@inbook {6185,
	title = {Multi-objective Design of Nanoscale Double Gate MOSFET Devices Using Surrogate Modeling and Global Optimization},
	booktitle = {Intelligent Nanomaterials, II, Second Edition},
	year = {2016},
	pages = {395-427},
	publisher = {Willey},
	organization = {Willey},
	abstract = {
	In recent years, the design and fabrication ofmulti-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have attracted more efforts due to their high appropriateness for advanced integration circuits{\textquoteright} applications. In fact, the boost of MOSFET structures is a battle against parasitic phenomena appearing at the nanoscale level. Short channel and quantum confinement effects are among the critical drawbacks that need to be remedied carefully. On the other hand, the hot carrier degradation effect is mainly a reliability concern affecting the device per- formance after long duration of work. In response to the high computational costs related to the development of physi- cal based models for Double Gate (DG) MOSFETs including all these effects, more flexible alternatives have been proposed for the prediction of device performances. Our aim in this chapter is to investigate the efficiency of a new proposed frame- work, built upon Kriging metamodeling and Non-dominated Sorting Genetic Algorithm version II (NSGA II), for the optimal design in terms of OFF-current, threshold voltage and swing factor. The input variables of interest are limited to the geometrical parameters namely the channel length and thickness. Data generated according to computer experiments, based on ATLAS 2-D simulator, are used to identify and adjust Kriging surrogate models. It is emphasized that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. Therefore, a wide range of selection possibilities is avail- able to the designer depending on situations under consideration.

},
	url = {https://www.researchgate.net/publication/308994823_Multi-objective_Design_of_Nanoscale_Double_Gate_MOSFET_Devices_Using_Surrogate_Modeling_and_Global_Optimization},
	author = {Bentercia, Toufik and Fay{\c c}al Djeffal and Elasaad Chebaki}
}
@mastersthesis {5354,
	title = {Etude des d{\'e}fauts d\&rsquo;interface Si/SiO2 dans les transistors MOS : simulation sous SILVACO et mod{\'e}lisation},
	year = {2016},
	author = {Chenaf  Tarek}
}
@mastersthesis {5346,
	title = {R{\'e}alisation d\&rsquo;un syst{\`e}me de pousse seringue {\`a} base d\&rsquo;un moteur pas {\`a} pas unipolaire},
	year = {2016},
	author = {Bennini Aziz}
}
@mastersthesis {5345,
	title = {Etude et r{\'e}alisation d\&rsquo;un agitateur magn{\'e}tique pour les analyses biochimiques},
	year = {2016},
	author = {Boudouh Adel}
}
@mastersthesis {5330,
	title = {Redondance logicielle pour la tol{\'e}rance aux fautes des communications},
	year = {2016},
	author = {Arar Chafik}
}
@mastersthesis {5328,
	title = {Commande  Robuste d\&rsquo;un Pendule Invers{\'e}},
	year = {2016},
	author = {Habbeddine Saad}
}
@mastersthesis {5327,
	title = {Mod{\'e}lisation et Commande d\&rsquo;un Robot Manipulateur {\`a} Articulations Flexibles},
	year = {2016},
	author = {Bendib, Hafededdine}
}
@mastersthesis {5320,
	title = {D{\'e}tection et g{\'e}n{\'e}ration des micro-ondes acoustiques de volume dans les structures pi{\'e}zo{\'e}lectriques},
	year = {2016},
	type = {Doctorat},
	abstract = {
	Dans ce travail, nous proposons une nouvelle m{\'e}thode pour la d{\'e}tection des micro-ondes acoustiques de volume dans un substrat pi{\'e}zo{\'e}lectrique (Niobate de Lithium LiNbO3). Nous avons utilis{\'e} la classification par r{\'e}seaux probabilistes de neurones comme un moyen d{\textquoteright}analyse num{\'e}rique afin de classer toutes les valeurs de la partie r{\'e}elle et la partie imaginaire du coefficient d{\textquoteright}att{\'e}nuation pour les diff{\'e}rentes vitesses acoustiques en construisant ainsi un mod{\`e}le de d{\'e}tection efficace des ondes de volume. Cette {\'e}tude sera tr{\`e}s int{\'e}ressante dans la mod{\'e}lisation et la r{\'e}alisation des dispositifs micro-ondes acoustiques tels que les dispositifs {\`a} ultrasons bas{\'e} sur la propagation des micro-ondes acoustiques de volume. En plus, nous pouvons appliquer cette technique sur n{\textquoteright}importe qu{\textquoteright}elle structure pi{\'e}zo{\'e}lectrique poss{\'e}dant la m{\^e}me classe cristallographique, il suffit juste de changer les param{\`e}tres caract{\'e}ristiques du mat{\'e}riau consid{\'e}r{\'e}.

