<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">Ferhati Hichem</style></author><author><style face="normal" font="default" size="100%">Djeffal Fayçal</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Boosting the optical performance and commutation speed of phototransistor using SiGe/Si/Ge tunneling structure, ISSN / e-ISSN 2053-1591 / 2053-1591</style></title><secondary-title><style face="normal" font="default" size="100%"> Materials Research Express</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2018</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">https://iopscience.iop.org/article/10.1088/2053-1591/aac756/meta</style></url></web-urls></urls><volume><style face="normal" font="default" size="100%">Volume 5</style></volume><pages><style face="normal" font="default" size="100%">pp 065902</style></pages><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">In this paper, a new optically controlled tunneling field effect transistor (&lt;i&gt;OC-TFET&lt;/i&gt;) based on &lt;i&gt;SiGe&lt;/i&gt;/&lt;i&gt;Si&lt;/i&gt;/&lt;i&gt;Ge&lt;/i&gt; hetero-channel is proposed to improve optical commutation speed and reduce power consumption. An exhaustive study of the device switching behavior associated with different hetero-channel structures has been carried out using an accurate numerical simulation. Moreover, a new figure of Merit (&lt;i&gt;FoM&lt;/i&gt;) parameter called optical swing factor that describes the phototransistor optical commutation speed is proposed. We demonstrate that the band-to-band tunneling effect can be beneficial for improving the device optical commutation speed. The impact of the &lt;i&gt;Ge&lt;/i&gt; mole fraction of the &lt;i&gt;SiGe&lt;/i&gt; source region on the device &lt;i&gt;FoMs&lt;/i&gt; is investigated. It is found that the optimized design with 40% of &lt;i&gt;Ge&lt;/i&gt; content offers the opportunity to overcome the trade-off between ultrafast and very sensitive photoreceiver performance, where it yields 48 mV/dec of optical swing factor and 155 dB of &lt;i&gt;I&lt;/i&gt; &lt;sub&gt; &lt;i&gt;ON&lt;/i&gt; &lt;/sub&gt;/&lt;i&gt;I&lt;/i&gt; &lt;sub&gt; &lt;i&gt;OFF&lt;/i&gt; &lt;/sub&gt; ratio. An overall performance comparison between the proposed &lt;i&gt;OC-TFET&lt;/i&gt; device and the conventional designs is performed, where the proposed structure ensures high optical detectivity for very low optical powers (&lt;i&gt;sub-&lt;/i&gt;1&lt;i&gt;pW&lt;/i&gt;) as compared to that of the conventional counterparts. Therefore, the proposed &lt;i&gt;OC-TFET&lt;/i&gt; provides the possibility for bridging the gap between improved optical commutation speed and reduced power consumption, which makes it a potential alternative for high-performance inter-chip data communication applications.</style></abstract><issue><style face="normal" font="default" size="100%"> N° 6</style></issue></record></records></xml>