@book {6184,
	title = {Comparison between Boron and Phosphorus Diffusion profiles in MOS Transistors using SILVACO ATHENA and Matlab in both 2D and 3D},
	year = {2019},
	pages = {52},
	publisher = {Editions universitaires europeennes},
	organization = {Editions universitaires europeennes},
	abstract = {
	Dopant diffusion in semiconductors is a very important in process step of device. diffusion has a great influence on the electrical and electronic properties especially in the lacunary and interstitial mechanismis. This chapter investigates the diffusion of P and B in Si. The profiles have been simulated using Secondary Ion Mass Spectrometry (SIMS) modele [1,2]. In the process for manufacturing MOS transistor, the manufacturers follow basically three steps. The starting substrate is a monocrystalline silicon wafer. The first step consists in producing the polysilicon gate on a thin layer of SiO2 followed by implantation (boron) of the gate. The second step is the training of source-drain junctions by ion implantation to high dose (≈ 10 15 at / cm2) and the third is to silicide the source-drain junctions for reduce the contact resistance. One of the most promising silicides is the monosilicide of nickel (NiSi). therefore, it is very important to understand the redistribution of dopants in the different active parts of a transistor by studying the following points: {\textbullet} The redistribution of boron in polycrystalline silicon (gate), {\textbullet} The redistribution of boron in the monocrystal

},
	url = {https://my.editions-ue.com/catalog/details/store/gb/book/978-613-8-48769-2/comparison-between-boron-and-phosphorus-diffusion-profiles-in-mos-tran},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@mastersthesis {5360,
	title = {Contribution {\`a} l\&$\#$39;am{\'e}lioration du rendement de cellule soalire {\`a} h{\'e}t{\'e}rostructures},
	year = {2019},
	author = {Kalinka Kacha}
}
@mastersthesis {5359,
	title = {Contribution to the modeling and optimization of new opto{\'e}lectronic devices},
	year = {2019},
	author = {Ferhati Hichem}
}
@mastersthesis {5344,
	title = {Etude des micro-actionneurs {\'e}lectrostatiques},
	year = {2019},
	author = {Belkars Ahmed}
}
@mastersthesis {5343,
	title = {Etude et r{\'e}alisation d\&$\#$39;un appareil de mesure de la r{\'e}ponse des capeturs aux ultraviolets},
	year = {2019},
	author = {Belkacemi Nouha and Laidani Abdelkarim}
}
@mastersthesis {5342,
	title = {Contribution {\`a} l\&$\#$39;am{\'e}lioration du biocapteur ISFET {\`a} base de nitrure de silicium},
	year = {2019},
	author = {Zeghdar Oumeima}
}
@mastersthesis {5341,
	title = {Etude et r{\'e}alisation d\&$\#$39;une serrure intelligente \&quot;Smart Lock\&quot;},
	year = {2019},
	author = {Allaeddine Bouhafna and Bouguenna Abderraouf}
}
@mastersthesis {5331,
	title = {Commande robuste intelligente appliqu{\'e}e au suivi de trajectoires d\&rsquo;un syst{\`e}me robotique},
	year = {2019},
	author = {Benaziza Walid}
}
@mastersthesis {5313,
	title = {Conception et r{\'e}alisation d\&$\#$39;une antenne microruban op{\'e}rant {\`a} la fr{\'e}quence 2,4 GHz},
	year = {2019},
	author = {Merabet, Djamal Eddine}
}
@mastersthesis {5312,
	title = {Fr{\'e}quence de r{\'e}sonance d\&$\#$39;une antenne microbande de forme triangulaire sur substrat ajustable et bicouche},
	year = {2019},
	author = {Rouibak, Ahlem and Arab, Nour El-Houda}
}
@mastersthesis {5307,
	title = {Filtres optiques {\`a} reponse impulsionnelle finie (RIF), filtres {\`a} coefficients reels},
	year = {2019},
	author = {Yahia cherif khaled and Merazga Imane}
}
@mastersthesis {5302,
	title = {Analyse des antennes microbandes supraconductrices de formes r{\'e}guli{\`e}res par la m{\'e}thode de la cavit{\'e}},
	year = {2019},
	author = {AGABA Chahinez and CHEKHAB Hichem}
}
@mastersthesis {5279,
	title = {Conception d\&rsquo;un Convertisseur Analogique Num{\'e}rique Flash 3 Bits en Technologie CMOS 130nm},
	year = {2019},
	author = {Benaouina Souraya}
}
@mastersthesis {5278,
	title = {Design of a 10-Bit Successive Approximation Type Analog to Digital Converter Using TSMC 130nm CMOS Technology},
	year = {2019},
	author = {Abdessamed Elhassen}
}
@mastersthesis {5277,
	title = {CONCEPTION D\&rsquo;UN AMPLIFICATEUR OPERATIONNEL TELESCOPIQUE EN TECHNOLOGIE CMOS 130NM},
	year = {2019},
	author = {FATIHA ARAB}
}
@proceedings {4663,
	title = {Effects of Carrier Mobility and defects on the Recombination Characteristic of P3HT:Graphene Bulk Heterojunction Solar Cell},
	journal = {3{\`e}me congr{\`e}s international sur les {\'e}nergies renouvelables et le d{\'e}veloppement durable ERDD-2019},
