@mastersthesis {5357,
	title = {Contribution {\`a} l\&$\#$39;{\'e}tude et la mod{\'e}lisation des capteurs {\`a} base de graph{\`e}ne: application au domaine m{\'e}dical},
	year = {In Preparation},
	type = {Doctorat},
	author = {KhalilTamersit}
}
@article {6767,
	title = {Highly efficient ACdTS kesterite solar cell based on a new photovoltaic material},
	journal = {Journal of Physics and Chemistry of Solids},
	volume = {161},
	year = {2022},
	abstract = {
	The\&nbsp;quasiparticle\&nbsp;band structures and optical properties of ACdTS kesterite are investigated here on the basis of first-principles calculations, including the many-body effects theory, by using the GW plus Bethe-Salpeter equation. There were significant GW-quasiparticle corrections, over 0.9\&nbsp;eV, to the GGA-Kohn-Sham band gap. Our calculations also show that ACdTS kesterite had a small binding energy, exhibited\&nbsp;optical absorption\&nbsp;in the visible region, high minority\&nbsp;carrier mobility, and large diffusion in length, rendering this material a promising candidate for solar cells. Based on these findings, we designed and implemented an ACdTS absorber in a thin-film solar cell (TFSC) structure. The new kesterite solar cell has a high efficiency of 11.6\% with a low deficit in the output voltage. Moreover, a strategic combination between the\&nbsp;particle swarm optimization\&nbsp;approach and the ACdTS TFSC decorated with periodic nanowires is proposed to obtain significantly improved\&nbsp;photovoltaic\&nbsp;characteristics. The optimized design identifies a new pathway for a high conversion efficiency of 14\%, far surpassing that provided by the conventional TFSC kesterite.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0022369721005242},
	author = {Ramadan, F.Z and Fay{\c c}al Djeffal and Drissi, Lalla Btissam and Saidi, S and Hichem Ferhati}
}
@article {6761,
	title = {Euclidean distance versus Manhattan distance for skin detection using the SFA database},
	journal = {International Journal of Biometrics},
	volume = {14},
	number = {1},
	year = {2022},
	pages = {46-60},
	abstract = {
	Skin detection is very challenging because of the differences in illumination, cameras characteristics, the range of skin colours due to different ethnicities and many other variations. New effective and accurate methodologies are developed for skin colour detection to easily identify human{\textquoteright}s skin colour threw databases which are specifically designed to assist research in the area of face recognition. One of these is the recently built SFA database that showed high accuracy for segmentation of face images. The approach described in this paper exploits skin and non-skin samples provided by SFA for skin segmentation on the basis of the well-known Euclidean and Manhattan distance metrics. Most importantly, the scheme proposed tries to segment facial colour images inside or outside SFA by means of skin samples belonging to SFA. Simulation results in both SFA and UTD colour face databases indicate that detection rates higher than 95\% can be achieved with either measure.

},
	url = {https://www.inderscienceonline.com/doi/abs/10.1504/IJBM.2022.119553},
	author = {Soltani , Ouarda and Benabdelkader, Souad}
}
@article {6759,
	title = {Inverted PTB7:PC70BM bulk heterojunction solar cell device simulations for various inorganic hole transport materials},
	journal = {Optik},
	volume = {252},
	year = {2022},
	abstract = {
	In this work, an inverted PTB7:PC70BM bulk\&nbsp;heterojunction\&nbsp;solar cells with the configuration of ITO/ZnO/ PTB7:PC70BM / HTMs/Ag for various inorganic materials as a hole transport layer (ZnO, MoO3, NiO, PEDOT: PSS, V2O5\&nbsp;and Cu2O) are simulated by using the GPVDM software which is a free general-purpose tool for the simulation of opto-electronic devices. The influence of the thickness of both PTB7:PC70BM and HTMs layers on the performance of the solar cell are investigated. The obtained results indicated that on regardless on the type of the inorganic material constituted the Hole Transport Material (HTM), the solar cell parameters can be improved by reducing the\&nbsp;HTM thickness\&nbsp;while the active layer optimum thickness is around 90\&nbsp;nm. The performance of the device with all inorganic materials used as HTM reaches the same levels as the PEDOT/PSS for the lower thickness (10\&nbsp;nm). As the thickness is increased, the electrical parameters are significantly enhanced by inserting\&nbsp;cuprous oxide\&nbsp;(Cu2O) compared to the conventional PEDOT: PSS.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402621019501},
	author = {Dridi, Chahrazed and Touafek, Naima and R amdane Mahamdi}
}
@article {6758,
	title = {Metaheuristic-based decision maker framework for the development of multispectral IGZO thin-film phototransistors},
	journal = {Journal of Science: Advanced Materials and Devices},
	volume = {7},
	number = {1},
	year = {2022},
	abstract = {
	A new multispectral InGaZnO (IGZO) thin-film phototransistor (TF PT) based on a graded band-gap (GBG) SiGe capping layer with\&nbsp;metallic nanoparticles\&nbsp;(MNPs) is proposed. An accurate drain-current model is developed to investigate the device performances, where the optical characteristics under different light excitations (530\&nbsp;nm, 820\&nbsp;nm, and 1550\&nbsp;nm) are analyzed using the 3-D Finite-difference time-domain method (FDTD). It is found that the proposed device shows high photoresponse characteristics. Besides, it is revealed that the GBG configuration, MNPs spatial distribution and size can induce a complex behavior, which influences the device photoresponse over multiple spectral bands. Importantly, an iterative decision-maker framework based on the Multi-Objective Genetic Algorithm (MOGA) metaheuristic approach is implemented to design efficient multispectral IGZO TF PT. It is demonstrated that the proposed MOGA-based scheme paves the way for the designer to identify the appropriate GBG profile and MNPs spatial distribution for highly-responsive devices at selective Visible and IR wavelengths and to realize high-performance multispectral sensors. The proposed approach based on combining the proposed IGZO TF PT structure with MOGA metaheuristic computation opens up a new strategy for the design and experimental fabrication of high-performance multispectral optoelectronic devices.

},
	url = {https://www.sciencedirect.com/science/article/pii/S2468217921000964},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Drissi, Lalla Btissam}
}
@article {6757,
	title = {Highly-detective tunable band-selective photodetector based on RF sputtered amorphous SiC thin-film: Effect of sputtering power},
	journal = {Journal of Alloys and Compounds},
	year = {2022},
	abstract = {
	In this paper, a new high-performance tunable band-selective (UV-Visible)\&nbsp;photodetector\&nbsp;(PD) based on RF sputtered a-SiC active layer is demonstrated. SiC thin-films were deposited on glass substrate by RF\&nbsp;magnetron sputtering\&nbsp;method at different sputter power values ranging from 60\&nbsp;W to 120\&nbsp;W. The samples morphological, structural, optical and photodetection properties were investigated by carrying out XRD, SEM, EDS, UV-Vis spectroscopy and photoresponse measurements. It was revealed that the sputtering power could modulate the optical behavior of a-SiC alloy, tuning favorable visible absorbance at high sputter power. This phenomenon is correlated with the influence of the RF power on the SiC film structural properties and compositions. Interestingly, measurements showed that a-SiC PD elaborated at 60\&nbsp;W of RF power can detect UV radiation with a high responsivity of 138\&nbsp;mA/W, low noise effects, superior detectivity of 7.8\&nbsp;{\texttimes}\&nbsp;1012\&nbsp;Jones, while maintaining the visible blindness property. On the other hand, the prepared device at high sputtering power exhibits extended photoresponse characteristics, yielding 426\&nbsp;mA/W and 77\&nbsp;mA/W of responsivity values over UV and visible ranges, respectively. Therefore, the present investigation can provide a new strategy for the design and fabrication of photodetector devices based on SiC platform with broadband and solar-blind adjustable sensing purposes according to the desired application.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838822008556},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and Foughali, L and Benhaya, Abdelhamid and A Saidi}
}
@article {6756,
	title = {Euclidean distance versus Manhattan distance for skin detection using the SFA database},
	journal = {International Journal of Biometrics},
	volume = {14},
	number = {1},
	year = {2022},
	pages = {46-60},
	abstract = {
	Skin detection is very challenging because of the differences in illumination, cameras characteristics, the range of skin colours due to different ethnicities and many other variations. New effective and accurate methodologies are developed for skin colour detection to easily identify human{\textquoteright}s skin colour threw databases which are specifically designed to assist research in the area of face recognition. One of these is the recently built SFA database that showed high accuracy for segmentation of face images. The approach described in this paper exploits skin and non-skin samples provided by SFA for skin segmentation on the basis of the well-known Euclidean and Manhattan distance metrics. Most importantly, the scheme proposed tries to segment facial colour images inside or outside SFA by means of skin samples belonging to SFA. Simulation results in both SFA and UTD colour face databases indicate that detection rates higher than 95\% can be achieved with either measure.

},
	url = {https://www.inderscienceonline.com/doi/abs/10.1504/IJBM.2022.119553},
	author = {Soltani , Ouarda and Benabdelkader, Souad}
}
@article {6755,
	title = {Study of Leaky Acoustic Micro-Waves in Piezoelectric Material (Lithium Niobate Cut Y-X) Using Probabilistic Neural Network (PNN) Classification},
	journal = {INTERNATIONAL JOURNAL OF MICROWAVE AND OPTICAL TECHNOLOGY},
	volume = {17},
	number = {2},
	year = {2022},
	abstract = {
	In this paper, the leaky acoustic microwaves (LAW) in a piezoelectric substrate (Lithium Niobate LiNbO3 Cut Y-X) were studied. The main method for this research was classification using a probabilistic neural network (PNN).The originality of this method is in the accurate values it provides. In our case, this technique was helpful in identifying undetectable waves, which are difficult to identify by classical methods. Moreover, all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity were classified in order to build a model from which we could easily note the Leaky waves. Accurate values of the coefficient attenuation and acoustic velocity for Leaky waves were obtained. Hence, in this study, the focus was on the interesting modeling and realization of acoustic microwave devices (radiating structures) based on the propagation of acoustic microwaves

},
	url = {https://www.researchgate.net/profile/Hichem-Hafdaoui/publication/359203934_Study_of_Leaky_Acoustic_Micro-Waves_in_Piezoelectric_Material_Lithium_Niobate_Cut_Y-X_Using_Probabilistic_Neural_Network_PNN_Classification/links/62318d304ba65b24813421f0/Study-of-},
	author = {Mechnane, Amel and Hafdaoui, Hichem and Benatia, Djamel}
}
@article {6793,
	title = {Highly efficient ACdTS kesterite solar cell based on a new photovoltaic material},
	journal = {Journal of Physics and Chemistry of Solids},
	volume = {161},
	year = {2021},
	abstract = {
	The\&nbsp;quasiparticle\&nbsp;band structures and optical properties of ACdTS kesterite are investigated here on the basis of first-principles calculations, including the many-body effects theory, by using the GW plus Bethe-Salpeter equation. There were significant GW-quasiparticle corrections, over 0.9\&nbsp;eV, to the GGA-Kohn-Sham band gap. Our calculations also show that ACdTS kesterite had a small binding energy, exhibited\&nbsp;optical absorption\&nbsp;in the visible region, high minority\&nbsp;carrier mobility, and large diffusion in length, rendering this material a promising candidate for solar cells. Based on these findings, we designed and implemented an ACdTS absorber in a thin-film solar cell (TFSC) structure. The new kesterite solar cell has a high efficiency of 11.6\% with a low deficit in the output voltage. Moreover, a strategic combination between the\&nbsp;particle swarm optimization\&nbsp;approach and the ACdTS TFSC decorated with periodic nanowires is proposed to obtain significantly improved\&nbsp;photovoltaic\&nbsp;characteristics. The optimized design identifies a new pathway for a high conversion efficiency of 14\%, far surpassing that provided by the conventional TFSC kesterite.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0022369721005242},
	author = {Ramadan, F.Z and Fay{\c c}al Djeffal and Drissi, Lalla Btissam and Saidi, S and Hichem Ferhati}
}
@article {6785,
	title = {Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite},
	journal = {Journal of Alloys and Compounds },
	volume = {859},
	year = {2021},
	abstract = {
	Cost-effective multispectral\&nbsp;photodetectors\&nbsp;(PDs) exhibiting a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse offer an avenue for developing environmental monitoring devices, imaging sensors, object discrimination, and optical links. However,\&nbsp;PDs\&nbsp;based on a single semiconductor as light-sensitive layer are unable to provide broadband photodetection properties. In this work, a new\&nbsp;PD\&nbsp;device based on\&nbsp;ZnO-ZnS\&nbsp;Microstructured Composite (MC) which achieves a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse is demonstrated. The\&nbsp;ZnO-ZnS MC\&nbsp;is elaborated by combining vacuum thermal evaporation technique and a suitable annealing process. Scanning Electron Microscopy (SEM), energy-dispersive\&nbsp;X-ray spectroscopy (EDS),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV-Vis-NIR\&nbsp;spectroscopy were used to elucidate the morphological, structural and optical properties of the prepared sample. It was demonstrated that the\&nbsp;ZnO-ZnS MC\&nbsp;can be useful to enhance the visible absorbance efficiency by promoting efficient light-scattering effects. It is revealed that the prepared\&nbsp;UV-Vis-NIR PD\&nbsp;offers a low dark current of\&nbsp;5\&nbsp;nA, a high\&nbsp;ION/IOFF\&nbsp;ratio of\&nbsp;78\&nbsp;dB\&nbsp;and an enhanced responsivity in\&nbsp;UV, visible and\&nbsp;NIR\&nbsp;ranges. The proposed multispectral\&nbsp;PD\&nbsp;demonstrates a high\&nbsp;ION/IOFF\&nbsp;current ratio under self-powered working regime. Therefore, the proposed\&nbsp;ZnO-ZnS MC\&nbsp;is believed to provide new insights in developing efficient, self-powered and low-cost multispectral\&nbsp;PDs\&nbsp;for high-performance optoelectronic systems.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838820346053},
	author = {Benyahia, Kaddour and Fay{\c c}al Djeffal and Hichem Ferhati and Bendjerad, Adel and Benhaya Abdelhamid and A Saidi}
}
@article {6784,
	title = {Inverted HTS rectangular patch antennas: Theoretical investigation},
	journal = {Physica C: Superconductivity and its Applications},
	volume = {580},
	year = {2021},
	abstract = {
	In this paper, we propose a full-wave analysis for characterizing the resonant frequencies and bandwidths of high-temperature superconductor inverted microstrip printed on anisotropic substrates. Our proposed approach is based on Galerkin procedure in the Fourier transform domain (FTD) combining with the complex resistive boundary condition. With the use of suitable Green{\textquoteright}s functions in the FTD, the analysis is performed for the case where the superconducting rectangular patches printed on anisotropic substrate. The numerical results obtained using the proposed approach are compared with previously published numerical results computed by means of the electromagnetic simulator {\textquotedblleft}IE3D software{\textquotedblright}. These comparisons were very good, which prove the correctness and the validity of the proposed method. It is found that the optical properties combined with optimally chosen structural parameters of anisotropic materials can be maintaining control of the resonant frequency and exhibiting wider bandwidth characteristics.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921453420304007},
	author = {Bedra, Sami and Benkouda , Siham and Bedra , Randa and Fortaki , Tarek}
}
@article {6783,
	title = {Characteristics of HTS inverted circular patches on anisotropic substrates},
	journal = {Journal of Computational Electronics },
	volume = {20},
	year = {2021},
	pages = {892{\textendash}899},
	abstract = {
	In this study, an efficient full-wave method is developed for characterizing the resonant frequencies, bandwidths, and quality factors of an inverted circular superconducting patch antenna. Our technique is based on the Galerkin procedure in the Hankel transform domain (HTD) combined with the complex resistive boundary conditions. With the use of suitable Green{\textquoteright}s functions in the HTD, the analysis is performed for the case where the superconducting circular patches is printed on an anisotropic substrate. The numerical results obtained using this approach are compared with the experimental results. These comparisons were very good, which proves the correctness and the validity of the method. It is found that the optical properties combined with optimally-chosen structural parameters of anisotropic materials can maintain control of the resonant frequency and exhibit wider bandwidth characteristics.

},
	url = {https://link.springer.com/article/10.1007/s10825-020-01596-1},
	author = {Bedra, Sami and Benkouda , Siham and Bedra , Randa and Fortaki , Tarek}
}
@article {6782,
	title = {Resonant Frequency and Bandwidth of Superconducting Microstrip Antenna Fed through a Slot Cut into the Ground Plane},
	journal = {Electronics},
	volume = {10},
	number = {2},
	year = {2021},
	pages = {147},
	abstract = {
	In this work, an efficient analysis is presented to accurately predict the resonant frequency and bandwidth of superconducting microstrip antenna fed through a slot cut into the ground plane. The effect of the superconductivity of the rectangular patch is introduced in the Full-wave analysis based on Gorter-Casimir two fluid model together with London brothers equations. In order to check the accuracy of the proposed approach, the obtained results have been compared with theoretical and experimental data reported in the literature. Finally, the influence of the slot on the resonant frequency and half-power bandwidth of the superconducting antenna has been investigated.\&nbsp;

},
	url = {https://www.mdpi.com/2079-9292/10/2/147},
	author = {Mahamdi , Ahmed and Benkouda , Siham and Aris, Skander and Denidni, Tayeb A}
}
@inbook {6781,
	title = {Design and Optimization of Heterostructure Double Gate Tunneling Field Effect Transistor for Ultra Low Power Circuit and System},
	booktitle = {Electrical and Electronic Devices, Circuits, and Materials: Technological Challenges and Solutions},
	year = {2021},
	abstract = {
	This chapter focuses on double gate (DG) Tunneling Field Effect Transistor (TFET), having band engineering and high - k dielectrics. The basic structure of TFET device is derived and developed by p-i-n diode, containing two heavily doped degenerated semiconductor {\textquotedblleft}p{\textquotedblright} and {\textquotedblleft}n{\textquotedblright} regions and lightly doped intrinsic {\textquotedblleft}i{\textquotedblright} region, respectively. The chapter explores the idea of high-k dielectric engineering as well as band engineering concept with DG -TFET. TFET is a type of field effect device in which current transport phenomena occur due to quantum tunneling between source and channel. The estimation of device characteristics and performance of TFET is time consuming and costly due to lack of rapid advancement in technology. TFET devices have become the most popular switching device among semiconductor players. The chapter summarizes the obtained results by popular device analysis technique, modeling and simulation of DG -TFET.

},
	url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/9781119755104.ch2},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi}
}
@proceedings {6780,
	title = {Germanium \&ndash; InGaZnO heterostructured thinfilm phototransistor with high IR photoresponse},
	journal = {International Conference on SMACD and 16th Conference on PRIME},
	year = {2021},
	address = {online},
	abstract = {
	In this paper, the role of introducing Germanium (Ge)/IGZO heterostructure in enhancing the Infrared (IR) photodetection properties of thin-film phototransistor (Photo- TFT) is presented. Numerical models for the investigated device are developed using ATLAS device simulator. The influence of Ge photosensitive layer thickness on the sensor IR photoresponse is carried out. It is revealed that the optimized IR Photo-TFT based on p-Ge/IGZO heterojunction can offer improved IR responsivity of 4.1{\texttimes}10(exp2) A/W, and over 10(exp6) of sensitivity. These improvements are attributed to the role of the introduced p-Ge/IGZO heterostructure in promoting IR photodetection ability and improved separation and transfer mechanisms of photo-exited electron/hole pairs. The photosensor is then implemented in an optical inverter gate circuit in order to assess its switching capabilities. It is found that the proposed phototransistor shows an improved optical gain thus indicating its excellent performance. Therefore, providing high IR responsivity and low dark noise effects, the optimized Ge/IGZO IR Photo-TFT can be a potential alternative photosensor for designing optoelectronic systems with high-performance and ultralow power consumption.

},
	url = {https://ieeexplore.ieee.org/abstract/document/9547977},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel}
}
@proceedings {6779,
	title = {Performance assessment of a new low-cost RF sputtered Schottky diode based on a-Si/Ti structure},
	journal = {International Conference on SMACD and 16th Conference on PRIME},
	year = {2021},
	address = {online},
	abstract = {
	In this paper, a new efficient and low-cost Schottky Diode (SD) based on a-Si/Ti structure was elaborated using RF magnetron sputtering technique. An exhaustive investigation of structural and electrical properties was performed, where the sputtered device was characterized using X-ray diffraction (XRD) and Keithley (4200-SCS) to measure the current-voltage characteristics. Moreover, a comprehensive study regarding the impact of the Ti layers on the device characteristics is carried out. It was demonstrated that implementing Ti intermediate layers could induce depletion regions at the interfaces, leading to significantly enlarged voltage barrier height. Furthermore, the elaborated SD exhibits a rectification behavior providing an appropriate current with a favorable ideality factor. This is mainly due to the reduced series resistance of the multilayer structure as confirmed by electrical analysis. Therefore, the proposed SD structure based on Ti intermediate layers provides improved performance and can open a new route for the fabrication of promising alternative devices for microelectronic and sensing applications.

},
	url = {https://ieeexplore.ieee.org/abstract/document/9548000},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and Benhaya Abdelhamid}
}
@article {6778,
	title = {Impact of Dielectric Engineering on Analog/RF and Linearity Performance of Double Gate Tunnel FET},
	journal = {International Journal of Nanoelectronics and Materials},
	year = {2021},
	abstract = {
	Tunnel FETisone of thealternativedevicefor low power electronics having steep subthreshold swing and lower leakage current than conventional MOSFET. In this research work, we have implemented the idea of high -k gate dielectric ondouble gate Tunnel FET, DG-TFETfor improvement of device features.An extensive investigation for the analog/RF and linearity feature of DG-TFET has been donehere for low power circuit and system development.Several essential analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS) its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain band width product (GBW), transconductance generation factor (gm/IDS) has been investigated for low power RF applications.The VIP2, VIP3, IMD3, IIP3, distortion characteristics (HD2, HD3), 1- dB the compression point, delay and power delay product performancehave also been throughly studied.It has been observed that the device features discussed for circuitry applications are found to be sensitiveto of gate materials, design configuration and input signals.

},
	url = {https://ijneam.unimap.edu.my/images/PDF/ijneam\%20july\%202021\%20pdf/IJNEAM2021012\%20Accepted.pdf},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi and Boussahla, G}
}
@article {6777,
	title = {Low Power Circuit and System Design Hierarchy and Thermal Reliability of Tunnel Field Effect Transistor},
	journal = {Silicon },
	volume = {14},
	year = {2021},
	pages = {3233{\textendash}3243},
	abstract = {
	Tunnel FET is one of the promising devices advocated as a replacement of conventional MOSFET to be used for low power applications. Temperature is an important factor affecting the performance of circuits or system, so temperature associated reliability issues of double gate Tunnel FET and its impact on essential circuit design components have been addressed here. The temperature reliability investigation is based on double gate Tunnel FET, containing Si1-xGe\&nbsp;x\&nbsp;/Si, source/channel and HfO2\&nbsp;high-k gate dielectric material. During investigation, it has been found that at high temperature application range ~ 300\&nbsp;K - to - 600\&nbsp;K,the Tunnel FET device design parameters exhibit weak temperature dependency with switching current (ION), while the off-state current (IOFF) is slightly varying ~10-17A/μm-to-10-10A/μm. In addition, the impact of temperature on various device design element such as VTH(i.e.,switching voltage),on-current (ION), off-current (IOFF), switching ratio (ION/IOFF) and average subthreshold slope (i.e., SSavg), ambipolar current (IAMB) have been done in this research work.The essential circuit design components for digital and analog/RF applications, such as current amplification factor(gm)\&nbsp;and its derivative (gm{\textquoteright}),the C-V components of device design, Cgg, Cgd and Cgs, cut - off frequency ({\textflorin}T) and gain band width (GBW) product have deeply investigated. In conclusion, the obtained results show that the designed double gate Tunnel FET device configuration and its circuit design components are suitable for ultra-low power circuit,system applications and reliable for hazardous temperature environment.

},
	url = {https://link.springer.com/article/10.1007/s12633-021-01088-2},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi}
}
@article {6776,
	title = {Performance Enhancement in CZTS Solar Cells by SCAPS-1D},
	journal = {International Journal of Thin Film Science and Technology},
	volume = {10},
	number = {2},
	year = {2021},
	abstract = {
	The development of CZTS-based solar cells is limited by two factors, the low open circuit voltage and the conversion efficiency. This is why, in this study, the impact of Cu2ZnSnS4 (CZTS) absorber thin layer parameters on the performance of the proposed MoS2/CZTS/CdS/ZnO heterostructure is simulated by the standard software SCAPS-1D. The improving output performances of this structure; the open circuit voltage (Voc), the short circuit current density (Jsc), the fill factor (FF) and the efficiency (h) are obtained by varying the absorber layer thickness, acceptor carrier concentration NA and taking into account the effect of the electron work function of the back metal contact. The optimized cell provides an energy conversion efficiency of 15.23\% (Voc = 0.99 V, Jsc = 21.89 mA/cm2, FF = 69.79\%) for an optimal thickness of 2 μm, a doping of 1{\texttimes}1016 cm-3. Performance enhancement of the proposed solar cell is subject to the back metal contact, the optimal simulated value of 5.7 eV of which represents that of the Platinum{\textquoteright}s work function Pt. The interest of this simulation makes it possible to adjust the solar cells dimensions, optimize the absorbent layers doping, choose appropriately the back metal contact and therefore help to considerably reduce the various recombination phenomena as well as the secondary phases.

},
	url = {https://digitalcommons.aaru.edu.jo/ijtfst/vol10/iss2/1/},
	author = {Latrous, Ahmed Redha and R amdane Mahamdi and Touafek, Naima and Pasquinelli, Marcel}
}
@article {6775,
	title = {Conduction Band Offset Effect on the Cu2ZnSnS4 Solar Cells Performance},
	journal = {Annales de Chimie - Science des Mat{\'e}riaux },
	volume = {45},
	number = {6},
	year = {2021},
	pages = {431-437 },
	abstract = {
	Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2 , Voc = 0.757 V, FF = 65.6\%, ɳ = 6.9\%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 {\textmu}m) and (ND = 1016 cm-3 ). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1\%, Voc of 0.961 mV, FF of 67.3\% and Jsc of 20.2 mA/cm2 .

},
	url = {http://iieta.org/journals/acsm},
	author = {Latrous, Ahmed Redha and R amdane Mahamdi and Touafek, Naima and Pasquinelli, Marcel}
}
@article {6774,
	title = {Boosting the performance of planar inverted perovskite solar cells employing graphene oxide as HTL},
	journal = {Digest Journal of Nanomaterials and Biostructures },
	volume = {16},
	number = {2},
	year = {2021},
	pages = {705 - 712},
	abstract = {
	The numerical simulation tool SCAPS-1D was used to analyze perovskite solar cell having the architecture ITO/ PEDOT:PSS or GO /CH3NH3PbI3-xClx/ PCBM /Au contains inverted planar hetero-junction device. In this work, we investigated the effect of inserting the Graphene Oxide (GO) as Hole Transport layer (HTL) on the performance of perovskite solar cells. Simulation results show that the use of GO as a hole transport layer is efficient. The efficiency of PSCs based on GO HTL was increased by about 1.6 \% compared to the conventional PEDOT:PSS HTL device. The obtained results of optimizing the thickness of GO HTL exhibited an optimum value around 10 nm with an efficiency of 12.35 \%, Voc of 1.19 V and FF of 54.8 \%. We have also shown that the performance of device for high GO carrier density is a better than with low ones. In addition, increasing the temperature beyond the optimum value obtained around 320 K for both HTL materials (GO and PEDOT:PSS) has detrimental effect on the performance of the perovskite solar cells however the device is more sensitive to the temperature with PEDOT:PSS than the GO ones. The effect of band gap of GO on the performance of device is also studied. The obtained results underline the determining role playedby this parameter with an optimum value around 3.25 eV.

