@mastersthesis {5358,
	title = {Contribution to study and modeling of the nanoscale multi-gate transistor using neural and evolutionary techniques},
	year = {2018},
	type = {Doctorat},
	abstract = {
	La miniaturisation des dimensions du transistor {\'e}tait le facteur principal et le plus important menant aux am{\'e}liorations des performances et du co{\^u}t du circuit int{\'e}gr{\'e} contribuant au d{\'e}veloppement rapide de l{\textquoteright}industrie des semi-conducteurs. Dans cette th{\`e}se, nous proposons tout d{\textquoteright}abord une nouvelle structure MOSFET {\`a} double grille sans jonction (DGJL) bas{\'e}e {\`a} la fois sur la grille double mat{\'e}riaux et les extensions fortement dop{\'e}es li{\'e}es aux drain et source. Des mod{\`e}les analytiques associ{\'e}s au courant de drain, aux param{\`e}tres de performance analogique et radiofr{\'e}quence (RF) sont d{\'e}velopp{\'e}s en incorporant l{\textquoteright}impact d{\textquoteright}une grille {\`a} deux mat{\'e}riaux et deux r{\'e}gions d{\textquoteright}extension fortement dop{\'e}es sur les performances analogique/RF du MOSFET DGJL. Les facteurs de m{\'e}rite (FOM) du transistor, qui r{\'e}gissent le comportement analogique/RF, sont {\'e}galement analys{\'e}es. Les r{\'e}sultats de notre {\'e}tude concernant les performances analogique/RF pour la structure propos{\'e}e sont discut{\'e}s et compar{\'e}s avec ceux d"un MOSFET DGJL conventionnel de dimensions similaires, o{\`u} le dispositif propos{\'e} pr{\'e}sente une excellente capacit{\'e} {\`a} am{\'e}liorer ces performances, et fournit un courant de drain plus {\'e}lev{\'e}. Les r{\'e}sultats d{\'e}livr{\'e}s sont valid{\'e}s par rapport aux donn{\'e}es obtenues {\`a} partir du logiciel TCAD pour une large gamme de param{\`e}tres de conception. De plus, les mod{\`e}les analytiques d{\'e}velopp{\'e}s ont {\'e}t{\'e} adopt{\'e}s comme une fonction objectif pour optimiser les performances analogique/RF du dispositif en utilisant les Algorithmes G{\'e}n{\'e}tiques (AGs). En comparaison avec les donn{\'e}es num{\'e}riques rapport{\'e}es pour la structure MOSFET en mode d"Inversion (IM), nos param{\`e}tres de performance optimis{\'e}s pour le dispositif JL pr{\'e}sentent une am{\'e}lioration en comparaison avec le dispositif en mode d{\textquoteright}inversion. Cette th{\`e}se s"occupe {\'e}galement de l{\textquoteright}immunit{\'e} du dispositif DG MOSFET sans jonctions envers l{\textquoteright}effet de d{\'e}gradation initi{\'e} par les porteurs chauds. En cons{\'e}quence, nous avons d{\'e}montr{\'e} que le DG MOSFET sans jonctions peut {\^e}tre un choix fiable pour am{\'e}liorer les performances relatives aux transistors MOSFET {\`a} l{\textquoteright}{\'e}chelle nanom{\'e}trique pour les applications num{\'e}riques.

},
	url = {http://eprints.univ-batna2.dz/1612/},
	author = {Elasaad Chebaki}
}
@mastersthesis {5356,
	title = {Contribution to the modeling and optimization of nanoscale VSG MOSFETs : Application to the nanoscale circuits design},
	year = {2018},
	author = {Abdelmalek Nidhal}
}
@mastersthesis {5353,
	title = {Etude et r{\'e}alisation d\&rsquo;un variateur de vitesse pour un moteur {\`a} courant continu},
	year = {2018},
	author = {Arioua Nasro}
}
@mastersthesis {5350,
	title = {Etude et r{\'e}alisation d\&rsquo;un onduleur polyphas{\'e} {\`a} commande num{\'e}rique},
	year = {2018},
	author = {Akakba Youness}
}
@mastersthesis {5349,
	title = {Etude et r{\'e}alisation d\&rsquo;un onduleur polyphas{\'e} {\`a} commande analogique MLI-sinus trianglaire},
	year = {2018},
	author = {Hadjira Ilyes amar}
}
@mastersthesis {5348,
	title = {R{\'e}alisation du circuit de commande d\&rsquo;un convertisseur statique {\`a} thyristor},
	year = {2018},
	author = {Mohammed cherif Okba}
}
@mastersthesis {5340,
	title = {Etude et simulation d\&$\#$39;une cellule solaire en couches minces {\`a} base de CIGS sous COMSOL},
	year = {2018},
	author = {Benchaira, Mohamed-Seghir-Massinissa}
}
@mastersthesis {5339,
	title = {Elaboration and characterization byb ellipsometry of thin layers of silicon dioxide},
	year = {2018},
	author = {Mahmoudi Abderrahmane}
}
@mastersthesis {5333,
	title = {Simulation, r{\'e}alisation et caract{\'e}risation d\&$\#$39;une structure Schottky},
	year = {2018},
	author = {Haddad Abdessamed}
}
@mastersthesis {5329,
	title = {Commande robuste appliqu{\'e}e {\`a} la navigation d\&$\#$39;un robot mobile},
	year = {2018},
	author = {Mallem Ali}
}
@mastersthesis {5326,
	title = {Etude et r{\'e}alisation d\&$\#$39;un ralentisseur electronique},
	year = {2018},
	author = {Hanachi Achref}
}
@mastersthesis {5325,
	title = {Etude et r{\'e}alisation d\&$\#$39;un convertisseur {\`a} bande},
	year = {2018},
	author = {Benhizia Amel}
}
@mastersthesis {5324,
	title = {Ralisation d\&$\#$39;un syst{\`e}me de suivi sans fil en temps r{\'e}el de la temp{\'e}rature d\&$\#$39;un patient},
	year = {2018},
	author = {Demagh, Fares Badreddine}
}
@mastersthesis {5317,
	title = {Etude d\&rsquo;une antenne microruban excit{\'e}e par une ligne imprim{\'e}e},
	year = {2018},
	author = {Bouraiou Abdelouahab}
}
@mastersthesis {5316,
	title = {Caract{\'e}risation d\&$\#$39;une antenne microbande coupl{\'e}e par une ouverture de forme rectangulaire. Application {\`a} la r{\'e}alisation d\&$\#$39;une antenne multi bande},
	year = {2018},
	author = {Chouti Leila}
}
@mastersthesis {5315,
	title = {Etude d\&rsquo;une antenne supraconductrice couverte par une couche di{\'e}lectrique},
	year = {2018},
	abstract = {
	L{\textquoteright}objectif de cette th{\`e}se est l{\textquoteright}analyse des antennes microrubans fabriqu{\'e}es {\`a} base de patchs parfaitement conducteurs et supraconducteurs avec et sans couche protectrice utilisant deux m{\'e}thodes diff{\'e}rentes : le mod{\`e}le de la cavit{\'e} bas{\'e} sur les connaissances {\'e}lectromagn{\'e}tiques et l{\textquoteright}approche spectrale conjointement avec les conditions aux limites de la r{\'e}sistivit{\'e} complexe. La premi{\`e}re m{\'e}thode est choisie puisque, contrairement aux m{\'e}thodes rigoureuses, elle fournit une compr{\'e}hension qualitative en plus de requ{\'e}rir des d{\'e}veloppements math{\'e}matiques relativement courts. La deuxi{\`e}me m{\'e}thode est r{\'e}serv{\'e}e {\`a} l{\textquoteright}{\'e}tude des caract{\'e}ristiques de r{\'e}sonance d{\textquoteright}un patch microbande circulaire supraconducteur {\`a} haute temp{\'e}rature critique avec une couche protectrice. Des r{\'e}sultats num{\'e}riques sont pr{\'e}sent{\'e}s pour le mode fondamental aussi bien que pour les modes d{\textquoteright}ordre sup{\'e}rieur. Une {\'e}tude param{\'e}trique est men{\'e}e pour quantifier l{\textquoteright}influence de certains param{\`e}tres {\'e}lectriques et physiques sur les performances de l{\textquoteright}antenne en tenant compte de l{\textquoteright}anisotropie uniaxiale dans le di{\'e}lectrique. Les r{\'e}sultats num{\'e}riques de chaque structure sont compar{\'e}s aux donn{\'e}es th{\'e}oriques et exp{\'e}rimentales report{\'e}es dans la litt{\'e}rature ouverte.