	year = {2019},
	url = {http://www.conf-event.com/ERDD/papers/Programme_ERDD{\textquoteright}2019.pdf},
	author = {N. Touafek}
}
@proceedings {4662,
	title = {Impact of the secondary phase ZnS on CZTS performance solar cells},
	journal = {3{\`e}me congr{\`e}s international sur les {\'e}nergies renouvelables et le d{\'e}veloppement durable ERDD-2019},
	year = {2019},
	url = {http://www.conf-event.com/ERDD/papers/Programme_ERDD{\textquoteright}2019.pdf},
	author = {N. Touafek}
}
@proceedings {4631,
	title = {Dectection all types of acoustics microwaves in piezoelectric material (ZnO) by classification using support vector machines (SVM)},
	journal = {International Conference on Electronics and Electrical Engineering- 12-13 November 2018, Bouira- ALGERIA},
	year = {2019},
	address = {Bouira, Algeria},
	abstract = {
	In this paper, we propose a new numerical method for acoustics microwaves detection of an acoustics microwaves signal during the propagation of acoustics microwaves in a piezoelectric substrate Zinc oxide (ZnO) . We have used Support Vector Machines (SVM) ,the originality of this method is the accurate values that provides .this technic help us to identify undetectable waves that we can not identify with the classical methods; in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the types of microwaves acoustics( bulk waves or surface waves or leaky waves) . By which we obtain accurate values for each of the coefficient attenuation and acoustic velocity. This study will be very interesting in modeling and realization of acoustics microwaves devices (ultrasound ,Radiating structures , Filter SAW {\textellipsis}.) based on the propagation of acoustics microwaves.

},
	url = {http://ic3e.univ-bouira.dz/ICEEE/Conference\%20 Program.pdf},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@proceedings {4628,
	title = {Fast and Accurate Model to Determine the Resonant Characteristics of Elliptical Microstrip Patch Antenna},
	journal = {International Conference on Advanced Systems and Electric Technologies (IC_ASET), Tunisie},
	year = {2019},
	url = {https://ieeexplore.ieee.org/abstract/document/8871019},
	author = {Mahamdi Ahmed}
}
@proceedings {4627,
	title = {Artificial Neural Network Model Analysis of Tunable Circular Microstrip Patch Antenna},
	journal = {International Conference on Advanced Systems and Electric Technologies (IC_ASET), Tunisie},
	year = {2019},
	url = {https://ieeexplore.ieee.org/abstract/document/8870988},
	author = {Mahamdi Ahmed}
}
@proceedings {4620,
	title = {Optimization of ZnTe:O solar cell using genetic algorithms},
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634467},
	author = {Lakehal Brahim}
}
@proceedings {4619,
	title = {ANN modeling of an industrial gas sensor behavior},
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634510},
	author = {Kouda Souhil}
}
@proceedings {4618,
	title = {MDAC Design for an 8-bit 40 MS/s Pipelined ADC in a 0.18μm CMOS Process },
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634519},
	author = {Lakehal Brahim}
}
@proceedings {4617,
	title = {Numerical Study of Low Gain Avalanche Detector Performance},
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634532},
	author = {Bendib Toufik}
}
@article {4086,
	title = {Impact of deposition methods and doping on structural, optical and electrical properties of ZnO-Al thin films, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 186},
	year = {2019},
	pages = {pp  293-299},
	abstract = {In this work, thin films of aluminum doped ZnO (AZO) were deposited on ultrasonically cleaned\&nbsp;glass substrates\&nbsp;by\&nbsp;sol-gel process\&nbsp;using dip and spin\&nbsp;coating techniques. For this purpose, Zinc acetate dihydrate, aluminum nitrate nonahydrate, ethanol and mono\&nbsp;ethanolamine\&nbsp;were employed as precursor,\&nbsp;dopant, solvent and stabilizer, respectively.\&nbsp;X-ray diffraction, UV{\textendash}vis,\&nbsp;photoluminescence, 4-point probe and Van der pauw techniques were investigated for the characterization of the prepared AZO thin films.\&nbsp;X-ray-analysis\&nbsp;revealed that all the prepared films have hexagonal\&nbsp;wurtzite\&nbsp;structure with a relative preferential orientation along the c-axis and the\&nbsp;lattice parameters\&nbsp;are close to the standard values reported in literature.\&nbsp;UV{\textendash}vis spectroscopy\&nbsp;showed that the average value of the films{\textquoteright}\&nbsp;transmittance\&nbsp;in the visible region is found to be around 85\% and the gap ranges in the interval [3.15 eV{\textendash}3.30 eV]. The photoluminescence spectrum only showed the UV peak while the broad band of the visible region was completely vanished. The electrical measurements indicate that sol-gel methods provide relatively high\&nbsp;resistivities\&nbsp;compared to those obtained with physical\&nbsp;vapor deposition\&nbsp;(PVD) techniques.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402619306084},
