<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Toufik Bentrcia</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Arar,  Djemai</style></author><author><style face="normal" font="default" size="100%">Mohamed Meguellati</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642</style></title><secondary-title><style face="normal" font="default" size="100%">Physica Status Solidi © Current Topics in Solid State Physics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.researchgate.net/publication/298899546_Numerical_investigation_of_nanoscale_double-gate_junctionless_MOSFET_with_drain_and_source_extensions_including_interfacial_defects</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">13</style></volume><pages><style face="normal" font="default" size="100%">151-155</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. (© 2016 WILEY-VCH Verlag GmbH &amp;amp; Co. KGaA, Weinheim)
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