},
	url = {http://eprints.univ-batna2.dz/1625/},
	author = {Bedra , Randa}
}
@mastersthesis {5314,
	title = {Analysis by the full wave approach of patch resonators embedded in multilayered medium containing isotropic dielectrics, anisotropic substances and chiral materials},
	year = {2018},
	author = {BentrciaYoussouf}
}
@mastersthesis {5311,
	title = {Etude de la propagation dans un canal physique pour GSM et UMTS},
	year = {2018},
	author = {A.Aziz Bentouati and Houssam Eddine Zaoui}
}
@mastersthesis {5306,
	title = {Mod{\'e}lisation de la propagation des micro-ondes acoustiques dans les mat{\'e}riaux pi{\'e}zo{\'e}lectriques},
	year = {2018},
	author = {CHIBA FARID}
}
@mastersthesis {5303,
	title = {Etude et Conception des antennes planaires pour les applications ULB},
	year = {2018},
	author = {HAFDAOUI Amira and CHEHAOUI Nora}
}
@mastersthesis {5298,
	title = {Contribution {\`a} l\&rsquo;{\'e}tude et {\`a} la conception des commandes des onduleur},
	year = {2018},
	type = {Doctorat},
	abstract = {
	Les onduleurs sont des convertisseurs DC-AC de plus en plus utilis{\'e}s dans les syst{\`e}mes {\'e}nerg{\'e}tiques, en particulier dans les {\'e}nergies renouvelables. Pour cela, les onduleurs doivent utiliser l{\textquoteright}{\'e}nergie disponible de mani{\`e}re efficace. Ils doivent donc avoir une efficacit{\'e} et une fiabilit{\'e} {\'e}lev{\'e}es. De plus, les performances de ces syst{\`e}mes sont mesur{\'e}es par leur efficacit{\'e}, forme d{\textquoteright}onde et distorsion harmonique de la sortie, et enfin leur co{\^u}t, qui d{\'e}pendent du choix optimal des composants et de la strat{\'e}gie de contr{\^o}le. Dans cette th{\`e}se, nous {\'e}tudierons certaines structures et strat{\'e}gies de contr{\^o}le, en nous concentrant davantage sur la r{\'e}duction de la distorsion harmonique totale (THD). La r{\'e}duction du THD dans les inverseurs multiniveaux n{\'e}cessite la r{\'e}solution d{\textquoteright}{\'e}quations transcendantales non lin{\'e}aires complexes. Sans avoir {\`a} r{\'e}soudre ces {\'e}quations, nous avons propos{\'e} d{\textquoteright}utiliser le r{\'e}cent algorithme firefly (FFA) pour optimiser le THD, en trouvant les meilleurs angles de commutation et en garantissant la minimisation des harmoniques dans une bande passante pr{\'e}d{\'e}finie par l{\textquoteright}utilisateur. Le FFA a {\'e}t{\'e} compar{\'e} {\`a} certains algorithmes largement utilis{\'e}s existants tels que l{\textquoteright}algorithme g{\'e}n{\'e}tique (GA), et a montr{\'e} une convergence plus rapide. Nous avons {\'e}galement choisi d{\textquoteright}utiliser l{\textquoteright}une des meilleures structures mat{\'e}rielles optimis{\'e}es existantes, o{\`u} nous avons valid{\'e} les r{\'e}sultats de la simulation par des tests pratiques. Nous insistons sur le fait que la meilleure conception seule ou la meilleure strat{\'e}gie de contr{\^o}le seule ne peut pas r{\'e}soudre le probl{\`e}me THD {\`a} un co{\^u}t raisonnable. Il est imp{\'e}ratif d{\textquoteright}aborder les deux sujets en m{\^e}me temps. La THD obtenu gr{\^a}ce {\`a} la simulation de l{\textquoteright}onduleur sym{\'e}trique de treize niveaux a {\'e}t{\'e} r{\'e}duite {\`a} 5\% (FFT de 60 harmoniques). Afin de valider les r{\'e}sultats de la simulation, un prototype d{\textquoteright}onduleur sym{\'e}trique de treize niveaux a {\'e}t{\'e} r{\'e}alis{\'e} et pratiquement exp{\'e}riment{\'e} et test{\'e} avec diff{\'e}rentes charges. Par cons{\'e}quent, la THD mesur{\'e}e avec une charge r{\'e}sistive {\'e}tait de 4,7\% sur une bande passante de 3 kHz.