	author = {A.Zaiour and Benhaya Abdelhamid and Bentrcia Toufik}
}
@article {4085,
	title = {Determination of magnetic properties of a Ni/NiO/Ni multilayer:an ANFIS-based predictive technique, ISSN / e-ISSN 0947-8396 / 1432-0630},
	journal = {Applied Physics A},
	volume = {25},
	number = {1~},
	year = {2019},
	pages = {56},
	abstract = {
	In this paper, Ni/NiO/Ni multilayers are deposited on glass substrates using radio frequency magnetron sputtering, where the structural and morphological properties are analyzed using X-ray diffraction besides scanning electron microscopy techniques. The associated magnetic hysteresis loops are obtained by vibrating sample magnetometer for temperatures ranging from - 100 to 300 {\textdegree}C. Hence, the parameters α, β, Bmax, HC, and Br defining a hysteresis loop are determined at each temperature using Preisach model for the first two parameters, while the remaining ones are deduced experimentally. The set of these parameters are introduced within the training data set in the context of an ANFIS-based approach to predict the hysteresis loop of a Ni/NiO/Ni multilayer for any temperature below the Curie temperature. The comparison conducted between theoretical and experimental results showed a good agreement. This work provided more insights regarding the consolidation of experimental characterization with the development of soft computing-based frameworks.

},
	url = {https://www.researchgate.net/publication/330085883_Determination_of_magnetic_properties_of_a_NiNiONi_multilayer_an_ANFIS-based_predictive_technique},
	author = {Bendjerad Adel and Benhaya, Abdelhamid and Bentrcia Toufik and Djeffal Fay{\c c}al and Zergoug, M and Smaili, Fatiha}
}
@article {4084,
	title = {Electron-phonon dynamics in 2D carbon based-hybrids XC (X = Si, Ge, Sn), ISSN / e-ISSN 0953-8984 / 1361-648X},
	journal = {ournal of Physics Condensed Matter },
	volume = { Volume 31},
	number = {N{\textdegree}13},
	year = {2019},
	pages = {pp 135702},
	abstract = {The effect of the presence of electron{\textendash}phonon (e{\textendash}ph) coupling in the SiC, GeC and SnC hybrids is studied in the framework of the\&nbsp;ab initio\&nbsp;perturbation theory. The electronic bang gap thermal dependence reveals a normal monotonic decrease in the SiC and GeC semiconductors, whereas SnC exhibits an anomalous behavior. The electron line widths were evaluated and the contributions of acoustic and optical phonon modes to the imaginary part of the self-energy were determined. It has been found that the e{\textendash}ph scattering rates are globally controlled by the out-of-plane acoustic transverse mode ZA in SiC while both ZA and ZO are overriding in GeC. In SnC, the out-of-plane transverse optical mode ZO is the most dominant. The relaxation lifetime of the photo-excited electrons shows that the thermalization of the hot carrier occurs at 90 fs, 100 fs and 120 fs in SiC, GeC and SnC, respectively. The present study properly describes the subpicosecond time scale after sunlight illumination using an approach that requires no empirical data. The results make the investigated structures suitable for providing low cost and high-performance optical communication and monitoring applications using 2D materials.},
	url = {https://iopscience.iop.org/article/10.1088/1361-648X/aaff3b},
	author = {L.B.Drissi and Kanga Junior and Samir Lounis and Djeffal Fay{\c c}al and S.Haddad}
}
@article {4083,
	title = {Influence of TCO intermediate thin-layers on the electrical and thermal properties of metal/TCO/p-Si Schottky structure fabricated via RF magnetron sputtering},
	journal = {Physica E: Low-dimensional Systems and Nanostructures},
	volume = {106},
	year = {2019},
	pages = {25-30},