},
	url = {http://eprints.univ-batna2.dz/319/},
	author = {Hafdaoui, Hichem}
}
@mastersthesis {5309,
	title = {Analyse d\&$\#$39;un r{\'e}sonateur planaire r{\'e}glable par l\&$\#$39;{\'e}quivalence avec une substance monocouche},
	year = {2016},
	author = {Chabane Amel}
}
@mastersthesis {5297,
	title = {Reconstitution d\&rsquo;une sc{\`e}ne 3D {\`a} partir d\&rsquo;indices visuels 2D},
	year = {2016},
	author = {BRIOUA Abdelkrim}
}
@mastersthesis {5292,
	title = {Contribution {\`a} la Conception des circuits Mode de courant en Technologie CMOS},
	year = {2016},
	author = {Hanfoug Salah}
}
@mastersthesis {5291,
	title = {Mod{\'e}lisation des transistors organiques},
	year = {2016},
	author = {BENACER Imad}
}
@mastersthesis {5286,
	title = {Mod{\'e}lisation d\&rsquo;un ENFET},
	year = {2016},
	author = {Seyf el islam Farah}
}
@mastersthesis {5285,
	title = {Mod{\'e}lisation d\&rsquo;un ISFET},
	year = {2016},
	author = {BOUDJENIFA Bahia}
}
@proceedings {4660,
	title = {Ge on porous silicon/Si substrate analysed by Raman spectroscopy and Atomic force microscopy},
	journal = {First International Symposium on Dielectric Materials and Applications},
	year = {2016},
	url = {http://www.mrforum.com/product/9781945291197-38/},
	author = {R amdane Mahamdi}
}
@proceedings {4659,
	title = {TEM and XRD characterizations of epitaxial Silicon layer fabricated on double layer porous Silicon},
	journal = {First International Symposium on Dielectric Materials and Applications},
	year = {2016},
	url = {http://www.mrforum.com/product/9781945291197-62/},
	author = {R amdane Mahamdi}
}
@proceedings {4658,
	title = {Modeling and Optimization Techniques of Boron diffusion parameters in MOS transistor Using SILVACO ATHENA and Matlab},
	journal = {First International Symposium on Dielectric Materials and Applications},
	year = {2016},
	url = {http://www.mrforum.com/product/9781945291197-19/},
	author = {R amdane Mahamdi}
}
@proceedings {4657,
	title = {Enhancement of the optical performance of ZnO thin-film using metallic nano-particles for optoelectronic applications},
	journal = {17th International conference on Sciences and Techniques of Automatic control and computer engineering STA},
	year = {2016},
	url = {https://ieeexplore.ieee.org/document/7952007/},
	author = {R amdane Mahamdi}
}
@proceedings {4651,
	title = {Enhancement of the optical performance of ZnO thin-film using metallic nano-particles for optoelectronic applications},
	journal = {17th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA)},
	year = {2016},
	url = {DOI: 10.1109/STA.2016.7952007},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4647,
	title = {Modeling of boron nitride-based nanotube biological sensor using neural networks},
	journal = {17th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA)},
	year = {2016},
	url = {DOI: 10.1109/STA.2016.7951987},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4640,
	title = {Simulation and control of multi-agents for mobile manipulator robot},
	journal = {2nd INTERNATIONAL CONFERENCE ON PATTERN ANALYSIS AND INTELLIGENT SYSTEMS },
	year = {2016},
	author = {Khireddine Mohamed Salah}
}
@proceedings {4638,
	title = {A neural network MPP tracker using a Buck-Boost DC/DC converter for photovoltaic systems},
	journal = {5th International Conference on Systems and Control (ICSC)},
	year = {2016},
	url = {https://www.semanticscholar.org/paper/A-neural-network-MPP-tracker-using-a-Buck-Boost-for-Makhloufi-Abdessemed/5da86d062f81d10b7f2fd75514185270825ed059},
	author = {Khireddine Mohamed Salah}
}
@proceedings {4635,
	title = {Mobile robot trajectory tracking using PID fast terminal sliding mod inverse dynamic control},
	journal = {4th international conference on control, Engineering and information technology (CEIT-2016)},
	year = {2016},
	author = {Mallem Ali}
}
@proceedings {4632,
	title = {A neural network MPP tracker using a Buck-Boost DC/DC converter for photovoltaic systems},
	journal = {5th International Conference on Systems and Control (ICSC)},
	year = {2016},
	author = {Makhloufi Mohamed Tahar}
}
@proceedings {4623,
	title = {A rigorous full-wave analysis of high TC superconducting circular disc microstrip antenna},
	journal = {8th International Conference on Modelling, Identification and Control (ICMIC 2016)},
	year = {2016},
	url = {https://ieeexplore.ieee.org/abstract/document/7804205},
	author = {Bouraiou Abdelouahab}
}
@article {4097,
	title = {Modeling of Magnetic Properties of Iron Thin Films Deposited by RF Magnetron Sputtering using Preisach Model},
	journal = {Serbian Journal of Electrical Engineering},
	volume = {13},
	number = {2},
	year = {2016},
	pages = {229-238},
	abstract = {
	Iron thin films were deposited on glass substrates using RF magnetron sputtering and their optimal deposition conditions were determined. The structure properties were analyzed using x-ray diffraction (XRD) and their magnetic hysteresis loops were obtained by Vibrating Sample Magnetometer (VSM) at room temperature. In this situation, the magnetic field is either parallel or perpendicular to the substrate plane. The main contribution of this work is to characterize the thin layers and present a mathematical model that can get best fit of the characteristics B(H). By using Preisach model, good agreement was obtained between theoretical and experimental results in both cases.

},
	url = {https://www.researchgate.net/publication/305042230_Modeling_of_magnetic_properties_of_iron_thin_films_deposited_by_RF_magnetron_sputtering_using_Preisach_model},
	author = {Bendjerad, Adel and Boukhtache, Sebti and Benhaya, Abdelhamid and Luneau, Dominique and Abaidia, Seddik El Hak and Benyahia, Kaddour}
}
@article {4096,
	title = {Techniques of Boron diffusion parameters in MOS transistor Using SILVACO ATHENA and Matlab, ISSN 2069-7201},
	journal = {Journal of Advanced Research in Physics},
	volume = {6},
	number = {2},
	year = {2016},
	pages = {021610},
	abstract = {
	Silicon oxide (SiO2) is a good dielectric material in metal-oxide-semiconductor (MOS) structures. The improved SiO2\&nbsp;quality requires adequate study of doping diffusion in this structure to maintain the absence of the different impurities in the interface Poylsilicon/SiO2. For this we studied a theoretical model of boron diffusion before and after thermal annealing in a highly-doped polysilicon films. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations. Based on the literature the model is solved using the engineering software tool MATLAB, following a well-defined algorithm. The model is validated with the help of simulation results obtained from Silvaco.

