&amp;nbsp;based on&amp;nbsp;&lt;em&gt;Si&lt;/em&gt;-photonics platform, which can be a promising alternative for future high-performance and cost-effective optoelectronic systems.
&lt;/p&gt;
</style></abstract></record></records></xml>