@article {6793,
	title = {Highly efficient ACdTS kesterite solar cell based on a new photovoltaic material},
	journal = {Journal of Physics and Chemistry of Solids},
	volume = {161},
	year = {2021},
	abstract = {
	The\&nbsp;quasiparticle\&nbsp;band structures and optical properties of ACdTS kesterite are investigated here on the basis of first-principles calculations, including the many-body effects theory, by using the GW plus Bethe-Salpeter equation. There were significant GW-quasiparticle corrections, over 0.9\&nbsp;eV, to the GGA-Kohn-Sham band gap. Our calculations also show that ACdTS kesterite had a small binding energy, exhibited\&nbsp;optical absorption\&nbsp;in the visible region, high minority\&nbsp;carrier mobility, and large diffusion in length, rendering this material a promising candidate for solar cells. Based on these findings, we designed and implemented an ACdTS absorber in a thin-film solar cell (TFSC) structure. The new kesterite solar cell has a high efficiency of 11.6\% with a low deficit in the output voltage. Moreover, a strategic combination between the\&nbsp;particle swarm optimization\&nbsp;approach and the ACdTS TFSC decorated with periodic nanowires is proposed to obtain significantly improved\&nbsp;photovoltaic\&nbsp;characteristics. The optimized design identifies a new pathway for a high conversion efficiency of 14\%, far surpassing that provided by the conventional TFSC kesterite.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0022369721005242},
	author = {Ramadan, F.Z and Fay{\c c}al Djeffal and Drissi, Lalla Btissam and Saidi, S and Hichem Ferhati}
}
@article {6785,
	title = {Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite},
	journal = {Journal of Alloys and Compounds },
	volume = {859},
	year = {2021},
	abstract = {
	Cost-effective multispectral\&nbsp;photodetectors\&nbsp;(PDs) exhibiting a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse offer an avenue for developing environmental monitoring devices, imaging sensors, object discrimination, and optical links. However,\&nbsp;PDs\&nbsp;based on a single semiconductor as light-sensitive layer are unable to provide broadband photodetection properties. In this work, a new\&nbsp;PD\&nbsp;device based on\&nbsp;ZnO-ZnS\&nbsp;Microstructured Composite (MC) which achieves a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse is demonstrated. The\&nbsp;ZnO-ZnS MC\&nbsp;is elaborated by combining vacuum thermal evaporation technique and a suitable annealing process. Scanning Electron Microscopy (SEM), energy-dispersive\&nbsp;X-ray spectroscopy (EDS),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV-Vis-NIR\&nbsp;spectroscopy were used to elucidate the morphological, structural and optical properties of the prepared sample. It was demonstrated that the\&nbsp;ZnO-ZnS MC\&nbsp;can be useful to enhance the visible absorbance efficiency by promoting efficient light-scattering effects. It is revealed that the prepared\&nbsp;UV-Vis-NIR PD\&nbsp;offers a low dark current of\&nbsp;5\&nbsp;nA, a high\&nbsp;ION/IOFF\&nbsp;ratio of\&nbsp;78\&nbsp;dB\&nbsp;and an enhanced responsivity in\&nbsp;UV, visible and\&nbsp;NIR\&nbsp;ranges. The proposed multispectral\&nbsp;PD\&nbsp;demonstrates a high\&nbsp;ION/IOFF\&nbsp;current ratio under self-powered working regime. Therefore, the proposed\&nbsp;ZnO-ZnS MC\&nbsp;is believed to provide new insights in developing efficient, self-powered and low-cost multispectral\&nbsp;PDs\&nbsp;for high-performance optoelectronic systems.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838820346053},
	author = {Benyahia, Kaddour and Fay{\c c}al Djeffal and Hichem Ferhati and Bendjerad, Adel and Benhaya Abdelhamid and A Saidi}
}
@article {6784,
	title = {Inverted HTS rectangular patch antennas: Theoretical investigation},
	journal = {Physica C: Superconductivity and its Applications},
	volume = {580},
	year = {2021},
	abstract = {
	In this paper, we propose a full-wave analysis for characterizing the resonant frequencies and bandwidths of high-temperature superconductor inverted microstrip printed on anisotropic substrates. Our proposed approach is based on Galerkin procedure in the Fourier transform domain (FTD) combining with the complex resistive boundary condition. With the use of suitable Green{\textquoteright}s functions in the FTD, the analysis is performed for the case where the superconducting rectangular patches printed on anisotropic substrate. The numerical results obtained using the proposed approach are compared with previously published numerical results computed by means of the electromagnetic simulator {\textquotedblleft}IE3D software{\textquotedblright}. These comparisons were very good, which prove the correctness and the validity of the proposed method. It is found that the optical properties combined with optimally chosen structural parameters of anisotropic materials can be maintaining control of the resonant frequency and exhibiting wider bandwidth characteristics.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921453420304007},
	author = {Bedra, Sami and Benkouda , Siham and Bedra , Randa and Fortaki , Tarek}
}
@article {6783,
	title = {Characteristics of HTS inverted circular patches on anisotropic substrates},
	journal = {Journal of Computational Electronics },
	volume = {20},
	year = {2021},
	pages = {892{\textendash}899},
	abstract = {
	In this study, an efficient full-wave method is developed for characterizing the resonant frequencies, bandwidths, and quality factors of an inverted circular superconducting patch antenna. Our technique is based on the Galerkin procedure in the Hankel transform domain (HTD) combined with the complex resistive boundary conditions. With the use of suitable Green{\textquoteright}s functions in the HTD, the analysis is performed for the case where the superconducting circular patches is printed on an anisotropic substrate. The numerical results obtained using this approach are compared with the experimental results. These comparisons were very good, which proves the correctness and the validity of the method. It is found that the optical properties combined with optimally-chosen structural parameters of anisotropic materials can maintain control of the resonant frequency and exhibit wider bandwidth characteristics.