},
	url = {https://chalcogen.ro/705_TouafekN.pdf},
	author = {Touafek, Naima and R amdane Mahamdi and Dridi, Chahrazed}
}
@article {6773,
	title = {Impact of Cathodic Potential on the Growth Mechanisms and Morphology of Ni\&ndash;P Alloys Using Electrodeposition Technique},
	journal = {Transactions on Electrical and Electronic Materials },
	volume = {23},
	year = {2021},
	pages = {52{\textendash}63},
	abstract = {
	Phosphorus nickel alloy, intended for anticorrosion coating, was prepared and deposited at room temperature on copper substrate by chronoamperometry technique in a sulphate bath. The effect of potential on the chemical composition, nucleation and growth, the structure and surface morphology during the electrodeposition of this alloy was presented in this work. X-ray microanalysis showed that the content of phosphorus in the prepared alloys decreases with increasing cathodic potential. Chronoamperograms analysis indicated that the nucleation process is instantaneous and of three-dimensional (3D) growth and is controlled by kinetics. X-ray diffraction analysis revealed an amorphous structure while SEM images showed a smooth appearance with pore presence.

},
	url = {https://link.springer.com/article/10.1007/s42341-021-00318-z},
	author = {Benyekken, C and Benhaya, Abdelhamid and Fay{\c c}al Djeffal and Chahdi, M}
}
@article {6772,
	title = {Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology},
	journal = {Materials Science in Semiconductor Processing},
	volume = {121},
	year = {2021},
	abstract = {In this paper, a new\&nbsp;heterojunction\&nbsp;structure based on ultrathin-film\&nbsp;ITO\&nbsp;sputtered on non-hydrogenated amorphous-silicon (a-Si) is developed for high-detectivity solar-blind\&nbsp;UV-photodetector\&nbsp;(UV-PD)\&nbsp;based on silicon (Si) photonics technology. A strategic combination of\&nbsp;Particle Swarm Optimization\&nbsp;(PSO)\&nbsp;and numerical analysis is used to find out the best design offering superior optoelectronic performance. The\&nbsp;optimized design\&nbsp;is then elaborated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. A comprehensive investigation of the device structural and optoelectronic properties was carried out, incorporating the influence of heat treatment at temperature values ranging from\&nbsp;300{\textdegree}C\&nbsp;to\&nbsp;600{\textdegree}C.\&nbsp;X-Ray Diffraction (XRD) measurements indicate that the\&nbsp;crystallinity\&nbsp;of the sputtered layers was enhanced by increasing the annealing temperature. Significantly, photoelectrical characterization showed that the annealed\&nbsp;ITO/a-Si UV-PD\&nbsp;exhibits high detectivity exceeding\&nbsp;1013\&nbsp;Jones with a highly improved\&nbsp;UV-to-Vis\&nbsp;rejection ratio of\&nbsp;5.7\&nbsp;{\texttimes}\&nbsp;103. The\&nbsp;ITO/a-Si\&nbsp;heterojunction generated a built-in potential, enabling effective separation and transport of photo-induced carriers, thereby reducing\&nbsp;recombination losses. Therefore, by well optimizing the proposed\&nbsp;heterostructure\&nbsp;and the annealing conditions, we were able to elaborate new highly detective, thin-film solar-blind\&nbsp;UV-PD\&nbsp;based on\&nbsp;Si-photonics platform, which can be a promising alternative for future high-performance and cost-effective optoelectronic systems.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S136980012031266X},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and A Saidi and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {6771,
	title = {Effects of annealing process on the structural and photodetection properties of new thin-film solar-blind UV sensor based on Si-photonics technology},
	journal = {Materials Science in Semiconductor Processing},
	volume = {121},
	year = {2021},
	abstract = {
	In this paper, a new\&nbsp;heterojunction\&nbsp;structure based on ultrathin-film\&nbsp;ITO\&nbsp;sputtered on non-hydrogenated amorphous-silicon (a-Si) is developed for high-detectivity solar-blind\&nbsp;UV-photodetector\&nbsp;(UV-PD)\&nbsp;based on silicon (Si) photonics technology. A strategic combination of\&nbsp;Particle Swarm Optimization\&nbsp;(PSO)\&nbsp;and numerical analysis is used to find out the best design offering superior optoelectronic performance. The\&nbsp;optimized design\&nbsp;is then elaborated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. A comprehensive investigation of the device structural and optoelectronic properties was carried out, incorporating the influence of heat treatment at temperature values ranging from\&nbsp;300{\textdegree}C\&nbsp;to\&nbsp;600{\textdegree}C.\&nbsp;X-Ray Diffraction (XRD) measurements indicate that the\&nbsp;crystallinity\&nbsp;of the sputtered layers was enhanced by increasing the annealing temperature. Significantly, photoelectrical characterization showed that the annealed\&nbsp;ITO/a-Si UV-PD\&nbsp;exhibits high detectivity exceeding\&nbsp;1013\&nbsp;Jones with a highly improved\&nbsp;UV-to-Vis\&nbsp;rejection ratio of\&nbsp;5.7\&nbsp;{\texttimes}\&nbsp;103. The\&nbsp;ITO/a-Si\&nbsp;heterojunction generated a built-in potential, enabling effective separation and transport of photo-induced carriers, thereby reducing\&nbsp;recombination losses. Therefore, by well optimizing the proposed\&nbsp;heterostructure\&nbsp;and the annealing conditions, we were able to elaborate new highly detective, thin-film solar-blind\&nbsp;UV-PD\&nbsp;based on\&nbsp;Si-photonics platform, which can be a promising alternative for future high-performance and cost-effective optoelectronic systems.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S136980012031266X},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and A Saidi and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {6770,
	title = {Perovskite/InGaAs tandem cell exceeding 29\% efficiency via optimizing spectral splitter based on RF sputtered ITO/Ag/ITO ultra-thin structure},
	journal = {Physica E: Low-dimensional Systems and Nanostructures},
	volume = {128},
	year = {2021},
	abstract = {
	In this paper, the optimization, elaboration and characterization of an efficient spectral\&nbsp;beam splitter\&nbsp;based on a simple RF sputtered ITO/Ag/ITO (IAI) ultra-thin multilayer structure are presented. An experimental investigation assisted by\&nbsp;Genetic Algorithm\&nbsp;(GA) metaheuristic optimization was carried out to achieve high-performance spectral splitter for tandem solar cell applications. The RF\&nbsp;magnetron sputtering\&nbsp;method was used to elaborate the optimized IAI structure. The optical and structural properties of the sputtered splitter were also analyzed using UV{\textendash}Vis-IR spectroscopy and X-ray diffraction (XRD) measurements. It is found that the elaborated splitter structure offers 84\% of transparency and a high reflectance of 87\% with an optimum cut-off wavelength of 800\&nbsp;nm. This is attributed to the design approach, which leads to promote spectral splitting mechanism by inducing efficient\&nbsp;optical modulation. Interestingly, a new Figure of Merit (FoM) parameter, which evaluates the optical splitting performances is proposed. Moreover, a new Perovskite/InGaAs tandem cell is proposed and analyzed to show the impact of the elaborated spectrum splitter on the solar cell efficiency. It is revealed that the investigated solar cell exhibits an improved efficiency approaching 30\%. The latter value far surpasses that provided by\&nbsp;Perovskite\&nbsp;tandem cells. These results indicate that our spectrum splitting approach can open a new pathway towards designing high-performance tandem\&nbsp;photovoltaic devices.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1386947720316866},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and Benhaya Abdelhamid and A Saidi}
}
@article {6769,
	title = {Multispectral photodetection using low-cost sputtered NiO/Ag/ITO heterostructure: From design concept to elaboration},
	journal = {Ceramics International},
	volume = {47},
	number = {11},
	year = {2021},
	abstract = {
	High-performance multispectral\&nbsp;photodetectors\&nbsp;(PDs) are highly attractive for the emerging optoelectronic applications. In this work, a new broadband PD based on\&nbsp;p-NiO/Ag/n-ITO\&nbsp;heterostructure\&nbsp;was fabricated by RF\&nbsp;magnetron sputtering\&nbsp;technique at room temperature. The tri-layered structure offering multispectral detection property was first identified using theoretical calculations based on combined FDTD and Particle Swarm Optimization (PSO) techniques. The crystal structure of the elaborated sensor was analyzed using X-ray diffraction (XRD) method. The device optical properties were investigated by UV{\textendash}Vis{\textendash}NIR spectroscopy. The NiO/Ag/ITO heterostructured PD shows a high average absorbance of 63\% over a wide spectrum range of [200\&nbsp;nm{\textendash}1100nm]. Compared with NiO and ITO thin-films, the performances of the heterostructured device are considerably enhanced. It was found that the prepared PD with NiO/Ag/ITO heterostructure merges the benefits of multispectral photodetection with reduced\&nbsp;optical losses\&nbsp;and efficient transfer of photo-induced carrier. The device demonstrated a high ION/IOFF\&nbsp;ratio of 78\&nbsp;dB and an enhanced responsivity under UV, visible and NIR lights (171\&nbsp;mA/W at 365\&nbsp;nm, 67\&nbsp;mA/W at 550\&nbsp;nm and 93\&nbsp;mA/W at 850\&nbsp;nm). The broadband photodetection property enabled by the optimized NiO/Ag/ITO heterostructure opens a new route for the elaboration of low-cost devices that can offer multiple sensing purposes, which are highly suitable for optoelectronic applications.




},
	url = {https://www.sciencedirect.com/science/article/pii/S0272884221005034$\#$!},
	author = {Hichem Ferhati and Bendjerad, Adel and Fay{\c c}al Djeffal and Benhaya Abdelhamid and A Saidi}
}
@article {6768,
	title = {Giant responsivity of a new optically controlled graphene UV-phototransistor using graded band-gap ZnMgO gate},
	journal = {Sensors and Actuators A: Physical},
	volume = {325},
	year = {2021},
	abstract = {
	In this work, a new Ultraviolet Optically Controlled Graphene Field-Effect Transistor (UV-OC-GFET) based on Graded Band-Gap (GBG)\&nbsp;ZnMgO\&nbsp;photosensitive-gate is proposed. The device drain current model is numerically developed by self-consistently solving the Schr{\"o}dinger/Poisson equations based on non-equilibrium Green{\textquoteright}s function (NEGF) formalism. The influence of\&nbsp;GBG\&nbsp;strategy with different profiles on the device sensing performances is analyzed. Our investigation reveals that the use of both\&nbsp;GBG ZnMgO\&nbsp;photo-gate and graphene nanoribbon channel offers the dual-benefit of improved electric field distribution in the photosensitive layer and enhanced drain current. This leads to outperforming the device Figure of Merits (FoMs). In this context, it is found that the proposed\&nbsp;UV\&nbsp;sensor with optimized band-gap profile exhibits giant responsivity exceeding\&nbsp;1.5 {\texttimes} 106\&nbsp;A/W with superb detectivity of\&nbsp;7 {\texttimes} 1014\&nbsp;Jones, far surpassing that of the conventional\&nbsp;Si-channel based phototransistors. Therefore, this innovative strategy based on graphene nanoribbon channel combined with\&nbsp;GBG\&nbsp;sensitive-gate pinpoints a new path towards achieving high-performance visible-blind\&nbsp;UV-phototransistor, making it a potential alternative photoreceiver for chip-level optical communication and optoelectronic applications.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0924424721001643},
	author = {Kadri, A and Hichem Ferhati and Djeffal Fay{\c c}al}
}
@article {6765,
	title = {Absorption enhancement in amorphous Si by introducing RF sputtered Tiintermediate layers for photovoltaic applications},
	journal = {Materials Science and Engineering: B},
	volume = {269},
	year = {2021},
	abstract = {
	In this paper, embedded amorphous-silicon (a-Si) and titanium (Ti) ultrathin-films forming a multilayer structure is proposed as a new efficient absorber material for thin-film solar cells (TFSCs). Promising design strategy based on combining\&nbsp;FDTD\&nbsp;(finite difference time domain) with particle swarm optimization (PSO) was adopted to identify the\&nbsp;a-Si/Ti\&nbsp;multilayer structure offering the highest total absorbance efficiency (TAE). It is found that the proposed multilayer structure can serve as an effective absorber, yielding superb\&nbsp;TAE\&nbsp;exceeding\&nbsp;80\%. The\&nbsp;a-Si/Ti\&nbsp;multilayer was then elaborated by successive growth of\&nbsp;a-Si\&nbsp;and\&nbsp;Ti\&nbsp;ultrathin layers using\&nbsp;RF\&nbsp;magnetron sputtering technique. The sputtered\&nbsp;a-Si/Ti\&nbsp;thin-film was characterized by scanning electron microscopy (SEM),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV{\textendash}visible absorption spectroscopy. Measurements showed a unique optical behavior, promoting broadband absorbance over the visible and even\&nbsp;NIR\&nbsp;spectrum ranges. In particular, the prepared\&nbsp;a-Si/Ti\&nbsp;absorber exhibits an optical band-gap of\&nbsp;1.36\&nbsp;eV, which is suitable for photovoltaic applications. A performance assessment of the elaborated absorber was investigated by extracting\&nbsp;I-V\&nbsp;characteristics and electrical parameters under dark and\&nbsp;1-sun\&nbsp;illumination. It is revealed that the proposed absorber demonstrates outstanding electrical and sensing performances. Therefore, promoting enhanced resistive behavior and light-scattering effects, this innovative concept of optimized\&nbsp;a-Si/Ti\&nbsp;multilayer provides a sound pathway for designing promising alternative absorbers for the future development of\&nbsp;a-Si-based\&nbsp;TFSCs.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921510721001124},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Boubiche, N and Benhaya, Abdelhamid and Faerber, J and Le Normand, F, and Javahiraly, N and Fix, T}
}
@article {6764,
	title = {Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector},
	journal = {Journal of Non-Crystalline Solids},
	volume = {574},
	year = {2021},
	abstract = {
	The rapid progress of wide band gap SiC semiconductor material opens up new opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and power systems for a wide range of advanced applications. In this paper, low-noise solar-blind UV\&nbsp;photodetector\&nbsp;(PD) based on all-amorphous ZnO/SiC\&nbsp;heterostructure\&nbsp;was fabricated via RF\&nbsp;magnetron sputtering\&nbsp;technique. The device structural and optical properties were investigated before and after thermal treatment at different annealing temperature values varying from 300\&nbsp;{\textdegree}C to 600\&nbsp;{\textdegree}C. UV-Visible\&nbsp;spectroscopy revealed that the annealing process has a beneficial effect in terms of high UV absorbance and solar-blindness properties. Photoelectrical characterization demonstrated the high UV photoresponse and low dark noise of the prepared UV PD based on all-amorphous ZnO/SiC structure. Improvement of the device performances were achieved by an appropriate annealing process. After post-annealing, the thermally treated ZnO/SiC UV PD at 500\&nbsp;{\textdegree}C exhibits a high detectivity of 2.4\&nbsp;{\texttimes}\&nbsp;1012\&nbsp;Jones, high\&nbsp;signal to noise ratio\&nbsp;of 2.64{\texttimes}105\&nbsp;and a giant UV{\textendash}Vis\&nbsp;rejection ratio of 5.9\&nbsp;{\texttimes}\&nbsp;103. Therefore, the present study may provide new perspectives for fabricating ultralow dark noise solar-blind UV PD based on all-amorphous ZnO/SiC heterostructure, which promotes the development of integrated UV photonic systems based on SiC platform.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0022309321005317},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and A Saidi and Benhaya Abdelhamid}
}
@article {6763,
	title = {Self-powered photodetector with improved and broadband multispectral photoresponsivity based on ZnO-ZnS composite},
	journal = {Journal of Alloys and Compounds},
	volume = {859},
	year = {2021},
	abstract = {
	Cost-effective multispectral\&nbsp;photodetectors\&nbsp;(PDs) exhibiting a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse offer an avenue for developing environmental monitoring devices, imaging sensors, object discrimination, and optical links. However,\&nbsp;PDs\&nbsp;based on a single semiconductor as light-sensitive layer are unable to provide broadband photodetection properties. In this work, a new\&nbsp;PD\&nbsp;device based on\&nbsp;ZnO-ZnS\&nbsp;Microstructured Composite (MC) which achieves a high\&nbsp;UV-Visible-NIR\&nbsp;photoresponse is demonstrated. The\&nbsp;ZnO-ZnS MC\&nbsp;is elaborated by combining vacuum thermal evaporation technique and a suitable annealing process. Scanning Electron Microscopy (SEM), energy-dispersive\&nbsp;X-ray spectroscopy (EDS),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV-Vis-NIR\&nbsp;spectroscopy were used to elucidate the morphological, structural and optical properties of the prepared sample. It was demonstrated that the\&nbsp;ZnO-ZnS MC\&nbsp;can be useful to enhance the visible absorbance efficiency by promoting efficient light-scattering effects. It is revealed that the prepared\&nbsp;UV-Vis-NIR PD\&nbsp;offers a low dark current of\&nbsp;5\&nbsp;nA, a high\&nbsp;ION/IOFF\&nbsp;ratio of\&nbsp;78\&nbsp;dB\&nbsp;and an enhanced responsivity in\&nbsp;UV, visible and\&nbsp;NIR\&nbsp;ranges. The proposed multispectral\&nbsp;PD\&nbsp;demonstrates a high\&nbsp;ION/IOFF\&nbsp;current ratio under self-powered working regime. Therefore, the proposed\&nbsp;ZnO-ZnS MC\&nbsp;is believed to provide new insights in developing efficient, self-powered and low-cost multispectral\&nbsp;PDs\&nbsp;for high-performance optoelectronic systems.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925838820346053},
	author = {Benhaya, K and Fay{\c c}al Djeffal and Ferhati Hichem and Bendjerad, Adel and Benhaya, Abdelhamid and A Saidi}
}
@article {6762,
	title = {Microstructured ZnO-ZnS composite for earth-abundant photovoltaics: Elaboration, surface analysis and enhanced optical performances},
	journal = {Solar Energy},
	volume = {218},
	year = {2021},
	pages = {312-319},
	abstract = {
	In this paper,\&nbsp;ZnO-ZnS\&nbsp;composite structure is proposed as a new efficient and earth-abundant absorber material for thin-film solar cells (TFSCs). Promising elaboration strategy based on combining vacuum thermal evaporation technique and oxidation process under an annealing temperature of\&nbsp;500\&nbsp;{\textdegree}C\&nbsp;was used to prepare\&nbsp;ZnO-ZnS\&nbsp;composite with high sun-light absorption capabilities. The fabricated microstructure was then characterized by Scanning Electron Microscopy (SEM), energy-dispersive\&nbsp;X-ray spectroscopy (EDS),\&nbsp;X-ray diffraction (XRD), and\&nbsp;UV{\textendash}Visible absorption spectroscopy. The influence of the annealing time on the structural and optical performances of the prepared samples was investigated. Surface analysis demonstrated the\&nbsp;ZnO\&nbsp;decoration of\&nbsp;ZnS\&nbsp;thin-film, where\&nbsp;SEM\&nbsp;images showed dense and pinhole-free\&nbsp;ZnO-ZnS\&nbsp;composite with micrometer-sized grains and a few voids visible at thin-films surface. Optical characterization showed that the prepared thin-film absorber exhibits an optical band-gap of\&nbsp;2.65\&nbsp;eV\&nbsp;with a high Total Absorption Efficiency (TAE) of\&nbsp;62\%\&nbsp;and an absorption coefficient exceeding\&nbsp;2\&nbsp;{\texttimes}\&nbsp;104\&nbsp;cm-1. In addition,\&nbsp;I-V\&nbsp;characteristics under dark and\&nbsp;1-sun\&nbsp;illumination of the microstructured\&nbsp;ZnO-ZnS\&nbsp;composite were extracted. It was revealed that the proposed absorber showcases a high visible photoresponse. Therefore, promoting effective light-scattering effects, this innovative\&nbsp;ZnO-ZnS\&nbsp;composite offers a sound pathway to prepare alternative low-cost absorbers for the future development of\&nbsp;TFSCs.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0038092X21001717},
	author = {Benyahia, Kaddour and Fay{\c c}al Djeffal and Hichem Ferhati and Benhaya, Abdelhamid and Bendjerad, Adel and Djaballah, Y and Martin, N}
}
@article {6760,
	title = {New modeling approach of laser communication in constellation and through atmospheric disturbances},
	journal = {Bulletin of Electrical Engineering and Informatics},
	volume = {10},
	number = {4},
	year = {2021},
	abstract = {
	Laser communication between satellites in the constellation and from the satellites to ground stations offers a gigantic data rate for the users. This principal advantage drives telecom companies to develop this technology to use it like a carrier signal, the most disadvantage of this technology is the need to very complicated pointing systems between the transmitter and the receiver due to a very small beam divergence, continually moving of satellites in orbits and the distance between the satellites (tens of thousands of kilometers). The laser beam suffers continuously from several factors like atmospheric turbulences, internal and external vibrations. All these factors lead to an increase in the bit errors rate and cause degradation in the communication quality. This paper deals with a new method of modelisation of external effects in transmission of signal light from a ground station to the satellite through atmospheric disturbances. Indeed, an in-depth investigation, of the influences of satellite vibrationsinlaser signal transmission between satellites constellation, has been conducted by studying the effect of the intensity of vibrations on the optical signal amplitude. Some solutions are proposed to improve the efficiency of optical satellites communications.

},
	url = {https://www.beei.org/index.php/EEI/article/view/2792},
	author = {Chenina, Hachemi and Benatia, Djamel and Boulakroune, M{\textquoteright} Hamed}
}
@article {6794,
	title = {Bathocuproine Buffer Layer Effect on the Performance of Inverted Perovskite Solar Cells},
	journal = {Journal of Technology Innovations in Renewable Energy},
	volume = {20},
	year = {2020},
	abstract = {
	To boosting the performance of inverted p-i-n-type planar hetero-junction architecture photovoltaic cells based on CH3NH3PbI3\&nbsp;perovskite materials, a thin buffer layer Bathocuproine (BCP) is introduced between the Electron Transporting Layer (ETL) PCBM and the metal contact. The trends in parameters Perovskite Solar Cells (PSCs) inserting BCP is studied using solar cell capacitance simulator (SCAPS-1D). The obtained results of optimizing the thickness of the Bathocuproine (BCP) buffer layer exhibited optimum value at 5 nm, with power conversion efficiency (PCE) of 17.30 \%,\&nbsp;VOC\&nbsp;of 1.39 V, and FF of 62.89 \%. The carrier concentration was higher than 1017\&nbsp;cm-3\&nbsp;increases sharply the conversion efficiency by about 0.35-2.3 \%. Further, the lower metal work function (Фm\&lt;4.3 eV) enhances the electrical parameters where the efficiency up to 21.3 \%.

},
	url = {https://www.lifescienceglobal.com/pms/index.php/jtire/article/view/7107},
	author = {Touafek, Naima and Dridi, Chahrazed and R amdane Mahamdi}
}
@article {6792,
	title = {Effect of the source solution quantity on optical characteristics of ZnO and NiO thin films grown by spray pyrolysis for the design NiO/ZnO photodetectors},
	journal = {Optical Materials },
	volume = {108},
	year = {2020},
	abstract = {
	Zinc Oxide (ZnO) and Nickel Oxide (NiO)\&nbsp;thin films\&nbsp;were prepared using the\&nbsp;spray pyrolysis\&nbsp;technique using three different quantities of solution 5, 10, and 15\&nbsp;ml, to modify their optical properties. Optical characterization of the obtained thin films showed that the bandgap and the transparency of NiO and ZnO decrease with increasing solution quantity. The films are highly transparent making them suitable for optoelectronic applications. It is worth noting that NiO has a low growth rate compared to ZnO due to its larger bandgap. The different parameters obtained for both films are then used to simulate the electrical characteristics and the responsivity of a NiO/ZnO\&nbsp;heterojunction\&nbsp;based PN\&nbsp;photodiode. Both the electrical characteristics and the responsivity improve with increasing quantities of solution. These findings may help to find an optimal design for photodiode fabrication.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925346720307758},
	author = {Hakkoum, Hadjer and Tibermacine, Toufik and Sengouga, Nouredine and Belahssen, Okba and Ghougali, Mebrouk and Benhaya, Abdelhamid and Moumen, Abderrahim and Cominie, Elisabetta}
}
@article {6791,
	title = {Highly sensitive, ultra-low dark current, self-powered solar-blind ultraviolet photodetector based on ZnO thin-film with an engineered rear metallic layer},
	journal = {Materials Science in Semiconductor Processing },
	volume = {110},
	year = {2020},
	abstract = {
	In this paper, novel self-powered, solar-blind\&nbsp;UV\&nbsp;photodetector\&nbsp;(PD) designs based on a\&nbsp;ZnO\&nbsp;thin-film with engineered back metal layer (BML) were fabricated by\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;and e-beam evaporation techniques. An exhaustive study concerning the impact of dissimilar\&nbsp;BML\&nbsp;(Au\&nbsp;and\&nbsp;Ni) on the device structural, optical and electrical properties was carried out. The measured\&nbsp;I{\textendash}V\&nbsp;curves illustrated an asymmetrical behavior, enabling a clear and distinctive\&nbsp;photovoltaic\&nbsp;mode. Superb sensitivity of\&nbsp;107,\&nbsp;high\&nbsp;ION/IOFF\&nbsp;ratio of 149dB, ultralow dark-noise current less than\&nbsp;11pA\&nbsp;and\&nbsp;responsivity\&nbsp;exceeding\&nbsp;0.27A/W were reached for the prepared\&nbsp;ZnO-based\&nbsp;UV-PDs\&nbsp;in self-powered mode. The role of the engineered\&nbsp;BML\&nbsp;in promoting effective separation and transfer of the photo-induced carriers was discussed using the band-diagram theory. The influence of the\&nbsp;annealing process\&nbsp;on the\&nbsp;UV-sensor performance was also investigated. The annealed device at\&nbsp;500{\textdegree}C\&nbsp;demonstrated a lower dark current of a few picoamperes and a high rejection ratio of\&nbsp;2.2{\texttimes}103,\&nbsp;emphasizing its exciting visible blindness characteristics.\&nbsp;Therefore, the use of an engineered\&nbsp;BML\&nbsp;with optimized annealing conditions open up new perspectives to realizing high-performance, self-powered solar-blind\&nbsp;UV-PDs\&nbsp;based on simple thin-film-ZnO\&nbsp;structure strongly desirable for various optoelectronic applications.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S136980011932164X},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Benhaya, Abdelhamid and Martin, N}
}
@article {6790,
	title = {Mechanical response of η-layered borophene: impact of strain, temperature, vacancies and intercalation},
	journal = {Eur. Phys. J. Appl. Phys},
	volume = {90},
	number = {3},
	year = {2020},
	abstract = {
	The mechanical behavior of few-layered borophene (η-LB), at different temperatures ranging from 10 to 800 K in conjunction with a variant strain-rate, is studied by employing molecular dynamics simulations based on the Stillinger-Weber potential. The uniaxial tensile deformations along the zigzag- and armchair-direction of the hexagonal lattice are considered for\&nbsp;η-LB, with\&nbsp;η\&nbsp;= 1, 2, 3, 4. We find an extremely anisotropic mechanical response. Parameters such as Young{\textquoteright}s modulus and fracture strength are higher along the armchair-traction than the zigzag one due to the corrugated structure along the zigzag-axis. The fracture resistances of\&nbsp;η-LB are strongly sensitive to temperature, while their dependence on the strain-rate is relatively low. The influence of nitrogen intercalation as well as vacancy defects on elastic behavior is also determined and discussed. The results are significantly affected by the defect{\textquoteright}s type, concentration, and location. Our findings provide useful insights for the design of LB for many applications requiring a practical large magnitude strain engineering.