},
	url = {http://eprints.univ-batna2.dz/1656/},
	author = {El Mehdi Belkacem, RIADH}
}
@mastersthesis {5296,
	title = {Etude et mod{\'e}lisation des photopiles de troisi{\`e}me g{\'e}n{\'e}ration },
	year = {2018},
	author = {Lakehal Brahim}
}
@mastersthesis {5295,
	title = {Conception d\&rsquo;un Nez Electronique},
	year = {2018},
	author = {KHALDI Samia}
}
@mastersthesis {5275,
	title = {Conception d\&$\#$39;un MDAC pour CAN pipeline 8 bits},
	year = {2018},
	author = {Tamma Ahmed Yassine}
}
@proceedings {4653,
	title = {Structural and magnetic study of the influence of the thickness on multilayer (Ni/NiO) deposits at room temperature},
	journal = {International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2018},
	url = {https://ieeexplore.ieee.org/document/8634552},
	author = {Bendjerad Adel}
}
@proceedings {4645,
	title = {Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications},
	journal = {ICSENT },
	year = {2018},
	url = {https://doi.org/10.1145/3330089.3330470},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4644,
	title = {Device and Circuit Level Performance Analysis of a NewNanoscale DGJL MOSFET Design Using an AccurateNumerical Computation},
	journal = {ICSENT },
	year = {2018},
	url = {https://doi.org/10.1145/3330089.3330471},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4643,
	title = {Simulation and analysis of Graphene-based nanoelectronic circuits using ANN method},
	journal = {NN17},
	year = {2018},
	url = {https://doi.org/10.1016/j.matpr.2018.05.039},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4642,
	title = {ANFIS-based Approach to Predict the Degradation-related Ageing ofJunctionless GAA MOSFET},
	journal = {NN17},
	year = {2018},
	url = {https://doi.org/10.1016/j.matpr.2018.05.038},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4633,
	title = {Improved Sliding Mode Controller Using Backstepping and Fuzzy Logic for a Quadrotor Aircraft},
	journal = {International Symposium on Mechatronics and Renewable Energies (ISMRE{\textquoteright}2018)},
	year = {2018},
	author = {Y. Aoun}
}
@proceedings {4621,
	title = {Artifact removal from electrocardiogram signal: A comparative study S},
	journal = {2018 International Conference on Signal, Image, Vision and their Applications, SIVA 2018 },
	year = {2018},
	url = {https://ieeexplore.ieee.org/document/8661013/},
	author = {Belkacem Samia}
}
@article {4090,
	title = {A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis, ISSN 168-9002},
	journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
	volume = {volume 901},
	year = {2018},
	pages = {pp 32-39},
	abstract = {In this paper, a new radiation sensitive\&nbsp;field-effect Transistor\&nbsp;(RADFET)\&nbsp;dosimeter\&nbsp;design based on armchair-edge graphene nanoribbon (AGNR), for high performance low-dose monitoring applications, is proposed through a\&nbsp;quantum simulation\&nbsp;study. The simulation approach used to investigate the proposed\&nbsp;nanoscale\&nbsp;RADFET is based on solving the Schr{\"o}dinger equation using the mode space (MS) non-equilibrium Green{\textquoteright}s function (NEGF) formalism coupled self-consistently with a two dimensional (2D)\&nbsp;Poisson equation\&nbsp;under the ballistic limits. The responsiveness of the proposed RADFET to the modulation of radiation-induced trapped charge densities is reflected via the\&nbsp;threshold voltage, which is considered as a sensing parameter. The dosimeter behavior is investigated, and the impact of variation in physical and geometrical parameters on the dosimeter sensitivity is also studied. In comparison to other RADFETs designs, the proposed radiation sensor provides higher sensitivity and better scalability, which are the main requirements for futuristic dosimeters. The obtained results make the suggested RADFET dosimeter as a viable and attractive replacement to silicon-based MOS dosimeters.},
	url = {https://www.sciencedirect.com/science/article/pii/S0168900218307046},
	author = {KhalilTamersit and Djeffal Fay{\c c}al}
}
@article {4075,
	title = {Characterizing Slow state Near Si-SiO2 in MOS structure},
	journal = {Phosphorus Sulfur and Silicon and the Related Elements},
	volume = {193},
	number = {2},
	year = {2018},
	pages = {88-91},
	abstract = {The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).},
	url = {https://www.researchgate.net/publication/321845704_Characterizing_Slow_state_Near_Si-SiO_2_in_MOS_structure},
	author = {Naima Guenifi and Bauza, Daniel and R amdane Mahamdi}
}
@article {4074,
	title = {Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D},
	journal = {Phosphorus, Sulfur, and Silicon and the Related Elements },
	volume = {193},
	number = {2},
	year = {2018},
	pages = {92-97},
	abstract = {
	The article introduces the benefits and application features of Silvaco Technology Computer Aided Design{\textquoteleft}TCAD{\textquoteright} tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed

},
	url = {https://www.researchgate.net/publication/321813643_Boron_Phosphorus_and_Arsenic_Diffusion_in_MOS_transistors_Simulation_and_Analyze_in_Both_2D_and_3D},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@article {4073,
	title = {An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab},
	journal = { Phosphorus, Sulfur, and Silicon and the Related Elements },
	volume = {193},
	number = {2},
	year = {2018},
	pages = {98-103},
	abstract = {
	In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick{\textquoteright}s equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.

},
	url = {https://www.researchgate.net/publication/321843791_An_algorithm_for_boron_diffusion_in_MOS_transistors_using_Silvaco_Athena_and_MATLAB},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@article {4054,
	title = { Role of non-uniform Ge concentration profile in enhancing the efficiency of thin-film SiGe/Si Solar Cells, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 158},
	year = {2018},
	pages = {pp 192-198},
	abstract = {
	
		In this paper, graded Ge mole fraction aspect is proposed as a new way to achieve the dual benefit of improved Si/SiGe-based solar cell photoconversion efficiency and suppressed degradation related-dislocation effects. Our purpose resides mainly on decreasing the defect density at the Si/SiGe interface through shifting the Ge concentration gradually with the SiGe absorber layer thickness. Further, a careful mechanism analysis based on investigating numerically the impact of the proposed graded Ge content paradigm on reducing the degradation related-dislocation effect is performed. The advantage of using a SiGe layer with graded Ge concentration instead of a thin-film SiGe alloys is presented. Moreover, the impact of the proposed SiGe layer thickness on the solar cell conversion efficiency is carried out. It is found that the proposed feature brings the opportunity of reducing the lattice mismatch at the Si/SiGe interface, which can in turn improve the Si/SiGe-based solar cell conversion efficiency. In addition, increasing the Ge content progressively suggests the band-gap modulation aspect that enables improving the solar cell optical absorption and the total resistance. Therefore, the proposed design pinpoints a new path toward avoiding recombination losses through suppressing the degradation related-dislocation effects, which makes it potential alternative for providing high-efficiency Si-based solar cells.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402617317187},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4053,
	title = {Optimizing the optical performance of ZnO/Si-based solar cell using metallic nanoparticles and interface texturization, ISSN 0030-4026},
	journal = {Optik - International Journal for Light and Electron Optics},
	volume = {Volume 153},
	year = {2018},
	pages = {pp 43-49},
	abstract = {
	
