<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Kadri, A</style></author><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Giant responsivity of a new optically controlled graphene UV-phototransistor using graded band-gap ZnMgO gate</style></title><secondary-title><style face="normal" font="default" size="100%">Sensors and Actuators A: Physical</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0924424721001643</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">325</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this work, a new Ultraviolet Optically Controlled Graphene Field-Effect Transistor (&lt;em&gt;UV-OC-GFET&lt;/em&gt;) based on Graded Band-Gap (&lt;em&gt;GBG&lt;/em&gt;)&amp;nbsp;&lt;em&gt;ZnMgO&lt;/em&gt;&amp;nbsp;photosensitive-gate is proposed. The device drain current model is numerically developed by self-consistently solving the Schrödinger/Poisson equations based on non-equilibrium Green's function (&lt;em&gt;NEGF&lt;/em&gt;) formalism. The influence of&amp;nbsp;&lt;em&gt;GBG&lt;/em&gt;&amp;nbsp;strategy with different profiles on the device sensing performances is analyzed. Our investigation reveals that the use of both&amp;nbsp;&lt;em&gt;GBG ZnMgO&lt;/em&gt;&amp;nbsp;photo-gate and graphene nanoribbon channel offers the dual-benefit of improved electric field distribution in the photosensitive layer and enhanced drain current. This leads to outperforming the device Figure of Merits (&lt;em&gt;FoMs&lt;/em&gt;). In this context, it is found that the proposed&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;&amp;nbsp;sensor with optimized band-gap profile exhibits giant responsivity exceeding&amp;nbsp;&lt;em&gt;1.5 × 10&lt;sup&gt;6&lt;/sup&gt;&lt;/em&gt;&amp;nbsp;A/W with superb detectivity of&amp;nbsp;&lt;em&gt;7 × 10&lt;sup&gt;14&lt;/sup&gt;&amp;nbsp;Jones&lt;/em&gt;, far surpassing that of the conventional&amp;nbsp;&lt;em&gt;Si&lt;/em&gt;-channel based phototransistors. Therefore, this innovative strategy based on graphene nanoribbon channel combined with&amp;nbsp;&lt;em&gt;GBG&lt;/em&gt;&amp;nbsp;sensitive-gate pinpoints a new path towards achieving high-performance visible-blind&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;-phototransistor, making it a potential alternative photoreceiver for chip-level optical communication and optoelectronic applications.
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