},
	url = {https://link.springer.com/article/10.1007/s10825-020-01596-1},
	author = {Bedra, Sami and Benkouda , Siham and Bedra , Randa and Fortaki , Tarek}
}
@article {6782,
	title = {Resonant Frequency and Bandwidth of Superconducting Microstrip Antenna Fed through a Slot Cut into the Ground Plane},
	journal = {Electronics},
	volume = {10},
	number = {2},
	year = {2021},
	pages = {147},
	abstract = {
	In this work, an efficient analysis is presented to accurately predict the resonant frequency and bandwidth of superconducting microstrip antenna fed through a slot cut into the ground plane. The effect of the superconductivity of the rectangular patch is introduced in the Full-wave analysis based on Gorter-Casimir two fluid model together with London brothers equations. In order to check the accuracy of the proposed approach, the obtained results have been compared with theoretical and experimental data reported in the literature. Finally, the influence of the slot on the resonant frequency and half-power bandwidth of the superconducting antenna has been investigated.\&nbsp;

},
	url = {https://www.mdpi.com/2079-9292/10/2/147},
	author = {Mahamdi , Ahmed and Benkouda , Siham and Aris, Skander and Denidni, Tayeb A}
}
@inbook {6781,
	title = {Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System},
	booktitle = {Electrical and Electronic Devices, Circuits, and Materials: Technological Challenges and Solutions},
	year = {2021},
	abstract = {
	This chapter focuses on double gate (DG) Tunneling Field Effect Transistor (TFET), having band engineering and high - k dielectrics. The basic structure of TFET device is derived and developed by p-i-n diode, containing two heavily doped degenerated semiconductor {\textquotedblleft}p{\textquotedblright} and {\textquotedblleft}n{\textquotedblright} regions and lightly doped intrinsic {\textquotedblleft}i{\textquotedblright} region, respectively. The chapter explores the idea of high-k dielectric engineering as well as band engineering concept with DG -TFET. TFET is a type of field effect device in which current transport phenomena occur due to quantum tunneling between source and channel. The estimation of device characteristics and performance of TFET is time consuming and costly due to lack of rapid advancement in technology. TFET devices have become the most popular switching device among semiconductor players. The chapter summarizes the obtained results by popular device analysis technique, modeling and simulation of DG -TFET.

},
	url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/9781119755104.ch2},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi}
}
@proceedings {6780,
	title = {Germanium \&ndash; InGaZnO heterostructured thinfilm phototransistor with high IR photoresponse},
	journal = {International Conference on SMACD and 16th Conference on PRIME},
	year = {2021},
	address = {online},
	abstract = {
	In this paper, the role of introducing Germanium (Ge)/IGZO heterostructure in enhancing the Infrared (IR) photodetection properties of thin-film phototransistor (Photo- TFT) is presented. Numerical models for the investigated device are developed using ATLAS device simulator. The influence of Ge photosensitive layer thickness on the sensor IR photoresponse is carried out. It is revealed that the optimized IR Photo-TFT based on p-Ge/IGZO heterojunction can offer improved IR responsivity of 4.1{\texttimes}10(exp2) A/W, and over 10(exp6) of sensitivity. These improvements are attributed to the role of the introduced p-Ge/IGZO heterostructure in promoting IR photodetection ability and improved separation and transfer mechanisms of photo-exited electron/hole pairs. The photosensor is then implemented in an optical inverter gate circuit in order to assess its switching capabilities. It is found that the proposed phototransistor shows an improved optical gain thus indicating its excellent performance. Therefore, providing high IR responsivity and low dark noise effects, the optimized Ge/IGZO IR Photo-TFT can be a potential alternative photosensor for designing optoelectronic systems with high-performance and ultralow power consumption.