	abstract = {In this paper, versatile\&nbsp;Metal/TCO/p-Si\&nbsp;Schottky Barrier\&nbsp;Diodes (SBDs) with dissimilar\&nbsp;TCO\&nbsp;intermediate layers (ZnO\&nbsp;and\&nbsp;ITO) were fabricated by\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. An overall electrical performance comparison between the\&nbsp;Al/ZnO/p-Si, Au/ITO/p-Si\&nbsp;and the conventional\&nbsp;Au/p-Si\&nbsp;structures is carried out. The measured\&nbsp;I-V\&nbsp;characteristics indicate that the proposed\&nbsp;Al/ZnO/p-Si\&nbsp;design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of\&nbsp;0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing\&nbsp;TCO\&nbsp;inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with\&nbsp;ITO\&nbsp;and\&nbsp;ZnO\&nbsp;sub-layers exhibits improved\&nbsp;FoM\&nbsp;parameters as compared to the conventional\&nbsp;Au/p-Si\&nbsp;structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the\&nbsp;Si-based\&nbsp;SBDs\&nbsp;design tradeoffs. It is demonstrated that the insertion of a\&nbsp;TCO\&nbsp;inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.},
	url = {https://www.sciencedirect.com/science/article/pii/S1386947718313754},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Kalinka Kacha and Bendjerad, Adel and Benhaya, Abdelhamid}
}
@article {4082,
	title = {Optimized high-performance ITO/Ag/ITO multilayer transparent electrode deposited by RF magnetron sputtering},
	journal = {Superlattices and Microstructures},
	volume = {129},
	number = {3},
	year = {2019},
	pages = {176-184},
	abstract = {This paper presents the optimization, elaboration and characterization of a new\&nbsp;TCO\&nbsp;(Transparent Conductive Oxides)\&nbsp;electrode\&nbsp;based on\&nbsp;ITO/Ag/ITO\&nbsp;multilayer design that enables overcoming the trade-off between the electrical and optical properties. A new hybrid approach combining the investigated design and Particle Swarm Optimization (PSO) technique is conducted with the aim of maximizing the\&nbsp;Haacke\&nbsp;Figures of merit (FoM). It is found that the optimized\&nbsp;ITO/Ag/ITO\&nbsp;tri-layered design paves a new path toward achieving a high\&nbsp;FoM\&nbsp;of\&nbsp;125 {\texttimes} 10-3Ω-1. Such improvement is attributed to the improved light management achieved by the efficient modulation of the\&nbsp;Ag\&nbsp;sub-layer geometry. Subsequently, the optimized multilayer design is fabricated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. The structural, optical and electrical properties associated with the deposited\&nbsp;ITO/Ag/ITO\&nbsp;multilayer structure\&nbsp;are also analyzed. It is found that the fabricated\&nbsp;TCO-based electrode shows a high\&nbsp;transmittance\&nbsp;over than\&nbsp;94.1\%\&nbsp;and a low sheet resistance of\&nbsp;4.5Ω {\texttimes} sq-1, which is in good agreement with the theoretical predictions. Therefore, the proposed design methodology based on experiments assisted by\&nbsp;PSO\&nbsp;metaheuristic approach offers exciting opportunities for bridging the gap between transparency and\&nbsp;conductivity\&nbsp;characteristics. This makes the elaborated\&nbsp;ITO/Ag/ITO\&nbsp;multilayer design suitable for high-performance optoelectronic applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603619304835},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Benhaya, Abdelhamid}
}
@article {4081,
	title = {Effects of annealing temperature and ITO intermediate thin-layer on electrical proprieties of Au/p-Si structure deposited by RF magnetron sputtering, ISSN 0749-6036},
	journal = {Superlattices and Microstructures },
	volume = {128},
	year = {2019},
	pages = {382-391},
	abstract = {In this paper, a new\&nbsp;Au/p-Si\&nbsp;Schottky Barrier\&nbsp;Diode (SBD) based on\&nbsp;Indium\&nbsp;Tin Oxide (ITO) intermediate\&nbsp;thin-film\&nbsp;is proposed and experimentally investigated by including the annealing\&nbsp;temperature effect. We elaborated the\&nbsp;Au/ITO/p-Si\&nbsp;structure by means of\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique and compared its electrical properties with the conventional\&nbsp;Au/p-Si SBD. The role of the annealing process at\&nbsp;200\&nbsp;and\&nbsp;400 {\textdegree}C\&nbsp;as well as the\&nbsp;ITO\&nbsp;interface thin-layer in improving the\&nbsp;SBD\&nbsp;basic electrical parameters is analyzed. The characterization has revealed that a higher Schottky barrier (ϕb) of\&nbsp;0.79V\&nbsp;is achieved. Moreover, close to unit ideality factor of (n = 1.25) and reduced density of states (Nss = 1.5 {\texttimes} 1012cm-2) and series resistance of (Rs = 32Ω) are recorded. These achievements can be attributed to the enhanced interface quality provided by introducing the\&nbsp;ITO\&nbsp;thin-film. Moreover, the annealing process enables improved\&nbsp;crystallinity\&nbsp;and allows efficient rearrangement of atoms at the interfaces. The thermal stability behavior of the investigated designs is analyzed, where new Figure of Merit (FoMs) parameters are proposed. It is found that the annealed\&nbsp;Au/ITO/p-Si\&nbsp;structure offers the opportunity for suppressing the degradation related-heating effects. Therefore, the proposed\&nbsp;Au/ITO/p-Si SBD\&nbsp;pinpoint a new path toward achieving superior electrical characteristics and improved thermal stability, which makes it a potential alternative for high-performance microelectronic and optoelectronic applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603618324765},
