<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Hichem Ferhati</style></author><author><style face="normal" font="default" size="100%">Fayçal Djeffal</style></author><author><style face="normal" font="default" size="100%">Kalinka Kacha</style></author><author><style face="normal" font="default" size="100%">Bendjerad, Adel</style></author><author><style face="normal" font="default" size="100%">Benhaya, Abdelhamid</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Influence of TCO intermediate thin-layers on the electrical and thermal properties of metal/TCO/p-Si Schottky structure fabricated via RF magnetron sputtering</style></title><secondary-title><style face="normal" font="default" size="100%">Physica E: Low-dimensional Systems and Nanostructures</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/pii/S1386947718313754</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">106</style></volume><pages><style face="normal" font="default" size="100%">25-30</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, versatile&amp;nbsp;&lt;em&gt;Metal/TCO/p-Si&lt;/em&gt;&amp;nbsp;Schottky Barrier&amp;nbsp;Diodes (&lt;em&gt;SBDs&lt;/em&gt;) with dissimilar&amp;nbsp;&lt;em&gt;TCO&lt;/em&gt;&amp;nbsp;intermediate layers (&lt;em&gt;ZnO&lt;/em&gt;&amp;nbsp;and&amp;nbsp;&lt;em&gt;ITO&lt;/em&gt;) were fabricated by&amp;nbsp;&lt;em&gt;RF&lt;/em&gt;&amp;nbsp;magnetron sputtering&amp;nbsp;technique. An overall electrical performance comparison between the&amp;nbsp;&lt;em&gt;Al/ZnO/p-Si, Au/ITO/p-Si&lt;/em&gt;&amp;nbsp;and the conventional&amp;nbsp;&lt;em&gt;Au/p-Si&lt;/em&gt;&amp;nbsp;structures is carried out. The measured&amp;nbsp;&lt;em&gt;I-V&lt;/em&gt;&amp;nbsp;characteristics indicate that the proposed&amp;nbsp;&lt;em&gt;Al/ZnO/p-Si&lt;/em&gt;&amp;nbsp;design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (&lt;em&gt;SBH&lt;/em&gt;) of&amp;nbsp;&lt;em&gt;0.&lt;/em&gt;75 V and close to unite ideality factor (&lt;em&gt;n&lt;/em&gt; = &lt;em&gt;1.23&lt;/em&gt;). Such behavior can be attributed to the enhanced interface quality achieved by introducing&amp;nbsp;&lt;em&gt;TCO&lt;/em&gt;&amp;nbsp;inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (&lt;em&gt;FoM&lt;/em&gt;) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with&amp;nbsp;&lt;em&gt;ITO&lt;/em&gt;&amp;nbsp;and&amp;nbsp;&lt;em&gt;ZnO&lt;/em&gt;&amp;nbsp;sub-layers exhibits improved&amp;nbsp;&lt;em&gt;FoM&lt;/em&gt;&amp;nbsp;parameters as compared to the conventional&amp;nbsp;&lt;em&gt;Au/p-Si&lt;/em&gt;&amp;nbsp;structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the&amp;nbsp;&lt;em&gt;Si&lt;/em&gt;-based&amp;nbsp;&lt;em&gt;SBDs&lt;/em&gt;&amp;nbsp;design tradeoffs. It is demonstrated that the insertion of a&amp;nbsp;&lt;em&gt;TCO&lt;/em&gt;&amp;nbsp;inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.</style></abstract></record></records></xml>