},
	url = {https://www.epjap.org/articles/epjap/abs/2020/06/ap200119/ap200119.html},
	author = {Saaoud, Mohamed and Sadki, Kawtar and Drissi, Lalla Btissam and Fay{\c c}al Djeffal}
}
@article {6789,
	title = {Novel solar-blind ultraviolet photodetector based on inserting sputtered ITO ultrathin film for integrated silicon photonics platform},
	journal = {Superlattices and Microstructures },
	volume = {143},
	year = {2020},
	abstract = {
	In this paper, a new\&nbsp;UV-photodetector\&nbsp;(UV PD)\&nbsp;design based on non-hydrogenated amorphous-silicon (a-Si) was fabricated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. The proposed structure consists on sputtering an\&nbsp;ITO\&nbsp;thin-film acting as a passivation layer on the\&nbsp;a-Si\&nbsp;layer to form a\&nbsp;heterostructure\&nbsp;design compatible with silicon photonics technology.\&nbsp;X-Ray Diffraction (XRD) and\&nbsp;UV{\textendash}Vis\&nbsp;spectra were carried out to assess the device structural and optical properties. Measurements emphasized the amorphous state of the sputtered\&nbsp;Si\&nbsp;thin-film. Interestingly, it was found that the elaborated device shows an exciting\&nbsp;UV\&nbsp;absorption capability (over than\&nbsp;95\%) with drastically reduced visible photoresponse. The elaborated\&nbsp;ITO/a-Si UV PD\&nbsp;exhibits an ultra-low dark current less than\&nbsp;1\&nbsp;pA, a good responsivity of\&nbsp;0.13 A/W and a high\&nbsp;ION/IOFF\&nbsp;ratio of\&nbsp;2.5\&nbsp;{\texttimes}\&nbsp;104. Besides, the device demonstrates a high\&nbsp;UV-to-Vis\&nbsp;ratio exceeding\&nbsp;2.3\&nbsp;{\texttimes}\&nbsp;103, thus confirming its visible blindness property. These enhancements are attributed to the role of\&nbsp;ITO/a-Si\&nbsp;heterostructure\&nbsp;in promoting near-perfect\&nbsp;UV\&nbsp;absorption. In addition, this structure generates an electric field acting as effective driving force of the photo-induced\&nbsp;e/h\&nbsp;pairs, which leads to enhance the device generation/collection efficiency. Therefore, the use of\&nbsp;ITO/a-Si\&nbsp;design opens up new pathways for designing novel solar-blind\&nbsp;UV PDs\&nbsp;potentially appropriate for integrated silicon photonics technology.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S074960362030224X},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Bendjerad, Adel and A Saidi and Benhaya, Abdelhamid}
}
@article {6788,
	title = {Performance assessment of a new infrared phototransistor based on JL-TFET structure: Numerical study and circuit level investigation},
	journal = {Optik },
	volume = {223},
	year = {2020},
	abstract = {
	This work aims to investigate the performance of a new Junctionless (JL)\&nbsp;Ge-gate Tunneling-FET\&nbsp;phototransistor\&nbsp;for Infrared sensing applications. The electrical and optical performances of the considered sensor are numerically analyzed, where both switching and optoelectronic properties are reported. In this context, we address the influence of the\&nbsp;Ge-gate doping level and high-k\&nbsp;gate dielectric\&nbsp;on the variation of optical Figures-of-Merit (FoMs) parameters such as\&nbsp;responsivity,\&nbsp;ION/IOFF\&nbsp;ratio and optical commutation speed. Interestingly, it was revealed that the proposed design provides promising pathways for enhancing the phototransistor\&nbsp;FoMs\&nbsp;as compared to the conventional\&nbsp;FET-based sensors. In the second stage of our investigation, we provide a performance assessment of the proposed phototransistor by analyzing its switching capabilities as compared to the conventional design, where the device is implemented in an optical\&nbsp;inverter\&nbsp;circuit. The obtained results indicate the superior optoelectronic performance offered by the proposed design in comparison with the conventional devices in terms of optical commutation speed and optoelectronic gain. Therefore, this contribution can provide new insights concerning the benefit of adopting\&nbsp;JL-TFET\&nbsp;design for future high-performance and ultra-low power deep submicron CMOS optoelectronic applications.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402620313073},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Drissi, Lalla Btissam}
}
@article {6787,
	title = {ECS TransactionsStudy of Si(100)-SiO2 Interface Trap Time Constant Distributions in Large Area Conventional MOSFETs-Comparison with Submicron Devices},
	journal = {ECS Transactions},
	volume = {97},
	number = {1},
	year = {2020},
	abstract = {
	Pb0 centers are the main defects at the Si(100)/SiO2\&nbsp;interface in conventional MOS transistors. Besides, the charge pumping (CP) technique in which a MOSFET is repeatedly switched between inversion and accumulation has been widely used for studying single capture/emission events in deep submicron transistors. In CP, the minority carriers stored into interface traps in inversion recombine in accumulation with majority carriers from the substrate (n-channel case). This provides a CP current which can be studied. When it was accepted that in submicron MOSFETs the CP current was given by Icp = f.q.N, where f is the gate signal frequency, q the electron charge, N the number of traps entering Icp, recently, Tsuchiya and co-workers, pointed out steps heights equal to 2.q: Pb0 centers with their donor-like and acceptor-like states in the lower and upper halves of the silicon bandgap, respectively were therefore measured for the first time in submicron devices. In the present paper, the traps remaining electrically active at the Si(100)-SiO2\&nbsp;interface in large area conventional MOSFETs after the full technological process including forming gas annealing are studied. This is achieved using techniques developed in recent years that use the variation of the gate signal frequency for different gate voltage swings. The trap time constant distributions that exist at this interface are studied as function of gate voltage and gate signal frequency. The results are discussed with regard to the CP models previously proposed and to CP curves simulation.

},
	url = {https://iopscience.iop.org/article/10.1149/09701.0083ecst/meta},
	author = {Bauza, Daniel and Naima Guenifi}
}
@article {6786,
	title = {Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications},
	journal = {International Journal of Nanoparticles and Nanotechnology},
	year = {2020},
	abstract = {
	The present research letter is dedicated to a detailed analysis of a double-gate tunnel field-effect transistor (DG-TFET). The DG-TFET provides improved on-current (ION) than a conventional TFET via bandto-band (B2B) tunneling. However, DG-TFET is disadvantageous for low-power applications because of increased off-current (IOFF) due to the large ambipolar current (Iamb). In this research work, a Si/GaAs/ GaAs heterostructure DG-TFET is considered as research base for investigation of device performance. The electrical parameters of the DG-TFET device have been improved in comparison to the homostructure. The transfer (I-V) characteristics, capacitance - voltage (C-V) characteristic of homo structure Si/ Si/Si and hetero structure Si/GaAs/GaAs, DG-TFET both structures is analysed comparatively. The C-V characteristics of DG-TFET have obtained using operating frequency of 1 MHz. The ambipolar current Iamb is suppressed by 5 {\texttimes} 108 order of magnitude in proposed Si/GaAs/GaAs hetero DG-TFET as compared to Si/Si/Si homo DG-TFET up to the applied drain voltage very low equal to VDS = 0.5 V without affecting on- state performance. The simulation result shows a very good ION/IOFF ratio (1013) and low subthreshold slope, SS (~36.52 mV/dec). The various electrical characteristics of homo and hetero DGTFET such as on-current (ION), off - current (IOFF), time delay (ιd ), transconductance (gm) , and power delay product (PDP) have been improve in Si/GaAs/GaAs heterostructure DG-TFET and compared with Si/Si/ Si homo DG-TFET. The advantageous results obtained for the proposed design show its usability in the field of digital and analog applications.

},
	url = {https://pdfs.semanticscholar.org/775f/73691357064bbce80917bd3353cc26aeeb1b.pdf},
	author = {Naima Guenifi and Rahi, SB and Larbi,  M}
}
@book {6184,
	title = {Comparison between Boron and Phosphorus Diffusion profiles in MOS Transistors using SILVACO ATHENA and Matlab in both 2D and 3D},
	year = {2019},
	pages = {52},
	publisher = {Editions universitaires europeennes},
	organization = {Editions universitaires europeennes},
	abstract = {
	Dopant diffusion in semiconductors is a very important in process step of device. diffusion has a great influence on the electrical and electronic properties especially in the lacunary and interstitial mechanismis. This chapter investigates the diffusion of P and B in Si. The profiles have been simulated using Secondary Ion Mass Spectrometry (SIMS) modele [1,2]. In the process for manufacturing MOS transistor, the manufacturers follow basically three steps. The starting substrate is a monocrystalline silicon wafer. The first step consists in producing the polysilicon gate on a thin layer of SiO2 followed by implantation (boron) of the gate. The second step is the training of source-drain junctions by ion implantation to high dose (≈ 10 15 at / cm2) and the third is to silicide the source-drain junctions for reduce the contact resistance. One of the most promising silicides is the monosilicide of nickel (NiSi). therefore, it is very important to understand the redistribution of dopants in the different active parts of a transistor by studying the following points: {\textbullet} The redistribution of boron in polycrystalline silicon (gate), {\textbullet} The redistribution of boron in the monocrystal

},
	url = {https://my.editions-ue.com/catalog/details/store/gb/book/978-613-8-48769-2/comparison-between-boron-and-phosphorus-diffusion-profiles-in-mos-tran},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@mastersthesis {5360,
	title = {Contribution {\`a} l\&$\#$39;am{\'e}lioration du rendement de cellule soalire {\`a} h{\'e}t{\'e}rostructures},
	year = {2019},
	author = {Kalinka Kacha}
}
@mastersthesis {5359,
	title = {Contribution to the modeling and optimization of new opto{\'e}lectronic devices},
	year = {2019},
	author = {Ferhati Hichem}
}
@mastersthesis {5344,
	title = {Etude des micro-actionneurs {\'e}lectrostatiques},
	year = {2019},
	author = {Belkars Ahmed}
}
@mastersthesis {5343,
	title = {Etude et r{\'e}alisation d\&$\#$39;un appareil de mesure de la r{\'e}ponse des capeturs aux ultraviolets},
	year = {2019},
	author = {Belkacemi Nouha and Laidani Abdelkarim}
}
@mastersthesis {5342,
	title = {Contribution {\`a} l\&$\#$39;am{\'e}lioration du biocapteur ISFET {\`a} base de nitrure de silicium},
	year = {2019},
	author = {Zeghdar Oumeima}
}
@mastersthesis {5341,
	title = {Etude et r{\'e}alisation d\&$\#$39;une serrure intelligente \&quot;Smart Lock\&quot;},
	year = {2019},
	author = {Allaeddine Bouhafna and Bouguenna Abderraouf}
}
@mastersthesis {5331,
	title = {Commande robuste intelligente appliqu{\'e}e au suivi de trajectoires d\&rsquo;un syst{\`e}me robotique},
	year = {2019},
	author = {Benaziza Walid}
}
@mastersthesis {5313,
	title = {Conception et r{\'e}alisation d\&$\#$39;une antenne microruban op{\'e}rant {\`a} la fr{\'e}quence 2,4 GHz},
	year = {2019},
	author = {Merabet, Djamal Eddine}
}
@mastersthesis {5312,
	title = {Fr{\'e}quence de r{\'e}sonance d\&$\#$39;une antenne microbande de forme triangulaire sur substrat ajustable et bicouche},
	year = {2019},
	author = {Rouibak, Ahlem and Arab, Nour El-Houda}
}
@mastersthesis {5307,
	title = {Filtres optiques {\`a} reponse impulsionnelle finie (RIF), filtres {\`a} coefficients reels},
	year = {2019},
	author = {Yahia cherif khaled and Merazga Imane}
}
@mastersthesis {5302,
	title = {Analyse des antennes microbandes supraconductrices de formes r{\'e}guli{\`e}res par la m{\'e}thode de la cavit{\'e}},
	year = {2019},
	author = {AGABA Chahinez and CHEKHAB Hichem}
}
@mastersthesis {5279,
	title = {Conception d\&rsquo;un Convertisseur Analogique Num{\'e}rique Flash 3 Bits en Technologie CMOS 130nm},
	year = {2019},
	author = {Benaouina Souraya}
}
@mastersthesis {5278,
	title = {Design of a 10-Bit Successive Approximation Type Analog to Digital Converter Using TSMC 130nm CMOS Technology},
	year = {2019},
	author = {Abdessamed Elhassen}
}
@mastersthesis {5277,
	title = {CONCEPTION D\&rsquo;UN AMPLIFICATEUR OPERATIONNEL TELESCOPIQUE EN TECHNOLOGIE CMOS 130NM},
	year = {2019},
	author = {FATIHA ARAB}
}
@proceedings {4663,
	title = {Effects of Carrier Mobility and defects on the Recombination Characteristic of P3HT:Graphene Bulk Heterojunction Solar Cell},
	journal = {3{\`e}me congr{\`e}s international sur les {\'e}nergies renouvelables et le d{\'e}veloppement durable ERDD-2019},
	year = {2019},
	url = {http://www.conf-event.com/ERDD/papers/Programme_ERDD{\textquoteright}2019.pdf},
	author = {N. Touafek}
}
@proceedings {4662,
	title = {Impact of the secondary phase ZnS on CZTS performance solar cells},
	journal = {3{\`e}me congr{\`e}s international sur les {\'e}nergies renouvelables et le d{\'e}veloppement durable ERDD-2019},
	year = {2019},
	url = {http://www.conf-event.com/ERDD/papers/Programme_ERDD{\textquoteright}2019.pdf},
	author = {N. Touafek}
}
@proceedings {4631,
	title = {Dectection all types of acoustics microwaves in piezoelectric material (ZnO) by classification using support vector machines (SVM)},
	journal = {International Conference on Electronics and Electrical Engineering- 12-13 November 2018, Bouira- ALGERIA},
	year = {2019},
	address = {Bouira, Algeria},
	abstract = {
	In this paper, we propose a new numerical method for acoustics microwaves detection of an acoustics microwaves signal during the propagation of acoustics microwaves in a piezoelectric substrate Zinc oxide (ZnO) . We have used Support Vector Machines (SVM) ,the originality of this method is the accurate values that provides .this technic help us to identify undetectable waves that we can not identify with the classical methods; in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the types of microwaves acoustics( bulk waves or surface waves or leaky waves) . By which we obtain accurate values for each of the coefficient attenuation and acoustic velocity. This study will be very interesting in modeling and realization of acoustics microwaves devices (ultrasound ,Radiating structures , Filter SAW {\textellipsis}.) based on the propagation of acoustics microwaves.

},
	url = {http://ic3e.univ-bouira.dz/ICEEE/Conference\%20 Program.pdf},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@proceedings {4628,
	title = {Fast and Accurate Model to Determine the Resonant Characteristics of Elliptical Microstrip Patch Antenna},
	journal = {International Conference on Advanced Systems and Electric Technologies (IC_ASET), Tunisie},
	year = {2019},
	url = {https://ieeexplore.ieee.org/abstract/document/8871019},
	author = {Mahamdi Ahmed}
}
@proceedings {4627,
	title = {Artificial Neural Network Model Analysis of Tunable Circular Microstrip Patch Antenna},
	journal = {International Conference on Advanced Systems and Electric Technologies (IC_ASET), Tunisie},
	year = {2019},
	url = {https://ieeexplore.ieee.org/abstract/document/8870988},
	author = {Mahamdi Ahmed}
}
@proceedings {4620,
	title = {Optimization of ZnTe:O solar cell using genetic algorithms},
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634467},
	author = {Lakehal Brahim}
}
@proceedings {4619,
	title = {ANN modeling of an industrial gas sensor behavior},
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634510},
	author = {Kouda Souhil}
}
@proceedings {4618,
	title = {MDAC Design for an 8-bit 40 MS/s Pipelined ADC in a 0.18μm CMOS Process },
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634519},
	author = {Lakehal Brahim}
}
@proceedings {4617,
	title = {Numerical Study of Low Gain Avalanche Detector Performance},
	journal = {Proceedings - International Conference on Communications and Electrical Engineering, ICCEE 2018 },
	year = {2019},
	url = {https://ieeexplore.ieee.org/document/8634532},
	author = {Bendib Toufik}
}
@article {4086,
	title = {Impact of deposition methods and doping on structural, optical and electrical properties of ZnO-Al thin films, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 186},
	year = {2019},
	pages = {pp  293-299},
	abstract = {In this work, thin films of aluminum doped ZnO (AZO) were deposited on ultrasonically cleaned\&nbsp;glass substrates\&nbsp;by\&nbsp;sol-gel process\&nbsp;using dip and spin\&nbsp;coating techniques. For this purpose, Zinc acetate dihydrate, aluminum nitrate nonahydrate, ethanol and mono\&nbsp;ethanolamine\&nbsp;were employed as precursor,\&nbsp;dopant, solvent and stabilizer, respectively.\&nbsp;X-ray diffraction, UV{\textendash}vis,\&nbsp;photoluminescence, 4-point probe and Van der pauw techniques were investigated for the characterization of the prepared AZO thin films.\&nbsp;X-ray-analysis\&nbsp;revealed that all the prepared films have hexagonal\&nbsp;wurtzite\&nbsp;structure with a relative preferential orientation along the c-axis and the\&nbsp;lattice parameters\&nbsp;are close to the standard values reported in literature.\&nbsp;UV{\textendash}vis spectroscopy\&nbsp;showed that the average value of the films{\textquoteright}\&nbsp;transmittance\&nbsp;in the visible region is found to be around 85\% and the gap ranges in the interval [3.15 eV{\textendash}3.30 eV]. The photoluminescence spectrum only showed the UV peak while the broad band of the visible region was completely vanished. The electrical measurements indicate that sol-gel methods provide relatively high\&nbsp;resistivities\&nbsp;compared to those obtained with physical\&nbsp;vapor deposition\&nbsp;(PVD) techniques.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402619306084},
	author = {A.Zaiour and Benhaya Abdelhamid and Bentrcia Toufik}
}
@article {4085,
	title = {Determination of magnetic properties of a Ni/NiO/Ni multilayer:an ANFIS-based predictive technique, ISSN / e-ISSN 0947-8396 / 1432-0630},
	journal = {Applied Physics A},
	volume = {25},
	number = {1~},
	year = {2019},
	pages = {56},
	abstract = {
	In this paper, Ni/NiO/Ni multilayers are deposited on glass substrates using radio frequency magnetron sputtering, where the structural and morphological properties are analyzed using X-ray diffraction besides scanning electron microscopy techniques. The associated magnetic hysteresis loops are obtained by vibrating sample magnetometer for temperatures ranging from - 100 to 300 {\textdegree}C. Hence, the parameters α, β, Bmax, HC, and Br defining a hysteresis loop are determined at each temperature using Preisach model for the first two parameters, while the remaining ones are deduced experimentally. The set of these parameters are introduced within the training data set in the context of an ANFIS-based approach to predict the hysteresis loop of a Ni/NiO/Ni multilayer for any temperature below the Curie temperature. The comparison conducted between theoretical and experimental results showed a good agreement. This work provided more insights regarding the consolidation of experimental characterization with the development of soft computing-based frameworks.

},
	url = {https://www.researchgate.net/publication/330085883_Determination_of_magnetic_properties_of_a_NiNiONi_multilayer_an_ANFIS-based_predictive_technique},
	author = {Bendjerad Adel and Benhaya, Abdelhamid and Bentrcia Toufik and Djeffal Fay{\c c}al and Zergoug, M and Smaili, Fatiha}
}
@article {4084,
	title = {Electron-phonon dynamics in 2D carbon based-hybrids XC (X = Si, Ge, Sn), ISSN / e-ISSN 0953-8984 / 1361-648X},
	journal = {ournal of Physics Condensed Matter },
	volume = { Volume 31},
	number = {N{\textdegree}13},
	year = {2019},
	pages = {pp 135702},
	abstract = {The effect of the presence of electron{\textendash}phonon (e{\textendash}ph) coupling in the SiC, GeC and SnC hybrids is studied in the framework of the\&nbsp;ab initio\&nbsp;perturbation theory. The electronic bang gap thermal dependence reveals a normal monotonic decrease in the SiC and GeC semiconductors, whereas SnC exhibits an anomalous behavior. The electron line widths were evaluated and the contributions of acoustic and optical phonon modes to the imaginary part of the self-energy were determined. It has been found that the e{\textendash}ph scattering rates are globally controlled by the out-of-plane acoustic transverse mode ZA in SiC while both ZA and ZO are overriding in GeC. In SnC, the out-of-plane transverse optical mode ZO is the most dominant. The relaxation lifetime of the photo-excited electrons shows that the thermalization of the hot carrier occurs at 90 fs, 100 fs and 120 fs in SiC, GeC and SnC, respectively. The present study properly describes the subpicosecond time scale after sunlight illumination using an approach that requires no empirical data. The results make the investigated structures suitable for providing low cost and high-performance optical communication and monitoring applications using 2D materials.},
	url = {https://iopscience.iop.org/article/10.1088/1361-648X/aaff3b},
	author = {L.B.Drissi and Kanga Junior and Samir Lounis and Djeffal Fay{\c c}al and S.Haddad}
}
@article {4083,
	title = {Influence of TCO intermediate thin-layers on the electrical and thermal properties of metal/TCO/p-Si Schottky structure fabricated via RF magnetron sputtering},
	journal = {Physica E: Low-dimensional Systems and Nanostructures},
	volume = {106},
	year = {2019},
	pages = {25-30},
	abstract = {In this paper, versatile\&nbsp;Metal/TCO/p-Si\&nbsp;Schottky Barrier\&nbsp;Diodes (SBDs) with dissimilar\&nbsp;TCO\&nbsp;intermediate layers (ZnO\&nbsp;and\&nbsp;ITO) were fabricated by\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. An overall electrical performance comparison between the\&nbsp;Al/ZnO/p-Si, Au/ITO/p-Si\&nbsp;and the conventional\&nbsp;Au/p-Si\&nbsp;structures is carried out. The measured\&nbsp;I-V\&nbsp;characteristics indicate that the proposed\&nbsp;Al/ZnO/p-Si\&nbsp;design exhibits an outstanding capability for achieving a high rectifying ratio of 142 dB. This is mainly due to the enhanced Schottky barrier height (SBH) of\&nbsp;0.75 V and close to unite ideality factor (n = 1.23). Such behavior can be attributed to the enhanced interface quality achieved by introducing\&nbsp;TCO\&nbsp;inter-layers, which could decrease the Series resistance. A comparative study of the elaborated structures performance is carried out in which new Figures of Merit (FoM) parameters that combine both electrical and thermal stability performances are proposed. The Experimental results show that the proposed designs with\&nbsp;ITO\&nbsp;and\&nbsp;ZnO\&nbsp;sub-layers exhibits improved\&nbsp;FoM\&nbsp;parameters as compared to the conventional\&nbsp;Au/p-Si\&nbsp;structure. Moreover, this comparative study enables to the designer to acquire a comprehensive review about the\&nbsp;Si-based\&nbsp;SBDs\&nbsp;design tradeoffs. It is demonstrated that the insertion of a\&nbsp;TCO\&nbsp;inter-layer might be beneficial for avoiding the degradation related-heating effects. Therefore, the proposed designs offer the possibility of bridging the gap between superior electrical performance and high thermal stability, which makes them suitable for developing high-performance Schottky solar cells and sensing applications.},
	url = {https://www.sciencedirect.com/science/article/pii/S1386947718313754},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Kalinka Kacha and Bendjerad, Adel and Benhaya, Abdelhamid}
}
@article {4082,
	title = {Optimized high-performance ITO/Ag/ITO multilayer transparent electrode deposited by RF magnetron sputtering},
	journal = {Superlattices and Microstructures},
	volume = {129},
	number = {3},
	year = {2019},
	pages = {176-184},
	abstract = {This paper presents the optimization, elaboration and characterization of a new\&nbsp;TCO\&nbsp;(Transparent Conductive Oxides)\&nbsp;electrode\&nbsp;based on\&nbsp;ITO/Ag/ITO\&nbsp;multilayer design that enables overcoming the trade-off between the electrical and optical properties. A new hybrid approach combining the investigated design and Particle Swarm Optimization (PSO) technique is conducted with the aim of maximizing the\&nbsp;Haacke\&nbsp;Figures of merit (FoM). It is found that the optimized\&nbsp;ITO/Ag/ITO\&nbsp;tri-layered design paves a new path toward achieving a high\&nbsp;FoM\&nbsp;of\&nbsp;125 {\texttimes} 10-3Ω-1. Such improvement is attributed to the improved light management achieved by the efficient modulation of the\&nbsp;Ag\&nbsp;sub-layer geometry. Subsequently, the optimized multilayer design is fabricated using\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique. The structural, optical and electrical properties associated with the deposited\&nbsp;ITO/Ag/ITO\&nbsp;multilayer structure\&nbsp;are also analyzed. It is found that the fabricated\&nbsp;TCO-based electrode shows a high\&nbsp;transmittance\&nbsp;over than\&nbsp;94.1\%\&nbsp;and a low sheet resistance of\&nbsp;4.5Ω {\texttimes} sq-1, which is in good agreement with the theoretical predictions. Therefore, the proposed design methodology based on experiments assisted by\&nbsp;PSO\&nbsp;metaheuristic approach offers exciting opportunities for bridging the gap between transparency and\&nbsp;conductivity\&nbsp;characteristics. This makes the elaborated\&nbsp;ITO/Ag/ITO\&nbsp;multilayer design suitable for high-performance optoelectronic applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603619304835},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Benhaya, Abdelhamid}
}
@article {4081,
	title = {Effects of annealing temperature and ITO intermediate thin-layer on electrical proprieties of Au/p-Si structure deposited by RF magnetron sputtering, ISSN 0749-6036},
	journal = {Superlattices and Microstructures },
	volume = {128},
	year = {2019},
	pages = {382-391},
	abstract = {In this paper, a new\&nbsp;Au/p-Si\&nbsp;Schottky Barrier\&nbsp;Diode (SBD) based on\&nbsp;Indium\&nbsp;Tin Oxide (ITO) intermediate\&nbsp;thin-film\&nbsp;is proposed and experimentally investigated by including the annealing\&nbsp;temperature effect. We elaborated the\&nbsp;Au/ITO/p-Si\&nbsp;structure by means of\&nbsp;RF\&nbsp;magnetron sputtering\&nbsp;technique and compared its electrical properties with the conventional\&nbsp;Au/p-Si SBD. The role of the annealing process at\&nbsp;200\&nbsp;and\&nbsp;400 {\textdegree}C\&nbsp;as well as the\&nbsp;ITO\&nbsp;interface thin-layer in improving the\&nbsp;SBD\&nbsp;basic electrical parameters is analyzed. The characterization has revealed that a higher Schottky barrier (ϕb) of\&nbsp;0.79V\&nbsp;is achieved. Moreover, close to unit ideality factor of (n = 1.25) and reduced density of states (Nss = 1.5 {\texttimes} 1012cm-2) and series resistance of (Rs = 32Ω) are recorded. These achievements can be attributed to the enhanced interface quality provided by introducing the\&nbsp;ITO\&nbsp;thin-film. Moreover, the annealing process enables improved\&nbsp;crystallinity\&nbsp;and allows efficient rearrangement of atoms at the interfaces. The thermal stability behavior of the investigated designs is analyzed, where new Figure of Merit (FoMs) parameters are proposed. It is found that the annealed\&nbsp;Au/ITO/p-Si\&nbsp;structure offers the opportunity for suppressing the degradation related-heating effects. Therefore, the proposed\&nbsp;Au/ITO/p-Si SBD\&nbsp;pinpoint a new path toward achieving superior electrical characteristics and improved thermal stability, which makes it a potential alternative for high-performance microelectronic and optoelectronic applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603618324765},
	author = {Djeffal Fay{\c c}al and Hichem Ferhati and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {4080,
	title = {Exceeding 30\% efficiency for an environment-friendly tandem solar cell based on earth-abundant Se/CZTS materials, ISSN / e-ISSN 1386-9477 / 1873-1759},
	journal = {Physica E: Low-dimensional Systems and Nanostructures },
	volume = {Volume 109},
	year = {2019},
	pages = {pp 52-58},
	abstract = {In this paper, a new\&nbsp;Se/CZTSSe\&nbsp;tandem solar cell architecture is proposed as a viable approach to reach ultrahigh efficiency values at low fabrication cost. The proposed tandem design consists of a\&nbsp;Se-based top cell with\&nbsp;Ti\&nbsp;intermediate ultra-thin metallic layers (MLs) and a\&nbsp;CZTS\&nbsp;bottom cell with graded band-gap aspect. The role of the introduced design amendments in achieving the dual-benefit of enhanced optical behavior and reduced recombination losses is investigated by means of an accurate numerical modeling. Moreover, a comprehensive study which involves the impact of design parameters such as the\&nbsp;MLs\&nbsp;position and the\&nbsp;CZTSSe\&nbsp;band-gap profile on the device performance is carried out. Moreover, Particle Swarm Optimization (PSO)-based metaheuristic technique is used to boost up the\&nbsp;Se/CZTSSe\&nbsp;tandem cell efficiency by identifying both the suitable position of the introduced ultrathin\&nbsp;MLs\&nbsp;and the appropriate\&nbsp;CZTSSe\&nbsp;band-gap profile. It is found that the adopted optimization approach pinpoints a new path toward achieving over 30\% efficiency, not only it provides the possibility to reduce interface recombination effects by optimizing the band offset at the buffer/absorber interfaces but also enables selecting the most favorable design configuration associated with enhanced optical behavior. This makes the optimized\&nbsp;Se/CZTSSe\&nbsp;tandem solar cell potential alternative for providing high-efficiency and stable tandem solar cell.},
	url = {https://www.sciencedirect.com/science/article/pii/S1386947718317144},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4079,
	title = {Effects of high temperature annealing in enhancing the optoelectronic performance of sputtered ITO/Ag/ITO transparent electrodes, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {130},
	year = {2019},
	pages = {361-368},
	abstract = {
	In this paper, a transparent conductive\&nbsp;ITO/Ag/ITO\&nbsp;(IAI) multilayer structure with a high Haacke Figure of Merit (FoM) far surpassing those found up to now is experimentally demonstrated. An optimized\&nbsp;IAI\&nbsp;multilayer electrode was elaborated by means of\&nbsp;RF\&nbsp;magnetron sputtering technique. The structural and electrical characteristics of the prepared tri-layered design were investigated. The influence of the annealing process on the\&nbsp;IAI\&nbsp;electrode performance was also carried out. Unlike the\&nbsp;IAI\&nbsp;structure as-deposited, it was revealed that the annealed samples maintained an average transparency superior than\&nbsp;89\%. This behavior indicates the effectiveness of the thermal treatment for ensuring favorable light management. In addition, it was found that the annealing process paves a new path toward improving the electrode conductivity, where the heat treated electrode at\&nbsp;600{\textdegree}C\&nbsp;yielded a very low sheet resistance of\&nbsp;2.95Ω {\texttimes} sq-1. Therefore, by well optimizing both\&nbsp;IAI\&nbsp;geometry and annealing conditions, we were able to elaborate high-quality coating with a superior\&nbsp;FoM\&nbsp;of\&nbsp;120.8 {\texttimes} 10-3Ω-1. This makes the sputtered\&nbsp;IAI\&nbsp;multilayer design a suitable alternative to the conventional\&nbsp;ITO-based electrodes for optoelectronic and photovoltaic applications.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603619307608},
	author = {Fay{\c c}al Djeffal and Hichem Ferhati and Benhaya, Abdelhamid and Bendjerad, Adel}
}
@article {4024,
	title = {New Deconvolution Technique to Improve the Depth Resolution in Secondary Ion Mass Spectrometry},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {11},
	number = {2},
	year = {2019},
	pages = {02021-1-02021-5},
	abstract = {
	This paper presents an efficient method for recovery of SIMS signals from strongly noised blurred discrete data. This technique is based on Tikhonov-Miller regularization where a priori model of solution is included. The latter is a denoisy signal obtained using the Kalman filter. This is an interesting estimation method, but it can only be used when the system is described precisely. By comparing the results of the proposed technique with those of the literature, our algorithm gives the best results without artifacts and oscillations related to noise and significant improvement of the depth resolution. While, the gain in FWHM is less improved than those obtained by the wavelet technique. Therefore, this new algorithm can push the limits of SIMS measurements towards its ultimate resolution.