		In this paper, we propose a new n-ZnO/p-Si hetero-junction solar cell design based on both interface engineering and metallic nanoparticles aspects. The merits of using both metallic nanoparticles and grooves morphology in the ZnO/p-Si interface to improve solar cell optical performance are investigated numerically using accurate solutions of Maxwell{\textquoteright}s equations. It is found that the proposed structure suggests the possibility to achieve the dual role of improved light-scattering in the Si absorber layer as well as enhancing the absorption in the ZnO thin-film through the Surface Plasmon Resonance effect. Besides, the proposed design exhibits superior optical performance and offers improved total absorbance efficiency (TAE) as compared to the conventional counterpart. Moreover, particle swarm optimization (PSO)-based approach is exploited for the geometrical optimization of the proposed design to achieve higher light trapping capability. It is found that the optimized design yields 50\% of relative improvement in the ZnO/p-Si-based solar cell TAE which confirms excellent capability of the proposed design approach for modulating the electric field behavior inside the solar cell structure. The obtained results indicate that the optimized n-ZnO/p-Si hetero-junction solar cell offer the potential for high conversion efficiency at low costs which make it valuable for photovoltaic application.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S003040261731197X},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Kalinka Kacha}
}
@article {4052,
	title = {Graded band-gap engineering for increased efficiency in CZTS solar cells, ISSN / e-ISSN 0925-3467 / 1873-1252},
	journal = {Optical Materials},
	volume = {Volume 76},
	year = {2018},
	pages = {pp 393-399},
	abstract = {In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9\% is recorded for the optimized solar cell with a relative improvement of 92\%, compared with the reference cell efficiency of 8.8\%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889\&nbsp;mV, a short-circuit current of 28.5\&nbsp;mA and a fill factor of 66\%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925346718300077},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4051,
	title = {Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 17},
	number = {Issue 1},
	year = {2018},
	pages = {pp 129-137},
	abstract = {In this paper, a graded channel doping paradigm is proposed to improve the nanoscale double gate junctionless DGJL MOSFET electrical performance. A careful mechanism study based on numerical investigation and a performance comparison between the proposed and conventional design is carried out. The device figures-of-merit, governing the switching and leakage current behavior are investigated in order to reveal the transistor electrical performance for ultra-low power consumption. It is found that the channel doping engineering feature has a profound implication in enhancing the device electrical performance. Moreover, the impact of the high-k gate dielectric on the device leakage performance is also analyzed. The results show that the proposed design with gate stacking demonstrates superior ION/IOFF ratio and lower leakage current as compared to the conventional counterpart. Our analysis highlights the good ability of the proposed design including a high-k gate dielectric for the reduction of the leakage current. These characteristics underline the distinctive electrical behavior of the proposed design and also suggest the possibility for bridging the gap between the high derived current capability and low leakage power. This makes the proposed GCD-DGJL MOSFET with gate stacking a potential alternative for high performance and ultra-low power consumption applications.},
	url = {https://link.springer.com/article/10.1007/s10825-017-1052-1},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4050,
	title = {Role of intermediate metallic sub-layers in improving the efficiency of kesterite solar cells: concept and optimization, ISSN / e-ISSN 2053-1591 / 2053-1591},
	journal = { Materials Research Express},
	volume = {Volume 5},
	number = {N{\textdegree} 3},
	year = {2018},
	pages = {pp 036417},
	abstract = {In this work, versatile CdS/Cu  2  ZnSnS  4 (CZTS) solar cell designs based on intermediate metallic sub-layers (Au, Ti, and Ag) engineering are proposed for enhancing light-scattering behavior and reducing recombination losses. The idea behind this work is to generate optical confinement regions in the CZTS absorber layer to achieve an improved absorption and appropriate antireflection effects. Moreover, the ultra-thin metal at the CZTS/Mo interface can be helpful for reducing the series resistance, where it behaves like a blocking layer for the Sulfur diffusion. We further combine the proposed designs with Particle Swarm Optimization (PSO)-based approach to achieve broadband absorption and boost the conversion efficiency. It is found that the optimized design with Ti sub-layer improves the CZTS solar cell properties, where it yields 31\% improvement in short-circuit current and 60\% in the power efficiency over the conventional one. Therefore, the optimized designs provide the opportunity for bridging the gap between improving the optical behavior and reducing the recombination losses.},
	url = {https://iopscience.iop.org/article/10.1088/2053-1591/aab7ae/meta},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4049,
	title = {Role of Graded Channel Doping Engineering in Improving Junctionless GAA MOSFET Performance for Ultra Low-Leakage Power Applications, ISSN / e-ISSN 1555-130X / 1555-1318},
	journal = { Journal of Nanoelectronics and Optoelectronics},
	volume = {Volume 13},
	number = {N{\textdegree} 4},
	year = {2018},
	pages = {pp 521-530},
	abstract = {In this paper, channel doping engineering aspect is proposed as a new way to improve the junctionless Gate All Around (GAA) MOSFET performance for digital and analog applications. The amended channel doping consists of a lateral graded profile, where the channel is divided into two regions with different doping levels. Analytical approaches for the drain current, leakage power, digital and small signal parameters are developed incorporating the impact of graded channel doping (GCD) paradigm on the device electrical behavior. Exhaustive study based on a performance comparison between the proposed structure and the conventional one is carried out, where the proposed design exhibits a good capability in improving the overall device figures-of-merit (FoMs), governing the leakage and the analog performance. More importantly, Particle Swarm Optimization (PSO) approach is proposed as a metaheuristic technique to boost the device performance through carefully adjusting the design parameters of the proposed GCD feature. It is found that the optimized design outperforms considerably the conventional counterpart and enable making wise trade-offs, where an enhancement of 300\% in the I ON /I OFF ratio, 482\% in the intrinsic gain, and 340\% in the cut-off frequency has been reached. Besides, the proposed design provides a sufficient capability for suppression of the leakage effects. The obtained results underline the distinctive property of the proposed design for bridging the gap between high analog and digital performances with ultra-low power consumption. This makes the proposed design a potential alternative for ultra-low power and high electrical performance applications.},
	url = {https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000004/art00011},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4048,
	title = {Boosting the optical performance and commutation speed of phototransistor using SiGe/Si/Ge tunneling structure, ISSN / e-ISSN 2053-1591 / 2053-1591},
	journal = { Materials Research Express},
	volume = {Volume 5},
	number = { N{\textdegree} 6},
	year = {2018},
	pages = {pp 065902},
	abstract = {In this paper, a new optically controlled tunneling field effect transistor (OC-TFET) based on SiGe/Si/Ge hetero-channel is proposed to improve optical commutation speed and reduce power consumption. An exhaustive study of the device switching behavior associated with different hetero-channel structures has been carried out using an accurate numerical simulation. Moreover, a new figure of Merit (FoM) parameter called optical swing factor that describes the phototransistor optical commutation speed is proposed. We demonstrate that the band-to-band tunneling effect can be beneficial for improving the device optical commutation speed. The impact of the Ge mole fraction of the SiGe source region on the device FoMs is investigated. It is found that the optimized design with 40\% of Ge content offers the opportunity to overcome the trade-off between ultrafast and very sensitive photoreceiver performance, where it yields 48 mV/dec of optical swing factor and 155 dB of I  ON /I  OFF  ratio. An overall performance comparison between the proposed OC-TFET device and the conventional designs is performed, where the proposed structure ensures high optical detectivity for very low optical powers (sub-1pW) as compared to that of the conventional counterparts. Therefore, the proposed OC-TFET provides the possibility for bridging the gap between improved optical commutation speed and reduced power consumption, which makes it a potential alternative for high-performance inter-chip data communication applications.},