},
	url = {https://ieeexplore.ieee.org/abstract/document/9547977},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel}
}
@proceedings {6779,
	title = {Performance assessment of a new low-cost RF sputtered Schottky diode based on a-Si/Ti structure},
	journal = {International Conference on SMACD and 16th Conference on PRIME},
	year = {2021},
	address = {online},
	abstract = {
	In this paper, a new efficient and low-cost Schottky Diode (SD) based on a-Si/Ti structure was elaborated using RF magnetron sputtering technique. An exhaustive investigation of structural and electrical properties was performed, where the sputtered device was characterized using X-ray diffraction (XRD) and Keithley (4200-SCS) to measure the current-voltage characteristics. Moreover, a comprehensive study regarding the impact of the Ti layers on the device characteristics is carried out. It was demonstrated that implementing Ti intermediate layers could induce depletion regions at the interfaces, leading to significantly enlarged voltage barrier height. Furthermore, the elaborated SD exhibits a rectification behavior providing an appropriate current with a favorable ideality factor. This is mainly due to the reduced series resistance of the multilayer structure as confirmed by electrical analysis. Therefore, the proposed SD structure based on Ti intermediate layers provides improved performance and can open a new route for the fabrication of promising alternative devices for microelectronic and sensing applications.

},
	url = {https://ieeexplore.ieee.org/abstract/document/9548000},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and Benhaya Abdelhamid}
}
@article {6778,
	title = {Impact of Dielectric Engineering on Analog/RF and Linearity Performance of Double Gate Tunnel FET},
	journal = {International Journal of Nanoelectronics and Materials},
	year = {2021},
	abstract = {
	Tunnel FETisone of thealternativedevicefor low power electronics having steep subthreshold swing and lower leakage current than conventional MOSFET. In this research work, we have implemented the idea of high -k gate dielectric ondouble gate Tunnel FET, DG-TFETfor improvement of device features.An extensive investigation for the analog/RF and linearity feature of DG-TFET has been donehere for low power circuit and system development.Several essential analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS) its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain band width product (GBW), transconductance generation factor (gm/IDS) has been investigated for low power RF applications.The VIP2, VIP3, IMD3, IIP3, distortion characteristics (HD2, HD3), 1- dB the compression point, delay and power delay product performancehave also been throughly studied.It has been observed that the device features discussed for circuitry applications are found to be sensitiveto of gate materials, design configuration and input signals.

},
	url = {https://ijneam.unimap.edu.my/images/PDF/ijneam\%20july\%202021\%20pdf/IJNEAM2021012\%20Accepted.pdf},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi and Boussahla, G}
}
@article {6777,
	title = {Low Power Circuit and System Design Hierarchy and Thermal Reliability of Tunnel Field Effect Transistor},
	journal = {Silicon },
	volume = {14},
	year = {2021},
	pages = {3233{\textendash}3243},
	abstract = {
	Tunnel FET is one of the promising devices advocated as a replacement of conventional MOSFET to be used for low power applications. Temperature is an important factor affecting the performance of circuits or system, so temperature associated reliability issues of double gate Tunnel FET and its impact on essential circuit design components have been addressed here. The temperature reliability investigation is based on double gate Tunnel FET, containing Si1-xGe\&nbsp;x\&nbsp;/Si, source/channel and HfO2\&nbsp;high-k gate dielectric material. During investigation, it has been found that at high temperature application range ~ 300\&nbsp;K - to - 600\&nbsp;K,the Tunnel FET device design parameters exhibit weak temperature dependency with switching current (ION), while the off-state current (IOFF) is slightly varying ~10-17A/μm-to-10-10A/μm. In addition, the impact of temperature on various device design element such as VTH(i.e.,switching voltage),on-current (ION), off-current (IOFF), switching ratio (ION/IOFF) and average subthreshold slope (i.e., SSavg), ambipolar current (IAMB) have been done in this research work.The essential circuit design components for digital and analog/RF applications, such as current amplification factor(gm)\&nbsp;and its derivative (gm{\textquoteright}),the C-V components of device design, Cgg, Cgd and Cgs, cut - off frequency ({\textflorin}T) and gain band width (GBW) product have deeply investigated. In conclusion, the obtained results show that the designed double gate Tunnel FET device configuration and its circuit design components are suitable for ultra-low power circuit,system applications and reliable for hazardous temperature environment.

},
	url = {https://link.springer.com/article/10.1007/s12633-021-01088-2},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi}
}
@article {6776,
	title = {Performance Enhancement in CZTS Solar Cells by SCAPS-1D},
	journal = {International Journal of Thin Film Science and Technology},
	volume = {10},
	number = {2},
	year = {2021},
	abstract = {
	The development of CZTS-based solar cells is limited by two factors, the low open circuit voltage and the conversion efficiency. This is why, in this study, the impact of Cu2ZnSnS4 (CZTS) absorber thin layer parameters on the performance of the proposed MoS2/CZTS/CdS/ZnO heterostructure is simulated by the standard software SCAPS-1D. The improving output performances of this structure; the open circuit voltage (Voc), the short circuit current density (Jsc), the fill factor (FF) and the efficiency (h) are obtained by varying the absorber layer thickness, acceptor carrier concentration NA and taking into account the effect of the electron work function of the back metal contact. The optimized cell provides an energy conversion efficiency of 15.23\% (Voc = 0.99 V, Jsc = 21.89 mA/cm2, FF = 69.79\%) for an optimal thickness of 2 μm, a doping of 1{\texttimes}1016 cm-3. Performance enhancement of the proposed solar cell is subject to the back metal contact, the optimal simulated value of 5.7 eV of which represents that of the Platinum{\textquoteright}s work function Pt. The interest of this simulation makes it possible to adjust the solar cells dimensions, optimize the absorbent layers doping, choose appropriately the back metal contact and therefore help to considerably reduce the various recombination phenomena as well as the secondary phases.