},
	url = {https://www.researchgate.net/publication/https://jnep.sumdu.edu.ua/download/numbers/2019/2/articles/jnep_11_2_02021.pdf},
	author = {Dahraoui, Nadia and Boulakroune, Mhamed and Benatia, Djamel}
}
@article {4021,
	title = {
	Effects of Superstrate Layer on the Resonant Characteristics of Superconducting Rectangular Microstrip Patch Antenna, e-ISSN 1937-8718

},
	journal = {Progress In Electromagnetics Research C},
	volume = {Volume 62},
	year = {2019},
	pages = {pp 57{\textendash}165},
	abstract = {The resonant characteristics of superconducting rectangular microstrip patch antenna witha superstrate layer are investigated using a full-wave spectral analysis in conjunction with the complexresistive boundary condition. The complex surface impedance of superconducting patch is determinedusing London{\textquoteright}s equation and the two-fluid model of Gorter and Casimir. Numerical results using thefull-wave analysis presented here are in excellent agreement with theoretical and experimental resultsavailable in the open literature. Numerical results show that the effect of the superstrate layer on theresonant frequency and half-power bandwidth of the superconducting rectangular patch is stronger thanthat of the structure without superstrate layer as both the thickness and permittivity of the superstrateincrease. Finally, numerical results concerning the effects of the parameters of superstrate-substrateand superconducting patch on the antenna performance are also presented and discussed},
	url = {http://www.jpier.org/PIERC/pierc62/17.15122902.pdf},
	author = {Bedra Sami and Fortaki Tarek}
}
@article {4020,
	title = {Regrouping of acoustics microwaves in piezoelectric material (ZnO) by SVM classifier},
	journal = {International Journal of Digital Signals and Smart Systems},
	volume = {3},
	number = {1/2/3},
	year = {2019},
	pages = {110 - 120},
	abstract = {In this paper, we propose a new numerical method for acoustics microwaves detection of an acoustics microwaves signal during the propagation of acoustics microwaves in a piezoelectric substrate zinc oxide (ZnO). We have used support vector machines (SVMs), the originality of this method is the accurate values that provides this technique help to identify undetectable waves that we can not identify with the classical methods. We classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the types of microwaves acoustics (bulk waves or surface waves or leaky waves). We obtain accurate values for each of the coefficient attenuation and acoustic velocity. This study will be very interesting in modelling and realisation of acoustics microwaves devices (ultrasound, radiating structures, filter SAW{\textellipsis}) based on the propagation of acoustics microwaves.},
	url = {https://www.researchgate.net/publication/337073417_Regrouping_of_acoustics_microwaves_in_piezoelectric_material_ZnO_by_SVM_classifier},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@article {4019,
	title = {Comparative Between (LiNbO3) and (LiTaO3) in Detecting Acoustics Microwaves Using Classification},
	journal = {Journal of Microwave Engineering and Technologies},
	volume = {8},
	number = {1},
	year = {2019},
	pages = {33-43 },
	abstract = {
	Our work is mainly about detecting acoustics microwaves in the type of BAW (Bulk acoustic waves), where we compared between Lithium Niobate (LiNbO3) and Lithium Tantalate (LiTaO3) ,during the propagation of acoustic microwaves in a piezoelectric substrate. In this paper, We have used the classification by Probabilistic Neural Network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity for conclude whichever is the best in utilization for generating bulk acoustic waves.This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.

},
	url = {https://www.researchgate.net/publication/333839891_Comparative_between_LiNbO3_and_LiTaO3_in_detecting_acoustics_microwaves_using_classification},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@article {4018,
	title = {Study of Stacked High Tc Superconducting Circular Disk Microstrip Antenna in Multilayered Substrate Containing Isotropic and/or Uniaxial Anisotropic Materials, e-ISSN},
	journal = {Advanced Electromagnetics},
	volume = {Volume 8},
	number = {N{\textdegree}3},
	year = {2019},
	abstract = {In this paper, we present a rigorous full-wave analysis able to estimate exactly the resonant characteristics of stacked high Tc superconducting circular disk microstrip antenna. The superconducting patches are assumed to be embedded in a multilayered substrate containing isotropic and/or uniaxial anisotropic materials (the analysis is valid for an arbitrary number of layers). London{\textquoteright}s equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disks. Numerical results are presented for a single layer structure as well as for two stacked circular disks fabricated on a double-layered substrate.},
	url = {https://www.aemjournal.org/index.php/AEM/article/view/583},
	author = {Boughrara Akrame Sofiane and Benkouda Siham and Bouraiou Abdelouahab and Fortaki Tarek}
}
@article {4017,
	title = {Study of two-layered circular patch using moment method and genetic Algorithms, e-ISSN 2088-8708},
	journal = {International Journal of Electrical \& Computer Engineering},
	volume = {Volume 9},
	number = {N{\textdegree} 6},
	year = {2019},
	pages = {pp 5368 - 5375},
	abstract = {
	
		In this paper, new expressions for the effective radius and fringing capacitance have been derived to predict accurately the resonant frequency of the two-layered circular microstrip patch antenna. These expressions are obtained based on genetic algorithm and the data base is generated using moment method (MOM). The proposed model is very simple, fast, and valid for an entire range of permittivities and thicknesses of two-layered substrate. The present model has been validated by comparing our numerical results obtained for the resonant frequencies with measurements. Finaly, the effect of the two-layered substrate on the resonant charateristics of the circular microstrip patch antenna has been presented.
	

},
	url = {http://ijece.iaescore.com/index.php/IJECE/article/view/17376},
	author = {Mahamdi Ahmed and Benkouda Siham and Mounir Amir and Bedra Sami}
}
@article {4015,
	title = {Study of an Inverted Rectangular Patch Printed on Anisotropic Substrates },
	journal = {IETE Journal of Research },
	volume = {68},
	number = {2},
	year = {2019},
	abstract = {
	The resonant frequencies and bandwidths of the inverted rectangular patch over anisotropic substrates are investigated in this paper. A rigorous analysis is performed using dyadic Green{\textquoteright}s function formulation in the vector Fourier transform domain. The Galerkin{\textquoteright}s technic is then used in the resolution of the integral equation; the complex resonance frequencies for the TM01 mode are studied with sinusoidal basis functions. The numerical results obtained are compared with previously published numerical results computed by means of the electromagnetic simulator {\textquotedblleft}IE3D software{\textquotedblright}. Good agreement is found in all cases among all sets of results. For an isotropic substrate, it is confirmed that the bandwidth decreases with increasing of air-gap layer for high permittivity and low thickness of the substrate. Also, we show that the resonant frequencies and bandwidths are highly dependent on the permittivity variations alongside the optical axis. Other theoretical results attained display that the resonant frequencies downtrend monotonically with increasing substrate thickness, the diminution being larger for the uniaxial anisotropy of the substrate. Finally, numerical results for the effects of uniaxial anisotropy in the substrate on the radiation of the inverted rectangular microstrip structure are also presented.

},
	url = {https://www.tandfonline.com/doi/abs/10.1080/03772063.2019.1634497},
	author = {Bedra, Sami and Bedra , Randa and Benkouda , Siham and Fortaki , Tarek}
}
@article {3988,
	title = {Neural Network Technique for Electronic Nose Based on High Sensitivity Sensors Array, ISSN / e-ISSN 1557-2064 / 1557-2072},
	journal = {Sensing and Imaging},
	year = {2019},
	abstract = {Electronic Nose, as an artificial olfaction system, has potential applications in environmental monitoring because of its proven ability to recognize and discriminate between a variety of different gases and odors. In this paper, we used a chemical sensor array to develop an electronic nose to detect and identify seven different gases (H2, C2H2, CH4, CH3OCH3, CO, NO2, and NH3). These gas sensors are chosen because of its hierarchical/doped nanostructure characteristics, which give them a very high sensitivity and low response time; we improve the linearity response and temperature dependence using models based on artificial neural networks. We used in Electronic nose a pattern recognition based on artificial neural network, which discriminates qualitatively and quantitatively seven gases and has a fast response.},
	url = {https://link.springer.com/article/10.1007/s11220-019-0233-3},
	author = {S. Khaldi and Dibi Zohir}
}
@article {3960,
	title = {A Comparative Study on Scaling Capabilities of Si and SiGe Nanoscale Double Gate Tunneling FETs ISSN / e-ISSN 1876-990X / 1876- 9918},
	journal = {Silicon-Neth},
	year = {2019},
	pages = {pp 1{\textendash}9},
	abstract = {In the last few years, an accelerated trend towards the miniaturization of nanoscale circuits has been recorded. In this context, the Tunneling Field-Effect Transistors (TFETs) are gaining attention because of their good subthreshold characteristics, high scalability and low leakage current. However, they suffer from low values of the ON-state current and severe ambipolar transport mechanism. The aim of this work is to investigate the performance of SiGe nanoscale Double Gate TFET device including low doped drain region. The electrical performance of the considered device is investigated numerically using ATLAS 2D simulator, where both scaling and reliability aspects of the proposed design are reported. In this context, we address the impact of the channel length, traps density and drain doping parameters on the variation of some figures of merit of the device namely the swing factor and the ION/IOFF\&nbsp;ratio. The obtained results indicate the superior immunity of the proposed design against traps induced degradation in comparison to the conventional TFET structure. Therefore, this work can offer more insights regarding the benefit of adopting channel materials and drain doping engineering techniques for future reliable low-power nanoscale electronic applications.},
	url = {https://link.springer.com/article/10.1007/s12633-019-00190-w},
	author = {Bentrcia Toufik and Djeffal Fay{\c c}al and Hichem Ferhati and Dibi Zohir}
}
@article {3952,
	title = {Determination of magnetic properties of a Ni/NiO/Ni multilayer: an ANFIS-based predictive technique},
	journal = {Applied Physics },
	volume = {125},
	year = {2019},
	abstract = {
	In this paper, Ni/NiO/Ni multilayers are deposited on glass substrates using radio frequency magnetron sputtering, where the structural and morphological properties are analyzed using X-ray diffraction besides scanning electron microscopy techniques. The associated magnetic hysteresis loops are obtained by vibrating sample magnetometer for temperatures ranging from - 100 to 300\&nbsp;{\textdegree}C. Hence, the parameters\&nbsp;α, β, Bmax,\&nbsp;HC, and\&nbsp;Br\&nbsp;defining a hysteresis loop are determined at each temperature using Preisach model for the first two parameters, while the remaining ones are deduced experimentally. The set of these parameters are introduced within the training data set in the context of an ANFIS-based approach to predict the hysteresis loop of a Ni/NiO/Ni multilayer for any temperature below the Curie temperature. The comparison conducted between theoretical and experimental results showed a good agreement. This work provided more insights regarding the consolidation of experimental characterization with the development of soft computing-based frameworks.

},
	url = {https://link.springer.com/article/10.1007/s00339-018-2349-z},
	author = {Bendjerad, Adel and Benhaya, Abdelhamid and Bentercia, Toufik and Fay{\c c}al Djeffal and Zergoug, M and Smaili, F}
}
@mastersthesis {5358,
	title = {Contribution to study and modeling of the nanoscale multi-gate transistor using neural and evolutionary techniques},
	year = {2018},
	type = {Doctorat},
	abstract = {
	La miniaturisation des dimensions du transistor {\'e}tait le facteur principal et le plus important menant aux am{\'e}liorations des performances et du co{\^u}t du circuit int{\'e}gr{\'e} contribuant au d{\'e}veloppement rapide de l{\textquoteright}industrie des semi-conducteurs. Dans cette th{\`e}se, nous proposons tout d{\textquoteright}abord une nouvelle structure MOSFET {\`a} double grille sans jonction (DGJL) bas{\'e}e {\`a} la fois sur la grille double mat{\'e}riaux et les extensions fortement dop{\'e}es li{\'e}es aux drain et source. Des mod{\`e}les analytiques associ{\'e}s au courant de drain, aux param{\`e}tres de performance analogique et radiofr{\'e}quence (RF) sont d{\'e}velopp{\'e}s en incorporant l{\textquoteright}impact d{\textquoteright}une grille {\`a} deux mat{\'e}riaux et deux r{\'e}gions d{\textquoteright}extension fortement dop{\'e}es sur les performances analogique/RF du MOSFET DGJL. Les facteurs de m{\'e}rite (FOM) du transistor, qui r{\'e}gissent le comportement analogique/RF, sont {\'e}galement analys{\'e}es. Les r{\'e}sultats de notre {\'e}tude concernant les performances analogique/RF pour la structure propos{\'e}e sont discut{\'e}s et compar{\'e}s avec ceux d"un MOSFET DGJL conventionnel de dimensions similaires, o{\`u} le dispositif propos{\'e} pr{\'e}sente une excellente capacit{\'e} {\`a} am{\'e}liorer ces performances, et fournit un courant de drain plus {\'e}lev{\'e}. Les r{\'e}sultats d{\'e}livr{\'e}s sont valid{\'e}s par rapport aux donn{\'e}es obtenues {\`a} partir du logiciel TCAD pour une large gamme de param{\`e}tres de conception. De plus, les mod{\`e}les analytiques d{\'e}velopp{\'e}s ont {\'e}t{\'e} adopt{\'e}s comme une fonction objectif pour optimiser les performances analogique/RF du dispositif en utilisant les Algorithmes G{\'e}n{\'e}tiques (AGs). En comparaison avec les donn{\'e}es num{\'e}riques rapport{\'e}es pour la structure MOSFET en mode d"Inversion (IM), nos param{\`e}tres de performance optimis{\'e}s pour le dispositif JL pr{\'e}sentent une am{\'e}lioration en comparaison avec le dispositif en mode d{\textquoteright}inversion. Cette th{\`e}se s"occupe {\'e}galement de l{\textquoteright}immunit{\'e} du dispositif DG MOSFET sans jonctions envers l{\textquoteright}effet de d{\'e}gradation initi{\'e} par les porteurs chauds. En cons{\'e}quence, nous avons d{\'e}montr{\'e} que le DG MOSFET sans jonctions peut {\^e}tre un choix fiable pour am{\'e}liorer les performances relatives aux transistors MOSFET {\`a} l{\textquoteright}{\'e}chelle nanom{\'e}trique pour les applications num{\'e}riques.

},
	url = {http://eprints.univ-batna2.dz/1612/},
	author = {Elasaad Chebaki}
}
@mastersthesis {5356,
	title = {Contribution to the modeling and optimization of nanoscale VSG MOSFETs : Application to the nanoscale circuits design},
	year = {2018},
	author = {Abdelmalek Nidhal}
}
@mastersthesis {5353,
	title = {Etude et r{\'e}alisation d\&rsquo;un variateur de vitesse pour un moteur {\`a} courant continu},
	year = {2018},
	author = {Arioua Nasro}
}
@mastersthesis {5350,
	title = {Etude et r{\'e}alisation d\&rsquo;un onduleur polyphas{\'e} {\`a} commande num{\'e}rique},
	year = {2018},
	author = {Akakba Youness}
}
@mastersthesis {5349,
	title = {Etude et r{\'e}alisation d\&rsquo;un onduleur polyphas{\'e} {\`a} commande analogique MLI-sinus trianglaire},
	year = {2018},
	author = {Hadjira Ilyes amar}
}
@mastersthesis {5348,
	title = {R{\'e}alisation du circuit de commande d\&rsquo;un convertisseur statique {\`a} thyristor},
	year = {2018},
	author = {Mohammed cherif Okba}
}
@mastersthesis {5340,
	title = {Etude et simulation d\&$\#$39;une cellule solaire en couches minces {\`a} base de CIGS sous COMSOL},
	year = {2018},
	author = {Benchaira, Mohamed-Seghir-Massinissa}
}
@mastersthesis {5339,
	title = {Elaboration and characterization byb ellipsometry of thin layers of silicon dioxide},
	year = {2018},
	author = {Mahmoudi Abderrahmane}
}
@mastersthesis {5333,
	title = {Simulation, r{\'e}alisation et caract{\'e}risation d\&$\#$39;une structure Schottky},
	year = {2018},
	author = {Haddad Abdessamed}
}
@mastersthesis {5329,
	title = {Commande robuste appliqu{\'e}e {\`a} la navigation d\&$\#$39;un robot mobile},
	year = {2018},
	author = {Mallem Ali}
}
@mastersthesis {5326,
	title = {Etude et r{\'e}alisation d\&$\#$39;un ralentisseur electronique},
	year = {2018},
	author = {Hanachi Achref}
}
@mastersthesis {5325,
	title = {Etude et r{\'e}alisation d\&$\#$39;un convertisseur {\`a} bande},
	year = {2018},
	author = {Benhizia Amel}
}
@mastersthesis {5324,
	title = {Ralisation d\&$\#$39;un syst{\`e}me de suivi sans fil en temps r{\'e}el de la temp{\'e}rature d\&$\#$39;un patient},
	year = {2018},
	author = {Demagh, Fares Badreddine}
}
@mastersthesis {5317,
	title = {Etude d\&rsquo;une antenne microruban excit{\'e}e par une ligne imprim{\'e}e},
	year = {2018},
	author = {Bouraiou Abdelouahab}
}
@mastersthesis {5316,
	title = {Caract{\'e}risation d\&$\#$39;une antenne microbande coupl{\'e}e par une ouverture de forme rectangulaire. Application {\`a} la r{\'e}alisation d\&$\#$39;une antenne multi bande},
	year = {2018},
	author = {Chouti Leila}
}
@mastersthesis {5315,
	title = {Etude d\&rsquo;une antenne supraconductrice couverte par une couche di{\'e}lectrique},
	year = {2018},
	abstract = {
	L{\textquoteright}objectif de cette th{\`e}se est l{\textquoteright}analyse des antennes microrubans fabriqu{\'e}es {\`a} base de patchs parfaitement conducteurs et supraconducteurs avec et sans couche protectrice utilisant deux m{\'e}thodes diff{\'e}rentes : le mod{\`e}le de la cavit{\'e} bas{\'e} sur les connaissances {\'e}lectromagn{\'e}tiques et l{\textquoteright}approche spectrale conjointement avec les conditions aux limites de la r{\'e}sistivit{\'e} complexe. La premi{\`e}re m{\'e}thode est choisie puisque, contrairement aux m{\'e}thodes rigoureuses, elle fournit une compr{\'e}hension qualitative en plus de requ{\'e}rir des d{\'e}veloppements math{\'e}matiques relativement courts. La deuxi{\`e}me m{\'e}thode est r{\'e}serv{\'e}e {\`a} l{\textquoteright}{\'e}tude des caract{\'e}ristiques de r{\'e}sonance d{\textquoteright}un patch microbande circulaire supraconducteur {\`a} haute temp{\'e}rature critique avec une couche protectrice. Des r{\'e}sultats num{\'e}riques sont pr{\'e}sent{\'e}s pour le mode fondamental aussi bien que pour les modes d{\textquoteright}ordre sup{\'e}rieur. Une {\'e}tude param{\'e}trique est men{\'e}e pour quantifier l{\textquoteright}influence de certains param{\`e}tres {\'e}lectriques et physiques sur les performances de l{\textquoteright}antenne en tenant compte de l{\textquoteright}anisotropie uniaxiale dans le di{\'e}lectrique. Les r{\'e}sultats num{\'e}riques de chaque structure sont compar{\'e}s aux donn{\'e}es th{\'e}oriques et exp{\'e}rimentales report{\'e}es dans la litt{\'e}rature ouverte.

},
	url = {http://eprints.univ-batna2.dz/1625/},
	author = {Bedra , Randa}
}
@mastersthesis {5314,
	title = {Analysis by the full wave approach of patch resonators embedded in multilayered medium containing isotropic dielectrics, anisotropic substances and chiral materials},
	year = {2018},
	author = {BentrciaYoussouf}
}
@mastersthesis {5311,
	title = {Etude de la propagation dans un canal physique pour GSM et UMTS},
	year = {2018},
	author = {A.Aziz Bentouati and Houssam Eddine Zaoui}
}
@mastersthesis {5306,
	title = {Mod{\'e}lisation de la propagation des micro-ondes acoustiques dans les mat{\'e}riaux pi{\'e}zo{\'e}lectriques},
	year = {2018},
	author = {CHIBA FARID}
}
@mastersthesis {5303,
	title = {Etude et Conception des antennes planaires pour les applications ULB},
	year = {2018},
	author = {HAFDAOUI Amira and CHEHAOUI Nora}
}
@mastersthesis {5298,
	title = {Contribution {\`a} l\&rsquo;{\'e}tude et {\`a} la conception des commandes des onduleur},
	year = {2018},
	type = {Doctorat},
	abstract = {
	Les onduleurs sont des convertisseurs DC-AC de plus en plus utilis{\'e}s dans les syst{\`e}mes {\'e}nerg{\'e}tiques, en particulier dans les {\'e}nergies renouvelables. Pour cela, les onduleurs doivent utiliser l{\textquoteright}{\'e}nergie disponible de mani{\`e}re efficace. Ils doivent donc avoir une efficacit{\'e} et une fiabilit{\'e} {\'e}lev{\'e}es. De plus, les performances de ces syst{\`e}mes sont mesur{\'e}es par leur efficacit{\'e}, forme d{\textquoteright}onde et distorsion harmonique de la sortie, et enfin leur co{\^u}t, qui d{\'e}pendent du choix optimal des composants et de la strat{\'e}gie de contr{\^o}le. Dans cette th{\`e}se, nous {\'e}tudierons certaines structures et strat{\'e}gies de contr{\^o}le, en nous concentrant davantage sur la r{\'e}duction de la distorsion harmonique totale (THD). La r{\'e}duction du THD dans les inverseurs multiniveaux n{\'e}cessite la r{\'e}solution d{\textquoteright}{\'e}quations transcendantales non lin{\'e}aires complexes. Sans avoir {\`a} r{\'e}soudre ces {\'e}quations, nous avons propos{\'e} d{\textquoteright}utiliser le r{\'e}cent algorithme firefly (FFA) pour optimiser le THD, en trouvant les meilleurs angles de commutation et en garantissant la minimisation des harmoniques dans une bande passante pr{\'e}d{\'e}finie par l{\textquoteright}utilisateur. Le FFA a {\'e}t{\'e} compar{\'e} {\`a} certains algorithmes largement utilis{\'e}s existants tels que l{\textquoteright}algorithme g{\'e}n{\'e}tique (GA), et a montr{\'e} une convergence plus rapide. Nous avons {\'e}galement choisi d{\textquoteright}utiliser l{\textquoteright}une des meilleures structures mat{\'e}rielles optimis{\'e}es existantes, o{\`u} nous avons valid{\'e} les r{\'e}sultats de la simulation par des tests pratiques. Nous insistons sur le fait que la meilleure conception seule ou la meilleure strat{\'e}gie de contr{\^o}le seule ne peut pas r{\'e}soudre le probl{\`e}me THD {\`a} un co{\^u}t raisonnable. Il est imp{\'e}ratif d{\textquoteright}aborder les deux sujets en m{\^e}me temps. La THD obtenu gr{\^a}ce {\`a} la simulation de l{\textquoteright}onduleur sym{\'e}trique de treize niveaux a {\'e}t{\'e} r{\'e}duite {\`a} 5\% (FFT de 60 harmoniques). Afin de valider les r{\'e}sultats de la simulation, un prototype d{\textquoteright}onduleur sym{\'e}trique de treize niveaux a {\'e}t{\'e} r{\'e}alis{\'e} et pratiquement exp{\'e}riment{\'e} et test{\'e} avec diff{\'e}rentes charges. Par cons{\'e}quent, la THD mesur{\'e}e avec une charge r{\'e}sistive {\'e}tait de 4,7\% sur une bande passante de 3 kHz.