	author = {Djeffal Fay{\c c}al and Hichem Ferhati and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {4080,
	title = {Exceeding 30\% efficiency for an environment-friendly tandem solar cell based on earth-abundant Se/CZTS materials, ISSN / e-ISSN 1386-9477 / 1873-1759},
	journal = {Physica E: Low-dimensional Systems and Nanostructures },
	volume = {Volume 109},
	year = {2019},
	pages = {pp 52-58},
	abstract = {In this paper, a new\&nbsp;Se/CZTSSe\&nbsp;tandem solar cell architecture is proposed as a viable approach to reach ultrahigh efficiency values at low fabrication cost. The proposed tandem design consists of a\&nbsp;Se-based top cell with\&nbsp;Ti\&nbsp;intermediate ultra-thin metallic layers (MLs) and a\&nbsp;CZTS\&nbsp;bottom cell with graded band-gap aspect. The role of the introduced design amendments in achieving the dual-benefit of enhanced optical behavior and reduced recombination losses is investigated by means of an accurate numerical modeling. Moreover, a comprehensive study which involves the impact of design parameters such as the\&nbsp;MLs\&nbsp;position and the\&nbsp;CZTSSe\&nbsp;band-gap profile on the device performance is carried out. Moreover, Particle Swarm Optimization (PSO)-based metaheuristic technique is used to boost up the\&nbsp;Se/CZTSSe\&nbsp;tandem cell efficiency by identifying both the suitable position of the introduced ultrathin\&nbsp;MLs\&nbsp;and the appropriate\&nbsp;CZTSSe\&nbsp;band-gap profile. It is found that the adopted optimization approach pinpoints a new path toward achieving over 30\% efficiency, not only it provides the possibility to reduce interface recombination effects by optimizing the band offset at the buffer/absorber interfaces but also enables selecting the most favorable design configuration associated with enhanced optical behavior. This makes the optimized\&nbsp;Se/CZTSSe\&nbsp;tandem solar cell potential alternative for providing high-efficiency and stable tandem solar cell.},
	url = {https://www.sciencedirect.com/science/article/pii/S1386947718317144},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4079,
	title = {Effects of high temperature annealing in enhancing the optoelectronic performance of sputtered ITO/Ag/ITO transparent electrodes, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {130},
	year = {2019},
	pages = {361-368},
	abstract = {
	In this paper, a transparent conductive\&nbsp;ITO/Ag/ITO\&nbsp;(IAI) multilayer structure with a high Haacke Figure of Merit (FoM) far surpassing those found up to now is experimentally demonstrated. An optimized\&nbsp;IAI\&nbsp;multilayer electrode was elaborated by means of\&nbsp;RF\&nbsp;magnetron sputtering technique. The structural and electrical characteristics of the prepared tri-layered design were investigated. The influence of the annealing process on the\&nbsp;IAI\&nbsp;electrode performance was also carried out. Unlike the\&nbsp;IAI\&nbsp;structure as-deposited, it was revealed that the annealed samples maintained an average transparency superior than\&nbsp;89\%. This behavior indicates the effectiveness of the thermal treatment for ensuring favorable light management. In addition, it was found that the annealing process paves a new path toward improving the electrode conductivity, where the heat treated electrode at\&nbsp;600{\textdegree}C\&nbsp;yielded a very low sheet resistance of\&nbsp;2.95Ω {\texttimes} sq-1. Therefore, by well optimizing both\&nbsp;IAI\&nbsp;geometry and annealing conditions, we were able to elaborate high-quality coating with a superior\&nbsp;FoM\&nbsp;of\&nbsp;120.8 {\texttimes} 10-3Ω-1. This makes the sputtered\&nbsp;IAI\&nbsp;multilayer design a suitable alternative to the conventional\&nbsp;ITO-based electrodes for optoelectronic and photovoltaic applications.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603619307608},
	author = {Fay{\c c}al Djeffal and Hichem Ferhati and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {4024,
	title = {New Deconvolution Technique to Improve the Depth Resolution in Secondary Ion Mass Spectrometry},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {11},
	number = {2},
	year = {2019},
	pages = {02021-1-02021-5},