},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=93},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@article {4095,
	title = {Ge on porous silicon/Si substrate analyzed by Raman spectroscopy and atomic force microscopy, ISSN 2069-7201.},
	journal = {Journal of Advanced Research in Physics},
	volume = {volume 6},
	number = {N{\textdegree}2 },
	year = {2016},
	pages = {pp  021609~},
	abstract = {In this study, single crystal Ge layers have been deposited by molecular beam epitaxy on PSi substrate, with different thicknesses (40 nm and 80 nm) at the growth temperature of 400{\textdegree}C. Raman and Atomic force microscopy (AFM) have been applied for investigation of photoluminescence, structural and morphological properties of the Ge on PSi layers. The results show a stronger Raman intensity of PSi due to change of its optical constant. Similarly the Si/Ge/PSi sample shows a peak at 399 cm-1 but with lower intensity compared with that of PSi probably due to the Si emission partially covered by the Ge inside the pores. Besides that a sharp Raman peak at 298 cm-1 is observed which reflects Raman active transverse optical mode of the introduced Ge which indicates the growth of Ge with good crystallinity. AFM characterization shows the rough silicon surface which can be regarded as a condensation point for small skeleton clusters to form, with different size of pores. These changes are highly responsible for its photoluminescence in the red wavelength range. This study explores the applicability of prepared Ge/PSi layers for its various applications in advanced optoelectronics field and silicon-on-insulator applications.},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=92},
	author = {R amdane Mahamdi and Gouder, Soraya and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4094,
	title = {Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201},
	journal = {Journal of Advanced Research in Physics},
	volume = {volume 6},
	number = {N{\textdegree}2},
	year = {2016},
	pages = {pp 021607},
	abstract = {Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=90},
	author = {Gouder, Soraya and R amdane Mahamdi and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4093,
	title = {Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications, ISSN 1693-6930},
	journal = {TELKOMNIKA},
	volume = {volume 14},
	year = {2016},
	pages = { pp 1-3},
	abstract = {In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) has been developed numerically, to assess the optical modulation behavior of the OCFET for low power optical interconnections applications. It is found that, the proposed design demonstrates excellent capability in decreasing the phototransistor power consumption for inter-chip optical communication application. Moreover, the proposed device offers superior sensitivity and ION/IOFF ratio, in addition to lower signal to noise ratio as compared to the conventional IM-OCFET structure. The obtained results indicate the crucial role of the junctionless (JL) design in enhancing the phototransistor performance and reducing the total power dissipation. Such a very sensitive OCFET can be very promising in the future low power optical receiver less compatible to CMOS modern technology for high-quality interchips data communication applications.},
	url = {https://www.researchgate.net/publication/312202116_Numerical_Investigation_of_A_New_Junctionless_Phototransistor_for_High-Performance_and_Ultra-Low_Power_Infrared_Communication_Applications},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Bentercia Toufik}
}
@article {4089,
	title = {Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642},
	journal = {Physica Status Solidi {\textcopyright} Current Topics in Solid State Physics},
	volume = {13},
	number = {4},
	year = {2016},
	pages = {151-155},
	abstract = {
	The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. ({\textcopyright} 2016 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim)

},
	url = {https://www.researchgate.net/publication/298899546_Numerical_investigation_of_nanoscale_double-gate_junctionless_MOSFET_with_drain_and_source_extensions_including_interfacial_defects},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Arar,  Djemai and Mohamed Meguellati}
}
@article {4088,
	title = {Journal of SemiconductorsPAPERStructural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol\&mdash;gel dip coating process},
	journal = {Journal of Semiconductors},
	volume = {37},
	number = {11},
	year = {2016},
	abstract = {
	In this work, sol{\textemdash}gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5\%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ωcm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

},
	url = {https://iopscience.iop.org/article/10.1088/1674-4926/37/11/113001},
	author = {Boukhenoufa, Noureddine and R amdane Mahamdi and Rechem, Djamil}
}
@article {4087,
	title = {Modeling, control and optimization of a new swimming microrobot design},
	journal = {Engineering Letters },
	volume = {Volume 24},
	number = { N{\textdegree}1},
	year = {2016},
	pages = {pp 106-112},
	abstract = {This article deals with the study of a new swimming microrobot behavior using an analytical investigation. The analyzed microrobot is associated by a spherical head and hybrid tail. The principle of modeling is based on solving of the coupled elastic/fluidic problems between the hybrid tail{\textquoteright}s deflections and the running environment. In spite of the resulting nonlinear model can be exploited to enhance both the sailing ability and also can be controlled in viscous environment using nonlinear control investigations. The applications of the micro-robot have required the precision of control for targeting the running area in terms of response time and tracking error. Due to these limitations, the Flatness-ANFIS based control is used to ensure a good control behavior in hazardous environment. Our control investigation is coupled the differential flatness and adaptive neuro-fuzzy inference techniques, in which the flatness is used to planning the optimal trajectory and eliminate the nonlinearity effects of the resulting model. In other hand, the neuro-fuzzy inference technique is used to build the law of control technique and minimize the dynamic error of tracking trajectory. In particular, we deduct from a non linear model to an optimal model of the design parameter{\textquoteright}s using Multi-Objective genetic algorithms (MOGAs). In addition, Computational fluid dynamics modeling of the microrobot is also carried out to study the produced thrust and velocity of the microrobot displacement taking into account the fluid parameters. Our analytical results have been validated by the recorded good agreement between the numerical and analytical results.},
	url = {https://www.researchgate.net/publication/298711278_Modeling_Control_and_Optimization_of_a_New_Swimming_Microrobot_Design},
	author = {Fawzi Srairi and Lamir Saidi and Fay{\c c}al Djeffal and Mohamed Meguellati}
}
@article {4077,
	title = {Ge on porous silicon/Si substrate analyzed by Raman spectroscopy and atomic force microscopy},
	journal = {Journal of A dvanced Research in Physics},
	volume = {6},
	number = {2},
	year = {2016},
	pages = {021609},
	abstract = {In this study, single crystal Ge layers have been deposited by molecular beam epitaxy on PSi substrate, with different thicknesses (40 nm and 80 nm) at the growth temperature of 400{\^A}{\textdegree}C. Raman and Atomic force microscopy (AFM) have been applied for investigation of structural and morphological properties in order to explain the photoluminescence properties of the Ge on PSi layers. The results show a stronger Raman intensity of PSi due to change of its optical constant. Similarly, the Si/Ge/PSi sample shows a peak at 399 cm-1 but with lower intensity compared with that of PSi probably due to the Si emission partially covered by the Ge inside the porous. Besides that, a sharp Raman peak at 298 cm-1 is observed which reflects Raman active transverse optical mode of the introduced Ge which indicate the growth of Ge with good crystallinity. AFM characterization shows the rough silicon surface which can be regarded as a condensation point for small skeleton clusters to form, with different size of pores. These changes are highly responsible for its photoluminescence in the red wavelength range. This study explores the applicability of prepared Ge/PSi layers for its various applications in advanced optoelectronics field and silicon-on-insulator applications.},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=92\&path\%5B\%5D=93},
	author = {R amdane Mahamdi and Gouder, Soraya and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4076,
	title = {Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs},
	journal = {Journal of A dvanced Research in Physics},
	volume = {6},
	number = {2},
	year = {2016},
	pages = {021607},
	abstract = {
	Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.