},
	url = {http://eprints.univ-batna2.dz/1656/},
	author = {El Mehdi Belkacem, RIADH}
}
@mastersthesis {5296,
	title = {Etude et mod{\'e}lisation des photopiles de troisi{\`e}me g{\'e}n{\'e}ration },
	year = {2018},
	author = {Lakehal Brahim}
}
@mastersthesis {5295,
	title = {Conception d\&rsquo;un Nez Electronique},
	year = {2018},
	author = {KHALDI Samia}
}
@mastersthesis {5275,
	title = {Conception d\&$\#$39;un MDAC pour CAN pipeline 8 bits},
	year = {2018},
	author = {Tamma Ahmed Yassine}
}
@proceedings {4653,
	title = {Structural and magnetic study of the influence of the thickness on multilayer (Ni/NiO) deposits at room temperature},
	journal = {International Conference on Communications and Electrical Engineering (ICCEE)},
	year = {2018},
	url = {https://ieeexplore.ieee.org/document/8634552},
	author = {Bendjerad Adel}
}
@proceedings {4645,
	title = {Numerical Analysis of 4H-SiC MOSFET Design Including High-k Gate Dielectrics for Power electronic Applications},
	journal = {ICSENT },
	year = {2018},
	url = {https://doi.org/10.1145/3330089.3330470},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4644,
	title = {Device and Circuit Level Performance Analysis of a NewNanoscale DGJL MOSFET Design Using an AccurateNumerical Computation},
	journal = {ICSENT },
	year = {2018},
	url = {https://doi.org/10.1145/3330089.3330471},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4643,
	title = {Simulation and analysis of Graphene-based nanoelectronic circuits using ANN method},
	journal = {NN17},
	year = {2018},
	url = {https://doi.org/10.1016/j.matpr.2018.05.039},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4642,
	title = {ANFIS-based Approach to Predict the Degradation-related Ageing ofJunctionless GAA MOSFET},
	journal = {NN17},
	year = {2018},
	url = {https://doi.org/10.1016/j.matpr.2018.05.038},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4633,
	title = {Improved Sliding Mode Controller Using Backstepping and Fuzzy Logic for a Quadrotor Aircraft},
	journal = {International Symposium on Mechatronics and Renewable Energies (ISMRE{\textquoteright}2018)},
	year = {2018},
	author = {Y. Aoun}
}
@proceedings {4621,
	title = {Artifact removal from electrocardiogram signal: A comparative study S},
	journal = {2018 International Conference on Signal, Image, Vision and their Applications, SIVA 2018 },
	year = {2018},
	url = {https://ieeexplore.ieee.org/document/8661013/},
	author = {Belkacem Samia}
}
@article {4090,
	title = {A novel graphene field-effect transistor for radiation sensing application with improved sensitivity: Proposal and analysis, ISSN 168-9002},
	journal = {Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment},
	volume = {volume 901},
	year = {2018},
	pages = {pp 32-39},
	abstract = {In this paper, a new radiation sensitive\&nbsp;field-effect Transistor\&nbsp;(RADFET)\&nbsp;dosimeter\&nbsp;design based on armchair-edge graphene nanoribbon (AGNR), for high performance low-dose monitoring applications, is proposed through a\&nbsp;quantum simulation\&nbsp;study. The simulation approach used to investigate the proposed\&nbsp;nanoscale\&nbsp;RADFET is based on solving the Schr{\"o}dinger equation using the mode space (MS) non-equilibrium Green{\textquoteright}s function (NEGF) formalism coupled self-consistently with a two dimensional (2D)\&nbsp;Poisson equation\&nbsp;under the ballistic limits. The responsiveness of the proposed RADFET to the modulation of radiation-induced trapped charge densities is reflected via the\&nbsp;threshold voltage, which is considered as a sensing parameter. The dosimeter behavior is investigated, and the impact of variation in physical and geometrical parameters on the dosimeter sensitivity is also studied. In comparison to other RADFETs designs, the proposed radiation sensor provides higher sensitivity and better scalability, which are the main requirements for futuristic dosimeters. The obtained results make the suggested RADFET dosimeter as a viable and attractive replacement to silicon-based MOS dosimeters.},
	url = {https://www.sciencedirect.com/science/article/pii/S0168900218307046},
	author = {KhalilTamersit and Djeffal Fay{\c c}al}
}
@article {4075,
	title = {Characterizing Slow state Near Si-SiO2 in MOS structure},
	journal = {Phosphorus Sulfur and Silicon and the Related Elements},
	volume = {193},
	number = {2},
	year = {2018},
	pages = {88-91},
	abstract = {The Equilibrium Voltage Step (EVS) technique has been used for extraction of depth and energy concentration profile of traps situated in the oxide of a lightly stressed metal-oxide-semiconductor (MOS) structure. This has been achieved up to the very near Si-SiO2 interface. The results are discussed and compared with those obtained using charge pumping (CP) technique. A good agreement is achieved between the trap densities extracted using the two methods even though differences in the shape of the profiles can be observed. The results also very well agree with those published previously using current deep level transient spectroscopy (C-DLTS).},
	url = {https://www.researchgate.net/publication/321845704_Characterizing_Slow_state_Near_Si-SiO_2_in_MOS_structure},
	author = {Naima Guenifi and Bauza, Daniel and R amdane Mahamdi}
}
@article {4074,
	title = {Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D},
	journal = {Phosphorus, Sulfur, and Silicon and the Related Elements },
	volume = {193},
	number = {2},
	year = {2018},
	pages = {92-97},
	abstract = {
	The article introduces the benefits and application features of Silvaco Technology Computer Aided Design{\textquoteleft}TCAD{\textquoteright} tool to predict the performance of electrical components and their reliability. In this work, in order to improve the electrical parameters of MOS transistor such as, threshold voltage and flat band voltage, we have simulated Phosphorus and Arsenic diffusion profiles in three dimensions before and after thermal annealing in a highly doped polysilicon film using the simulator Silvaco TCAD based on Pearson type IV models. The model takes into account the distribution of vacancy mechanisms and effects related to high concentrations, such as the formation of clusters to study solid solubility limit. The results have been analyzed and discussed in order to extract depth of doping (Phosphorus and Arsenic) and they have been able to optimize the silicon oxide thickness, to reduce the penetration of doping. Based on earlier studies a study of the effect of solubility on these profiles was performed

},
	url = {https://www.researchgate.net/publication/321813643_Boron_Phosphorus_and_Arsenic_Diffusion_in_MOS_transistors_Simulation_and_Analyze_in_Both_2D_and_3D},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@article {4073,
	title = {An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab},
	journal = { Phosphorus, Sulfur, and Silicon and the Related Elements },
	volume = {193},
	number = {2},
	year = {2018},
	pages = {98-103},
	abstract = {
	In this paper we have developed an algorithm of boron diffusion after thermal annealing in a highly doped polysilicon film. This algorithm takes into account electrically active point defects by associating some parameters such as boron solubility limit and diffusion coefficient. We have studied effect of annealing temperature in order to perform impact of this parameter on maximum depth diffusion of junction and maximum of concentration by analysis of Secondary Ion Mass Spectrometry (SIMS) profiles. In fact we have proposed numerical model based on Fick{\textquoteright}s equation, resolved by finite difference method under Matlab also we have simulated this phenomenon by Silvaco software.

},
	url = {https://www.researchgate.net/publication/321843791_An_algorithm_for_boron_diffusion_in_MOS_transistors_using_Silvaco_Athena_and_MATLAB},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@article {4054,
	title = { Role of non-uniform Ge concentration profile in enhancing the efficiency of thin-film SiGe/Si Solar Cells, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 158},
	year = {2018},
	pages = {pp 192-198},
	abstract = {
	
		In this paper, graded Ge mole fraction aspect is proposed as a new way to achieve the dual benefit of improved Si/SiGe-based solar cell photoconversion efficiency and suppressed degradation related-dislocation effects. Our purpose resides mainly on decreasing the defect density at the Si/SiGe interface through shifting the Ge concentration gradually with the SiGe absorber layer thickness. Further, a careful mechanism analysis based on investigating numerically the impact of the proposed graded Ge content paradigm on reducing the degradation related-dislocation effect is performed. The advantage of using a SiGe layer with graded Ge concentration instead of a thin-film SiGe alloys is presented. Moreover, the impact of the proposed SiGe layer thickness on the solar cell conversion efficiency is carried out. It is found that the proposed feature brings the opportunity of reducing the lattice mismatch at the Si/SiGe interface, which can in turn improve the Si/SiGe-based solar cell conversion efficiency. In addition, increasing the Ge content progressively suggests the band-gap modulation aspect that enables improving the solar cell optical absorption and the total resistance. Therefore, the proposed design pinpoints a new path toward avoiding recombination losses through suppressing the degradation related-dislocation effects, which makes it potential alternative for providing high-efficiency Si-based solar cells.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402617317187},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4053,
	title = {Optimizing the optical performance of ZnO/Si-based solar cell using metallic nanoparticles and interface texturization, ISSN 0030-4026},
	journal = {Optik - International Journal for Light and Electron Optics},
	volume = {Volume 153},
	year = {2018},
	pages = {pp 43-49},
	abstract = {
	
		In this paper, we propose a new n-ZnO/p-Si hetero-junction solar cell design based on both interface engineering and metallic nanoparticles aspects. The merits of using both metallic nanoparticles and grooves morphology in the ZnO/p-Si interface to improve solar cell optical performance are investigated numerically using accurate solutions of Maxwell{\textquoteright}s equations. It is found that the proposed structure suggests the possibility to achieve the dual role of improved light-scattering in the Si absorber layer as well as enhancing the absorption in the ZnO thin-film through the Surface Plasmon Resonance effect. Besides, the proposed design exhibits superior optical performance and offers improved total absorbance efficiency (TAE) as compared to the conventional counterpart. Moreover, particle swarm optimization (PSO)-based approach is exploited for the geometrical optimization of the proposed design to achieve higher light trapping capability. It is found that the optimized design yields 50\% of relative improvement in the ZnO/p-Si-based solar cell TAE which confirms excellent capability of the proposed design approach for modulating the electric field behavior inside the solar cell structure. The obtained results indicate that the optimized n-ZnO/p-Si hetero-junction solar cell offer the potential for high conversion efficiency at low costs which make it valuable for photovoltaic application.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S003040261731197X},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Kalinka Kacha}
}
@article {4052,
	title = {Graded band-gap engineering for increased efficiency in CZTS solar cells, ISSN / e-ISSN 0925-3467 / 1873-1252},
	journal = {Optical Materials},
	volume = {Volume 76},
	year = {2018},
	pages = {pp 393-399},
	abstract = {In this paper, we propose a potential high efficiency Cu2ZnSn(S,Se)4/CdS (CZTS) solar cell design based on graded band-gap engineering that can offer the benefits of improved absorption behavior and reduced recombination effects. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to determinate the optimal band-gap profile of the amended CZTS absorber layer to achieve further efficiency enhancement. It is found that the proposed design exhibits superior performance, where a high efficiency of 16.9\% is recorded for the optimized solar cell with a relative improvement of 92\%, compared with the reference cell efficiency of 8.8\%. Likewise, the optimized CZTS solar cell with a graded band-gap enables achieving a higher open circuit voltage of 889\&nbsp;mV, a short-circuit current of 28.5\&nbsp;mA and a fill factor of 66\%. Therefore, the optimized CZTS-based solar cell with graded-band gap paradigm pinpoints a new path toward recording high-efficiency thin-film solar cells through enhancing carrier collection and reducing the recombination rate.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0925346718300077},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4051,
	title = {Graded channel doping junctionless MOSFET: a potential high performance and low power leakage device for nanoelectronic applications, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 17},
	number = {Issue 1},
	year = {2018},
	pages = {pp 129-137},
	abstract = {In this paper, a graded channel doping paradigm is proposed to improve the nanoscale double gate junctionless DGJL MOSFET electrical performance. A careful mechanism study based on numerical investigation and a performance comparison between the proposed and conventional design is carried out. The device figures-of-merit, governing the switching and leakage current behavior are investigated in order to reveal the transistor electrical performance for ultra-low power consumption. It is found that the channel doping engineering feature has a profound implication in enhancing the device electrical performance. Moreover, the impact of the high-k gate dielectric on the device leakage performance is also analyzed. The results show that the proposed design with gate stacking demonstrates superior ION/IOFF ratio and lower leakage current as compared to the conventional counterpart. Our analysis highlights the good ability of the proposed design including a high-k gate dielectric for the reduction of the leakage current. These characteristics underline the distinctive electrical behavior of the proposed design and also suggest the possibility for bridging the gap between the high derived current capability and low leakage power. This makes the proposed GCD-DGJL MOSFET with gate stacking a potential alternative for high performance and ultra-low power consumption applications.},
	url = {https://link.springer.com/article/10.1007/s10825-017-1052-1},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4050,
	title = {Role of intermediate metallic sub-layers in improving the efficiency of kesterite solar cells: concept and optimization, ISSN / e-ISSN 2053-1591 / 2053-1591},
	journal = { Materials Research Express},
	volume = {Volume 5},
	number = {N{\textdegree} 3},
	year = {2018},
	pages = {pp 036417},
	abstract = {In this work, versatile CdS/Cu  2  ZnSnS  4 (CZTS) solar cell designs based on intermediate metallic sub-layers (Au, Ti, and Ag) engineering are proposed for enhancing light-scattering behavior and reducing recombination losses. The idea behind this work is to generate optical confinement regions in the CZTS absorber layer to achieve an improved absorption and appropriate antireflection effects. Moreover, the ultra-thin metal at the CZTS/Mo interface can be helpful for reducing the series resistance, where it behaves like a blocking layer for the Sulfur diffusion. We further combine the proposed designs with Particle Swarm Optimization (PSO)-based approach to achieve broadband absorption and boost the conversion efficiency. It is found that the optimized design with Ti sub-layer improves the CZTS solar cell properties, where it yields 31\% improvement in short-circuit current and 60\% in the power efficiency over the conventional one. Therefore, the optimized designs provide the opportunity for bridging the gap between improving the optical behavior and reducing the recombination losses.},
	url = {https://iopscience.iop.org/article/10.1088/2053-1591/aab7ae/meta},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4049,
	title = {Role of Graded Channel Doping Engineering in Improving Junctionless GAA MOSFET Performance for Ultra Low-Leakage Power Applications, ISSN / e-ISSN 1555-130X / 1555-1318},
	journal = { Journal of Nanoelectronics and Optoelectronics},
	volume = {Volume 13},
	number = {N{\textdegree} 4},
	year = {2018},
	pages = {pp 521-530},
	abstract = {In this paper, channel doping engineering aspect is proposed as a new way to improve the junctionless Gate All Around (GAA) MOSFET performance for digital and analog applications. The amended channel doping consists of a lateral graded profile, where the channel is divided into two regions with different doping levels. Analytical approaches for the drain current, leakage power, digital and small signal parameters are developed incorporating the impact of graded channel doping (GCD) paradigm on the device electrical behavior. Exhaustive study based on a performance comparison between the proposed structure and the conventional one is carried out, where the proposed design exhibits a good capability in improving the overall device figures-of-merit (FoMs), governing the leakage and the analog performance. More importantly, Particle Swarm Optimization (PSO) approach is proposed as a metaheuristic technique to boost the device performance through carefully adjusting the design parameters of the proposed GCD feature. It is found that the optimized design outperforms considerably the conventional counterpart and enable making wise trade-offs, where an enhancement of 300\% in the I ON /I OFF ratio, 482\% in the intrinsic gain, and 340\% in the cut-off frequency has been reached. Besides, the proposed design provides a sufficient capability for suppression of the leakage effects. The obtained results underline the distinctive property of the proposed design for bridging the gap between high analog and digital performances with ultra-low power consumption. This makes the proposed design a potential alternative for ultra-low power and high electrical performance applications.},
	url = {https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000004/art00011},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4048,
	title = {Boosting the optical performance and commutation speed of phototransistor using SiGe/Si/Ge tunneling structure, ISSN / e-ISSN 2053-1591 / 2053-1591},
	journal = { Materials Research Express},
	volume = {Volume 5},
	number = { N{\textdegree} 6},
	year = {2018},
	pages = {pp 065902},
	abstract = {In this paper, a new optically controlled tunneling field effect transistor (OC-TFET) based on SiGe/Si/Ge hetero-channel is proposed to improve optical commutation speed and reduce power consumption. An exhaustive study of the device switching behavior associated with different hetero-channel structures has been carried out using an accurate numerical simulation. Moreover, a new figure of Merit (FoM) parameter called optical swing factor that describes the phototransistor optical commutation speed is proposed. We demonstrate that the band-to-band tunneling effect can be beneficial for improving the device optical commutation speed. The impact of the Ge mole fraction of the SiGe source region on the device FoMs is investigated. It is found that the optimized design with 40\% of Ge content offers the opportunity to overcome the trade-off between ultrafast and very sensitive photoreceiver performance, where it yields 48 mV/dec of optical swing factor and 155 dB of I  ON /I  OFF  ratio. An overall performance comparison between the proposed OC-TFET device and the conventional designs is performed, where the proposed structure ensures high optical detectivity for very low optical powers (sub-1pW) as compared to that of the conventional counterparts. Therefore, the proposed OC-TFET provides the possibility for bridging the gap between improved optical commutation speed and reduced power consumption, which makes it a potential alternative for high-performance inter-chip data communication applications.},
	url = {https://iopscience.iop.org/article/10.1088/2053-1591/aac756/meta},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4047,
	title = {Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Vloume. 17},
	number = { Issue 2},
	year = {2018},
	pages = {pp 724-735},
	abstract = {A continuous and accurate model based on the two-dimensional (2D) potential solution of a tunnel field-effect transistor (TFET) with undoped vertical surrounding-gate (VSG) structure is proposed. Both ambipolarity and dual modulation effects are included to obtain a more accurate analytical model, whose validity is demonstrated by comparison with two-dimensional numerical simulations using ATLAS-2D. The continuity of the proposed model enables extraction of analog/radiofrequency (RF) parameters and device figures of merit. Moreover, the effect of introducing a high-κ layer on the gate oxide in improving the behavior of the VSG-TFET is explored for use in high-performance analog/RF applications. The proposed continuous analytical model can be easily implemented in commercial simulators to study and investigate VSG-TFET-based nanoelectronic circuits.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1141-9},
	author = {Abdelmalek Nidhal and Djeffal Fay{\c c}al and Bentrcia Toufik}
}
@article {4046,
	title = {The role of the Ge mole fraction in improving the performance of a nanoscale junctionless tunneling FET: concept and scaling capability, ISSN / e-ISSN 2190-4286 / 2190-4286},
	journal = {Beilstein Journals of Nanotechnology},
	volume = {Volume 9},
	year = {2018},
	pages = {pp 1856-1862},
	abstract = {In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si1-xGex/Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si1-xGex material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolar conduction is investigated. Moreover, the impact of the Ge mole fraction in the proposed Si1-xGex source region on the electrical figures of merit (FoMs) of the transistor, including the swing factor and the ION/IOFF ratio is analyzed. It is found that the optimized design with 60 atom \% of Ge offers improved switching behavior and enhanced derived current capability at the nanoscale level, with a swing factor of 42 mV/dec and an ION/IOFF ratio of 115 dB. Further, the scaling capability of the proposed Si1-xGex/Si/Ge DG-HJ-JL TFET structure is investigated and compared to that of a conventional Ge-DG-JL TFET design, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.},
	url = {https://www.beilstein-journals.org/bjnano/articles/9/177},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Bentrcia Toufik}
}
@article {4045,
	title = {Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects, Journal of Nanoelectronics and Optoelectronics, ISSN / e-ISSN 1555-130X / 1555-1318},
	journal = { Journal of Nanoelectronics and Optoelectronics},
	volume = {Volume 13},
	number = {N{\textdegree} 7 },
	year = {2018},
	pages = {pp 1106-1113},
	abstract = {In this work, we present a comprehensive investigation of JL-GAA MOSFET including degradation-related ageing effects to study the nanoscale JL-GAA MOSFET reliability against the ageing phenomenon. A quantitative analysis of the device reliability behavior is carried out, in order to show the impact of the ageing effects on the device performance for digital applications. Moreover, the effect of the stress time on the device subthreshold behavior including the threshold voltage, DIBL and swing factor is elucidated, where the degradation related-ageing effects is represented by a new current generator in the opposite direction that describes the exponential degradation of the current as function of the stress time. Further, the role of introducing a high-k layer on the gate oxide in improving the JL-GAA MOSFET immunity against the degradation-related ageing effects is analyzed, where the proposed structure exhibits an excellent immunity against the ageing effects. In order to show the impact of the proposed approach on the nanoelectronic circuits designing, the developed model has been implemented to study the performance behavior of voltage amplifier circuit including degradation-related ageing effects. Therefore, the proposed approach can offer new insights regarding the investigation and simulation of the nanoelectronic circuits including the degradation-related ageing effects.},
	url = {https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000007/art00020},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4044,
	title = {A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube, ISSN / e-ISSN 0263-2241 / 1873-412X},
	journal = {Measurement},
	volume = {Volume 125},
	year = {2018},
	pages = {pp 232-242},
	abstract = {This paper presents a new nanoforce sensor based on a suspended carbon nanotube gate field-effect transistor. To do so, a numerical investigation of Suspended Gate Silicon-on-Insulator MOSFET (SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube{\textquoteright}s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the saturation region. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on artificial neural networks (ANNs). We successfully integrate our neural model of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on neural networks, which deals with correction and linearization of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.},
	url = {https://www.sciencedirect.com/science/article/pii/S0263224118303452},
	author = {F.Menacer and Dibi Zohir and A.Kadri and Djeffal Fay{\c c}al}
}
@article {4043,
	title = {Enhanced optical and electrical performances of UV-phototransistor using graded band-gap ZnMgO photosensitive gate, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 17},
	number = { Issue 3},
	year = {2018},
	pages = {pp 1181{\textendash}1190},
	abstract = {In this work, a new ultraviolet optically-controlled field-effect transistor (UV-OCFET) based on ZnMgO photosensitive gate with graded band-gap aspect is proposed and investigated using a comprehensive analytical modeling. The impact of different band-gap profiles on the phototransistor figure of merits (FoMs) is analyzed. Our study demonstrates that the use of ZnMgO with a graded band-gap profile can generate an electric field in the photosensitive layer, which leads to achieve the dual role of effective electron/hole pair separation and lower recombination losses. Moreover, increasing the Mg content progressively not only enables a strong UV-light absorption but also allows achieving a high optical sensitivity for very low optical powers (sub-1pW). The particle-swarm optimization approach is exploited to boost the phototransistor FoMs by optimizing the sensor design parameters and the ZnMgO band-gap profile. It is found that the optimized structure exhibits superior optical characteristics as compared to those of the conventional UV-photodetectors. Therefore, the optimized ZnMgO UV-OCFET with graded band-gap paradigm pinpoints a new path toward recording an ultrasensitive phototransistor compatible with CMOS modern technology. This makes it a potential alternative for high-performance and low-energy consumption chip-level UV-communication and monitoring applications.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1211-z},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4040,
	title = {Role of ITO ultra-thin layer in improving electrical performance and thermal reliability of Au/ITO/Si/Au structure: An experimental investigation, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {120},
	year = {2018},
	pages = {419-426 },
	abstract = {
	In this paper, the role of introducing an intermediate Indium Tin Oxide (ITO) thin-film in improving the Au/Si Schottky Barrier Diodes (SBDs) electrical performance is experimentally analyzed. The Au/ITO/Si/Au structures with different ITO thicknesses were fabricated using RF magnetron sputtering technique. The current-voltage (I-V) characteristics of the investigated structures are analyzed, where the device electrical parameters are extracted. It is found that the introduced ITO thin-film has a significant impact in reducing the ideality factor (n=1.25), the interfacial defects (Nss=1.5{\texttimes}1012 eV-1cm-2) and the series resistance (Rs=32Ω). Our study demonstrates that the use of ITO intermediate thin-film can generate minority carrier injection effects, which lead to achieve the dual role of enhanced derived current and lower series resistance. Moreover, the structure thermal stability behavior is investigated and compared with those of the conventional design in order to reveal the device reliability against the thermal variation. Furthermore, the effect of the annealing on the device thermal stability is also analyzed. Our investigation shows that the annealed structure provides the possibility for avoiding the degradation related-heating effects. Therefore, the proposed Au/ITO/Si/Au structure offers the opportunity for bridging the gap between achieving superior electrical performance and enhanced thermal stability. The obtained results may facilitate the design of high-performance SBDs for sensing and microelectronic applications.

},
	url = {https://www.researchgate.net/publication/325553017_Role_of_ITO_ultra-thin_layer_in_improving_electrical_performance_and_thermal_reliability_of_AuITOSiAu_structure_An_experimental_investigation},
	author = {Benhaya, Abdelhamid and Fay{\c c}al Djeffal and Kalinka Kacha and Hichem Ferhati and Bendjerad, Adel}
}
@article {4034,
	title = {Fuzzy Logic Controller using the Nonholonomic Constraints for Quadrotor Trajectory Tracking, e-ISSN  2600-7029},
	journal = {Revue des sciences et sciences de l{\textquoteright}ing{\'e}nieur},
	volume = {Volume 6},
	number = {N{\textdegree} 2},
	year = {2018},
	pages = {pp 51-59 },
	author = {Medjghou Ali and Slimane Noureddine and Chafaa Kheireddine}
}
@article {4033,
	title = {Disturbances Elimination with Fuzzy Sliding Mode Control for Mobile Robot Trajectory Tracking, ISSN / e-ISSN 1336-1376 / 1804-3119},
	journal = {Advances in Electrical and Electronic Engineering},
	volume = {Volume 16},
	number = {N{\textdegree} 3},
	year = {2018},
	pages = {pp 297-310},
	abstract = {The disturbances are the significant issue for the trajectory tracking of mobile robots. Therefore, an adequate control law is presented in this paper and this one is based on Global Terminal Sliding Mode (GTSM) with fuzzy control. This control law aims to guarantee the avoidance of the kinematic disturbances which are injected in the angular and linear velocities, respectively. Moreover, the dynamic model based on exponential reaching law is presented to avoid the uncertainties. The control law provides the asymptotic stability by taking into account the fuzzy rules and Lyapunov theory. Thus, the chattering phenomenon should be avoided. The simulation works prove the robustness of the proposed control law by considering the disturbances function and the robot can follow the desired trajectories.},
	url = {https://www.researchgate.net/publication/327850791_Disturbances_Elimination_with_Fuzzy_Sliding_Mode_Control_for_Mobile_Robot_Trajectory_Tracking},
	author = {Benaziza Walid and Slimane Noureddine and Mallem Ali}
}
@article {4032,
	title = {PD Terminal Sliding Mode Control Using Fuzzy Genetic Algorithm for Mobile Robot in Presence of Disturbances, ISSN / e-ISSN 1897-8649 / 2080-2145},
	journal = {Journal of automation, Mobile robotics \&intelligent systems},
	volume = {Volume 12},
	number = {N{\textdegree}2},
	year = {2018},
	pages = {pp 52-60 },
	abstract = {This paper presents a new approach in the field of trajectory tracking for nonholonomic mobile robot in presence of disturbances. The proposed control design is constructed by a kinematic controller, based on PD sliding surface using fuzzy sliding mode for the angular and linear velocities disturbances, in order to tend asymptotically the robot posture error to zero. Thereafter a dynamic controller is presented using as a sliding surface design, a fast terminal function (FTF) whose parameters are generated by a genetic algorithm in order to converge the velocity errors to zero in finite time and guarantee the asymptotic stability of the system using a Lyapunov candidate. The elaborated simulation works in the case of different trajectories confirm the robustness of the proposed approach.},
	url = {https://www.researchgate.net/publication/326800887_PD_terminal_sliding_mode_control_using_fuzzy_genetic_algorithm_for_mobile_robot_in_presence_of_disturbances},
	author = {Benaziza Walid and Slimane Noureddine and Ali Mallem}
}
@article {4031,
	title = {Fuzzy sliding mode control based on backstepping synthesis for unmanned quadrotors, ISSN / e-ISSN 1336-1376 / 1804-3119},
	journal = {Advances in Electrical and Electronic Engineering},
	volume = {volume 16},
	number = {issue 2},
	year = {2018},
	pages = {pp 135-146},
	abstract = {The main purpose of this paper is to integrate fuzzy logic technique and backstepping synthesis to sliding mode control to develop a Fuzzy Backstepping-Sliding Mode Controller (FBSMC) to resolve the problem of altitude and attitude tracking control of unmanned quadrotor systems under large external disturbances. First, a backstepping-sliding mode control for quadrotor is introduced. Moreover, a fuzzy logic system is employed to adapt the unknown switching gains to eliminate the chattering phenomenon induced by switching control on the conventional Backstepping-Sliding Mode Controller (BSMC). The dynamical motion equations are obtained by Euler-Newton formalism. The stability of the system is guaranteed in the sense of the Lyapunov stability theorem. Simulation results are carried out using Matlab/Simulink environment to illustrate the effectiveness and robustness of the proposed controller.},
	url = {http://advances.utc.sk/index.php/AEEE/article/view/2231},
	author = {Medjghou Ali and Slimane Noureddine and Chafaa Kheireddine}
}
@article {4029,
	title = {Robust control of mobile robot in presence of disturbances using neural network and global fast sliding mode, ISSN / e-ISSN 1064-1246 / 1875-8967},
	journal = {Journal of Intelligent And Fuzzy Systems},
	volume = {Volume 34},
	number = {N{\textdegree} 6},
	year = {2018},
	pages = {pp 4345-4354},
	abstract = {In this paper a dynamic tracking control of mobile robot using neural network global fast sliding mode (NN-GFSM) is presented. The proposed strategy combines two control approaches, kinematic control and dynamic control. The laws of kinematic control are based on GFSM in order to determine the adequate velocities for the system stability in finite time. The dynamic controller combines two control techniques, the GFSM to stabilize the velocities errors, and a neural network controller in order to approximate a nonlinear function and to deal the disturbances. This dynamic controller allows the robots to follow the desired trajectory even in the presence of disturbances. The designed controller is dynamically simulated by using Matlab/ Simulink and the simulations results show the efficiency and robustness of the proposed control strategy. },
	url = {https://content.iospress.com/articles/journal-of-intelligent-and-fuzzy-systems/ifs17864},
	author = {Mallem Ali and Slimane Noureddine and Benaziza Walid}
}
@article {4022,
	title = {Parametric Study of Stacked Microstrip Patch Antenna with Dissimilar Substrates, ISSN / e-ISSN 2077-6772 / 2306-4277},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {volume 10},
	number = {N{\textdegree}4},
	year = {2018},
	pages = {pp  04004-1-04004-4},
	abstract = {A complete parametric study of stacked rectangular microstrip patches printed on non-magnetic isotropic substrate is performed. The numerical results are obtained by applying the method of moments to the electric field integral equations. Detailed closed-form expressions of Green{\textquoteright}s functions are presented. The new results found indicate that, the lower resonant frequency is mainly determined by the patch etched on the thicker layer. The layer having the higher permittivity defines which resonance is mainly determined by the bottom patch, either the upper resonance if the upper layer has the higher permittivity, or the lower resonance in opposite case. All these results offer better understanding and thus a better control of the dual-band operating of the microstrip antenna. Therefore, a proper choice of the antenna parameters becomes possible in order to obtain the desired functional characteristics.},
	url = {https://www.researchgate.net/publication/327284531_Parametric_Study_of_Stacked_Microstrip_Patch_Antenna_with_Dissimilar_Substrates},
	author = {Bouttout Sarah and BentrciaYoussouf and Benkouda Siham and Fortaki Tarek}
}
@article {4014,
	title = {Analysis of HTS circular patch antennas including radome effects. International Journal of Microwave and Wireless Technologies},
	journal = {International Journal of Microwave and Wireless Technologies},
	volume = {10},
	number = {7},
	year = {2018},
	pages = {843-850},
	abstract = {
	
		
			
				
					In this paper, the resonant frequencies, quality factors and bandwidths of high Tc superconducting circular microstrip patches in the presence of a dielectric superstrate loading have been studied using Galerkin testing procedure in the Hankel transform domain. The exact Green{\textquoteright}s function of the grounded dielectric slab is used to derive an electric field integral equation for the unknown current distribution on the circular disc. Thus, surface waves, as well as space wave radiation, are included in the formulation. London{\textquoteright}s equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. Galerkin testing is used in the resolution of the electric field integral equation. Two solutions using two different basis sets to expand the unknown disk currents are developed. The first set of basis functions used is the complete set of transverse magnetic and transverse electric modes of a cylindrical cavity with magnetic side walls. The second set of basis functions used employ Chebyshev polynomials and enforce the current edge condition. The computed values for a wide range of variations of superstrate thickness and dielectric constant are compared with different theoretical and experimental values available in the open literature, showing close agreement. Results are showing that the superstrate parameters should always be kept into account in the design stage of the superconducting microstrip resonators.
				