	abstract = {
	This paper presents an efficient method for recovery of SIMS signals from strongly noised blurred discrete data. This technique is based on Tikhonov-Miller regularization where a priori model of solution is included. The latter is a denoisy signal obtained using the Kalman filter. This is an interesting estimation method, but it can only be used when the system is described precisely. By comparing the results of the proposed technique with those of the literature, our algorithm gives the best results without artifacts and oscillations related to noise and significant improvement of the depth resolution. While, the gain in FWHM is less improved than those obtained by the wavelet technique. Therefore, this new algorithm can push the limits of SIMS measurements towards its ultimate resolution.

},
	url = {https://www.researchgate.net/publication/https://jnep.sumdu.edu.ua/download/numbers/2019/2/articles/jnep_11_2_02021.pdf},
	author = {Dahraoui, Nadia and Boulakroune, Mhamed and Benatia, Djamel}
}
@article {4021,
	title = {
	Effects of Superstrate Layer on the Resonant Characteristics of Superconducting Rectangular Microstrip Patch Antenna, e-ISSN 1937-8718

},
	journal = {Progress In Electromagnetics Research C},
	volume = {Volume 62},
	year = {2019},
	pages = {pp 57{\textendash}165},
	abstract = {The resonant characteristics of superconducting rectangular microstrip patch antenna witha superstrate layer are investigated using a full-wave spectral analysis in conjunction with the complexresistive boundary condition. The complex surface impedance of superconducting patch is determinedusing London{\textquoteright}s equation and the two-fluid model of Gorter and Casimir. Numerical results using thefull-wave analysis presented here are in excellent agreement with theoretical and experimental resultsavailable in the open literature. Numerical results show that the effect of the superstrate layer on theresonant frequency and half-power bandwidth of the superconducting rectangular patch is stronger thanthat of the structure without superstrate layer as both the thickness and permittivity of the superstrateincrease. Finally, numerical results concerning the effects of the parameters of superstrate-substrateand superconducting patch on the antenna performance are also presented and discussed},
	url = {http://www.jpier.org/PIERC/pierc62/17.15122902.pdf},
	author = {Bedra Sami and Fortaki Tarek}
}
@article {4020,
	title = {Regrouping of acoustics microwaves in piezoelectric material (ZnO) by SVM classifier},
	journal = {International Journal of Digital Signals and Smart Systems},
	volume = {3},
	number = {1/2/3},
	year = {2019},
	pages = {110 - 120},
	abstract = {In this paper, we propose a new numerical method for acoustics microwaves detection of an acoustics microwaves signal during the propagation of acoustics microwaves in a piezoelectric substrate zinc oxide (ZnO). We have used support vector machines (SVMs), the originality of this method is the accurate values that provides this technique help to identify undetectable waves that we can not identify with the classical methods. We classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the types of microwaves acoustics (bulk waves or surface waves or leaky waves). We obtain accurate values for each of the coefficient attenuation and acoustic velocity. This study will be very interesting in modelling and realisation of acoustics microwaves devices (ultrasound, radiating structures, filter SAW{\textellipsis}) based on the propagation of acoustics microwaves.},
	url = {https://www.researchgate.net/publication/337073417_Regrouping_of_acoustics_microwaves_in_piezoelectric_material_ZnO_by_SVM_classifier},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@article {4019,
	title = {Comparative Between (LiNbO3) and (LiTaO3) in Detecting Acoustics Microwaves Using Classification},
	journal = {Journal of Microwave Engineering and Technologies},
	volume = {8},
	number = {1},
	year = {2019},
	pages = {33-43 },
	abstract = {
	Our work is mainly about detecting acoustics microwaves in the type of BAW (Bulk acoustic waves), where we compared between Lithium Niobate (LiNbO3) and Lithium Tantalate (LiTaO3) ,during the propagation of acoustic microwaves in a piezoelectric substrate. In this paper, We have used the classification by Probabilistic Neural Network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity for conclude whichever is the best in utilization for generating bulk acoustic waves.This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.

