<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Novel high-performance SOI junctionless FET-based phototransistor using channel doping engineering: Numerical investigation and sensitivity analysis, ISSN 0030-4026</style></title><secondary-title><style face="normal" font="default" size="100%">Optik</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2017</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://www.sciencedirect.com/science/article/abs/pii/S0030402617303376</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 138</style></volume><pages><style face="normal" font="default" size="100%">pp 119–126</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, graded channel doping (&lt;em&gt;GCD&lt;/em&gt;&lt;span&gt;) and junctionless paradigms are proposed as a new ways to improve the optical controlled &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/field-effect-transistor&quot; title=&quot;Learn more about Field-Effect Transistor from ScienceDirect's AI-generated Topic Pages&quot;&gt;field effect transistor&lt;/a&gt; (&lt;/span&gt;&lt;em&gt;OCFET&lt;/em&gt;&lt;span&gt;) and bridging the gap between the high &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/responsivity&quot; title=&quot;Learn more about Responsivity from ScienceDirect's AI-generated Topic Pages&quot;&gt;responsivity&lt;/a&gt;&lt;span&gt; and ultra-low &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/electric-power-utilization&quot; title=&quot;Learn more about Electric Power Utilization from ScienceDirect's AI-generated Topic Pages&quot;&gt;power consumption&lt;/a&gt;. A careful mechanism study based on numerical investigation and a performance comparison between the proposed structure and both the conventional inversion mode (&lt;/span&gt;&lt;/span&gt;&lt;em&gt;IM-OCFET&lt;/em&gt;) and the junctionless (&lt;em&gt;JL-OCFET&lt;/em&gt;&lt;span&gt;) designs is presented. It is found that the graded channel doping feature can efficiently improve the overall &lt;a href=&quot;https://www.sciencedirect.com/topics/physics-and-astronomy/optical-device&quot; title=&quot;Learn more about Optical Device from ScienceDirect's AI-generated Topic Pages&quot;&gt;device optical&lt;/a&gt; and electrical performances. Moreover, the proposed design exhibits superior device figures of merit (&lt;/span&gt;&lt;em&gt;FoMs&lt;/em&gt;) and provides ultra-sensitivity behavior as compared to both the conventional &lt;em&gt;IM-OCFET&lt;/em&gt; and the &lt;em&gt;JL-OCFET&lt;/em&gt;&lt;span&gt; counterparts. Our investigation reveals also the outstanding capability of the proposed structure for offering the weak signal detection advantage that demonstrates the unique property of our &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/phototransistor&quot; title=&quot;Learn more about Phototransistor from ScienceDirect's AI-generated Topic Pages&quot;&gt;phototransistor&lt;/a&gt; with &lt;/span&gt;&lt;em&gt;GCD&lt;/em&gt;&lt;span&gt;&lt;span&gt; aspect. These characteristics not only underline the excellent switching behavior of the proposed design but also demonstrate the ability for overcoming the trade-off between the low cost and readily &lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/fabrication-process&quot; title=&quot;Learn more about Fabrication Process from ScienceDirect's AI-generated Topic Pages&quot;&gt;fabrication process&lt;/a&gt; in addition to ultrasensitive aspect with &lt;/span&gt;&lt;a href=&quot;https://www.sciencedirect.com/topics/engineering/low-power-consumption&quot; title=&quot;Learn more about Low Power Consumption from ScienceDirect's AI-generated Topic Pages&quot;&gt;low power consumption&lt;/a&gt;. This makes the proposed &lt;/span&gt;&lt;em&gt;GCD-JL-OCFET&lt;/em&gt; a potential alternative for developing low power communication systems.</style></abstract></record></records></xml>