			
		
	



	\&nbsp;

},
	url = {https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/analysis-of-hts-circular-patch-antennas-including-radome-effects/BA2F048969B099808D2FDBAC4487CC8A$\#$},
	author = {Bedra, Sami and Bedra , Randa and Benkouda , Siham and Fortaki , Tarek}
}
@article {4008,
	title = {Spectral domain analysis of rectangular stacked patches printed on a substrate characterized by dielectric and magnetic anisotropy, e-ISSN 1572-8137},
	journal = {Journal of Computational Electronics },
	volume = {Volume 17 },
	number = {N{\textdegree}1},
	year = {2018},
	pages = {pp 399{\textendash}405},
	abstract = {Spectral domain formulation is provided for the analysis of rectangular stacked patches printed on a substrate characterized by dielectric and magnetic uniaxial anisotropy. Detailed analytical expressions of the dyadic Green{\textquoteright}s functions are derived. Galerkin{\textquoteright}s procedure is applied to solve the electric field integral equations, and the resonance characteristics are determined by solving the characteristic equation. Numerical results show that the influence of the magnetic anisotropy on the resonant frequencies is highly dependent on the permeability of the medium, where for a non-magnetic medium, the impact of the existing anisotropy was found negligible. However, for a magnetic medium, the anisotropy has a large impact on the resonant frequencies. Moreover, the influence of each of the components of the permeability tensor has been also reported.},
	url = {https://link.springer.com/article/10.1007/s10825-017-1048-x},
	author = {BentrciaYoussouf and Bouttout Sarah and Benkouda Siham and Fortaki Tarek}
}
@article {3992,
	title = {A comparative study for two LiNbO3 cuts (Y-Z and Y-X) in detecting bulk acoustic microwaves using Probabilistic Neural Network},
	journal = {Engineering Science and Technology, an International Journal},
	volume = {21},
	number = {3},
	year = {2018},
	pages = {527-531},
	abstract = {
	This work is mainly on the detection of the bulk acoustic waves (BAWs), where we have compared two Lithium Niobate cuts (Y-Z and Y-X), during the propagation of the acoustic microwaves in the piezoelectric LiNbO3-substrate. In this paper, we have used the classification by Probabilistic Neural Network (PNN) as a tool for numerical analysis in which we classify all the values of the real and imaginary parts of the attenuation coefficient for the propagation velocity. This analysis can allow us to demonstrate the best possibility in utilization for the BAW generation. This study will be very interesting in modeling and realization of acoustic wave devices (ultrasound) based on the propagation of acoustic microwaves.

},
	url = {https://www.researchgate.net/publication/324125585_A_comparative_study_for_two_LiNbO3_cuts_Y-Z_and_Y-X_in_detecting_bulk_acoustic_microwaves_using_Probabilistic_Neural_Network},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@article {3983,
	title = {PSpice implementation and simulation of a new electro-thermal modeling for estimating the junction temperature of low voltage power MOSFET, ISSN / e-ISSN 2077-6772 / 2306-4277},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {Vol.10},
	number = {N{\textdegree}6},
	year = {2018},
	pages = {pp 06004-06009},
	abstract = {The estimation of the junction temperature (Tj) is very important factor for improving the reliability and efficiency of the power electronic converters. A new electro-thermal (ET) model of low voltage power MOSFET is described in this paper. The electro-thermal model allows fast estimation of the junction temperature, based on the transient thermal impedances (Zth) using the (RC) Foster thermal network model and total power losses. The parameters of the (RC) Foster thermal network model are extracted from the data provided by the manufacturer{\textquoteright}s datasheet using particle swarm optimization (PSO) method. Moreover, a dc/dc Buck converter is also analyzed by simulation to evaluate the electro-thermal model. The simulation results indicate a good agreement between the proposed model and manufacturer{\textquoteright}s data. Finally, the electro-thermal (ET) model simulation using this (RC) Foster thermal network model shows a reasonable accuracy for estimating the junction temperature in a Dc/Dc buck converter.},
	url = {https://jnep.sumdu.edu.ua/download/numbers/2018/6/articles/jnep_06004.pdf},
	author = {Smail Toufik and Dibi Zohir and Douadi Bendib}
}
@article {3980,
	title = {RF/analog performances enhancement of short channel GAAJ MOSFET using source/drain extensions and metaheuristic optimization-based approach, ISSN / e-ISSN 2180-1843 / 2289-8131},
	journal = {Journal of Telecommunication, Electronic and Computer Engineering },
	volume = {volume 10},
	number = {N{\textdegree}2},
	year = {2018},
	abstract = {This paper presents a hybrid strategy combining compact analytical models of short channel Gate-All-Around Junctionless (GAAJ) MOSFET and metaheuristic-based approach for parameters optimization. The proposed GAAJ MOSFET design includes highly extension regions doping. The aim is to investigate the impact of this design on the RF and analog performances systematically and to show the immunity behavior against the short channel effects (SCEs) degradation. In this context, an analytical model via the meticulous solution of 2D Poisson equation, incorporating source/drain (S/D) extensions effect, has been developed and verified by comparing it with TCAD simulation results. A comparative evaluation between the proposed GAAJ MOSFET structure and the classical device in terms of RF/Analog performances is also investigated. The proposed design provides RF/Analog performances improvement. Furthermore, based on the presented analytical models, Genetic Algorithms (GA) optimization approach is used to optimize the design of S/D parameters. The optimized structure exhibits better performances, i.e., cut-off frequency and drive current are improved. Besides, it shows superior immunity behavior against the RF/Analog degradation due to the unwanted SCEs. The insights offered by the proposed paradigm will help to enlighten designer in future challenges facing the GAAJ MOSFET technology for high RF/analog applications.},
	url = {https://journal.utem.edu.my/index.php/jtec/article/view/3352},
	author = {Yousfi Abderrahim and Dibi Zohir and Aissi  Salim and Bencherif Hichem and Saidi Lamir}
}
@article {3974,
	title = {Design of a Selective Smart Gas Sensor Based on ANN-FL Hybrid Modeling},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {10},
	number = {6},
	year = {2018},
	pages = {06011-06016},
	abstract = {The selectivity is one of the main challenges to develop a gas sensor, the good chemical species detection in a gaseous mixture decreasing the missed detections. The present paper proposes a new solution for gas sensor selectivity based on artificial neural networks (ANNs) and fuzzy logic (FL) algorithm. We first use ANNs to develop a gas sensor model in order to accurately express its behavior. In a second step, the FL and Matlab environment are used to create a database for a selective model, where the response of this one only depends on one chemical species. Analytical models for the gas sensor and its selective model are implemented into a Performance Simulation Program with Integrated Circuit Emphasis (PSPICE) simulator as an electrical circuit in order to prove the similarity of the analytical model output with that of the MQ-9 gas sensor where the output of the selective model only depends on one gas. Our results indicate the capability of the ANN-FL hybrid modeling for an accurate sensing analysis.},
	url = {https://jnep.sumdu.edu.ua/download/numbers/2018/6/articles/jnep_06011.pdf},
	author = {S. Kouda and Dendouga Abdelghani and S. Barra and Bendib Toufik}
}
@article {3973,
	title = {Parameter Extraction of Schottky Solar Cell in Wide Temperature Range UsingGenetic Algorithms, ISSN / e-ISSN 2077-6772 / 2306-4277},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {volume 10},
	number = { issue 6},
	year = {2018},
	pages = {pp 06046-1 - 06046-4},
	abstract = {This paper proposes a new method based on a genetic algorithm (GA) approach to optimize the electrical parameters such as height barrier, ideality factor, fill factor, open-circuit voltage and power conversion efficiency, in order to improve the electrical performance of Schottky solar cells in an over wide range of temperature. Thus the parameters research process called objective function is used to find the optimal electrical parameters providing greater conversion efficiency. The proposed model results are also compared to experimental and analytical I-V data, where a good agreement has been found between them. Therefore, this approach may provide a theoretical basis and physical insights for Schottky solar cells.},
	url = {https://www.researchgate.net/publication/329836321_Parameter_Extraction_of_Schottky_Solar_Cell_in_Wide_Temperature_Range_Using_Genetic_Algorithms},
	author = {Lakehal Brahim and Dendouga Abdelghani}
}
@article {3968,
	title = {PCA-based selection of distinctive stability criteria and classification of post-stroke pathological postural behaviour, ISSN / e-ISSN 0158-9938 / 1879-5447},
	journal = {Australasian Physical \& Engineering Sciences in Medicine},
	volume = {Volume 41},
	number = { Issue 1},
	year = {2018},
	pages = { pp 189{\textendash}199},
	abstract = {In this paper, we study the postural behaviour of two categories of people: Post-CVA subjects suffering from cerebrovascular accident syndromes and healthy individuals under several levels of anterior{\textendash}posterior and medial{\textendash}lateral sinusoidal disturbances (0.1{\textendash}0.5 Hz). These perturbations were produced from an omnidirectional platform called Isiskate. Afterwards, we have quantified seventy postural parameters, they were combined of linear stabilometric parameters and non-linear time dependent stochastic parameters using stabilogram diffusion analysis and some spectral attributes using power spectral density. The aim of our analysis is to reduce data dimensionality using principal component analysis (PCA). Furthermore, we proposed a new PCA-related criterion named: criterion of contribution in order to evaluate the contribution of every variable in the resulted system structure, and thus to eliminate the redundant postural characteristics. Afterwards, we highlighted some interesting distinctive parameters. The selected parameters were used thereafter in comparison between the studied groups. Finally, we created a classification model using support vector machines to distinguish stroke patients. Our proposed techniques help in understanding the human postural dynamics and facilitate the diagnosis of pathologies related to equilibrium which can be used to improve the rehabilitation services.},
	url = {https://link.springer.com/article/10.1007/s13246-018-0628-9},
	author = {Hedjazi Naceur and Kharboutly Haissam and Benali Abderraouf and Dibi Zohir}
}
@article {3967,
	title = {Model identification and evaluation of postural dynamics of healthy and post-stroke individuals under unidirectional perturbations, ISSN / e-ISSN 1746-8094 / 1746-8108},
	journal = {Biomedical Signal Processing and Control},
	volume = {Volume 43},
	year = {2018},
	pages = {pp 75-85},
	abstract = {In this paper, different techniques of analysis have been used to study the effects of perturbations generated from a\&nbsp;robotic\&nbsp;mobile platform called Isiskate. These disturbances were applied on two categories of people: post-CVA subjects suffering from cerebrovascular accident and healthy individuals. Our aim is to analyze some assessment tools to distinguish between different postural behaviors. In relevant works, very few studies have addressed the use of nonlinear time-series methods in diagnosis of post-CVA pathological postural behavior. Furthermore, our tools are based on parametric and non-parametric identification procedures, that can yield to an insight on how to improve the examination time. As part of our analysis, the tests were established with several levels of\&nbsp;sinusoidal vibrations, along the anterior{\textendash}posterior (A/P) and medial{\textendash}lateral (M/L) planes. The mobile platform allowed us to record a set of coordinates that includes center of pressure (COP) as a function of time. First, we have quantified some\&nbsp;linear parameters\&nbsp;and\&nbsp;spectral characteristics\&nbsp;using\&nbsp;power spectral density\&nbsp;(PSD). Thereafter, we have deduced\&nbsp;stochastic parameters\&nbsp;using stabilogram diffusion analysis (SDA), which revealed some interesting invariants. Then transfer functions between the platform velocity and COP trajectory were evaluated. They were carried out at frequencies from 0.1 Hz to 3.3 Hz. Furthermore, we accomplished a comparison of models based on both parametric and nonparametric identification methods. The combination of the proposed techniques has provided us an understanding of human control process by establishing a behavior model and helped us to distinguish patients with postural disorders. This improves postural analysis and facilitates the diagnosis of pathologies related to equilibrium which serves in rehabilitation.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1746809418300466},
	author = {Hedjazi Naceur and Benali Abderraouf and Bouzit Mourad and Dibi Zohir}
}
@article {3964,
	title = {A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube ISSN / e-ISSN 0263-2241 / 1873- 412X},
	journal = {Measurement},
	volume = {Volume 125},
	year = {2018},
	pages = { Pages 232-242},
	abstract = {This paper presents a new nanoforce sensor based on a suspended carbon\&nbsp;nanotube\&nbsp;gate\&nbsp;field-effect transistor. To do so, a numerical investigation of Suspended Gate\&nbsp;Silicon-on-Insulator\&nbsp;MOSFET\&nbsp;(SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube{\textquoteright}s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the\&nbsp;saturation region. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on\&nbsp;artificial neural networks\&nbsp;(ANNs). We successfully integrate our\&nbsp;neural model\&nbsp;of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on\&nbsp;neural networks, which deals with correction and\&nbsp;linearization\&nbsp;of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.},
	url = {https://www.sciencedirect.com/science/article/pii/S0263224118303452},
	author = {F.Menacer and Dibi Zohir and A.Kadri and Djeffal Fay{\c c}al}
}
@article {3961,
	title = {Impact of triple-material gate and highly doped source/drain extensions on sensitivity of DNA biosensors },
	journal = {Journal of Computational Electronics},
	volume = {Volume 17},
	number = { Issue 4},
	year = {2018},
	pages = {pp 1797{\textendash}1806},
	abstract = {Gate engineering and highly doped source/drain region have been investigated to design a new DNA sensor for use in biomedical applications based on a double gate (DG) dielectric modulated (DM) junctionless (JL) metal oxide semiconductor field effect transistor (MOSFET) with triple material (TM) gate. Based on the dielectric modulation effect, DNA molecules in the nanogap cavity change due to the charge density of biomolecules, producing a change in the threshold voltage of the device. Analytical and numerical analysis was carried out to reveal the impact of physical parameters on the sensitivity of the proposed biosensor. Various characteristics, such as the surface potential, threshold voltage, and drain current were also investigated. The effectiveness of the proposed TM-DG-DM-JL-MOSFET structure with highly doped source/drain extensions is confirmed by comparison of the results with those for a conventional single-materiel (SM) gate DM-JL-MOSFET, revealing a good improvement in sensitivity and making the proposed structure an attractive solution for use in DNA-based sensor applications.},
	url = {https://link.springer.com/article/10.1007/s10825-018-1228-3},
	author = {M. Ouarghi and Dibi Zohir and N. Hedjazi}
}
@article {3959,
	title = {Performance analysis of a new graphene based-phototransistor for ultra-sensitive infrared sensing applications, ISSN 0030-4026},
	journal = {Optik},
	volume = {176},
	year = {2018},
	pages = {24-31},
	abstract = {
	In this paper, a new Graphene nanoribbon (GNR) based\&nbsp;Ge-phototransistor is proposed and investigated numerically by self-consistently solving the Schr{\"o}dinger equation and\&nbsp;Poisson equation\&nbsp;using\&nbsp;non-equilibrium\&nbsp;Green{\textquoteright}s function\&nbsp;(NEGF) formalism. An overall performance metrics comparison between both the conventional\&nbsp;Si-based\&nbsp;phototransistor\&nbsp;and the proposed design is performed. It is found that the proposed\&nbsp;GNR Ge-phototransistor provides better electrical and optical performances compared to the conventional counterpart. Moreover, using\&nbsp;GNR\&nbsp;material as a channel can improve the device performance not only enables a high\&nbsp;Ion/Ioff\&nbsp;ratio, but also allows achieving a superior sensitivity for ultra-low\&nbsp;optical powers. It is also revealed that the\&nbsp;responsivity\&nbsp;of the investigated design can be increased by reducing the\&nbsp;GNR\&nbsp;channel length. This underlines the outstanding capability of the proposed design for bridging the gap between modern\&nbsp;nanoelectronic\&nbsp;and\&nbsp;nanophotonic\&nbsp;technologies. In addition, the proposed\&nbsp;GNR-based\&nbsp;Ge-phototransistor can achieve an acceptable detectivity for very weak optical power intensities, in the order of some\&nbsp;Femto-Watts, which leads to reduce the total\&nbsp;power consumption\&nbsp;associated with\&nbsp;optical links. Therefore, the proposed\&nbsp;GNR\&nbsp;phototransistor pinpoints a new path toward achieving an ultrasensitive photoreceiver with\&nbsp;low power consumption, which makes it potential alternative for chip-level Infrared communication and nano-optoelectronic applications.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402618313494},
	author = {Kadri, A and Fay{\c c}al Djeffal and Hichem Ferhati and Menacer, Farid and Zohir Dibi}
}
@mastersthesis {5355,
	title = {Contribution {\`a} l\&$\#$39;{\'e}tude des propri{\'e}t{\'e}s des films minces de ZnO},
	year = {2017},
	author = {Boukhenoufa Noureddine}
}
@mastersthesis {5352,
	title = {Etude et r{\'e}alisation d\&rsquo;un onduleur monophas{\'e} multiniveaux {\`a} commande num{\'e}rique},
	year = {2017},
	author = {Oussmani, salah eddine}
}
@mastersthesis {5351,
	title = {Etude de l\&rsquo;effet des convertisseurs statiques sur le r{\'e}seau {\'e}lectrique},
	year = {2017},
	author = {Ferfari, Fouad}
}
@mastersthesis {5347,
	title = {R{\'e}alisation d\&rsquo;un syst{\`e}me {\'e}lectromagn{\'e}tique d\&rsquo;un tri de d{\'e}chet},
	year = {2017},
	author = {Kermadi Mounir}
}
@mastersthesis {5338,
	title = {Caract{\'e}risation d\&$\#$39;un TMOS par la technique CV sous Silvaco},
	year = {2017},
	author = {Gas Hani}
}
@mastersthesis {5337,
	title = {Etude et simulation de l\&$\#$39;effet de la couche tampon sur les performances des cellules solaires {\`a} base de CIGS},
	year = {2017},
	author = {Benhamida Loubna}
}
@mastersthesis {5336,
	title = {Mise {\`a} niveau d\&$\#$39;un banc optique de mesure de la r{\'e}ponse spectrale},
	year = {2017},
	author = {Saidi Abdelali and Saidi Mohamed}
}
@mastersthesis {5335,
	title = {Analyse et simulation des performances des cellules solaires en couches minces {\`a} base de CZTS},
	year = {2017},
	author = {Bouchama Besma}
}
@mastersthesis {5334,
	title = {Caract{\'e}risation structurale et comortement magn{\'e}tique des multicouches FM/AFM en fonction de la temp{\'e}rature},
	year = {2017},
	author = {Smaili Fatiha}
}
@mastersthesis {5332,
	title = {Etude et r{\'e}alisation d\&$\#$39;une photopile {\`a} base d\&$\#$39;une structure MIS},
	year = {2017},
	author = {Drid Chaima}
}
@mastersthesis {5323,
	title = {Gestion d\&$\#$39;eau dans une habitation},
	year = {2017},
	author = {Djouima Houssena}
}
@mastersthesis {5322,
	title = {Mod{\'e}lisation des effets non-lin{\'e}aires  dans les structures pi{\'e}zo{\'e}lectriques},
	year = {2017},
	author = {Chaabane Soumali}
}
@mastersthesis {5321,
	title = {Estimation  des Filtres de Restauration des Signaux en Communications Num{\'e}riques  },
	year = {2017},
	author = {Zerdoumi  Zohra}
}
@mastersthesis {5319,
	title = {Application de nouvelles m{\'e}thodes de mod{\'e}lisation et d\&rsquo;optimisation dans l\&rsquo;{\'e}tude des antennes microbandes et des syst{\`e}mes multi-antennaires pour techniques de diversit{\'e} et MIMO},
	year = {2017},
	author = {Hamdiken Nazih}
}
@mastersthesis {5318,
	title = {Etude d\&rsquo;un syst{\`e}me multi-antennaires pour les communications mobiles},
	year = {2017},
	author = {Addaci Rafik}
}
@mastersthesis {5310,
	title = {Mod{\'e}lisation des antennes microbandes rectangulaires par le mod{\`e}le de cavit{\'e} et les r{\'e}seaux de neurones artificiels},
	year = {2017},
	author = {Bouzid Riadh}
}
@mastersthesis {5308,
	title = {et r{\'e}alisation d\&rsquo;un syst{\`e}me de transmission {\`a} base de fibre optique},
	year = {2017},
	author = {Nya Turkia and Abed Basema}
}
@mastersthesis {5305,
	title = {{\'E}tude et R{\'e}alisation d\&rsquo;un Syst{\`e}me de Transmission Radio- Fr{\'e}quence},
	year = {2017},
	author = {KROUCHI, Mohamed and HOCINE, Mohamed-Ilyes}
}
@mastersthesis {5304,
	title = {Conception et caract{\'e}risation d\&$\#$39;antenne imprim{\'e}e ULB},
	year = {2017},
	author = {Ouniss Hanine}
}
@mastersthesis {5294,
	title = {Mod{\'e}lisation et Optimisation de l\&rsquo;Effet de l\&rsquo;Auto-Echauffement des Composants Electroniques de Puissance},
	year = {2017},
	author = {MESSAADI Lotfi}
}
@mastersthesis {5293,
	title = {Mod{\'e}lisation d\&$\#$39;un Capteur Electromagn{\'e}tique.},
	year = {2017},
	author = {Meddour Fay{\c c}al}
}
@mastersthesis {5276,
	title = {Conception et r{\'e}alisation d\&$\#$39;un onduleur pour {\'e}nergie solaire},
	year = {2017},
	author = {Benammar Farouk}
}
@mastersthesis {5274,
	title = {Conception d\&$\#$39;un modulateur sigma delta temps continu en technologie CMOS},
	year = {2017},
	author = {Zerrad Hana}
}
@mastersthesis {5273,
	title = {Conception et layout d\&$\#$39;un convertisseur DC/DC},
	year = {2017},
	author = {Deghdagh Rabie}
}
@proceedings {4661,
	title = {Etude, mod{\'e}lisation et simulation des propri{\'e}t{\'e}s magn{\'e}tiques par le mod{\`e}le Jiles-Atherton d\&rsquo;une couche ferromagn{\'e}tique d{\'e}pos{\'e}e par pulv{\'e}risation cathodique magn{\'e}tron RF},
	journal = {NUMELEC 2017},
	year = {2017},
	url = {https://docplayer.fr/57389396-9th-european-conference-on-numerical-methods-in-electromagnetics-numelec-2017.html},
	author = {Bendjerad Adel}
}
@proceedings {4656,
	title = {Boron and Phosphorus Diffusion in MOS Transistors: Simulation and analyze in both 2D and 3D},
	journal = {International Conference on Phosphorus, Boron and Silicon 2017},
	year = {2017},
	url = {http://premc.org/doc/PBSI2017/PBSI2017_Book_Of_Abstracts.pdf},
	author = {Naima Guenifi}
}
@proceedings {4655,
	title = {Characterizing Slow state Near Si-SiO2 in MOS structure},
	journal = {International Conference on Phosphorus, Boron and Silicon 2017},
	year = {2017},
	url = {http://premc.org/doc/PBSI2017/PBSI2017_Book_Of_Abstracts.pdf},
	author = {Naima Guenifi}
}
@proceedings {4654,
	title = {An algorithm For Boron diffusion in MOS transistor Using SILVACO ATHENA and Matlab},
	journal = {International Conference on Phosphorus, Boron and Silicon 2017},
	year = {2017},
	url = {http://premc.org/doc/PBSI2017/PBSI2017_Book_Of_Abstracts.pdf},
	author = {Naima Guenifi}
}
@proceedings {4650,
	title = {Enhanced Performance of ZnO/c-Si Solar cell Using InterfaceEngineering with Grooves Morphology},
	journal = {6th International Conference on Systems and Control},
	year = {2017},
	url = {DOI: 10.1109/ICoSC.2017.7958747},
	author = {Ferhati Hichem}
}
@proceedings {4648,
	title = {Modeling and investigation of smart capacitive pressure sensor using artificial neural networks},
	journal = {6th International Conference on Systems and Control},
	year = {2017},
	url = {https://ieeexplore.ieee.org/document/7958746},
	author = {F, Menacer}
}
@proceedings {4646,
	title = {Cellules photovolta{\"\i}ques : De la couche active au panneau solaire photovolta{\"\i}que},
	journal = {Journ{\'e}es portes ouvertes sur la Facult{\'e} des Sciences Exactes (JFSE 2017)},
	year = {2017},
	url = {http://ceur-ws.org/Vol-1849/paper1.pdf},
	author = {Benhaya Abdelhamid}
}
@proceedings {4641,
	title = {Thermal stability investigation of power GaN HEMT includingself-heating effects},
	journal = {6th International Conference on Systems and Control,},
	year = {2017},
	address = {Batna, Alg{\'e}rie},
	url = {https://ieeexplore.ieee.org/document/7958745},
	author = {Aouf, Anouaressadate and Fay{\c c}al Djeffal and Fouzi Douak}
}
@proceedings {4636,
	title = {Mobile robot trajectory tracking using terminal sliding  mode control},
	journal = {6th IEEE International conference on  Systems and Control (ICSC{\textquoteright}2017)},
	year = {2017},
	author = {Benaziza Walid}
}
@proceedings {4634,
	title = {Trajectory Tracking and VFH Obstacle Avoidance for Differential Drive Mobile Robot},
	journal = {International Conference on Automatic control, Telecommunications and Signals (ICATS{\textquoteright}17)},
	year = {2017},
	author = {S.E. Ghamri}
}
@conference {4630,
	title = {Using Probabilistic Neural Network (PNN) For Extracting Acoustic Microwaves (BAW) In Piezoelectric Material},
	booktitle = {International Conference on Artificial Intelligence in Renewable Energetic Systems- 22-24 October 2017, Tipaza- ALGERIA},
	year = {2017},
	abstract = {
	I



	n this paper, we propose a new method for Bulk waves detection of an acoustic microwave signal during the propagation of acoustic microwaves in a piezoelectric substrate (Lithium Niobate LiNbO3). We have used the classification by probabilistic neural network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient attenuation with the acoustic velocity in order to build a model from which we note the Bulk waves easily. These singularities inform us of presence of Bulk waves in piezoelectric materials.



	By which we obtain accurate values for each of the coefficient attenuation and acoustic velocity for Bulk waves. This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.