	url = {https://iopscience.iop.org/article/10.1088/2053-1591/aac756/meta},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4047,
	title = {Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Vloume. 17},
	number = { Issue 2},
	year = {2018},
	pages = {pp 724-735},
	abstract = {A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1141-9},
	author = {Abdelmalek Nidhal and Djeffal Fay{\c c}al and Bentrcia Toufik}
}
@article {4046,
	title = {The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability, ISSN / e-ISSN 2190-4286 / 2190-4286},
	journal = {Beilstein Journals of Nanotechnology},
	volume = {Volume 9},
	year = {2018},
	pages = {pp 1856-1862},
	abstract = {In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si1-xGex/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si1-xGex material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolar conduction is investigated. Moreover, the impact of the Ge mole fraction in the proposed Si1-xGex source region on the electrical figures of merit (FoMs) of the transistor, including the swing factor and the ION/IOFF ratio is analyzed. It is found that the optimized design with 60 atom \% of Ge offers improved switching behavior and enhanced derived current capability at the nanoscale level, with a swing factor of 42 mV/dec and an ION/IOFF ratio of 115 dB. Further, the scaling capability of the proposed Si1-xGex/Si/Ge DG-HJ-JL TFET structure is investigated and compared to that of a conventional Ge-DG-JL TFET design, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.},
	url = {https://www.beilstein-journals.org/bjnano/articles/9/177},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Bentrcia Toufik}
}
@article {4045,
	title = {Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects, Journal of Nanoelectronics and Optoelectronics, ISSN / e-ISSN 1555-130X / 1555-1318},
	journal = { Journal of Nanoelectronics and Optoelectronics},
	volume = {Volume 13},
	number = {N{\textdegree} 7 },
	year = {2018},
	pages = {pp 1106-1113},
	abstract = {In this work, we present a comprehensive investigation of JL-GAA MOSFET including degradation-related ageing effects to study the nanoscale JL-GAA MOSFET reliability against the ageing phenomenon. A quantitative analysis of the device reliability behavior is carried out, in order to show the impact of the ageing effects on the device performance for digital applications. Moreover, the effect of the stress time on the device subthreshold behavior including the threshold voltage, DIBL and swing factor is elucidated, where the degradation related-ageing effects is represented by a new current generator in the opposite direction that describes the exponential degradation of the current as function of the stress time. Further, the role of introducing a high-k layer on the gate oxide in improving the JL-GAA MOSFET immunity against the degradation-related ageing effects is analyzed, where the proposed structure exhibits an excellent immunity against the ageing effects. In order to show the impact of the proposed approach on the nanoelectronic circuits designing, the developed model has been implemented to study the performance behavior of voltage amplifier circuit including degradation-related ageing effects. Therefore, the proposed approach can offer new insights regarding the investigation and simulation of the nanoelectronic circuits including the degradation-related ageing effects.},
	url = {https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000007/art00020},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4044,
	title = {A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube, ISSN / e-ISSN 0263-2241 / 1873-412X},
	journal = {Measurement},
	volume = {Volume 125},
	year = {2018},
	pages = {pp 232-242},
	abstract = {This paper presents a new nanoforce sensor based on a suspended carbon nanotube gate field-effect transistor. To do so, a numerical investigation of Suspended Gate Silicon-on-Insulator MOSFET (SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube{\textquoteright}s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the saturation region. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on artificial neural networks (ANNs). We successfully integrate our neural model of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on neural networks, which deals with correction and linearization of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.},
	url = {https://www.sciencedirect.com/science/article/pii/S0263224118303452},
	author = {F.Menacer and Dibi Zohir and A.Kadri and Djeffal Fay{\c c}al}
}
@article {4043,
	title = {Enhanced optical and electrical performances of UV-phototransistor using graded band-gap ZnMgO photosensitive gate, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 17},
	number = { Issue 3},
	year = {2018},
	pages = {pp 1181{\textendash}1190},
	abstract = {In this work, a new ultraviolet optically-controlled field-effect transistor (UV-OCFET) based on ZnMgO photosensitive gate with graded band-gap aspect is proposed and investigated using a comprehensive analytical modeling. The impact of different band-gap profiles on the phototransistor figure of merits (FoMs) is analyzed. Our study demonstrates that the use of ZnMgO with a graded band-gap profile can generate an electric field in the photosensitive layer, which leads to achieve the dual role of effective electron/hole pair separation and lower recombination losses. Moreover, increasing the Mg content progressively not only enables a strong UV-light absorption but also allows achieving a high optical sensitivity for very low optical powers (sub-1pW). The particle-swarm optimization approach is exploited to boost the phototransistor FoMs by optimizing the sensor design parameters and the ZnMgO band-gap profile. It is found that the optimized structure exhibits superior optical characteristics as compared to those of the conventional UV-photodetectors. Therefore, the optimized ZnMgO UV-OCFET with graded band-gap paradigm pinpoints a new path toward recording an ultrasensitive phototransistor compatible with CMOS modern technology. This makes it a potential alternative for high-performance and low-energy consumption chip-level UV-communication and monitoring applications.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1211-z},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4040,
	title = {Role of ITO ultra-thin layer in improving electrical performance and thermal reliability of Au/ITO/Si/Au structure: An experimental investigation, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {120},
	year = {2018},
	pages = {419-426 },
	abstract = {
	In this paper, the role of introducing an intermediate Indium Tin Oxide (ITO) thin-film in improving the Au/Si Schottky Barrier Diodes (SBDs) electrical performance is experimentally analyzed. The Au/ITO/Si/Au structures with different ITO thicknesses were fabricated using RF magnetron sputtering technique. The current-voltage (I-V) characteristics of the investigated structures are analyzed, where the device electrical parameters are extracted. It is found that the introduced ITO thin-film has a significant impact in reducing the ideality factor (n=1.25), the interfacial defects (Nss=1.5{\texttimes}1012 eV-1cm-2) and the series resistance (Rs=32Ω). Our study demonstrates that the use of ITO intermediate thin-film can generate minority carrier injection effects, which lead to achieve the dual role of enhanced derived current and lower series resistance. Moreover, the structure thermal stability behavior is investigated and compared with those of the conventional design in order to reveal the device reliability against the thermal variation. Furthermore, the effect of the annealing on the device thermal stability is also analyzed. Our investigation shows that the annealed structure provides the possibility for avoiding the degradation related-heating effects. Therefore, the proposed Au/ITO/Si/Au structure offers the opportunity for bridging the gap between achieving superior electrical performance and enhanced thermal stability. The obtained results may facilitate the design of high-performance SBDs for sensing and microelectronic applications.