},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=90\&path\%5B\%5D=91},
	author = {Gouder, Soraya and R amdane Mahamdi and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4072,
	title = {Impact of the drain and source extensions on nanoscale Double-Gate Junctionless MOSFET analog and RF performances},
	journal = {Materials Science in Semiconductor Processing},
	volume = {42},
	year = {2016},
	pages = {264-267},
	abstract = {
	Multi-Gate Junctionless MOSFETs are promising devices to overcome the undesired short channel effects for low cost nanoelectronic applications. However, the high series resistance associated to the source and drain extensions can arise as a serious problem when dealing with uniformly doped channel, which leads to the degradation of the device performance. Therefore, in order to obtain a global view of Double-Gate Junctionless (DGJ) MOSFET performance under critical conditions, new designs and models of nanoscale DGJ MOSFET including analog performance are important for the comprehension of the fundamentals of such device characteristics. In the present paper, a numerical investigation for the drain current and small signal characteristics is conducted for the DGJ MOSFET by including highly doped extension regions. The proposed approach, which is from a practical viewpoint a feasible technique by introducing only one ion implantation step, provides a good solution to improve the drain current, small signal parameters, analog/RF behavior and linearity of DGJ MOSFET for high performance analog applications. In this context, I{\textendash}V and analog characteristics of the proposed design are investigated by 2-D numerical modeling and compared with conventional DGJ MOSFET characteristics.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1369800115300986},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Elasaad Chebaki and Arar,  Djemai}
}
@article {4071,
	title = {A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 15},
	number = {N{\textdegree}1},
	year = {2016},
	pages = {pp 301-310},
	abstract = {In this paper, we propose a new optically controlled field effect transistor, OC-FET, based on both surface texturization and graded gate doping engineering. The proposed design consists of a gate with both graded doping and surface texturization aspects to ensure high efficient light absorption and low dark current, respectively. Moreover, using an analytical investigation, an overall performance comparison of the proposed dual texturized gate (DTG) OC-FET device and conventional OC-FETs has been studied in order to confirm the enhanced optical and electrical performance of the proposed design in terms of increased photoresponsivity (R), optical gain (Formula presented.) ratio, drain current driving capability (Formula presented.) and high signal to noise ratio. Simulations show very good agreement between the results of the developed analytical models and those of TCAD software for wide range of design parameters. The developed analytical models are used to formulate the objective functions to optimize the device performance using a multi-objective genetic algorithm (MOGA). The proposed MOGA-based approach is used to search the optimal design parameters, for which the electrical and optical device performance is maximized. The obtained superior electrical performance suggests that our DTG OC-FET offers great promise as optical sensors and transducers for CMOS-based optical communications.},
	url = {https://link.springer.com/article/10.1007/s10825-015-0752-7},
	author = {Djeffal Fay{\c c}al and Ferhati Hichem}
}
@article {4070,
	title = {Role of gradual gate doping engineering in improving phototransistor performance for ultra-low power applications, ISSN 1569-8025},
	journal = {Journal of Computational Electronics },
	volume = {Volume 15},
	year = {2016},
	pages = {pp 550-556},
	abstract = {In this paper, an optimized ultra-low power phototransistor design based on gradual gate doping engineering is proposed. Using an analytical investigation and numerical simulation, an overall performance comparison of the proposed phototransistor design and conventional structure has been studied, in order to show the improved characteristics provided by the proposed design in terms of increased \(I_{ON}/I_{OFF}\) ratio and superior photoresponsivity capability. The results obtained from our analytical investigation are validated by comparison with the numerical simulations, thus establishing the accuracy of our analytical investigation. Moreover, the developed analytical models are used to optimize the proposed design using a genetic algorithm (GA) based-computation. The advantages offered by the proposed design suggest the possibility to overcome the most challenging problem with the power requirements of the optical interconnect: power consumption in the light emitter and in the receiver. In this context, the proposed phototransistor owing to the high responsivity requires less optical power from the light emitter to achieve an acceptable signal-to-noise ratio compared to the phototransistor with conventional design.},
	url = {https://link.springer.com/article/10.1007/s10825-015-0779-9},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4069,
	title = {New high performance ultraviolet (MSM) TiO2/Glass photodetector based on diffraction grating for optoelectronic applications, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 127},
	number = {Issue 18},
	year = {2016},
	pages = {pp 7202-7209},
	abstract = {In this paper, a new TiO2-based UV photodetector including back triangular texturization morphology has been investigated numerically using accurate solutions of Maxwell{\textquoteright}s equations. A quantitative study of the device optical parameters like responsivity, sensitivity, detectivity, derived current capability and signal to noise ratio have been carried out in order to review the device overall optical performance for UV optical communication applications. Based on the obtained results, we have found that the device performance figures-of-merit (FoMs) governing the optical behavior is strongly improved as compared to its conventional planar counterpart, where the proposed design offers superior photocurrent, higher responsivity and sensitivity in comparison with those provided by the planar structure. These results led us to suggest the optimization of the proposed morphology using genetic algorithm (GA), in order to improve the electric field confinement and UV-light trapping in TiO2 absorber layer, where excellent ability has been recorded in enhancing the device absorbance. In this context, photodetector with optimized triangular texturization exhibits a 432\% improvement, in term of responsivity, over planar structures and 120\% improvement over the textured device without optimization. Thus, these encouraging results make the proposed device an extremely efficient candidate for high performance optoelectronic applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402616304879},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4068,