},
	url = {https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss2/1/},
	author = {Latrous, Ahmed Redha and R amdane Mahamdi and Touafek, Naima and Pasquinelli, Marcel}
}
@article {6775,
	title = {Conduction Band Offset Effect on the Cu2ZnSnS4 Solar Cells Performance},
	journal = {Annales de Chimie - Science des Mat{\'e}riaux },
	volume = {45},
	number = {6},
	year = {2021},
	pages = {431-437 },
	abstract = {
	Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2 , Voc = 0.757 V, FF = 65.6\%, ɳ = 6.9\%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 {\textmu}m) and (ND = 1016 cm-3 ). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1\%, Voc of 0.961 mV, FF of 67.3\% and Jsc of 20.2 mA/cm2 .

},
	url = {http://iieta.org/journals/acsm},
	author = {Latrous, Ahmed Redha and R amdane Mahamdi and Touafek, Naima and Pasquinelli, Marcel}
}
@article {6774,
	title = {Boosting the performance of planar inverted perovskite solar cells employing graphene oxide as HTL},
	journal = {Digest Journal of Nanomaterials and Biostructures },
	volume = {16},
	number = {2},
	year = {2021},
	pages = {705 - 712},
	abstract = {
	The numerical simulation tool SCAPS-1D was used to analyze perovskite solar cell having the architecture ITO/ PEDOT:PSS or GO /CH3NH3PbI3-xClx/ PCBM /Au contains inverted planar hetero-junction device. In this work, we investigated the effect of inserting the Graphene Oxide (GO) as Hole Transport layer (HTL) on the performance of perovskite solar cells. Simulation results show that the use of GO as a hole transport layer is efficient. The efficiency of PSCs based on GO HTL was increased by about 1.6 \% compared to the conventional PEDOT:PSS HTL device. The obtained results of optimizing the thickness of GO HTL exhibited an optimum value around 10 nm with an efficiency of 12.35 \%, Voc of 1.19 V and FF of 54.8 \%. We have also shown that the performance of device for high GO carrier density is a better than with low ones. In addition, increasing the temperature beyond the optimum value obtained around 320 K for both HTL materials (GO and PEDOT:PSS) has detrimental effect on the performance of the perovskite solar cells however the device is more sensitive to the temperature with PEDOT:PSS than the GO ones. The effect of band gap of GO on the performance of device is also studied. The obtained results underline the determining role playedby this parameter with an optimum value around 3.25 eV.

},
	url = {https://chalcogen.ro/705_TouafekN.pdf},
	author = {Touafek, Naima and R amdane Mahamdi and Dridi, Chahrazed}
}
@article {6773,
	title = {Impact of Cathodic Potential on the Growth Mechanisms and Morphology of Ni\&ndash;P Alloys Using Electrodeposition Technique},
	journal = {Transactions on Electrical and Electronic Materials },
	volume = {23},
	year = {2021},
	pages = {52{\textendash}63},
	abstract = {
	Phosphorus nickel alloy, intended for anticorrosion coating, was prepared and deposited at room temperature on copper substrate by chronoamperometry technique in a sulphate bath. The effect of potential on the chemical composition, nucleation and growth, the structure and surface morphology during the electrodeposition of this alloy was presented in this work. X-ray microanalysis showed that the content of phosphorus in the prepared alloys decreases with increasing cathodic potential. Chronoamperograms analysis indicated that the nucleation process is instantaneous and of three-dimensional (3D) growth and is controlled by kinetics. X-ray diffraction analysis revealed an amorphous structure while SEM images showed a smooth appearance with pore presence.