},
	url = {https://www.researchgate.net/publication/325553017_Role_of_ITO_ultra-thin_layer_in_improving_electrical_performance_and_thermal_reliability_of_AuITOSiAu_structure_An_experimental_investigation},
	author = {Benhaya, Abdelhamid and Fay{\c c}al Djeffal and Kalinka Kacha and Hichem Ferhati and Bendjerad, Adel}
}
@article {4034,
	title = {Fuzzy Logic Controller using the Nonholonomic Constraints for Quadrotor Trajectory Tracking, e-ISSN  2600-7029},
	journal = {Revue des sciences et sciences de l{\textquoteright}ing{\'e}nieur},
	volume = {Volume 6},
	number = {N{\textdegree} 2},
	year = {2018},
	pages = {pp 51-59 },
	author = {Medjghou Ali and Slimane Noureddine and Chafaa Kheireddine}
}
@article {4033,
	title = {Disturbances Elimination with Fuzzy Sliding Mode Control for Mobile Robot Trajectory Tracking, ISSN / e-ISSN 1336-1376 / 1804-3119},
	journal = {Advances in Electrical and Electronic Engineering},
	volume = {Volume 16},
	number = {N{\textdegree} 3},
	year = {2018},
	pages = {pp 297-310},
	abstract = {The disturbances are the significant issue for the trajectory tracking of mobile robots. Therefore, an adequate control law is presented in this paper and this one is based on Global Terminal Sliding Mode (GTSM) with fuzzy control. This control law aims to guarantee the avoidance of the kinematic disturbances which are injected in the angular and linear velocities, respectively. Moreover, the dynamic model based on exponential reaching law is presented to avoid the uncertainties. The control law provides the asymptotic stability by taking into account the fuzzy rules and Lyapunov theory. Thus, the chattering phenomenon should be avoided. The simulation works prove the robustness of the proposed control law by considering the disturbances function and the robot can follow the desired trajectories.},
	url = {https://www.researchgate.net/publication/327850791_Disturbances_Elimination_with_Fuzzy_Sliding_Mode_Control_for_Mobile_Robot_Trajectory_Tracking},
	author = {Benaziza Walid and Slimane Noureddine and Mallem Ali}
}
@article {4032,
	title = {PD Terminal Sliding Mode Control Using Fuzzy Genetic Algorithm for Mobile Robot in Presence of Disturbances, ISSN / e-ISSN 1897-8649 / 2080-2145},
	journal = {Journal of automation, Mobile robotics \&intelligent systems},
	volume = {Volume 12},
	number = {N{\textdegree}2},
	year = {2018},
	pages = {pp 52-60 },
	abstract = {This paper presents a new approach in the field of trajectory tracking for nonholonomic mobile robot in presence of disturbances. The proposed control design is constructed by a kinematic controller, based on PD sliding surface using fuzzy sliding mode for the angular and linear velocities disturbances, in order to tend asymptotically the robot posture error to zero. Thereafter a dynamic controller is presented using as a sliding surface design, a fast terminal function (FTF) whose parameters are generated by a genetic algorithm in order to converge the velocity errors to zero in finite time and guarantee the asymptotic stability of the system using a Lyapunov candidate. The elaborated simulation works in the case of different trajectories confirm the robustness of the proposed approach.},
	url = {https://www.researchgate.net/publication/326800887_PD_terminal_sliding_mode_control_using_fuzzy_genetic_algorithm_for_mobile_robot_in_presence_of_disturbances},
	author = {Benaziza Walid and Slimane Noureddine and Ali Mallem}
}
@article {4031,
	title = {Fuzzy sliding mode control based on backstepping synthesis for unmanned quadrotors, ISSN / e-ISSN 1336-1376 / 1804-3119},
	journal = {Advances in Electrical and Electronic Engineering},
	volume = {volume 16},
	number = {issue 2},
	year = {2018},
	pages = {pp 135-146},
	abstract = {The main purpose of this paper is to integrate fuzzy logic technique and backstepping synthesis to sliding mode control to develop a Fuzzy Backstepping-Sliding Mode Controller (FBSMC) to resolve the problem of altitude and attitude tracking control of unmanned quadrotor systems under large external disturbances. First, a backstepping-sliding mode control for quadrotor is introduced. Moreover, a fuzzy logic system is employed to adapt the unknown switching gains to eliminate the chattering phenomenon induced by switching control on the conventional Backstepping-Sliding Mode Controller (BSMC). The dynamical motion equations are obtained by Euler-Newton formalism. The stability of the system is guaranteed in the sense of the Lyapunov stability theorem. Simulation results are carried out using Matlab/Simulink environment to illustrate the effectiveness and robustness of the proposed controller.},
	url = {http://advances.utc.sk/index.php/AEEE/article/view/2231},
	author = {Medjghou Ali and Slimane Noureddine and Chafaa Kheireddine}
}
@article {4029,
	title = {Robust control of mobile robot in presence of disturbances using neural network and global fast sliding mode, ISSN / e-ISSN 1064-1246 / 1875-8967},
	journal = {Journal of Intelligent And Fuzzy Systems},
	volume = {Volume 34},
	number = {N{\textdegree} 6},
	year = {2018},
	pages = {pp 4345-4354},
	abstract = {In this paper a dynamic tracking control of mobile robot using neural network global fast sliding mode (NN-GFSM) is presented. The proposed strategy combines two control approaches, kinematic control and dynamic control. The laws of kinematic control are based on GFSM in order to determine the adequate velocities for the system stability in finite time. The dynamic controller combines two control techniques, the GFSM to stabilize the velocities errors, and a neural network controller in order to approximate a nonlinear function and to deal the disturbances. This dynamic controller allows the robots to follow the desired trajectory even in the presence of disturbances. The designed controller is dynamically simulated by using Matlab/ Simulink and the simulations results show the efficiency and robustness of the proposed control strategy. },
	url = {https://content.iospress.com/articles/journal-of-intelligent-and-fuzzy-systems/ifs17864},
	author = {Mallem Ali and Slimane Noureddine and Benaziza Walid}
}
@article {4022,
	title = {Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates, ISSN / e-ISSN 2077-6772 / 2306-4277},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {volume 10},
	number = {N{\textdegree}4},
	year = {2018},
	pages = {pp  04004-1-04004-4},
	abstract = {A complete parametric study of stacked rectangular microstrip patches printed on non-magnetic isotropic substrate is performed. The numerical results are obtained by applying the method of moments to the electric field integral equations. Detailed closed-form expressions of Green{\textquoteright}s functions are presented. The new results found indicate that, the lower resonant frequency is mainly determined by the patch etched on the thicker layer. The layer having the higher permittivity defines which resonance is mainly determined by the bottom patch, either the upper resonance if the upper layer has the higher permittivity, or the lower resonance in opposite case. All these results offer better understanding and thus a better control of the dual-band operating of the microstrip antenna. Therefore, a proper choice of the antenna parameters becomes possible in order to obtain the desired functional characteristics.},
	url = {https://www.researchgate.net/publication/327284531_Parametric_Study_of_Stacked_Microstrip_Patch_Antenna_with_Dissimilar_Substrates},
	author = {Bouttout Sarah and BentrciaYoussouf and Benkouda Siham and Fortaki Tarek}
}
@article {4014,
	title = {Analysis of HTS circular patch antennas including radome effects. International Journal of Microwave and Wireless Technologies},
	journal = {International Journal of Microwave and Wireless Technologies},
	volume = {10},
	number = {7},
	year = {2018},
	pages = {843-850},
	abstract = {
	