	title = {Role of Optimized Grooves Surface-Textured Front Glass in Improving TiO2 Thin Film UV Photodetector Performance, ISSN / e-ISSN 1530-437X / 1558-1748},
	journal = { IEEE Sensors Journal },
	volume = { Volume 16 },
	number = { Volume 16 },
	year = {2016},
	pages = { pp 5618-5625},
	abstract = {In this paper, the impact of the surface-textured front glass on the absorption of TiO 2 /glass thin-film ultraviolet (UV) photodetector is investigated, in order to achieve the dual role of increasing the scattering of UV-light as well as reducing the refracting UV-light in the glass. The efficient control of these phenomena may lead to more electric field confinement and UV-light trapping in TiO 2 absorber layer. Moreover, semianalytical modeling combined with particle swarm optimization is carried out for studying and enhancing the metal-semiconductor-metal photodetector optical and electrical performances. The results obtained from our semianalytical investigation are validated by comparison with the experimental data. It is found that the absorbance increases significantly by about 51\% in optimized design over the planar structure, which is expected to improve the photodetector figures of merit. In this context, photodetector with optimized grooves texturization exhibits a 341\% improvement, in terms of responsivity, in comparison with the planar structure and 275\% improvement with respect to the textured device without optimization. The obtained results make the proposed design methodology a promising alternative for high-performance optoelectronic applications.},
	url = {https://ieeexplore.ieee.org/document/7480766},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4067,
	title = {Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 15},
	year = {2016},
	pages = {pp 1308-1315},
	abstract = {The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green{\textquoteright}s function formalism performed with the self-consistent solution of the Poisson and Schr{\"o}dinger equations. The device performance is investigated in terms of leakage current, on-state current, ION/IOFF current ratio, subthreshold slope, drain-induced barrier lowering, as well as transconductance, drain conductance, and intrinsic gate delay. This study is carried out over a wide range of dielectric permittivities at low temperatures ranging from room temperature down to 100\&nbsp;K.},
	url = {https://link.springer.com/article/10.1007/s10825-016-0901-7},
	author = {Rechem Djamil and Khial Aicha and Azizi Cherifa and Djeffal Fay{\c c}al}
}
@article {4066,
	title = {Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis, ISSN / e-ISSN 1530-437X / 1558-1748},
	journal = {IEEE Sensors Journal},
	volume = { Volume 16},
	number = {Issue 11 },
	year = {2016},
	pages = {pp 4180 - 4191},
	abstract = {In this paper, new sensors based on a double-gate (DG) graphene nanoribbon field-effect transistor (GNRFET), for high-performance DNA and gas detection, are proposed through a simulation-based study. The proposed sensors are simulated by solving the Schr{\"o}dinger equation using the mode space non-equilibrium Green{\textquoteright}s function formalism coupled self-consistently with a 2D Poisson equation under the ballistic limits. The dielectric and work function modulation techniques are used for the electrical detection of DNA and gas molecules, respectively. The behaviors of both the sensors have been investigated, and the impacts of variation in geometrical and electrical parameters on the sensitivity of sensors have also been studied. In comparison to other FET-based sensors, the proposed sensors provide not only higher sensitivity but also better electrical and scaling performances. The obtained results make the proposed DG-GNRFET-based sensors as promising candidates for ultra-sensitive, small-size, low-power and reliable CMOS-based DNA, and gas sensors.},
	url = {https://ieeexplore.ieee.org/document/7447665},
	author = {Tamersit Khalil and Djeffal Fay{\c c}al}
}
@article {4065,
	title = {Performance enhancement of Pt/TiO 2/Si UV-photodetector by optimizing light trapping capability and interdigitated electrodes geometry, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume 97},
	year = {2016},
	pages = {pp 303-312},
	abstract = {
	
		This paper presents a hybrid approach based on an analytical and metaheuristic investigation to study the impact of the interdigitated electrodes engineering on both speed and optical performance of an Interdigitated Metal{\textendash}Semiconductor{\textendash}Metal Ultraviolet Photodetector (IMSM-UV-PD). In this context, analytical models regarding the speed and optical performance have been developed and validated by experimental results, where a good agreement has been recorded. Moreover, the developed analytical models have been used as objective functions to determine the optimized design parameters, including the interdigit configuration effect, via a Multi-Objective Genetic Algorithm (MOGA). The ultimate goal of the proposed hybrid approach is to identify the optimal design parameters associated with the maximum of electrical and optical device performance. The optimized IMSM-PD not only reveals superior performance in terms of photocurrent and response time, but also illustrates higher optical reliability against the optical losses due to the active area shadowing effects. The advantages offered by the proposed design methodology suggest the possibility to overcome the most challenging problem with the communication speed and power requirements of the UV optical interconnect: high derived current and commutation speed in the UV receiver.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603616302828},
	author = {Bencherif Hichem and Djeffal Fay{\c c}al and Ferhati Hichem}
}
@article {4042,