},
	url = {https://link.springer.com/chapter/10.1007/978-3-319-73192-6_32},
	author = {Hafdaoui, Hichem and Mehadjebia, Cherifa and Benatia, Djamel}
}
@proceedings {4629,
	title = {Comparative Between (LiNbO3) and (LiTaO3) in Detecting Acoustics Microwaves (BAW) Using Probabilistic Neural Network (PNN)},
	journal = {International Conference on Electronics and New Technologies- 14-15 november 2017},
	year = {2017},
	address = {M{\textquoteright}Sila, Algeria},
	abstract = {
	Our work is mainly about detecting BAW (Bulk acoustic waves), where we compared between Lithium Niobate (LiNbO3) and Lithium Tantalate (LiTaO3) ,during the propagation of acoustic microwaves in a piezoelectric substrate. In this paper, We have used the classification by Probabilistic Neural Network (PNN) as a means of numerical analysis in which we classify all the values of the real part and the imaginary part of the coefficient



	attenuation with the acoustic velocity for conclude whichever is the best in utilization for generating Bulk acoustic waves.This study will be very interesting in modeling and realization of acoustic microwaves devices (ultrasound) based on the propagation of acoustic microwaves.

},
	url = {http://virtuelcampus.univ-msila.dz/lass/wp-content/uploads/2018/02/Proceeding-INCENT2017.pdf},
	author = {Hafdaoui, Hichem and Benatia, Djamel}
}
@proceedings {4626,
	title = {Neurocomputational model of annular-ring microstrip antenna with air gap layer},
	journal = {2nd International Conference on Automatic Control, Telecommunication \& Signals (ICATS{\textquoteright}17)},
	year = {2017},
	url = {http://www.icats.ws/wp-content/uploads/2017/12/Program-icats17-final2.pdf},
	author = {Gadda Abdelkrim}
}
@proceedings {4625,
	title = {Resonant characteristics of a superconducting thin film resonator using the two-fluid method and artificial neural networks},
	journal = {2nd International Conference on Automatic Control, Telecommunication \& Signals (ICATS{\textquoteright}17)},
	year = {2017},
	url = {http://www.icats.ws/wp-content/uploads/2017/12/Program-icats17-final2.pdf},
	author = {Gadda Abdelkrim}
}
@proceedings {4624,
	title = {CAD cavity model analysis of high Tc superconducting rectangular patch printed on anisotropic substrates},
	journal = {International Conference on Electrical Engineering - Boumerdes (ICEE-B)},
	year = {2017},
	url = {https://ieeexplore.ieee.org/abstract/document/8192168},
	author = {Mahamdi Ahmed}
}
@article {4099,
	title = {An original way to obtain porous Zn(1\&ndash;x)MgxO thin films by spray pyrolysis technique, ISSN 15608034},
	journal = {Semiconductor Physics, Quantum Electronics \& Optoelectronics},
	volume = {volume 20},
	number = {N{\textdegree}1},
	year = {2017},
	pages = {pp 55-63},
	abstract = {Zn(1{\textendash}x)MgxO thin films with various concentrations of magnesium were deposited using the spray pyrolysis method. The transmittance spectra recorded for all films exhibit maxima exceeding 90\%. The band gap energy of the films with wurtzite structure increases from 3.22 up to 3.60 eV by incorporating Mg into ZnO. However, when the atomic ratio of Mg exceeded 0.4, a second crystalline phase (assigned to cubic MgO) became discernable in XRD patterns, a compressive strain was observed in the wurtzite lattice, and crystallite sizes decreased significantly. In accordance with these observations, finer grains with a pronounced columnar growth were observed in 3D AFM representations and the surface roughness decreases significantly. Finally, selective etching in water yields to porous films with a great surface-to-volume ratio, a lower refractive index and a better light transmission. These porous films with tunable band gap seem to be excellent candidates to various interesting applications.},
	url = {https://pdfs.semanticscholar.org/e4f9/8d665c11b176bac026c444ba787422fcbb08.pdf?_ga=2.192392546.932043383.1582016558-1814151887.1582016558},
	author = {Mahdjoub Abdelhakim and Hafid Abdelaali and Aida Mohammed Salah and Benhaya Abdelhamid}
}
@article {4098,
	title = {Modeling of magnetic properties (Cr/NiO/Ni) based multi-layers deposited by magnetron sputtering using Preisach model, ISSN 2495-3911},
	journal = {Materials and Devices},
	volume = {2},
	number = {1~},
	year = {2017},
	pages = {0310},
	abstract = {
	: In the present work, thin films of Cr/NiO/Ni are deposited on glass substrates using RF magnetron sputtering technique. The uniformity and homogeneity of the prepared films were controlled by varying the power of the source, the targetsubstrate distance and the pressure of the plasma gas which is argon. In order to test the Preisach Model, we carried out measurements according to two directions: parallel and perpendicular to the substrate plane using a Vibrating Sample Magnetometer at room temperature. Good agreement has been obtained by comparing the experimental hysteresis loops to the ones determined using Preisach model. We conclude that this model is powerful in predicting the magnetic properties of multilayer systems.

},
	url = {https://hal.archives-ouvertes.fr/hal-01598150/document},
	author = {Bendjerad, Adel and Benhaya, Abdelhamid and Boukhtache Sebti and Zergoug, M and Benyahia, Kaddour}
}
@article {4092,
	title = {Improved Reliability Performance of Junctionless Nanoscale DG MOSFET with Graded Channel Doping Engineering, ISSN 1862-6351},
	journal = {Physica Status Solidi {\textcopyright}},
	volume = {14},
	year = {2017},
	pages = {146-152},
	abstract = {
	In the last few years, an accelerated trend toward the miniaturization of nanoscale circuits has been recorded. In fact, this has been reflected by numerous enhancements at different levels of multi-gate structures such as the channel body or the gate material. Our aim in this work is to investigate the reliability performance of junctionless DG MOSFET including graded channel aspect. The behavior of the considered device is analyzed numerically using ATLAS-2D simulator, where degradation phenomena are accounted for in the model. The variation of some analog/RF criteria namely the transconductance and cut-off frequency are established in terms of the channel length and traps density. The obtained responses indicate the superior immunity of the graded channel device against traps-induced degradation in comparison to the conventional structure. Thus, this work can offer more insights regarding the benefit of adopting the channel doping engineering for future nanoscale electronic applications.

},
	url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.201700147},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Arar,  Djemai and Elasaad Chebaki}
}
@article {4091,
	title = {Efficiency Enhancement of a-Si:H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters, ISSN 1862-6351},
	journal = {Physica Status Solidi {\textcopyright}},
	volume = {14},
	number = {10},
	year = {2017},
	abstract = {
	In this paper, a new particle swarm optimization-based approach is proposed for the geometrical optimization of the nanowires solar cells to achieve improved optical performance. The proposed hybrid approach combines the 3-D numerical analysis using accurate solutions of Maxwell{\textquoteright}s equations and metaheuristic investigation to boost the solar cell total absorbance efficiency. Our purpose resides on modulating the electric field and increasing the light trapping capability by optimizing the radial solar cell geometrical parameters. Moreover, a comprehensive study of vertical core-shell nanowire arrays optical parameters such as the integral absorption, reflection, and total absorbance efficiency is carried out, in order to reveal the optimized radial solar cells optical performance for low-cost photovoltaic applications. We find that the proposed hybrid approach plays a crucial role in improving the nanowires solar cells optical performance, where the optimized design exhibits superior total absorbance efficiency and lower total reflection in comparison with those provided by the conventional planar design. The obtained results make the proposed global optimization approach valuable for providing high-efficiency nanowires solar cells.

},
	url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.201700146},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Arar,  Djemai and Zohir Dibi}
}
@article {4078,
	title = {RF magnetron sputtering deposition of NiO/Ni bilayer and approach of the Magnetic behavior using the Preisach model, ISSN / e-ISSN 0304-8853 / 1873-4766},
	journal = {Journal of Magnetism and Magnetic Materials},
	volume = {428},
	year = {2017},
	pages = {377-381},
	abstract = {
	Bilayer of nickel and nickel oxide were deposited on glass substrates using RF\&nbsp;magnetron sputtering\&nbsp;technique. The\&nbsp;magnetic properties\&nbsp;of the prepared thin films were carried out at room temperature in both parallel and perpendicular\&nbsp;magnetic field\&nbsp;to the sample. The Preisach model was applied to provide a\&nbsp;mathematical model\&nbsp;of the magnetic\&nbsp;hysteresis\&nbsp;loop in the case of parallel geometry, along the easy axis of the bi-layer NiO / Ni. Good agreement was obtained between the theoretical and experimental results.




},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0304885316333844},
	author = {Bendjerad, Adel and Boukhtache Sebti and Benhaya, Abdelhamid and Abdelilah, Lahmar and Zergoug, M and Luneau, Dominique}
}
@article {4064,
	title = {Effect of annealing time on the performance of tin oxide thin films ultraviolet photodetectors, ISSN 0040-6090},
	journal = {Thin Solid Films},
	volume = {Volume 623},
	year = {2017},
	pages = {pp 1{\textendash}7},
	abstract = {Tin oxide SnO2 thin films were deposited by sol gel method on glass substrates. The as-deposited thin films were then annealed at 550\&nbsp;{\textdegree}C for different time durations (15, 30, 60 and 120\&nbsp;min). Structural and morphological investigations were carried out on all samples by X-ray diffraction method and atomic force microscopy while optical properties were obtained with UV{\textendash}Visible spectrophotometer. XRD patterns reveals that the samples possess polycrystalline with rutile structure of SnO2 without any secondary phase. AFM image showed that SnO2 thin films having a smooth surface morphology. The optical properties in the visible range showed that the deposited layers have a high transmission factor. The optical band gap energy varies in the range of 3.61{\textendash}3.73\&nbsp;eV. Finally, ultraviolet (UV) detection properties of samples as an active layer in UV photodetector devices were investigated. Current-voltage characteristics of the SnO2 thin films are performed under dark and light environment, which show low dark current of 22.9\&nbsp;nA with a linear behavior and high current ration\&nbsp;\&gt;\&nbsp;104 under 2\&nbsp;V applied voltage and 120\&nbsp;min as annealing time. Whereas, high photocurrent is observed for samples annealing for 30\&nbsp;min. Moreover, the transient photoresponse of the fabricated device is reported under different annealing times.},
	url = {https://www.sciencedirect.com/science/article/pii/S0040609016308495},
	author = {Rechem Djamil and Khial Aicha and Souifi Abdelkader and Djeffal Fay{\c c}al}
}
@article {4063,
	title = {Enhancement of the absorbance figure of merit in amorphous-silicon pin solar cell by using optimized intermediate metallic layers, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 130},
	year = {2017},
	pages = {pp 473-480},
	abstract = {
	
		In this paper, a new approach based on optimized intermediate metallic thin film engineering aspect is proposed to improve the absorption behavior for amorphous-Silicon (a-Si:H) p-i-n Solar Cell. The overall solar cell optical performance comparison between the conventional design and a proposed design including three different intermediate metallic layers (Au, Ag and Ti) is carried out numerically using accurate solutions of Maxwell{\textquoteright}s equations. It is found that the proposed design with intermediate metallic sub-layers{\textquoteright} engineering provides superior integral absorption in comparison to that offered by the conventional structure. Therefore, the introduced intermediate metallic layers play a paramount role in increasing the light absorbance and modulate the electric field in the intrinsic region, where more light can be absorbed again by a-Si in the near infrared and infrared-regions using titanium as intermediate metallic layers. Furthermore, a hybrid computation based on combined numerical- metaheuristic modeling approach is proposed to boost the solar cell performance by optimizing the intermediate metallic layers. The obtained results indicate the advantage of the proposed design methodology in improving the amorphous solar cell performances.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402616312591},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Srairi Fawzi}
}
@article {4062,
	title = {Efficiency increase of hybrid organic/inorganic solar cells with optimized interface grating morphology for improved light trapping, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 130},
	year = {2017},
	pages = {pp 1092-1098},
	abstract = {In this paper, a new design methodology by optimizing the silicon/organic interface morphology is proposed to achieve superior optical behavior for pentacene-based organic/inorganic solar cells. Our purpose dwells on reducing the refracting light in the silicon and improves the absorbance behavior in the solar cell. In this context, a numerical model based on accurate solutions of Maxwell{\textquoteright}s equations is developed in order to study the impact of both interface texturization morphologies (triangular and grooves) on the optical absorbance and electrical performance. It is found that the proposed design morphology has profound implication on modulating the electric field, which increases the light trapping capability. It is also confirmed that the overall electrical performance is significantly improved as compared to the conventional organic/inorganic solar cells, where the proposed design exhibits superior integral absorption behavior and large interface area. Moreover, a new hybrid approach by combining of the numerical and metaheuristic models is developed to boost the device performance by optimizing the interface morphology. The obtained results make the proposed design methodology valuable for providing high-efficiency organic/inorganic solar cells.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402616314401},
	author = {Srairi Fawzi and Djeffal Fay{\c c}al and Ferhati Hichem}
}
@article {4061,
	title = {Novel high-performance SOI junctionless FET-based phototransistor using channel doping engineering: Numerical investigation and sensitivity analysis, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 138},
	year = {2017},
	pages = {pp 119{\textendash}126},
	abstract = {In this paper, graded channel doping (GCD) and junctionless paradigms are proposed as a new ways to improve the optical controlled field effect transistor (OCFET) and bridging the gap between the high responsivity and ultra-low power consumption. A careful mechanism study based on numerical investigation and a performance comparison between the proposed structure and both the conventional inversion mode (IM-OCFET) and the junctionless (JL-OCFET) designs is presented. It is found that the graded channel doping feature can efficiently improve the overall device optical and electrical performances. Moreover, the proposed design exhibits superior device figures of merit (FoMs) and provides ultra-sensitivity behavior as compared to both the conventional IM-OCFET and the JL-OCFET counterparts. Our investigation reveals also the outstanding capability of the proposed structure for offering the weak signal detection advantage that demonstrates the unique property of our phototransistor with GCD aspect. These characteristics not only underline the excellent switching behavior of the proposed design but also demonstrate the ability for overcoming the trade-off between the low cost and readily fabrication process in addition to ultrasensitive aspect with low power consumption. This makes the proposed GCD-JL-OCFET a potential alternative for developing low power communication systems.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402617303376},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4060,
	title = {Planar junctionless phototransistor: A potential high-performance and low-cost device for optical-communications, ISSN / e-ISSN  0030-3992 / 1879-2545},
	journal = {Optics \& Laser Technology},
	volume = {Volume 97},
	year = {2017},
	pages = {pp 29-35},
	abstract = {In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) and its comprehensive theoretical model is proposed to achieve high optical performance and low cost fabrication process. Exhaustive study of the device characteristics and comparison between the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) for similar dimensions are performed. Our investigation reveals that the proposed design exhibits an outstanding capability to be an alternative to the IM-OCFET due to the high performance and the weak signal detection benefit offered by this design. Moreover, the developed analytical expressions are exploited to formulate the objective functions to optimize the device performance using Genetic Algorithms (GAs) approach. The optimized JL-OCFET not only demonstrates good performance in terms of derived drain current and responsivity, but also exhibits superior signal to noise ratio, low power consumption, high-sensitivity, high ION/IOFF ratio and high-detectivity as compared to the conventional IM-OCFET counterpart. These characteristics make the optimized JL-OCFET potentially suitable for developing low cost and ultrasensitive photodetectors for high-performance and low cost inter-chips data communication applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030399217301342},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4059,
	title = {Role of metal layer in improving the UV-photodetector performance of TiO2/Metal/TiO2/Si structure},
	journal = {Journal of Luminescence},
	volume = {191},
	year = {2017},
	pages = {117-121},
	abstract = {In this paper, a new metallic thin film engineering aspect is proposed to achieve superior absorption for TiO2/Metal/TiO2 on Silicon substrate UV-based photodetectors (PDs). The overall device optical performance comparison with three dissimilar metallic layers (Au, Ti, and Ag) is performed numerically using accurate solutions of Maxwell׳s equations. A comprehensive study of the device optical parameters such as the integral absorption, reflection, and rejection ratio is carried out, in order to reveal the device optical performance for UV optical interconnects and environment monitoring applications. We find that the optical performance are considerably improved as compared to the conventional design, where the proposed design offers superior integral absorption and lower total reflection with an acceptable rejection ratio in comparison with those provided by the conventional one. These improvements suggest the opportunity for optimizing the proposed design using particle swarm optimization (PSO) approach for achieving higher optical performance, where excellent capability is recorded in enhancing the device optical behavior. The obtained results make the prop sed device very efficient for compatible CMOS modern technology.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0022231316308080},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Arar,  Djemai and Zohir Dibi}
}
@article {4058,
	title = {A Kriging framework for the efficient exploitation of the nanoscale junctioless DG MOSFETs including source/drain extensions and hot carrier effect},
	journal = {materials-today},
	volume = {4},
	number = { 7},
	year = {2017},
	pages = {6930-6937},
	abstract = {
	
		
			
				Recently, the Junctionless Double Gate MOSFET with source/drain extensions has proved competitive performance measures due to the reduction of the series resistance between the metal contacts and source/drain regions. However, the precise modeling of different response functions is still an important issue especially at nanoscale level because of the inclusion of complex phenomena such as quantum transport mechanisms and hot carrier degradation effect. In this perspective, our aim in the presented work is to investigate the efficiency of a novel approach based on Kriging metamodeling and multi-objective particle swarm optimization for the exploitation of the considered device in terms of some analog/RF performances. Data generated by ATLAS-2D simulator, are used to establish Kriging metamodels for the Gain and Transconductance Generation Factor. It is highlighted that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. As a result, a wide range of biasing configurations is available to the designer depending on imposed constraints.
			
		
	

},
	url = {https://www.sciencedirect.com/science/article/pii/S2214785317312956},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Elasaad Chebaki and Arar,  Djemai}
}
@article {4057,
	title = {Improved ZnO/glass thin film UV photodetector performance based on introduction of intermediate metallic sub-layers, ISSN / e-ISSN 1369-7021 / 1873-4103},
	journal = {materials-today},
	volume = {Volume 4},
	number = { Issue 7},
	year = {2017},
	pages = {pp  6930-6937},
	abstract = {In this paper, new multilayer design based on ZnO/Ag/ZnO structure is proposed as a new way to achieve UV-based photodetector (PD) with superior optical behavior. Our purpose resides on reducing the refracting light and achieving an effective absorption in the Ag metallic sub-layers. New numerical model based on accurate solutions of Maxwell{\textquoteright}s equations is developed in order to elucidate the impact of the metallic sub-layers on the UV-PD optical performance. An overall analysis regarding the optical parameters such as the integral absorption and the total reflection is conducted. It is found that the metallic sub-layers have profound implications on modulating the electric field in the structure and facilitating photon forward scattering in the ZnO sub-layers which led to better optical behavior. Moreover, Particle Swarm Optimization (PSO) approach is proposed as a metaheuristic technique to reach effectiveness absorption through carefully adjusting the Ag and ZnO sub-layers thickness. It is confirmed that the optimized design can provide superior optical performance as compared to the conventional counterpart, where the optimized multilayer design exhibits an enhancement of 60\% in the integral absorption over ZnO-based PD. The obtained results make the proposed multilayer design efficient for providing high performance PDs for communication applications.},
	url = {https://www.sciencedirect.com/science/article/pii/S221478531731310X},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4056,
	title = {Role of non-uniform channel doping in improving the nanoscale JL DG MOSFET reliability against the self-heating effects},
	journal = {Superlattices and Microstructures},
	volume = {Volume 109},
	year = {2017},
	pages = {pp 869-879},
	abstract = {In this paper, a new hybrid approach by combining numerical investigation and Support Vector Machines (SVMs) classifier is proposed to study the thermoelectric performance of nanoscale Double Gate Junctionless DG JL MOSFET. In this context, a new Figure\&nbsp;of Merit (FoM) parameter which combines both electrical and reliability characteristics is proposed. Moreover, the impact of Gaussian channel doping profile (GCD) in enhancing the DG JL MOSFET reliability against the self-heating effects (SHEs) is presented. The proposed design thermal stability and electrical characteristics are investigated and compared with those of the conventional structure in order to reveal the device performance including SHEs. It is found that the amended channel doping has a profound implication in improving both the device electrical performance and the reliability against the undesired self-heating and short channel effects (SCEs). Furthermore, the transistor thermal behavior analysis involves classification of the device performance by taking into account the device reliability. For this purpose, SVMs are adopted for supervised classification in order to identify the most favorable design configurations associated with suppressed SHEs and improved electrical performance. We find that the proposed design methodology has succeeded in selecting the better designs that offer superior reliability against the SHEs. The obtained results suggest the possibility for bridging the gap between high electrical performances with better immunity to the SHEs.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S074960361731008X},
	author = {Hichem Ferhati and Fouzi Douak and Fay{\c c}al Djeffal}
}
@article {4055,
	title = {A novel high-performance self-powered ultraviolet photodetector: Concept, analytical modeling and analysis, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume112},
	year = {2017},
	pages = {pp 480-492},
	abstract = {In this paper, a new MSM-UV-photodetector (PD) based on dual wide band-gap material (DM) engineering aspect is proposed to achieve high-performance self-powered device. Comprehensive analytical models for the proposed sensor photocurrent and the device properties are developed incorporating the impact of DM aspect on the device photoelectrical behavior. The obtained results are validated with the numerical data using commercial TCAD software. Our investigation demonstrates that the adopted design amendment modulates the electric field in the device, which provides the possibility to drive appropriate photo-generated carriers without an external applied voltage. This phenomenon suggests achieving the dual role of effective carriers{\textquoteright} separation and an efficient reduce of the dark current. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to achieve improved photoelectric behavior at zero bias that can ensure favorable self-powered MSM-based UV-PD. It is found that the proposed design methodology has succeeded in identifying the optimized design that offers a self-powered device with high-responsivity (98\&nbsp;mA/W) and superior ION/IOFF ratio (480\&nbsp;dB). These results make the optimized MSM-UV-DM-PD suitable for providing low cost self-powered devices for high-performance optical communication and monitoring applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603617320839},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4016,
	title = {Efficient CAD Model to Analysis of High Tc Superconducting Circular Microstrip Antenna on Anisotropic Substrates. Advanced Electromagnetics},
	journal = {ADVANCED ELECTROMAGNETICS},
	volume = {6},
	number = {2},
	year = {2017},
	pages = {40-45},
	abstract = {
	In this paper, an electromagnetic approach based on cavity model in conjunction with electromagnetic knowledge was developed. The cavity model combined with London{\textquoteright}s equations and the Gorter-Casimir two-fluid model has been improved to investigate the resonant characteristics of high Tc superconducting circular microstrip patch in the case where the patch is printed on uniaxially anisotropic substrate materials.\&nbsp; Merits of our extended model include low computational cost and mathematical simplify. The numerical simulation of this modeling shows excellent agreement with experimental results available in the literature. Finally, numerical results for the dielectric anisotropic substrates effects on the operating frequencies for the case of superconducting circular patch are also presented.

},
	url = {http://www.aemjournal.org/index.php/AEM/article/view/446},
	author = {Bedra, Sami and Bedra , Randa and Benkouda , Siham and Fortaki , Tarek}
}
@article {4013,
	title = {Superstrate loading effects on the resonant characteristics of high Tc superconducting circular patch printed on anisotropic materials},
	journal = {Physica C: Superconductivity and Its Applications},
	volume = {543},
	year = {2017},
	pages = {1-7},
	abstract = {
	In this paper, the effects of both anisotropies in the substrate and superstrate loading on the resonant frequency and bandwidth of high-Tc superconducting circular microstrip patch in a substrate-superstrate configuration are investigated. A rigorous analysis is performed using a dyadic Galerkin{\textquoteright}s method in the vector Hankel transform domain. Galerkin{\textquoteright}s procedure is employed in the spectral domain where the TM and TE modes of the cylindrical cavity with magnetic side walls are used in the expansion of the disk current. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. London{\textquoteright}s equations and the two-fluid model of Gorter and Casimir are used in the calculation of the complex surface impedance of the superconducting circular disc. The accuracy of the analysis is tested by comparing the computed results with previously published data for several anisotropic substrate-superstrate materials. Good agreement is found among all sets of results. The numerical results obtained show that important errors can be made in the computation of the resonant frequencies and bandwidths of the superconducting resonators when substrate dielectric anisotropy, and/or superstrate anisotropy are ignored. Other theoretical results obtained show that the superconducting circular microstrip patch on anisotropic substrate-superstrate with properly selected permittivity values along the optical and the non-optical axes combined with optimally chosen structural parameters is more advantageous than the one on isotropic substrate-superstrate by exhibiting wider bandwidth characteristic.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921453417304082},
	author = {Bedra, Sami and Bedra , Randa and Benkouda , Siham and Fortaki , Tarek}
}
@article {4012,
	title = {An efficient study of circular microstrip antenna on suspended and composite substrates, e-ISSN 1572-8137},
	journal = {Journal of Computational Electronics},
	volume = {Volume 16},
	number = {N{\textdegree} 3},
	year = {2017},
	pages = {pp 922-2017},
	abstract = {In this paper, an efficient full-wave analysis of a circular microstrip patch printed on suspended and composite substrates is performed using a dyadic Green{\textquoteright}s function formulation. Galerkin{\textquoteright}s technique is used in the resolution of the integral equation of the electric field. The TM set of modes issued, from the magnetic wall cavity model, are used to expand the unknown currents on the circular patch. The radiation patterns are expressed regarding the transforms of the currents. The convergence of the method is proven by calculating the resonant frequencies, half-power bandwidths, and quality factors for several configurations. The computed results are found to be in excellent agreement with those observed in the literature. The numerical results obtained show that the bandwidth increases with the increase in the thickness of the suspended or composite substrates, especially for low permittivity of the second layer. Also, it is demonstrated that the resonant frequencies of the circular microstrip patch on suspended and composite substrates can be adjusted to obtain the maximum operating frequency of the antenna. Finally, the effect of the presence of the second layer under the circular patch on the radiation patterns is also investigated.},
	url = {https://link.springer.com/article/10.1007/s10825-017-1012-9},
	author = {Bedra Sami and Benkouda Siham and Fortaki Tarek}
}
@article {4011,
	title = {Neurospectral computation for the resonant characteristics of microstrip patch antenna printed on uniaxially anisotropic substrates},
	journal = {International Journal of Microwave and Wireless Technologies},
	volume = {9},
	number = {3},
	year = {2017},
	pages = {613-620},
	abstract = {
	
		
			
				
					Modeling and design of rectangular microstrip patch printed on isotropic or anisotropic substrate are accomplished in this paper. The use of spectral domain method in conjunction with artificial neural networks (ANNs) to compute the resonant characteristics of rectangular microstrip patch printed on isotropic or anisotropic substrates. The moment method implemented in the spectral domain offers good accurateness, but its computational cost is high owing to the evaluation of the slowly decaying integrals and the iterative nature of the solution process. The paper introduces the electromagnetic knowledge combined with ANN in the analysis of rectangular microstrip antenna on uniaxially anisotropic substrate to reduce the complexity of the spectral domain method and to minimize the CPU time necessary to obtain the numerical results. The numerical comparison between neurospectral and conventional moment methods shows significant improvements in time convergence and computational cost. Hence, the use of neurospectral approach presented here as a promising fast technique in the design of microstrip antennas.
				
			
		
	



	\&nbsp;



	
		\&nbsp;
	

},
	url = {https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/neurospectral-computation-for-the-resonant-characteristics-of-microstrip-patch-antenna-printed-on-uniaxially-anisotropic-substrates/859FA2B6042DA2},
	author = {Barkat, Lamia and Bedra, Sami and Fortaki , Tarek and Bedra , Randa}
}
@article {3984,
	title = {Efficiency Enhancement of a-Si:H/c-Si-Based Radial Solar Cell by Optimizing the Geometrical and Electrical Parameters, ISSN / e-ISSN 1610-1642 / 1610-1642},
	journal = {Current topics in solid state physics},
	year = {2017},
	abstract = {
	In this paper, a new particle swarm optimization-based approach is proposed for the geometrical optimization of the nanowires solar cells to achieve improved optical performance. The proposed hybrid approach combines the 3-D numerical analysis using accurate solutions of Maxwell{\textquoteright}s equations and metaheuristic investigation to boost the solar cell total absorbance efficiency. Our purpose resides on modulating the electric field and increasing the light trapping capability by optimizing the radial solar cell geometrical parameters. Moreover, a comprehensive study of vertical core-shell nanowire arrays optical parameters such as the integral absorption, reflection, and total absorbance efficiency is carried out, in order to reveal the optimized radial solar cells optical performance for low-cost photovoltaic applications. We find that the proposed hybrid approach plays a crucial role in improving the nanowires solar cells optical performance, where the optimized design exhibits superior total absorbance efficiency and lower total reflection in comparison with those provided by the conventional planar design. The obtained results make the proposed global optimization approach valuable for providing high-efficiency nanowires solar cells.

