<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Rechem Djamil</style></author><author><style face="normal" font="default" size="100%">Khial Aicha</style></author><author><style face="normal" font="default" size="100%">Azizi Cherifa</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, ISSN 1569-8025</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Computational Electronics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2016</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://link.springer.com/article/10.1007/s10825-016-0901-7</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 15</style></volume><pages><style face="normal" font="default" size="100%">pp 1308-1315</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green’s function formalism performed with the self-consistent solution of the Poisson and Schrödinger equations. The device performance is investigated in terms of leakage current, on-state current, &lt;span class=&quot;mathjax-tex&quot;&gt;&lt;span class=&quot;MathJax&quot; data-mathml=&quot;&lt;math xmlns=&amp;quot;http://www.w3.org/1998/Math/MathML&amp;quot;&gt;&lt;msub&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mi mathvariant=&amp;quot;normal&amp;quot;&gt;O&lt;/mi&gt;&lt;mi mathvariant=&amp;quot;normal&amp;quot;&gt;N&lt;/mi&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mo&gt;/&lt;/mo&gt;&lt;/mrow&gt;&lt;msub&gt;&lt;mi&gt;I&lt;/mi&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mrow class=&amp;quot;MJX-TeXAtom-ORD&amp;quot;&gt;&lt;mi mathvariant=&amp;quot;normal&amp;quot;&gt;O&lt;/mi&gt;&lt;mi mathvariant=&amp;quot;normal&amp;quot;&gt;F&lt;/mi&gt;&lt;mi mathvariant=&amp;quot;normal&amp;quot;&gt;F&lt;/mi&gt;&lt;/mrow&gt;&lt;/mrow&gt;&lt;/msub&gt;&lt;/math&gt;&quot; id=&quot;MathJax-Element-1-Frame&quot; role=&quot;presentation&quot; style=&quot;position:relative;&quot; tabindex=&quot;0&quot;&gt;&lt;nobr aria-hidden=&quot;true&quot;&gt;&lt;span class=&quot;math&quot; id=&quot;MathJax-Span-1&quot; style=&quot;width:4.557em;display:inline-block;&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:4.104em;height:0px;111%;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(1.252em,1004.1em,2.552em,-1000em);top:-2.152em;left:0em;&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-2&quot;&gt;&lt;span class=&quot;msubsup&quot; id=&quot;MathJax-Span-3&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:1.595em;height:0px;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(3.171em,1000.5em,4.154em,-1000em);top:-4.004em;left:0em;&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-4&quot; style=&quot;MathJax_Math;font-style:italic;&quot;&gt;I&lt;/span&gt;&lt;/span&gt;&lt;span style=&quot;position:absolute;top:-3.85em;left:0.44em;&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-5&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-6&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-7&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-8&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-9&quot; style=&quot;70.7%;MathJax_Main;&quot;&gt;O&lt;/span&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-10&quot; style=&quot;70.7%;MathJax_Main;&quot;&gt;N&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-11&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-12&quot;&gt;&lt;span class=&quot;mo&quot; id=&quot;MathJax-Span-13&quot; style=&quot;MathJax_Main;&quot;&gt;/&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;span class=&quot;msubsup&quot; id=&quot;MathJax-Span-14&quot;&gt;&lt;span style=&quot;display:inline-block;position:relative;width:1.989em;height:0px;&quot;&gt;&lt;span style=&quot;position:absolute;clip:rect(3.171em,1000.5em,4.154em,-1000em);top:-4.004em;left:0em;&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-15&quot; style=&quot;MathJax_Math;font-style:italic;&quot;&gt;I&lt;/span&gt;&lt;/span&gt;&lt;span style=&quot;position:absolute;top:-3.85em;left:0.44em;&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-16&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-17&quot;&gt;&lt;span class=&quot;texatom&quot; id=&quot;MathJax-Span-18&quot;&gt;&lt;span class=&quot;mrow&quot; id=&quot;MathJax-Span-19&quot;&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-20&quot; style=&quot;70.7%;MathJax_Main;&quot;&gt;O&lt;/span&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-21&quot; style=&quot;70.7%;MathJax_Main;&quot;&gt;F&lt;/span&gt;&lt;span class=&quot;mi&quot; id=&quot;MathJax-Span-22&quot; style=&quot;70.7%;MathJax_Main;&quot;&gt;F&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;/nobr&gt;&lt;/span&gt;&lt;/span&gt; current ratio, subthreshold slope, drain-induced barrier lowering, as well as transconductance, drain conductance, and intrinsic gate delay. This study is carried out over a wide range of dielectric permittivities at low temperatures ranging from room temperature down to 100&amp;nbsp;K.</style></abstract></record></records></xml>