	title = {Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume 92},
	year = {2016},
	pages = {pp 80-91},
	abstract = {In this paper, we propose a new Double Gate Junctionless (DGJ) MOSFET design based on both gate material engineering and drain/source extensions. Analytical models for the long channel device associated to the drain current, analog and radio-frequency (RF) performance parameters are developed incorporating the impact of dual-material gate engineering and two highly doped extension regions on the analog/RF performance of DGJ MOSFET. The transistor performance figures-of-merit (FoM), governing the analog/RF behavior, have also been analyzed. The analog/RF performance is compared between the proposed design and a conventional DGJ MOSFET of similar dimensions, where the proposed device shows excellent ability in improving the analog/RF performance and provides higher drain current and improved figures-of-merit as compared to the conventional DGJ MOSFET. The obtained results have been validated against the data obtained from TCAD software for a wide range of design parameters. Moreover, the developed analytical models are used as mono-objective function to optimize the device analog/RF performance using Genetic Algorithms (GAs). In comparison with the reported numerical data for Inversion-Mode (IM) DG MOSFET, our optimized performance metrics for JL device exhibit enhancement over the reported data for IM device at the same channel length.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603616300520},
	author = {E.Chebaki and Djeffal Fay{\c c}al and Ferhati Hichem and Bentrcia Toufik}
}
@article {4041,
	title = {Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume 90},
	year = {2016},
	pages = {pp 132-140},
	abstract = {In this paper, the analytical investigation of a new design including drain and source extensions is presented to assess the electrical behavior of cylindrical gate-all-around junctionless (GAAJ) MOSFET for high performance RF and analog applications. Analytical models for drain current and performance parameters are derived incorporating the effect of two highly doped extension regions. Various analog and RF parameters like transconductance, cut-off frequency, drain current drivability, voltage gain and linearity characteristics have also been investigated. The proposed design shows excellent ability in improving the analog performance and provides a good solution to enhance the RF behavior and linearity of GAAJ MOSFET for low cost and high performance analog/RF applications. The proposed model results have been validated against the data obtained from a commercially available numerical device simulator. Moreover, the developed analytical approaches are easy to be implemented into microelectronic software simulators and therefore allow the study of the GAAJ-based deep submicron circuits},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603615302056},
	author = {Djeffal Fay{\c c}al and Ferhati Hichem and Bentrcia Toufik}
}
@article {4037,
	title = {An Efficient Fault-Tolerant Multi-Bus Data Scheduling Algorithm Based on Replication and Deallocation, ISSN  / e- ISSN 1311-9702  /  1314-4081},
	journal = {Cybernetics and Information Technologies},
	volume = {Volume 16},
	number = {N{\textdegree} 2},
	year = {2016},
	abstract = {The paper proposes a new reliable fault-tolerant scheduling algorithm for real-time embedded systems. The proposed scheduling algorithm takes into consideration only one bus fault in multi-bus heterogeneous architectures, caused by hardware faults and compensated by software redundancy solutions. The proposed algorithm is based on both active and passive backup copies, to minimize the scheduling length of data on buses. In the experiments, this paper evaluates the proposed methods in terms of data scheduling length for a set of DAG benchmarks. The experimental results show the effectiveness of our technique.},
	url = {https://www.researchgate.net/publication/304375372_An_Efficient_Fault-Tolerant_Multi-Bus_Data_Scheduling_Algorithm_Based_on_Replication_and_Deallocation},
	author = {Arar Chafik and Khireddine Mohamed Salah}
}
@article {4036,
	title = {Hybrid Software Redundancy Approach for Building Reliable Communication in Multi-BUS Heterogeneous Systems, ISSN / e-ISSN 0218-5393 / 1793-6446},
	journal = {International Journal of Reliability, Quality and Safety Engineering},
	volume = {Volume 23},
	number = {N{\textdegree} 4},
	year = {2016},
	pages = { pp 1650013},
	abstract = {The paper proposes a new reliable fault-tolerant scheduling algorithm for real-time embedded systems. The proposed algorithm is based on static scheduling that allows to include the dependencies and the execution cost of tasks and data dependencies in its scheduling decisions. Our scheduling algorithm is dedicated to multi-bus heterogeneous architectures with multiple processors linked by several shared buses. This scheduling algorithm is considering only one bus fault caused by hardware faults and compensated by software redundancy solutions. The proposed algorithm is based on both active and passive backup copies to minimize the scheduling length of data on buses. In the experiments, the proposed methods are evaluated in terms of data scheduling length for a set of DSP benchmarks. The experimental results show the effectiveness of our technique.},
	url = {https://www.worldscientific.com/doi/abs/10.1142/S0218539316500133},
	author = {Arar Chafik and Khireddine Mohamed Salah}
}
@article {4035,
	title = {A feed forward neural network MPPT control strategy applied to a modified cuk converter, ISSN 2088-8708},
	journal = {International Journal of Electrical and Computer Engineering},
	volume = {Volume 6},
	number = {N{\textdegree}4},
	year = {2016},
	pages = {pp 1421-1433},
	abstract = {This paper presents an intelligent control strategy that uses a feedforward artificial neural network in order to improve the performance of the MPPT (Maximum Power Point Tracker) MPPT photovoltaic (PV) power system based on a modified Cuk converter. The proposed neural network control (NNC) strategy is designed to produce regulated variable DC output voltage. The mathematical model of Cuk converter and artificial neural network algorithm is derived. Cuk converter has some advantages compared to other type of converters. However the nonlinearity characteristic of the Cuk converter due to the switching technique is difficult to be handled by conventional controller. To overcome this problem, a neural network controller with online learning back propagation algorithm is developed. The NNC designed tracked the converter voltage output and improve the dynamic performance regardless load disturbances and supply variations. The proposed controller effectiveness during dynamic transient response is then analyze and verified using MATLAB-Simulink. Simulation results confirm the excellent performance of the proposed NNC technique for the studied PV system.\&nbsp;},