},
	url = {https://www.researchgate.net/publication/333839891_Comparative_between_LiNbO3_and_LiTaO3_in_detecting_acoustics_microwaves_using_classification},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@article {4018,
	title = {Study of Stacked High Tc Superconducting Circular Disk Microstrip Antenna in Multilayered Substrate Containing Isotropic and/or Uniaxial Anisotropic Materials, e-ISSN},
	journal = {Advanced Electromagnetics},
	volume = {Volume 8},
	number = {N{\textdegree}3},
	year = {2019},
	abstract = {In this paper, we present a rigorous full-wave analysis able to estimate exactly the resonant characteristics of stacked high Tc superconducting circular disk microstrip antenna. The superconducting patches are assumed to be embedded in a multilayered substrate containing isotropic and/or uniaxial anisotropic materials (the analysis is valid for an arbitrary number of layers). London{\textquoteright}s equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disks. Numerical results are presented for a single layer structure as well as for two stacked circular disks fabricated on a double-layered substrate.},
	url = {https://www.aemjournal.org/index.php/AEM/article/view/583},
	author = {Boughrara Akrame Sofiane and Benkouda Siham and Bouraiou Abdelouahab and Fortaki Tarek}
}
@article {4017,
	title = {Study of two-layered circular patch using moment method and genetic Algorithms, e-ISSN 2088-8708},
	journal = {International Journal of Electrical \& Computer Engineering},
	volume = {Volume 9},
	number = {N{\textdegree} 6},
	year = {2019},
	pages = {pp 5368 - 5375},
	abstract = {
	
		In this paper, new expressions for the effective radius and fringing capacitance have been derived to predict accurately the resonant frequency of the two-layered circular microstrip patch antenna. These expressions are obtained based on genetic algorithm and the data base is generated using moment method (MOM). The proposed model is very simple, fast, and valid for an entire range of permittivities and thicknesses of two-layered substrate. The present model has been validated by comparing our numerical results obtained for the resonant frequencies with measurements. Finaly, the effect of the two-layered substrate on the resonant charateristics of the circular microstrip patch antenna has been presented.
	

},
	url = {http://ijece.iaescore.com/index.php/IJECE/article/view/17376},
	author = {Mahamdi Ahmed and Benkouda Siham and Mounir Amir and Bedra Sami}
}
@article {4015,
	title = {Study of an Inverted Rectangular Patch Printed on Anisotropic Substrates },
	journal = {IETE Journal of Research },
	volume = {68},
	number = {2},
	year = {2019},
	abstract = {
	The resonant frequencies and bandwidths of the inverted rectangular patch over anisotropic substrates are investigated in this paper. A rigorous analysis is performed using dyadic Green{\textquoteright}s function formulation in the vector Fourier transform domain. The Galerkin{\textquoteright}s technic is then used in the resolution of the integral equation; the complex resonance frequencies for the TM01 mode are studied with sinusoidal basis functions. The numerical results obtained are compared with previously published numerical results computed by means of the electromagnetic simulator {\textquotedblleft}IE3D software{\textquotedblright}. Good agreement is found in all cases among all sets of results. For an isotropic substrate, it is confirmed that the bandwidth decreases with increasing of air-gap layer for high permittivity and low thickness of the substrate. Also, we show that the resonant frequencies and bandwidths are highly dependent on the permittivity variations alongside the optical axis. Other theoretical results attained display that the resonant frequencies downtrend monotonically with increasing substrate thickness, the diminution being larger for the uniaxial anisotropy of the substrate. Finally, numerical results for the effects of uniaxial anisotropy in the substrate on the radiation of the inverted rectangular microstrip structure are also presented.