},
	url = {https://link.springer.com/article/10.1007/s42341-021-00318-z},
	author = {Benyekken, C and Benhaya, Abdelhamid and Fay{\c c}al Djeffal and Chahdi, M}
}
@article {6772,
	title = {Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology},
	journal = {Materials Science in Semiconductor Processing},
	volume = {121},
	year = {2021},
	abstract = {In this paper, a new\&nbsp;heterojunction\&nbsp;structure based on ultrathin-film\&nbsp;ITO\&nbsp;sputtered on non-hydrogenated amorphous-silicon (a-Si) is developed for high-detectivity solar-blind\&nbsp;UV-photodetector\&nbsp;(UV-PD)\&nbsp;based on silicon (Si) photonics technology. A strategic combination of\&nbsp;Particle Swarm Optimization\&nbsp;(PSO)\&nbsp;and numerical analysis is used to find out the best design offering superior optoelectronic performance. The\&nbsp;optimized design\&nbsp;is then elaborated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. A comprehensive investigation of the device structural and optoelectronic properties was carried out, incorporating the influence of heat treatment at temperature values ranging from\&nbsp;300{\textdegree}C\&nbsp;to\&nbsp;600{\textdegree}C.\&nbsp;X-Ray Diffraction (XRD) measurements indicate that the\&nbsp;crystallinity\&nbsp;of the sputtered layers was enhanced by increasing the annealing temperature. Significantly, photoelectrical characterization showed that the annealed\&nbsp;ITO/a-Si UV-PD\&nbsp;exhibits high detectivity exceeding\&nbsp;1013\&nbsp;Jones with a highly improved\&nbsp;UV-to-Vis\&nbsp;rejection ratio of\&nbsp;5.7\&nbsp;{\texttimes}\&nbsp;103. The\&nbsp;ITO/a-Si\&nbsp;heterojunction generated a built-in potential, enabling effective separation and transport of photo-induced carriers, thereby reducing\&nbsp;recombination losses. Therefore, by well optimizing the proposed\&nbsp;heterostructure\&nbsp;and the annealing conditions, we were able to elaborate new highly detective, thin-film solar-blind\&nbsp;UV-PD\&nbsp;based on\&nbsp;Si-photonics platform, which can be a promising alternative for future high-performance and cost-effective optoelectronic systems.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S136980012031266X},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and A Saidi and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {6771,
	title = {Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology},
	journal = {Materials Science in Semiconductor Processing},
	volume = {121},
	year = {2021},
	abstract = {
	In this paper, a new\&nbsp;heterojunction\&nbsp;structure based on ultrathin-film\&nbsp;ITO\&nbsp;sputtered on non-hydrogenated amorphous-silicon (a-Si) is developed for high-detectivity solar-blind\&nbsp;UV-photodetector\&nbsp;(UV-PD)\&nbsp;based on silicon (Si) photonics technology. A strategic combination of\&nbsp;Particle Swarm Optimization\&nbsp;(PSO)\&nbsp;and numerical analysis is used to find out the best design offering superior optoelectronic performance. The\&nbsp;optimized design\&nbsp;is then elaborated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. A comprehensive investigation of the device structural and optoelectronic properties was carried out, incorporating the influence of heat treatment at temperature values ranging from\&nbsp;300{\textdegree}C\&nbsp;to\&nbsp;600{\textdegree}C.\&nbsp;X-Ray Diffraction (XRD) measurements indicate that the\&nbsp;crystallinity\&nbsp;of the sputtered layers was enhanced by increasing the annealing temperature. Significantly, photoelectrical characterization showed that the annealed\&nbsp;ITO/a-Si UV-PD\&nbsp;exhibits high detectivity exceeding\&nbsp;1013\&nbsp;Jones with a highly improved\&nbsp;UV-to-Vis\&nbsp;rejection ratio of\&nbsp;5.7\&nbsp;{\texttimes}\&nbsp;103. The\&nbsp;ITO/a-Si\&nbsp;heterojunction generated a built-in potential, enabling effective separation and transport of photo-induced carriers, thereby reducing\&nbsp;recombination losses. Therefore, by well optimizing the proposed\&nbsp;heterostructure\&nbsp;and the annealing conditions, we were able to elaborate new highly detective, thin-film solar-blind\&nbsp;UV-PD\&nbsp;based on\&nbsp;Si-photonics platform, which can be a promising alternative for future high-performance and cost-effective optoelectronic systems.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S136980012031266X},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and A Saidi and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {6770,
	title = {Perovskite/InGaAs tandem cell exceeding 29\% efficiency via optimizing spectral splitter based on RF sputtered ITO/Ag/ITO ultra-thin structure},
	journal = {Physica E: Low-dimensional Systems and Nanostructures},
	volume = {128},
	year = {2021},
	abstract = {