	url = {https://www.researchgate.net/publication/309114424_A_Feed_forward_Neural_Network_MPPT_Control_Strategy_Applied_to_a_Modified_Cuk_Converter},
	author = {Mohamed Tahar Makhloufi and Abdessemed Yassine and Khireddine Mohamed Salah}
}
@article {4030,
	title = {An efficient ANN-based MPPT optimal controller of a DC/DC boost converter for photovoltaic systems, ISSN / e-ISSN 0005-1144 / 1848-3380},
	journal = {Automatika},
	volume = {Volume 57},
	number = {Issue 1},
	year = {2016},
	pages = {Pages 109-119 },
	abstract = {In this paper, a simulation study of the maximum power point tracking (MPPT) for a photovoltaic system using an artificial neural network is presented. Maximum power point tracking (MPPT) plays an important role in photovoltaic systems because it maximizes the power output from a PV solar system for all temperature and irradiation conditions, and therefore maximizes the power efficiency. Since the maximum power point (MPP) varies, based on the PV irradiation and temperature, appropriate algorithms must be utilized to track it in order maintain the optimal operation of the system. The software Matlab/Simulink is used to develop the model of PV solar system MPPT controller. The system simulation is elaborated by combining the models established of solar PV module and a DC/DC Boost converter. The system is studied using various irradiance shading conditions. Simulation results show that the photovoltaic simulation system tracks optimally the maximum power point even under severe disturbances conditions.},
	url = {https://www.tandfonline.com/doi/abs/10.7305/automatika.2016.07.798},
	author = {Mohamed Tahar Makhloufi and Abdessemed Yassine and Khireddine Mohamed Salah}
}
@article {4026,
	title = {An improved back propagation algorithm for training neural network-based equaliser for signal restoration in digital communication channels},
	journal = {International Journal of Mobile Network Design and Innovation },
	volume = {6},
	number = {4},
	year = {2016},
	pages = {236 - 244},
	abstract = {
	The back propagation (BP) algorithm has been very successful in training multilayer perceptron-based equalisers; despite its success BP convergence is still too slow. Within this paper we present a new approach to enhance the training efficiency of the multilayer perceptron-based equaliser (MLPE). Our approach consists on modifying the conventional back propagation algorithm, through creating an adaptive nonlinearity in the activation function. Experiment results evaluates the performance of the MLPE trained using the conventional BP and the improved back propagation with adaptive gain (IBPAG). Due to the adaptability of the activation function gain the nonlinear capacity and flexibility of the MLP is enhanced significantly. Therefore, the convergence properties of the proposed algorithm are more improved compared to the BP. The proposed algorithm achieves the best performance in the entire simulation experiments.

},
	url = {https://www.researchgate.net/publication/312665945_An_improved_back_propagation_algorithm_for_training_neural_network-based_equaliser_for_signal_restoration_in_digital_communication_channels},
	author = {Zerdoumi,  Zohra and Chikouche, Djamel and Benatia, Djamel}
}
@article {4025,
	title = {Study of the Impact of Non-linear Piezoelectric Constants on the Acoustic Wave Propagationon Lithium Niobate},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {8},
	number = {2},
	year = {2016},
	pages = {02013-1 -  02013-5},
	abstract = {
	Impact of nonlinear piezoelectric constants on surface acoustic wave propagation on a piezoelectric substrate is investigated in this work. Propagation of acoustic wave propagation under uniform stress is analyzed; the wave equation is obtained by incorporating the applied uniform stress in the equation of motion and taking account of the set of linear and nonlinear piezoelectric constants. A new method of separation between the different modes of propagation is proposed regarding the attenuation coefficients and not to the displacement vectors. Detail calculations and simulations have made for Lithium Niobate (LiNbO3); transformations between modes of propagation, under uniform stress, have been found. These results leads to conclusion that nonlinear terms affect the acoustic wave propagation and also we can make controllable acoustic devices.

},
	url = {https://www.researchgate.net/publication/304368011_Study_of_the_Impact_of_Non-linear_Piezoelectric_Constants_on_the_Acoustic_Wave_Propagation_on_Lithium_Niobate},
	author = {Chaabane Soumali and Benatia, Djamel}
}
@article {4023,
	title = {Multilayer Perceptron Based Equalizer with an Improved Back Propagation Algorithm for Nonlinear Channels},
	journal = {International Journal of Mobile Computing and Multimedia Communications},
	volume = {7},
	number = {3},
	year = {2016},
	pages = {16-31},
	abstract = {
	Neural network based equalizers can easily compensate channel impairments; such additive noise and inter symbol interference (ISI). The authors present a new approach to improve the training efficiency of the multilayer perceptron (MLP) based equalizer. Their improvement consists on modifying the back propagation (BP) algorithm, by adapting the activation function in addition to the other parameters of the MLP structure. The authors report on experiment results evaluating the performance of the proposed approach namely the back propagation with adaptive activation function (BPAAF) next to the BP algorithm. To further prove its effectiveness, the proposed approach is also compared beside a so known nonlinear equalizer explicitly the multilayer perceptron with decision feedback equalizer MLPDFE. The authors consider various performance measures specifically: signal resorted quality, lower steady state MSE reached and minimum bit error rate (BER) achieved, where nonlinear channel equalization problems are employed.

