<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Boubiche, N</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author><author><style face="normal" font="default" size="100%">Faerber, J</style></author><author><style face="normal" font="default" size="100%">Le Normand, F,</style></author><author><style face="normal" font="default" size="100%">Javahiraly, N</style></author><author><style face="normal" font="default" size="100%">Fix, T</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Absorption enhancement in amorphous Si by introducing RF sputtered Tiintermediate layers for photovoltaic applications</style></title><secondary-title><style face="normal" font="default" size="100%">Materials Science and Engineering: B</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2021</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0921510721001124</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">269</style></volume><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	In this paper, embedded amorphous-silicon (&lt;em&gt;a-Si&lt;/em&gt;) and titanium (&lt;em&gt;Ti&lt;/em&gt;) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (&lt;em&gt;TFSCs&lt;/em&gt;). Promising design strategy based on combining&amp;nbsp;&lt;em&gt;FDTD&lt;/em&gt;&amp;nbsp;(&lt;em&gt;finite difference time domain&lt;/em&gt;) with particle swarm optimization (&lt;em&gt;PSO&lt;/em&gt;) was adopted to identify the&amp;nbsp;&lt;em&gt;a-Si/Ti&lt;/em&gt;&amp;nbsp;multilayer structure offering the highest total absorbance efficiency (&lt;em&gt;TAE&lt;/em&gt;). It is found that the proposed multilayer structure can serve as an effective absorber, yielding superb&amp;nbsp;&lt;em&gt;TAE&lt;/em&gt;&amp;nbsp;exceeding&amp;nbsp;&lt;em&gt;80%&lt;/em&gt;. The&amp;nbsp;&lt;em&gt;a-Si/Ti&lt;/em&gt;&amp;nbsp;multilayer was then elaborated by successive growth of&amp;nbsp;&lt;em&gt;a-Si&lt;/em&gt;&amp;nbsp;and&amp;nbsp;&lt;em&gt;Ti&lt;/em&gt;&amp;nbsp;ultrathin layers using&amp;nbsp;&lt;em&gt;RF&lt;/em&gt;&amp;nbsp;magnetron sputtering technique. The sputtered&amp;nbsp;&lt;em&gt;a-Si/Ti&lt;/em&gt;&amp;nbsp;thin-film was characterized by scanning electron microscopy (&lt;em&gt;SEM&lt;/em&gt;),&amp;nbsp;&lt;em&gt;X&lt;/em&gt;-ray diffraction (&lt;em&gt;XRD&lt;/em&gt;), and&amp;nbsp;&lt;em&gt;UV&lt;/em&gt;–visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even&amp;nbsp;&lt;em&gt;NIR&lt;/em&gt;&amp;nbsp;spectrum ranges. In particular, the prepared&amp;nbsp;&lt;em&gt;a-Si/Ti&lt;/em&gt;&amp;nbsp;absorber exhibits an optical band-gap of&amp;nbsp;&lt;em&gt;1.36&amp;nbsp;eV&lt;/em&gt;, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting&amp;nbsp;&lt;em&gt;I-V&lt;/em&gt;&amp;nbsp;characteristics and electrical parameters under dark and&amp;nbsp;&lt;em&gt;1-sun&lt;/em&gt;&amp;nbsp;illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized&amp;nbsp;&lt;em&gt;a-Si/Ti&lt;/em&gt;&amp;nbsp;multilayer provides a sound pathway for designing promising alternative absorbers for the future development of&amp;nbsp;&lt;em&gt;a-Si&lt;/em&gt;-based&amp;nbsp;&lt;em&gt;TFSCs&lt;/em&gt;.
&lt;/p&gt;
</style></abstract></record></records></xml>