	In this paper, the optimization, elaboration and characterization of an efficient spectral\&nbsp;beam splitter\&nbsp;based on a simple RF sputtered ITO/Ag/ITO (IAI) ultra-thin multilayer structure are presented. An experimental investigation assisted by\&nbsp;Genetic Algorithm\&nbsp;(GA) metaheuristic optimization was carried out to achieve high-performance spectral splitter for tandem solar cell applications. The RF\&nbsp;magnetron sputtering\&nbsp;method was used to elaborate the optimized IAI structure. The optical and structural properties of the sputtered splitter were also analyzed using UV{\textendash}Vis-IR spectroscopy and X-ray diffraction (XRD) measurements. It is found that the elaborated splitter structure offers 84\% of transparency and a high reflectance of 87\% with an optimum cut-off wavelength of 800\&nbsp;nm. This is attributed to the design approach, which leads to promote spectral splitting mechanism by inducing efficient\&nbsp;optical modulation. Interestingly, a new Figure of Merit (FoM) parameter, which evaluates the optical splitting performances is proposed. Moreover, a new Perovskite/InGaAs tandem cell is proposed and analyzed to show the impact of the elaborated spectrum splitter on the solar cell efficiency. It is revealed that the investigated solar cell exhibits an improved efficiency approaching 30\%. The latter value far surpasses that provided by\&nbsp;Perovskite\&nbsp;tandem cells. These results indicate that our spectrum splitting approach can open a new pathway towards designing high-performance tandem\&nbsp;photovoltaic devices.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1386947720316866},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and Benhaya Abdelhamid and A Saidi}
}
@article {6769,
	title = {Multispectral photodetection using low-cost sputtered NiO/Ag/ITO heterostructure: From design concept to elaboration},
	journal = {Ceramics International},
	volume = {47},
	number = {11},
	year = {2021},
	abstract = {
	High-performance multispectral\&nbsp;photodetectors\&nbsp;(PDs) are highly attractive for the emerging optoelectronic applications. In this work, a new broadband PD based on\&nbsp;p-NiO/Ag/n-ITO\&nbsp;heterostructure\&nbsp;was fabricated by RF\&nbsp;magnetron sputtering\&nbsp;technique at room temperature. The tri-layered structure offering multispectral detection property was first identified using theoretical calculations based on combined FDTD and Particle Swarm Optimization (PSO) techniques. The crystal structure of the elaborated sensor was analyzed using X-ray diffraction (XRD) method. The device optical properties were investigated by UV{\textendash}Vis{\textendash}NIR spectroscopy. The NiO/Ag/ITO heterostructured PD shows a high average absorbance of 63\% over a wide spectrum range of [200\&nbsp;nm{\textendash}1100nm]. Compared with NiO and ITO thin-films, the performances of the heterostructured device are considerably enhanced. It was found that the prepared PD with NiO/Ag/ITO heterostructure merges the benefits of multispectral photodetection with reduced\&nbsp;optical losses\&nbsp;and efficient transfer of photo-induced carrier. The device demonstrated a high ION/IOFF\&nbsp;ratio of 78\&nbsp;dB and an enhanced responsivity under UV, visible and NIR lights (171\&nbsp;mA/W at 365\&nbsp;nm, 67\&nbsp;mA/W at 550\&nbsp;nm and 93\&nbsp;mA/W at 850\&nbsp;nm). The broadband photodetection property enabled by the optimized NiO/Ag/ITO heterostructure opens a new route for the elaboration of low-cost devices that can offer multiple sensing purposes, which are highly suitable for optoelectronic applications.




},
	url = {https://www.sciencedirect.com/science/article/pii/S0272884221005034$\#$!},
	author = {Hichem Ferhati and Bendjerad, Adel and Fay{\c c}al Djeffal and Benhaya Abdelhamid and A Saidi}
}
@article {6768,
	title = {Giant responsivity of a new optically controlled graphene UV-phototransistor using graded band-gap ZnMgO gate},
	journal = {Sensors and Actuators A: Physical},
	volume = {325},
	year = {2021},
	abstract = {
	In this work, a new Ultraviolet Optically Controlled Graphene Field-Effect Transistor (UV-OC-GFET) based on Graded Band-Gap (GBG)\&nbsp;ZnMgO\&nbsp;photosensitive-gate is proposed. The device drain current model is numerically developed by self-consistently solving the Schr{\"o}dinger/Poisson equations based on non-equilibrium Green{\textquoteright}s function (NEGF) formalism. The influence of\&nbsp;GBG\&nbsp;strategy with different profiles on the device sensing performances is analyzed. Our investigation reveals that the use of both\&nbsp;GBG ZnMgO\&nbsp;photo-gate and graphene nanoribbon channel offers the dual-benefit of improved electric field distribution in the photosensitive layer and enhanced drain current. This leads to outperforming the device Figure of Merits (FoMs). In this context, it is found that the proposed\&nbsp;UV\&nbsp;sensor with optimized band-gap profile exhibits giant responsivity exceeding\&nbsp;1.5 {\texttimes} 106\&nbsp;A/W with superb detectivity of\&nbsp;7 {\texttimes} 1014\&nbsp;Jones, far surpassing that of the conventional\&nbsp;Si-channel based phototransistors. Therefore, this innovative strategy based on graphene nanoribbon channel combined with\&nbsp;GBG\&nbsp;sensitive-gate pinpoints a new path towards achieving high-performance visible-blind\&nbsp;UV-phototransistor, making it a potential alternative photoreceiver for chip-level optical communication and optoelectronic applications.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0924424721001643},