		
			
				
					In this paper, the resonant frequencies, quality factors and bandwidths of high Tc superconducting circular microstrip patches in the presence of a dielectric superstrate loading have been studied using Galerkin testing procedure in the Hankel transform domain. The exact Green{\textquoteright}s function of the grounded dielectric slab is used to derive an electric field integral equation for the unknown current distribution on the circular disc. Thus, surface waves, as well as space wave radiation, are included in the formulation. London{\textquoteright}s equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. Galerkin testing is used in the resolution of the electric field integral equation. Two solutions using two different basis sets to expand the unknown disk currents are developed. The first set of basis functions used is the complete set of transverse magnetic and transverse electric modes of a cylindrical cavity with magnetic side walls. The second set of basis functions used employ Chebyshev polynomials and enforce the current edge condition. The computed values for a wide range of variations of superstrate thickness and dielectric constant are compared with different theoretical and experimental values available in the open literature, showing close agreement. Results are showing that the superstrate parameters should always be kept into account in the design stage of the superconducting microstrip resonators.
				
			
		
	



	\&nbsp;

},
	url = {https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/analysis-of-hts-circular-patch-antennas-including-radome-effects/BA2F048969B099808D2FDBAC4487CC8A$\#$},
	author = {Bedra, Sami and Bedra , Randa and Benkouda , Siham and Fortaki , Tarek}
}
@article {4008,
	title = {Spectral domain analysis of rectangular stacked patches printed on a substrate characterized by dielectric and magnetic anisotropy, e-ISSN 1572-8137},
	journal = {Journal of Computational Electronics },
	volume = {Volume 17 },
	number = {N{\textdegree}1},
	year = {2018},
	pages = {pp 399{\textendash}405},
	abstract = {Spectral domain formulation is provided for the analysis of rectangular stacked patches printed on a substrate characterized by dielectric and magnetic uniaxial anisotropy. Detailed analytical expressions of the dyadic Green{\textquoteright}s functions are derived. Galerkin{\textquoteright}s procedure is applied to solve the electric field integral equations, and the resonance characteristics are determined by solving the characteristic equation. Numerical results show that the influence of the magnetic anisotropy on the resonant frequencies is highly dependent on the permeability of the medium, where for a non-magnetic medium, the impact of the existing anisotropy was found negligible. However, for a magnetic medium, the anisotropy has a large impact on the resonant frequencies. Moreover, the influence of each of the components of the permeability tensor has been also reported.},
	url = {https://link.springer.com/article/10.1007/s10825-017-1048-x},
	author = {BentrciaYoussouf and Bouttout Sarah and Benkouda Siham and Fortaki Tarek}
}
@article {3992,
	title = {A comparative study for two LiNbO3 cuts (Y-Z and Y-X) in detecting bulk acoustic microwaves using Probabilistic Neural Network},
	journal = {Engineering Science and Technology, an International Journal},
	volume = {21},
	number = {3},
	year = {2018},
	pages = {527-531},
	abstract = {
	This work is mainly on the detection of the bulk acoustic waves (BAWs), where we have compared two Lithium Niobate cuts (Y-Z and Y-X), during the propagation of the acoustic microwaves in the piezoelectric LiNbO3-substrate. In this paper, we have used the classification by Probabilistic Neural Network (PNN) as a tool for numerical analysis in which we classify all the values of the real and imaginary parts of the attenuation coefficient for the propagation velocity. This analysis can allow us to demonstrate the best possibility in utilization for the BAW generation. This study will be very interesting in modeling and realization of acoustic wave devices (ultrasound) based on the propagation of acoustic microwaves.