},
	url = {https://www.researchgate.net/publication/310515907_Multilayer_Perceptron_Based_Equalizer_with_an_Improved_Back_Propagation_Algorithm_for_Nonlinear_Channels},
	author = {Zerdoumi,  Zohra and Chikouche, Djamel and Benatia, Djamel}
}
@article {4010,
	title = {High-Tc superconducting rectangular microstrip patch covered with a dielectric layer, e-ISSN 0921-4534},
	journal = {Physica C: Superconductivity and Its Applications},
	volume = {Volume 524},
	year = {2016},
	pages = {pp 31-36},
	abstract = {This paper presents a full-wave method to calculate the resonant characteristics of rectangular microstrip antenna with and without dielectric cover, to explain the difference of performance with temperature between superconducting and normal conducting antenna. Especially the characteristics of high temperature superconducting (HTS) antenna were almost ideal around the critical temperature (Tc). The dyadic Green{\textquoteright}s functions of the considered structure are efficiently determined in the vector Fourier transform domain. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. The computed results are found to be in good agreement with results obtained using other methods. Also, the effects of the superstrate on the resonant frequency and bandwidth of rectangular microstrip patch in a substrate{\textendash}superstrate configuration are investigated. This type of configuration can be used for wider bandwidth by proper selection of superstrate thickness and its dielectric constants.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921453416300028},
	author = {Bedra Sami and Fortaki Tarek}
}
@article {4009,
	title = {Analysis of elliptical-disk microstrip patch printed on isotropic or anisotropic substrate materials},
	journal = {International Journal of Microwave and Wireless Technologies},
	volume = {8},
	number = {2},
	year = {2016},
	pages = {251-255},
	abstract = {
	This paper presents a simple approach for accurate determination of the resonant frequency of an elliptical microstrip patch printed on isotropic or anisotropic substrate materials. In this approach, some modifications are made to account for fringe fields, dispersion effects, and losses by calculating effective dimensions, effective permittivity of anisotropy in the layer, and effective loss tangent, respectively. The theoretical resonant frequency results are in very good agreement with the experimental results reported elsewhere. Numerical results show that the change in the resonant frequency of the antenna is due primarily to a small disturbance of the substrate{\textquoteright}s nature. Then the effect of the uniaxial anisotropic materials is a significant parameter and most essential on the microstrip antenna characterization.

},
	url = {https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/analysis-of-ellipticaldisk-microstrip-patch-printed-on-isotropic-or-anisotropic-substrate-materials/63B277B000979B1133CAE0C6FB58D24F},
	author = {Bedra , Randa and Bedra, Sami and Fortaki , Tarek}
}
@article {4007,
	title = {Miniature low profile UWB antenna: new techniques for bandwidth enhancement and radiation pattern stability, e-ISSN 1098-2760},
	journal = {Microwave and Optical Technology Letters},
	volume = {Volume 58},
	number = {N{\textdegree}8},
	year = {2016},
	pages = {pp 1808-1813},
	abstract = {A miniature (30 {\texttimes} 10 mm2) efficient planar monopole antenna with stable radiation pattern for UWB applications (3.1-10.6 GHz) is proposed in this paper. These characteristics, wide bandwidth and radiation stability, are achieved by using original design solutions with maintaining a small size and good efficiency of the system. Based on modified ground plane and loop feeding structure, the first design solution consist to propose a simple technique which not requires any discrete additional elements or circuits and does not affect the overall dimensions of the basic structure. This technique enhances the (-6 dB) bandwidth of the planar monopole antenna by approximately 50\% compared to the basic structure while maintaining the same dimension (30 {\texttimes} 10 mm2). The optimized proposed antenna presents a large bandwidth, good radiation stability, total efficiency higher than 70\% over the entire band and small size (30 {\texttimes} 10 mm2) which will enable to use it in different UWB applications. In the second step, two L slots are added in the printed circuit board of the proposed UWB antenna to reach a good stability of the radiation pattern on the overall desired band.},
	url = {https://www.researchgate.net/publication/303597970_Miniature_low_profile_UWB_antenna_New_techniques_for_bandwidth_enhancement_and_radiation_pattern_stability},
	author = {Addaci Rafik and Fortaki Tarek}
}
@article {3993,
	title = {Resonant and Radiation Characteristics of Rectangular Microstrip Patch Antenna on Suspended-Composite Substrates, ISSN 1054-4887},
	journal = {Applied Computational Electromagnetics Society Journal },
	volume = {volume 31},
	number = {N{\textdegree}2},
	year = {2016},
	pages = {pp 138-142},
	abstract = {In this paper, the resonance and radiation characteristics of rectangular microstrip patch printed on suspended and composite substrates are investigated theoretically. The analysis approach is based on the spectral-domain method of moments in conjunction with the stationary phase method. The complex resonant frequency of the microstrip antenna on suspended and composite substrates is studied with sinusoidal functions as basis functions, which show fast numerical convergence. Using a matrix representation of each layer, the far-field pattern of the suspended-composite configuration is efficiently determined by the (TM, TE) representation. The validity of the solution is tested by comparison of the computed results with experimental data. Finally, numerical results for the effects of suspended and composite substrates on the resonant frequency and half-power bandwidth are also presented.},
	url = {https://www.researchgate.net/publication/300335944_Resonant_and_Radiation_Characteristics_of_Rectangular_Microstrip_Patch_Antenna_on_Suspended-Composite_Substrates},
	author = {Bedra Sami and Fortaki Tarek}
}
@article {3970,
	title = {Telescopic Op-Amp Optimization for MDAC Circuit Design, ISSN / e-ISSN 1450-5843},
	journal = {Electronics},
	volume = {volume 20},
	number = { issue 2},
	year = {2016},
	pages = {pp  55-61},
	abstract = {An 8-bit 40-MS/s low power Multiplying Digital-toAnalog Converter (MDAC) for a pipelined-to-Analog to Digital converter (ADC) is presented.The conventional dedicated operational amplifier (Op-Amp) isperformed by using telescopic architecture that features low power and less-area. Further reduction of power and area is achieved by using multifunction 1.5bit/stage MDAC architecture. The design of the Op-Amp is performed by the elaboration of a program based on multiobjective genetic algorithms to allow automated optimization. The proposed program is used tofind the optimal transistors sizes (length and width) in order to obtain the best Op-Amp performances for the MDAC. In this study, six performances are considered, direct current gain, unity-gain bandwidth, phase margin, power consumption, area, slew rate, thermal noise, and signal to noise ratio. The Matlab optimization toolbox is used to implement the program. Simulations were performed by using Cadence Virtuoso Spectre circuit simulator in standard AMS 0.18μm CMOS technology. A goodagreement is observed between the results obtained bythe program optimization and simulation, after that the Op-Ampis introduced in the MDAC circuit to extract its performances.},
	url = {https://www.researchgate.net/publication/312069518_Telescopic_Op-Amp_optimization_for_MDAC_circuit_design},
	author = {Dendouga Abdelghani and Oussalah Slimane}
}