	author = {Kadri, A and Hichem Ferhati and Djeffal Fay{\c c}al}
}
@article {6765,
	title = {Absorption enhancement in amorphous Si by introducing RF sputtered Tiintermediate layers for photovoltaic applications},
	journal = {Materials Science and Engineering: B},
	volume = {269},
	year = {2021},
	abstract = {
	In this paper, embedded amorphous-silicon (a-Si) and titanium (Ti) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (TFSCs). Promising design strategy based on combining\&nbsp;FDTD\&nbsp;(finite difference time domain) with particle swarm optimization (PSO) was adopted to identify the\&nbsp;a-Si/Ti\&nbsp;multilayer structure offering the highest total absorbance efficiency (TAE). It is found that the proposed multilayer structure can serve as an effective absorber, yielding superb\&nbsp;TAE\&nbsp;exceeding\&nbsp;80\%. The\&nbsp;a-Si/Ti\&nbsp;multilayer was then elaborated by successive growth of\&nbsp;a-Si\&nbsp;and\&nbsp;Ti\&nbsp;ultrathin layers using\&nbsp;RF\&nbsp;magnetron sputtering technique. The sputtered\&nbsp;a-Si/Ti\&nbsp;thin-film was characterized by scanning electron microscopy (SEM),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV{\textendash}visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even\&nbsp;NIR\&nbsp;spectrum ranges. In particular, the prepared\&nbsp;a-Si/Ti\&nbsp;absorber exhibits an optical band-gap of\&nbsp;1.36\&nbsp;eV, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting\&nbsp;I-V\&nbsp;characteristics and electrical parameters under dark and\&nbsp;1-sun\&nbsp;illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized\&nbsp;a-Si/Ti\&nbsp;multilayer provides a sound pathway for designing promising alternative absorbers for the future development of\&nbsp;a-Si-based\&nbsp;TFSCs.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921510721001124},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Boubiche, N and Benhaya, Abdelhamid and Faerber, J and Le Normand, F, and Javahiraly, N and Fix, T}
}
@article {6764,
	title = {Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector},
	journal = {Journal of Non-Crystalline Solids},
	volume = {574},
	year = {2021},
	abstract = {
	The rapid progress of wide band gap SiC semiconductor material opens up new opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and power systems for a wide range of advanced applications. In this paper, low-noise solar-blind UV\&nbsp;photodetector\&nbsp;(PD) based on all-amorphous ZnO/SiC\&nbsp;heterostructure\&nbsp;was fabricated via RF\&nbsp;magnetron sputtering\&nbsp;technique. The device structural and optical properties were investigated before and after thermal treatment at different annealing temperature values varying from 300\&nbsp;{\textdegree}C to 600\&nbsp;{\textdegree}C. UV-Visible\&nbsp;spectroscopy revealed that the annealing process has a beneficial effect in terms of high UV absorbance and solar-blindness properties. Photoelectrical characterization demonstrated the high UV photoresponse and low dark noise of the prepared UV PD based on all-amorphous ZnO/SiC structure. Improvement of the device performances were achieved by an appropriate annealing process. After post-annealing, the thermally treated ZnO/SiC UV PD at 500\&nbsp;{\textdegree}C exhibits a high detectivity of 2.4\&nbsp;{\texttimes}\&nbsp;1012\&nbsp;Jones, high\&nbsp;signal to noise ratio\&nbsp;of 2.64{\texttimes}105\&nbsp;and a giant UV{\textendash}Vis\&nbsp;rejection ratio of 5.9\&nbsp;{\texttimes}\&nbsp;103. Therefore, the present study may provide new perspectives for fabricating ultralow dark noise solar-blind UV PD based on all-amorphous ZnO/SiC heterostructure, which promotes the development of integrated UV photonic systems based on SiC platform.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0022309321005317},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and A Saidi and Benhaya Abdelhamid}
}
@article {6763,
	title = {Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite},
	journal = {Journal of Alloys and Compounds},
	volume = {859},
	year = {2021},
	abstract = {
	Cost-effective multispectral\&nbsp;photodetectors\&nbsp;(PDs) exhibiting a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse offer an avenue for developing environmental monitoring devices, imaging sensors, object discrimination, and optical links. However,\&nbsp;PDs\&nbsp;based on a single semiconductor as light-sensitive layer are unable to provide broadband photodetection properties. In this work, a new\&nbsp;PD\&nbsp;device based on\&nbsp;ZnO-ZnS\&nbsp;Microstructured Composite (MC) which achieves a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse is demonstrated. The\&nbsp;ZnO-ZnS MC\&nbsp;is elaborated by combining vacuum thermal evaporation technique and a suitable annealing process. Scanning Electron Microscopy (SEM), energy-dispersive\&nbsp;X-ray spectroscopy (EDS),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV-Vis-NIR\&nbsp;spectroscopy were used to elucidate the morphological, structural and optical properties of the prepared sample. It was demonstrated that the\&nbsp;ZnO-ZnS MC\&nbsp;can be useful to enhance the visible absorbance efficiency by promoting efficient light-scattering effects. It is revealed that the prepared\&nbsp;UV-Vis-NIR PD\&nbsp;offers a low dark current of\&nbsp;5\&nbsp;nA, a high\&nbsp;ION/IOFF\&nbsp;ratio of\&nbsp;78\&nbsp;dB\&nbsp;and an enhanced responsivity in\&nbsp;UV, visible and\&nbsp;NIR\&nbsp;ranges. The proposed multispectral\&nbsp;PD\&nbsp;demonstrates a high\&nbsp;ION/IOFF\&nbsp;current ratio under self-powered working regime. Therefore, the proposed\&nbsp;ZnO-ZnS MC\&nbsp;is believed to provide new insights in developing efficient, self-powered and low-cost multispectral\&nbsp;PDs\&nbsp;for high-performance optoelectronic systems.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838820346053},
	author = {Benhaya, K and Fay{\c c}al Djeffal and Ferhati Hichem and Bendjerad, Adel and Benhaya, Abdelhamid and A Saidi}
}
@article {6762,
	title = {Microstructured ZnO-ZnS composite for earth-abundant photovoltaics: Elaboration, surface analysis and enhanced optical performances},
	journal = {Solar Energy},
	volume = {218},
	year = {2021},
	pages = {312-319},
	abstract = {
	In this paper,\&nbsp;ZnO-ZnS\&nbsp;composite structure is proposed as a new efficient and earth-abundant absorber material for thin-film solar cells (TFSCs). Promising elaboration strategy based on combining vacuum thermal evaporation technique and oxidation process under an annealing temperature of\&nbsp;500\&nbsp;{\textdegree}C\&nbsp;was used to prepare\&nbsp;ZnO-ZnS\&nbsp;composite with high sun-light absorption capabilities. The fabricated microstructure was then characterized by Scanning Electron Microscopy (SEM), energy-dispersive\&nbsp;X-ray spectroscopy (EDS),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV{\textendash}Visible absorption spectroscopy. The influence of the annealing time on the structural and optical performances of the prepared samples was investigated. Surface analysis demonstrated the\&nbsp;ZnO\&nbsp;decoration of\&nbsp;ZnS\&nbsp;thin-film, where\&nbsp;SEM\&nbsp;images showed dense and pinhole-free\&nbsp;ZnO-ZnS\&nbsp;composite with micrometer-sized grains and a few voids visible at thin-films surface. Optical characterization showed that the prepared thin-film absorber exhibits an optical band-gap of\&nbsp;2.65\&nbsp;eV\&nbsp;with a high Total Absorption Efficiency (TAE) of\&nbsp;62\%\&nbsp;and an absorption coefficient exceeding\&nbsp;2\&nbsp;{\texttimes}\&nbsp;104\&nbsp;cm-1. In addition,\&nbsp;I-V\&nbsp;characteristics under dark and\&nbsp;1-sun\&nbsp;illumination of the microstructured\&nbsp;ZnO-ZnS\&nbsp;composite were extracted. It was revealed that the proposed absorber showcases a high visible photoresponse. Therefore, promoting effective light-scattering effects, this innovative\&nbsp;ZnO-ZnS\&nbsp;composite offers a sound pathway to prepare alternative low-cost absorbers for the future development of\&nbsp;TFSCs.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0038092X21001717},
	author = {Benyahia, Kaddour and Fay{\c c}al Djeffal and Hichem Ferhati and Benhaya, Abdelhamid and Bendjerad, Adel and Djaballah, Y and Martin, N}
}
@article {6760,
	title = {New modeling approach of laser communication in constellation and through atmospheric disturbances},
	journal = {Bulletin of Electrical Engineering and Informatics},
	volume = {10},
	number = {4},
	year = {2021},
	abstract = {
	Laser communication between satellites in the constellation and from the satellites to ground stations offers a gigantic data rate for the users. This principal advantage drives telecom companies to develop this technology to use it like a carrier signal, the most disadvantage of this technology is the need to very complicated pointing systems between the transmitter and the receiver due to a very small beam divergence, continually moving of satellites in orbits and the distance between the satellites (tens of thousands of kilometers). The laser beam suffers continuously from several factors like atmospheric turbulences, internal and external vibrations. All these factors lead to an increase in the bit errors rate and cause degradation in the communication quality. This paper deals with a new method of modelisation of external effects in transmission of signal light from a ground station to the satellite through atmospheric disturbances. Indeed, an in-depth investigation, of the influences of satellite vibrationsinlaser signal transmission between satellites constellation, has been conducted by studying the effect of the intensity of vibrations on the optical signal amplitude. Some solutions are proposed to improve the efficiency of optical satellites communications.

},
	url = {https://www.beei.org/index.php/EEI/article/view/2792},
	author = {Chenina, Hachemi and Benatia, Djamel and Boulakroune, M{\textquoteright} Hamed}
}