},
	url = {https://www.researchgate.net/publication/324125585_A_comparative_study_for_two_LiNbO3_cuts_Y-Z_and_Y-X_in_detecting_bulk_acoustic_microwaves_using_Probabilistic_Neural_Network},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@article {3983,
	title = {PSpice implementation and simulation of a new electro-thermal modeling for estimating the junction temperature of low voltage power MOSFET, ISSN / e-ISSN 2077-6772 / 2306-4277},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {Vol.10},
	number = {N{\textdegree}6},
	year = {2018},
	pages = {pp 06004-06009},
	abstract = {The estimation of the junction temperature (Tj) is very important factor for improving the reliability and efficiency of the power electronic converters. A new electro-thermal (ET) model of low voltage power MOSFET is described in this paper. The electro-thermal model allows fast estimation of the junction temperature, based on the transient thermal impedances (Zth) using the (RC) Foster thermal network model and total power losses. The parameters of the (RC) Foster thermal network model are extracted from the data provided by the manufacturer{\textquoteright}s datasheet using particle swarm optimization (PSO) method. Moreover, a dc/dc Buck converter is also analyzed by simulation to evaluate the electro-thermal model. The simulation results indicate a good agreement between the proposed model and manufacturer{\textquoteright}s data. Finally, the electro-thermal (ET) model simulation using this (RC) Foster thermal network model shows a reasonable accuracy for estimating the junction temperature in a Dc/Dc buck converter.},
	url = {https://jnep.sumdu.edu.ua/download/numbers/2018/6/articles/jnep_06004.pdf},
	author = {Smail Toufik and Dibi Zohir and Douadi Bendib}
}
@article {3980,
	title = {RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131},
	journal = {Journal of Telecommunication, Electronic and Computer Engineering },
	volume = {volume 10},
	number = {N{\textdegree}2},
	year = {2018},
	abstract = {This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.},
	url = {https://journal.utem.edu.my/index.php/jtec/article/view/3352},
	author = {Yousfi Abderrahim and Dibi Zohir and Aissi  Salim and Bencherif Hichem and Saidi Lamir}
}
@article {3974,
	title = {Design of a Selective Smart Gas Sensor Based on ANN-FL Hybrid Modeling},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {10},
	number = {6},
	year = {2018},
	pages = {06011-06016},
	abstract = {The selectivity is one of the main challenges to develop a gas sensor, the good chemical species detection in a gaseous mixture decreasing the missed detections. The present paper proposes a new solution for gas sensor selectivity based on artificial neural networks (ANNs) and fuzzy logic (FL) algorithm. We first use ANNs to develop a gas sensor model in order to accurately express its behavior. In a second step, the FL and Matlab environment are used to create a database for a selective model, where the response of this one only depends on one chemical species. Analytical models for the gas sensor and its selective model are implemented into a Performance Simulation Program with Integrated Circuit Emphasis (PSPICE) simulator as an electrical circuit in order to prove the similarity of the analytical model output with that of the MQ-9 gas sensor where the output of the selective model only depends on one gas. Our results indicate the capability of the ANN-FL hybrid modeling for an accurate sensing analysis.},
	url = {https://jnep.sumdu.edu.ua/download/numbers/2018/6/articles/jnep_06011.pdf},
	author = {S. Kouda and Dendouga Abdelghani and S. Barra and Bendib Toufik}
}
@article {3973,
	title = {Parameter Extraction of Schottky Solar Cell in Wide Temperature Range UsingGenetic Algorithms, ISSN / e-ISSN 2077-6772 / 2306-4277},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {volume 10},
	number = { issue 6},
	year = {2018},
	pages = {pp 06046-1 - 06046-4},
	abstract = {This paper proposes a new method based on a genetic algorithm (GA) approach to optimize the electrical parameters such as height barrier, ideality factor, fill factor, open-circuit voltage and power conversion efficiency, in order to improve the electrical performance of Schottky solar cells in an over wide range of temperature. Thus the parameters research process called objective function is used to find the optimal electrical parameters providing greater conversion efficiency. The proposed model results are also compared to experimental and analytical I-V data, where a good agreement has been found between them. Therefore, this approach may provide a theoretical basis and physical insights for Schottky solar cells.},
	url = {https://www.researchgate.net/publication/329836321_Parameter_Extraction_of_Schottky_Solar_Cell_in_Wide_Temperature_Range_Using_Genetic_Algorithms},
	author = {Lakehal Brahim and Dendouga Abdelghani}
}
@article {3968,
	title = {PCA-based selection of distinctive stability criteria and classification of post-stroke pathological postural behaviour, ISSN / e-ISSN 0158-9938 / 1879-5447},
	journal = {Australasian Physical \& Engineering Sciences in Medicine},
	volume = {Volume 41},
	number = { Issue 1},
	year = {2018},
	pages = { pp 189{\textendash}199},
	abstract = {In this paper, we study the postural behaviour of two categories of people: Post-CVA subjects suffering from cerebrovascular accident syndromes and healthy individuals under several levels of anterior{\textendash}posterior and medial{\textendash}lateral sinusoidal disturbances (0.1{\textendash}0.5 Hz). These perturbations were produced from an omnidirectional platform called Isiskate. Afterwards, we have quantified seventy postural parameters, they were combined of linear stabilometric parameters and non-linear time dependent stochastic parameters using stabilogram diffusion analysis and some spectral attributes using power spectral density. The aim of our analysis is to reduce data dimensionality using principal component analysis (PCA). Furthermore, we proposed a new PCA-related criterion named: criterion of contribution in order to evaluate the contribution of every variable in the resulted system structure, and thus to eliminate the redundant postural characteristics. Afterwards, we highlighted some interesting distinctive parameters. The selected parameters were used thereafter in comparison between the studied groups. Finally, we created a classification model using support vector machines to distinguish stroke patients. Our proposed techniques help in understanding the human postural dynamics and facilitate the diagnosis of pathologies related to equilibrium which can be used to improve the rehabilitation services.},
	url = {https://link.springer.com/article/10.1007/s13246-018-0628-9},
	author = {Hedjazi Naceur and Kharboutly Haissam and Benali Abderraouf and Dibi Zohir}
}
@article {3967,
	title = {Model identification and evaluation of postural dynamics of healthy and post-stroke individuals under unidirectional perturbations, ISSN / e-ISSN 1746-8094 / 1746-8108},
	journal = {Biomedical Signal Processing and Control},
	volume = {Volume 43},
	year = {2018},
	pages = {pp 75-85},
	abstract = {In this paper, different techniques of analysis have been used to study the effects of perturbations generated from a\&nbsp;robotic\&nbsp;mobile platform called Isiskate. These disturbances were applied on two categories of people: post-CVA subjects suffering from cerebrovascular accident and healthy individuals. Our aim is to analyze some assessment tools to distinguish between different postural behaviors. In relevant works, very few studies have addressed the use of nonlinear time-series methods in diagnosis of post-CVA pathological postural behavior. Furthermore, our tools are based on parametric and non-parametric identification procedures, that can yield to an insight on how to improve the examination time. As part of our analysis, the tests were established with several levels of\&nbsp;sinusoidal vibrations, along the anterior{\textendash}posterior (A/P) and medial{\textendash}lateral (M/L) planes. The mobile platform allowed us to record a set of coordinates that includes center of pressure (COP) as a function of time. First, we have quantified some\&nbsp;linear parameters\&nbsp;and\&nbsp;spectral characteristics\&nbsp;using\&nbsp;power spectral density\&nbsp;(PSD). Thereafter, we have deduced\&nbsp;stochastic parameters\&nbsp;using stabilogram diffusion analysis (SDA), which revealed some interesting invariants. Then transfer functions between the platform velocity and COP trajectory were evaluated. They were carried out at frequencies from 0.1 Hz to 3.3 Hz. Furthermore, we accomplished a comparison of models based on both parametric and nonparametric identification methods. The combination of the proposed techniques has provided us an understanding of human control process by establishing a behavior model and helped us to distinguish patients with postural disorders. This improves postural analysis and facilitates the diagnosis of pathologies related to equilibrium which serves in rehabilitation.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1746809418300466},
	author = {Hedjazi Naceur and Benali Abderraouf and Bouzit Mourad and Dibi Zohir}
}
@article {3964,
	title = {A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube ISSN / e-ISSN 0263-2241 / 1873- 412X},
	journal = {Measurement},
	volume = {Volume 125},
	year = {2018},
	pages = { Pages 232-242},
	abstract = {This paper presents a new nanoforce sensor based on a suspended carbon\&nbsp;nanotube\&nbsp;gate\&nbsp;field-effect transistor. To do so, a numerical investigation of Suspended Gate\&nbsp;Silicon-on-Insulator\&nbsp;MOSFET\&nbsp;(SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube{\textquoteright}s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the\&nbsp;saturation region. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on\&nbsp;artificial neural networks\&nbsp;(ANNs). We successfully integrate our\&nbsp;neural model\&nbsp;of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on\&nbsp;neural networks, which deals with correction and\&nbsp;linearization\&nbsp;of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.},
	url = {https://www.sciencedirect.com/science/article/pii/S0263224118303452},
	author = {F.Menacer and Dibi Zohir and A.Kadri and Djeffal Fay{\c c}al}
}
@article {3961,
	title = {Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors },
	journal = {Journal of Computational Electronics},
	volume = {Volume 17},
	number = { Issue 4},
	year = {2018},
	pages = {pp 1797{\textendash}1806},
	abstract = {Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double gate (DG) dielectric modulated (DM) junctionless (JL) metal oxide semiconductor field effect transistor (MOSFET) with triple material (TM) gate. Based on the dielectric modulation effect, DNA molecules in the nanogap cavity change due to the charge density of biomolecules, producing a change in the threshold voltage of the device. Analytical and numerical analysis was carried out to reveal the impact of physical parameters on the sensitivity of the proposed biosensor. Various characteristics, such as the surface potential, threshold voltage, and drain current were also investigated. The effectiveness of the proposed TM-DG-DM-JL-MOSFET structure with highly doped source/drain extensions is confirmed by comparison of the results with those for a conventional single-materiel (SM) gate DM-JL-MOSFET, revealing a good improvement in sensitivity and making the proposed structure an attractive solution for use in DNA-based sensor applications.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1228-3},
	author = {M. Ouarghi and Dibi Zohir and N. Hedjazi}
}
@article {3959,
	title = {Performance analysis of a new graphene based-phototransistor for ultra-sensitive infrared sensing applications, ISSN 0030-4026},
	journal = {Optik},
	volume = {176},
	year = {2018},
	pages = {24-31},
	abstract = {
	In this paper, a new Graphene nanoribbon (GNR) based\&nbsp;Ge-phototransistor is proposed and investigated numerically by self-consistently solving the Schr{\"o}dinger equation and\&nbsp;Poisson equation\&nbsp;using\&nbsp;non-equilibrium\&nbsp;Green{\textquoteright}s function\&nbsp;(NEGF) formalism. An overall performance metrics comparison between both the conventional\&nbsp;Si-based\&nbsp;phototransistor\&nbsp;and the proposed design is performed. It is found that the proposed\&nbsp;GNR Ge-phototransistor provides better electrical and optical performances compared to the conventional counterpart. Moreover, using\&nbsp;GNR\&nbsp;material as a channel can improve the device performance not only enables a high\&nbsp;Ion/Ioff\&nbsp;ratio, but also allows achieving a superior sensitivity for ultra-low\&nbsp;optical powers. It is also revealed that the\&nbsp;responsivity\&nbsp;of the investigated design can be increased by reducing the\&nbsp;GNR\&nbsp;channel length. This underlines the outstanding capability of the proposed design for bridging the gap between modern\&nbsp;nanoelectronic\&nbsp;and\&nbsp;nanophotonic\&nbsp;technologies. In addition, the proposed\&nbsp;GNR-based\&nbsp;Ge-phototransistor can achieve an acceptable detectivity for very weak optical power intensities, in the order of some\&nbsp;Femto-Watts, which leads to reduce the total\&nbsp;power consumption\&nbsp;associated with\&nbsp;optical links. Therefore, the proposed\&nbsp;GNR\&nbsp;phototransistor pinpoints a new path toward achieving an ultrasensitive photoreceiver with\&nbsp;low power consumption, which makes it potential alternative for chip-level Infrared communication and nano-optoelectronic applications.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402618313494},
	author = {Kadri, A and Fay{\c c}al Djeffal and Hichem Ferhati and Menacer, Farid and Zohir Dibi}
}