},
	url = {https://www.tandfonline.com/doi/abs/10.1080/03772063.2019.1634497},
	author = {Bedra, Sami and Bedra , Randa and Benkouda , Siham and Fortaki , Tarek}
}
@article {3988,
	title = {Neural Network Technique for Electronic Nose Based on High Sensitivity Sensors Array, ISSN / e-ISSN 1557-2064 / 1557-2072},
	journal = {Sensing and Imaging},
	year = {2019},
	abstract = {Electronic Nose, as an artificial olfaction system, has potential applications in environmental monitoring because of its proven ability to recognize and discriminate between a variety of different gases and odors. In this paper, we used a chemical sensor array to develop an electronic nose to detect and identify seven different gases (H2, C2H2, CH4, CH3OCH3, CO, NO2, and NH3). These gas sensors are chosen because of its hierarchical/doped nanostructure characteristics, which give them a very high sensitivity and low response time; we improve the linearity response and temperature dependence using models based on artificial neural networks. We used in Electronic nose a pattern recognition based on artificial neural network, which discriminates qualitatively and quantitatively seven gases and has a fast response.},
	url = {https://link.springer.com/article/10.1007/s11220-019-0233-3},
	author = {S. Khaldi and Dibi Zohir}
}
@article {3960,
	title = {A Comparative Study on Scaling Capabilities of Si and SiGe Nanoscale Double Gate Tunneling FETs ISSN / e-ISSN 1876-990X / 1876- 9918},
	journal = {Silicon-Neth},
	year = {2019},
	pages = {pp 1{\textendash}9},
	abstract = {In the last few years, an accelerated trend towards the miniaturization of nanoscale circuits has been recorded. In this context, the Tunneling Field-Effect Transistors (TFETs) are gaining attention because of their good subthreshold characteristics, high scalability and low leakage current. However, they suffer from low values of the ON-state current and severe ambipolar transport mechanism. The aim of this work is to investigate the performance of SiGe nanoscale Double Gate TFET device including low doped drain region. The electrical performance of the considered device is investigated numerically using ATLAS 2D simulator, where both scaling and reliability aspects of the proposed design are reported. In this context, we address the impact of the channel length, traps density and drain doping parameters on the variation of some figures of merit of the device namely the swing factor and the ION/IOFF\&nbsp;ratio. The obtained results indicate the superior immunity of the proposed design against traps induced degradation in comparison to the conventional TFET structure. Therefore, this work can offer more insights regarding the benefit of adopting channel materials and drain doping engineering techniques for future reliable low-power nanoscale electronic applications.},
	url = {https://link.springer.com/article/10.1007/s12633-019-00190-w},
	author = {Bentrcia Toufik and Djeffal Fay{\c c}al and Hichem Ferhati and Dibi Zohir}
}
@article {3952,
	title = {Determination of magnetic properties of a Ni/NiO/Ni multilayer: an ANFIS-based predictive technique},
	journal = {Applied Physics },
	volume = {125},
	year = {2019},
	abstract = {
	In this paper, Ni/NiO/Ni multilayers are deposited on glass substrates using radio frequency magnetron sputtering, where the structural and morphological properties are analyzed using X-ray diffraction besides scanning electron microscopy techniques. The associated magnetic hysteresis loops are obtained by vibrating sample magnetometer for temperatures ranging from - 100 to 300\&nbsp;{\textdegree}C. Hence, the parameters\&nbsp;α, β, Bmax,\&nbsp;HC, and\&nbsp;Br\&nbsp;defining a hysteresis loop are determined at each temperature using Preisach model for the first two parameters, while the remaining ones are deduced experimentally. The set of these parameters are introduced within the training data set in the context of an ANFIS-based approach to predict the hysteresis loop of a Ni/NiO/Ni multilayer for any temperature below the Curie temperature. The comparison conducted between theoretical and experimental results showed a good agreement. This work provided more insights regarding the consolidation of experimental characterization with the development of soft computing-based frameworks.

},
	url = {https://link.springer.com/article/10.1007/s00339-018-2349-z},
	author = {Bendjerad, Adel and Benhaya, Abdelhamid and Bentercia, Toufik and Fay{\c c}al Djeffal and Zergoug, M and Smaili, F}
}