},
	url = {https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.201700146},
	author = {Hichem Ferhati and Fay{\c c}al Djeffal and Arar,  Djemai and Zohir Dibi}
}
@article {3978,
	title = {Comparative Analysis of Two Op-Amp Topologies for a 40MS/s 8-bitPipelined ADC in 0.18μm CMOS Technology, ISSN / e-ISSN 1790-5052 / 2224-3488},
	journal = {WSEAS TRANSACTIONS ON SIGNAL PROCESSING},
	volume = {Volume 13},
	year = {2017},
	pages = {pp 83-89},
	abstract = {The performances of two full differential operational amplifiers (Op-Amps) telescopic and folded-cascode are evaluated to satisfy the stringent requirements on the amplifier to be used in a Multiplying Digital-to-Analog Converter (MDAC) stage of a pipelined ADC (Analog-to-Digital Converter). The paper shows the solutions found to reach high gain, wide bandwidth and short settling time without degrading too much the output swing. The Op-Amp specifications are extracted according to the ADC requirements, then the two Op-Amp topologies are designed, tested and their performances are compared. Simulation results show that the Op-Amp folded-cascode topology is more suitable architecture for pipelined ADC than the telescopic one. Moreover, the use of this type of Op-Amp generates an Integral Non-Linearity (INL) error less than that of the telescopic one. The analyses and simulation results are obtained using 0.18 {\textmu}m AMS (Austria Mikro System) CMOS process parameters with a power supply voltage of 1.8V. The predicted performance is verified by analysis and simulations using Cadence EDA simulator.},
	url = {http://www.wseas.org/multimedia/journals/signal/2017/a205801-593.php},
	author = {Dendouga Abdelghani and Oussalah Slimane}
}
@article {3969,
	title = {An efficient small size electromagnetic energy harvesting sensor for low-DC-power applications, ISSN / e-ISSN 1751-8725 / 1751-8733},
	journal = { IET Microwaves, Antennas \& Propagation},
	volume = {Volume 11},
	number = { Issue 4},
	year = {2017},
	pages = {pp 483 - 489},
	abstract = {An efficient small size electromagnetic energy harvesting sensor for low-DC-power applications is proposed. The sensor consists of two main parts: a dual polarisation square patch antenna used to collect the RF energy at a central frequency of 2.45 GHz, and two voltage doublers rectifier circuit for the RF-to-DC conversion. The overall size of the design is 50 {\texttimes} 50 {\texttimes} 6.2 mm\&nbsp;3\&nbsp;. Firstly, the antenna is designed using high-frequency structure simulator software; followed by the design of the rectifier circuit in advanced design system. After simulations, a sensor prototype is fabricated using F4B as the antenna substrate. Measurements show that the sensor achieves a comparatively high maximum measured efficiency of 41\% for a power level of -10 dBm. The sensor has a simple structure, it is compact sized, light weight, and presents a high RF-to-DC conversion efficiency for low-RF-power levels which can be used to charge different low-DC-power devices.},
	url = {https://ieeexplore.ieee.org/document/7887591},
	author = {Meddour Fay{\c c}al and Dibi Zohir}
}
@inbook {6185,
	title = {Multi-objective Design of Nanoscale Double Gate MOSFET Devices Using Surrogate Modeling and Global Optimization},
	booktitle = {Intelligent Nanomaterials, II, Second Edition},
	year = {2016},
	pages = {395-427},
	publisher = {Willey},
	organization = {Willey},
	abstract = {
	In recent years, the design and fabrication ofmulti-gate Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) have attracted more efforts due to their high appropriateness for advanced integration circuits{\textquoteright} applications. In fact, the boost of MOSFET structures is a battle against parasitic phenomena appearing at the nanoscale level. Short channel and quantum confinement effects are among the critical drawbacks that need to be remedied carefully. On the other hand, the hot carrier degradation effect is mainly a reliability concern affecting the device per- formance after long duration of work. In response to the high computational costs related to the development of physi- cal based models for Double Gate (DG) MOSFETs including all these effects, more flexible alternatives have been proposed for the prediction of device performances. Our aim in this chapter is to investigate the efficiency of a new proposed frame- work, built upon Kriging metamodeling and Non-dominated Sorting Genetic Algorithm version II (NSGA II), for the optimal design in terms of OFF-current, threshold voltage and swing factor. The input variables of interest are limited to the geometrical parameters namely the channel length and thickness. Data generated according to computer experiments, based on ATLAS 2-D simulator, are used to identify and adjust Kriging surrogate models. It is emphasized that the obtained models can be used accurately in a multi-objective context to offer several Pareto optimal configurations. Therefore, a wide range of selection possibilities is avail- able to the designer depending on situations under consideration.

},
	url = {https://www.researchgate.net/publication/308994823_Multi-objective_Design_of_Nanoscale_Double_Gate_MOSFET_Devices_Using_Surrogate_Modeling_and_Global_Optimization},
	author = {Bentercia, Toufik and Fay{\c c}al Djeffal and Elasaad Chebaki}
}
@mastersthesis {5354,
	title = {Etude des d{\'e}fauts d\&rsquo;interface Si/SiO2 dans les transistors MOS : simulation sous SILVACO et mod{\'e}lisation},
	year = {2016},
	author = {Chenaf  Tarek}
}
@mastersthesis {5346,
	title = {R{\'e}alisation d\&rsquo;un syst{\`e}me de pousse seringue {\`a} base d\&rsquo;un moteur pas {\`a} pas unipolaire},
	year = {2016},
	author = {Bennini Aziz}
}
@mastersthesis {5345,
	title = {Etude et r{\'e}alisation d\&rsquo;un agitateur magn{\'e}tique pour les analyses biochimiques},
	year = {2016},
	author = {Boudouh Adel}
}
@mastersthesis {5330,
	title = {Redondance logicielle pour la tol{\'e}rance aux fautes des communications},
	year = {2016},
	author = {Arar Chafik}
}
@mastersthesis {5328,
	title = {Commande  Robuste d\&rsquo;un Pendule Invers{\'e}},
	year = {2016},
	author = {Habbeddine Saad}
}
@mastersthesis {5327,
	title = {Mod{\'e}lisation et Commande d\&rsquo;un Robot Manipulateur {\`a} Articulations Flexibles},
	year = {2016},
	author = {Bendib, Hafededdine}
}
@mastersthesis {5320,
	title = {D{\'e}tection et g{\'e}n{\'e}ration des micro-ondes acoustiques de volume dans les structures pi{\'e}zo{\'e}lectriques},
	year = {2016},
	type = {Doctorat},
	abstract = {
	Dans ce travail, nous proposons une nouvelle m{\'e}thode pour la d{\'e}tection des micro-ondes acoustiques de volume dans un substrat pi{\'e}zo{\'e}lectrique (Niobate de Lithium LiNbO3). Nous avons utilis{\'e} la classification par r{\'e}seaux probabilistes de neurones comme un moyen d{\textquoteright}analyse num{\'e}rique afin de classer toutes les valeurs de la partie r{\'e}elle et la partie imaginaire du coefficient d{\textquoteright}att{\'e}nuation pour les diff{\'e}rentes vitesses acoustiques en construisant ainsi un mod{\`e}le de d{\'e}tection efficace des ondes de volume. Cette {\'e}tude sera tr{\`e}s int{\'e}ressante dans la mod{\'e}lisation et la r{\'e}alisation des dispositifs micro-ondes acoustiques tels que les dispositifs {\`a} ultrasons bas{\'e} sur la propagation des micro-ondes acoustiques de volume. En plus, nous pouvons appliquer cette technique sur n{\textquoteright}importe qu{\textquoteright}elle structure pi{\'e}zo{\'e}lectrique poss{\'e}dant la m{\^e}me classe cristallographique, il suffit juste de changer les param{\`e}tres caract{\'e}ristiques du mat{\'e}riau consid{\'e}r{\'e}.

},
	url = {http://eprints.univ-batna2.dz/319/},
	author = {Hafdaoui, Hichem}
}
@mastersthesis {5309,
	title = {Analyse d\&$\#$39;un r{\'e}sonateur planaire r{\'e}glable par l\&$\#$39;{\'e}quivalence avec une substance monocouche},
	year = {2016},
	author = {Chabane Amel}
}
@mastersthesis {5297,
	title = {Reconstitution d\&rsquo;une sc{\`e}ne 3D {\`a} partir d\&rsquo;indices visuels 2D},
	year = {2016},
	author = {BRIOUA Abdelkrim}
}
@mastersthesis {5292,
	title = {Contribution {\`a} la Conception des circuits Mode de courant en Technologie CMOS},
	year = {2016},
	author = {Hanfoug Salah}
}
@mastersthesis {5291,
	title = {Mod{\'e}lisation des transistors organiques},
	year = {2016},
	author = {BENACER Imad}
}
@mastersthesis {5286,
	title = {Mod{\'e}lisation d\&rsquo;un ENFET},
	year = {2016},
	author = {Seyf el islam Farah}
}
@mastersthesis {5285,
	title = {Mod{\'e}lisation d\&rsquo;un ISFET},
	year = {2016},
	author = {BOUDJENIFA Bahia}
}
@proceedings {4660,
	title = {Ge on porous silicon/Si substrate analysed by Raman spectroscopy and Atomic force microscopy},
	journal = {First International Symposium on Dielectric Materials and Applications},
	year = {2016},
	url = {http://www.mrforum.com/product/9781945291197-38/},
	author = {R amdane Mahamdi}
}
@proceedings {4659,
	title = {TEM and XRD characterizations of epitaxial Silicon layer fabricated on double layer porous Silicon},
	journal = {First International Symposium on Dielectric Materials and Applications},
	year = {2016},
	url = {http://www.mrforum.com/product/9781945291197-62/},
	author = {R amdane Mahamdi}
}
@proceedings {4658,
	title = {Modeling and Optimization Techniques of Boron diffusion parameters in MOS transistor Using SILVACO ATHENA and Matlab},
	journal = {First International Symposium on Dielectric Materials and Applications},
	year = {2016},
	url = {http://www.mrforum.com/product/9781945291197-19/},
	author = {R amdane Mahamdi}
}
@proceedings {4657,
	title = {Enhancement of the optical performance of ZnO thin-film using metallic nano-particles for optoelectronic applications},
	journal = {17th International conference on Sciences and Techniques of Automatic control and computer engineering STA},
	year = {2016},
	url = {https://ieeexplore.ieee.org/document/7952007/},
	author = {R amdane Mahamdi}
}
@proceedings {4651,
	title = {Enhancement of the optical performance of ZnO thin-film using metallic nano-particles for optoelectronic applications},
	journal = {17th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA)},
	year = {2016},
	url = {DOI: 10.1109/STA.2016.7952007},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4647,
	title = {Modeling of boron nitride-based nanotube biological sensor using neural networks},
	journal = {17th International Conference on Sciences and Techniques of Automatic Control and Computer Engineering (STA)},
	year = {2016},
	url = {DOI: 10.1109/STA.2016.7951987},
	author = {Djeffal Fay{\c c}al}
}
@proceedings {4640,
	title = {Simulation and control of multi-agents for mobile manipulator robot},
	journal = {2nd INTERNATIONAL CONFERENCE ON PATTERN ANALYSIS AND INTELLIGENT SYSTEMS },
	year = {2016},
	author = {Khireddine Mohamed Salah}
}
@proceedings {4638,
	title = {A neural network MPP tracker using a Buck-Boost DC/DC converter for photovoltaic systems},
	journal = {5th International Conference on Systems and Control (ICSC)},
	year = {2016},
	url = {https://www.semanticscholar.org/paper/A-neural-network-MPP-tracker-using-a-Buck-Boost-for-Makhloufi-Abdessemed/5da86d062f81d10b7f2fd75514185270825ed059},
	author = {Khireddine Mohamed Salah}
}
@proceedings {4635,
	title = {Mobile robot trajectory tracking using PID fast terminal sliding mod inverse dynamic control},
	journal = {4th international conference on control, Engineering and information technology (CEIT-2016)},
	year = {2016},
	author = {Mallem Ali}
}
@proceedings {4632,
	title = {A neural network MPP tracker using a Buck-Boost DC/DC converter for photovoltaic systems},
	journal = {5th International Conference on Systems and Control (ICSC)},
	year = {2016},
	author = {Makhloufi Mohamed Tahar}
}
@proceedings {4623,
	title = {A rigorous full-wave analysis of high TC superconducting circular disc microstrip antenna},
	journal = {8th International Conference on Modelling, Identification and Control (ICMIC 2016)},
	year = {2016},
	url = {https://ieeexplore.ieee.org/abstract/document/7804205},
	author = {Bouraiou Abdelouahab}
}
@article {4097,
	title = {Modeling of Magnetic Properties of Iron Thin Films Deposited by RF Magnetron Sputtering using Preisach Model},
	journal = {Serbian Journal of Electrical Engineering},
	volume = {13},
	number = {2},
	year = {2016},
	pages = {229-238},
	abstract = {
	Iron thin films were deposited on glass substrates using RF magnetron sputtering and their optimal deposition conditions were determined. The structure properties were analyzed using x-ray diffraction (XRD) and their magnetic hysteresis loops were obtained by Vibrating Sample Magnetometer (VSM) at room temperature. In this situation, the magnetic field is either parallel or perpendicular to the substrate plane. The main contribution of this work is to characterize the thin layers and present a mathematical model that can get best fit of the characteristics B(H). By using Preisach model, good agreement was obtained between theoretical and experimental results in both cases.

},
	url = {https://www.researchgate.net/publication/305042230_Modeling_of_magnetic_properties_of_iron_thin_films_deposited_by_RF_magnetron_sputtering_using_Preisach_model},
	author = {Bendjerad, Adel and Boukhtache, Sebti and Benhaya, Abdelhamid and Luneau, Dominique and Abaidia, Seddik El Hak and Benyahia, Kaddour}
}
@article {4096,
	title = {Techniques of Boron diffusion parameters in MOS transistor Using SILVACO ATHENA and Matlab, ISSN 2069-7201},
	journal = {Journal of Advanced Research in Physics},
	volume = {6},
	number = {2},
	year = {2016},
	pages = {021610},
	abstract = {
	Silicon oxide (SiO2) is a good dielectric material in metal-oxide-semiconductor (MOS) structures. The improved SiO2\&nbsp;quality requires adequate study of doping diffusion in this structure to maintain the absence of the different impurities in the interface Poylsilicon/SiO2. For this we studied a theoretical model of boron diffusion before and after thermal annealing in a highly-doped polysilicon films. The model takes into account the distribution of vacancy mechanism by associating parameters and effects related to high concentrations. Based on the literature the model is solved using the engineering software tool MATLAB, following a well-defined algorithm. The model is validated with the help of simulation results obtained from Silvaco.

},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=93},
	author = {Naima Guenifi and R amdane Mahamdi and Ibrahim Rahmani}
}
@article {4095,
	title = {Ge on porous silicon/Si substrate analyzed by Raman spectroscopy and atomic force microscopy, ISSN 2069-7201.},
	journal = {Journal of Advanced Research in Physics},
	volume = {volume 6},
	number = {N{\textdegree}2 },
	year = {2016},
	pages = {pp  021609~},
	abstract = {In this study, single crystal Ge layers have been deposited by molecular beam epitaxy on PSi substrate, with different thicknesses (40 nm and 80 nm) at the growth temperature of 400{\textdegree}C. Raman and Atomic force microscopy (AFM) have been applied for investigation of photoluminescence, structural and morphological properties of the Ge on PSi layers. The results show a stronger Raman intensity of PSi due to change of its optical constant. Similarly the Si/Ge/PSi sample shows a peak at 399 cm-1 but with lower intensity compared with that of PSi probably due to the Si emission partially covered by the Ge inside the pores. Besides that a sharp Raman peak at 298 cm-1 is observed which reflects Raman active transverse optical mode of the introduced Ge which indicates the growth of Ge with good crystallinity. AFM characterization shows the rough silicon surface which can be regarded as a condensation point for small skeleton clusters to form, with different size of pores. These changes are highly responsible for its photoluminescence in the red wavelength range. This study explores the applicability of prepared Ge/PSi layers for its various applications in advanced optoelectronics field and silicon-on-insulator applications.},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=92},
	author = {R amdane Mahamdi and Gouder, Soraya and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4094,
	title = {Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous silicon, ISSN 2069-7201},
	journal = {Journal of Advanced Research in Physics},
	volume = {volume 6},
	number = {N{\textdegree}2},
	year = {2016},
	pages = {pp 021607},
	abstract = {Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=90},
	author = {Gouder, Soraya and R amdane Mahamdi and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4093,
	title = {Numerical Investigation of A New Junctionless Phototransistor for High-Performance and Ultra-Low Power Infrared Communication Applications, ISSN 1693-6930},
	journal = {TELKOMNIKA},
	volume = {volume 14},
	year = {2016},
	pages = { pp 1-3},
	abstract = {In this paper, a new junctionless optical controlled field effect transistor (JL-OCFET) is proposed to improve the device performance as well as achieving low power consumption. An overall optical and electrical performances comparison of the proposed junctionless design and the conventional inversion mode structure (IM-OCFET) has been developed numerically, to assess the optical modulation behavior of the OCFET for low power optical interconnections applications. It is found that, the proposed design demonstrates excellent capability in decreasing the phototransistor power consumption for inter-chip optical communication application. Moreover, the proposed device offers superior sensitivity and ION/IOFF ratio, in addition to lower signal to noise ratio as compared to the conventional IM-OCFET structure. The obtained results indicate the crucial role of the junctionless (JL) design in enhancing the phototransistor performance and reducing the total power dissipation. Such a very sensitive OCFET can be very promising in the future low power optical receiver less compatible to CMOS modern technology for high-quality interchips data communication applications.},
	url = {https://www.researchgate.net/publication/312202116_Numerical_Investigation_of_A_New_Junctionless_Phototransistor_for_High-Performance_and_Ultra-Low_Power_Infrared_Communication_Applications},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al and Bentercia Toufik}
}
@article {4089,
	title = {Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642},
	journal = {Physica Status Solidi {\textcopyright} Current Topics in Solid State Physics},
	volume = {13},
	number = {4},
	year = {2016},
	pages = {151-155},
	abstract = {
	The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. ({\textcopyright} 2016 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim)

},
	url = {https://www.researchgate.net/publication/298899546_Numerical_investigation_of_nanoscale_double-gate_junctionless_MOSFET_with_drain_and_source_extensions_including_interfacial_defects},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Arar,  Djemai and Mohamed Meguellati}
}
@article {4088,
	title = {Journal of SemiconductorsPAPERStructural, optical, morphological and electrical properties of undoped and Al-doped ZnO thin films prepared using sol\&mdash;gel dip coating process},
	journal = {Journal of Semiconductors},
	volume = {37},
	number = {11},
	year = {2016},
	abstract = {
	In this work, sol{\textemdash}gel dip-coating technique was used to elaborate ZnO pure and ZnO/Al films. The impact of Al-doped concentration on the structural, optical, surface morphological and electrical properties of the elaborated samples was investigated. It was found that better electrical and optical performances have been obtained for an Al concentration equal to 5\%, where the ZnO thin films exhibit a resistivity value equal to 1.64104 Ωcm. Moreover, highest transparency has been recorded for the same Al concentration value. The obtained results from this investigation make the developed thin film structure a potential candidate for high optoelectronic performance applications.

},
	url = {https://iopscience.iop.org/article/10.1088/1674-4926/37/11/113001},
	author = {Boukhenoufa, Noureddine and R amdane Mahamdi and Rechem, Djamil}
}
@article {4087,
	title = {Modeling, control and optimization of a new swimming microrobot design},
	journal = {Engineering Letters },
	volume = {Volume 24},
	number = { N{\textdegree}1},
	year = {2016},
	pages = {pp 106-112},
	abstract = {This article deals with the study of a new swimming microrobot behavior using an analytical investigation. The analyzed microrobot is associated by a spherical head and hybrid tail. The principle of modeling is based on solving of the coupled elastic/fluidic problems between the hybrid tail{\textquoteright}s deflections and the running environment. In spite of the resulting nonlinear model can be exploited to enhance both the sailing ability and also can be controlled in viscous environment using nonlinear control investigations. The applications of the micro-robot have required the precision of control for targeting the running area in terms of response time and tracking error. Due to these limitations, the Flatness-ANFIS based control is used to ensure a good control behavior in hazardous environment. Our control investigation is coupled the differential flatness and adaptive neuro-fuzzy inference techniques, in which the flatness is used to planning the optimal trajectory and eliminate the nonlinearity effects of the resulting model. In other hand, the neuro-fuzzy inference technique is used to build the law of control technique and minimize the dynamic error of tracking trajectory. In particular, we deduct from a non linear model to an optimal model of the design parameter{\textquoteright}s using Multi-Objective genetic algorithms (MOGAs). In addition, Computational fluid dynamics modeling of the microrobot is also carried out to study the produced thrust and velocity of the microrobot displacement taking into account the fluid parameters. Our analytical results have been validated by the recorded good agreement between the numerical and analytical results.},
	url = {https://www.researchgate.net/publication/298711278_Modeling_Control_and_Optimization_of_a_New_Swimming_Microrobot_Design},
	author = {Fawzi Srairi and Lamir Saidi and Fay{\c c}al Djeffal and Mohamed Meguellati}
}
@article {4077,
	title = {Ge on porous silicon/Si substrate analyzed by Raman spectroscopy and atomic force microscopy},
	journal = {Journal of A dvanced Research in Physics},
	volume = {6},
	number = {2},
	year = {2016},
	pages = {021609},
	abstract = {In this study, single crystal Ge layers have been deposited by molecular beam epitaxy on PSi substrate, with different thicknesses (40 nm and 80 nm) at the growth temperature of 400{\^A}{\textdegree}C. Raman and Atomic force microscopy (AFM) have been applied for investigation of structural and morphological properties in order to explain the photoluminescence properties of the Ge on PSi layers. The results show a stronger Raman intensity of PSi due to change of its optical constant. Similarly, the Si/Ge/PSi sample shows a peak at 399 cm-1 but with lower intensity compared with that of PSi probably due to the Si emission partially covered by the Ge inside the porous. Besides that, a sharp Raman peak at 298 cm-1 is observed which reflects Raman active transverse optical mode of the introduced Ge which indicate the growth of Ge with good crystallinity. AFM characterization shows the rough silicon surface which can be regarded as a condensation point for small skeleton clusters to form, with different size of pores. These changes are highly responsible for its photoluminescence in the red wavelength range. This study explores the applicability of prepared Ge/PSi layers for its various applications in advanced optoelectronics field and silicon-on-insulator applications.},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=92\&path\%5B\%5D=93},
	author = {R amdane Mahamdi and Gouder, Soraya and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4076,
	title = {Microstructure and crystallinity of epitaxial silicon layer fabricated on double porous siliconcs},
	journal = {Journal of A dvanced Research in Physics},
	volume = {6},
	number = {2},
	year = {2016},
	pages = {021607},
	abstract = {
	Single crystal Silicon (Si) layers have been deposited by molecular beam epitaxy on double-layer porous silicon (PSi). We investigate the structure and morphology of double-layer PSi as fabricated and after annealing at high temperature. We show that a top thin layer with a low porosity is used as a seed layer for epitaxial growth. While, the underlying higher porosity layer is used as an easily detectable etch stop layer. The morphology and structure of epitaxial Si layer grown on the double-layer PSi are investigated by transmission electron microscopy and high resolution X-ray diffraction. The results show that, an epitaxial Si layer with a low defect density can be grown. Epitaxial growth of thin crystalline layers on double-layer PSi can provide opportunities for silicon-on-insulator applications and Si-based solar cells provided that the epitaxial layer has a sufficient crystallographic quality.

},
	url = {http://stoner.phys.uaic.ro/jarp/index.php?journal=jarp\&page=article\&op=view\&path\%5B\%5D=90\&path\%5B\%5D=91},
	author = {Gouder, Soraya and R amdane Mahamdi and Stephanie Escoubas and Luc Favre and Mansour Aouassa and Aantoine Ronda and Isabelle Berezier}
}
@article {4072,
	title = {Impact of the drain and source extensions on nanoscale Double-Gate Junctionless MOSFET analog and RF performances},
	journal = {Materials Science in Semiconductor Processing},
	volume = {42},
	year = {2016},
	pages = {264-267},
	abstract = {
	Multi-Gate Junctionless MOSFETs are promising devices to overcome the undesired short channel effects for low cost nanoelectronic applications. However, the high series resistance associated to the source and drain extensions can arise as a serious problem when dealing with uniformly doped channel, which leads to the degradation of the device performance. Therefore, in order to obtain a global view of Double-Gate Junctionless (DGJ) MOSFET performance under critical conditions, new designs and models of nanoscale DGJ MOSFET including analog performance are important for the comprehension of the fundamentals of such device characteristics. In the present paper, a numerical investigation for the drain current and small signal characteristics is conducted for the DGJ MOSFET by including highly doped extension regions. The proposed approach, which is from a practical viewpoint a feasible technique by introducing only one ion implantation step, provides a good solution to improve the drain current, small signal parameters, analog/RF behavior and linearity of DGJ MOSFET for high performance analog applications. In this context, I{\textendash}V and analog characteristics of the proposed design are investigated by 2-D numerical modeling and compared with conventional DGJ MOSFET characteristics.

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S1369800115300986},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Elasaad Chebaki and Arar,  Djemai}
}
@article {4071,
	title = {A new high-performance phototransistor design based on both surface texturization and graded gate doping engineering, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 15},
	number = {N{\textdegree}1},
	year = {2016},
	pages = {pp 301-310},
	abstract = {In this paper, we propose a new optically controlled field effect transistor, OC-FET, based on both surface texturization and graded gate doping engineering. The proposed design consists of a gate with both graded doping and surface texturization aspects to ensure high efficient light absorption and low dark current, respectively. Moreover, using an analytical investigation, an overall performance comparison of the proposed dual texturized gate (DTG) OC-FET device and conventional OC-FETs has been studied in order to confirm the enhanced optical and electrical performance of the proposed design in terms of increased photoresponsivity (R), optical gain (Formula presented.) ratio, drain current driving capability (Formula presented.) and high signal to noise ratio. Simulations show very good agreement between the results of the developed analytical models and those of TCAD software for wide range of design parameters. The developed analytical models are used to formulate the objective functions to optimize the device performance using a multi-objective genetic algorithm (MOGA). The proposed MOGA-based approach is used to search the optimal design parameters, for which the electrical and optical device performance is maximized. The obtained superior electrical performance suggests that our DTG OC-FET offers great promise as optical sensors and transducers for CMOS-based optical communications.},
	url = {https://link.springer.com/article/10.1007/s10825-015-0752-7},
	author = {Djeffal Fay{\c c}al and Ferhati Hichem}
}
@article {4070,
	title = {Role of gradual gate doping engineering in improving phototransistor performance for ultra-low power applications, ISSN 1569-8025},
	journal = {Journal of Computational Electronics },
	volume = {Volume 15},
	year = {2016},
	pages = {pp 550-556},
	abstract = {In this paper, an optimized ultra-low power phototransistor design based on gradual gate doping engineering is proposed. Using an analytical investigation and numerical simulation, an overall performance comparison of the proposed phototransistor design and conventional structure has been studied, in order to show the improved characteristics provided by the proposed design in terms of increased \(I_{ON}/I_{OFF}\) ratio and superior photoresponsivity capability. The results obtained from our analytical investigation are validated by comparison with the numerical simulations, thus establishing the accuracy of our analytical investigation. Moreover, the developed analytical models are used to optimize the proposed design using a genetic algorithm (GA) based-computation. The advantages offered by the proposed design suggest the possibility to overcome the most challenging problem with the power requirements of the optical interconnect: power consumption in the light emitter and in the receiver. In this context, the proposed phototransistor owing to the high responsivity requires less optical power from the light emitter to achieve an acceptable signal-to-noise ratio compared to the phototransistor with conventional design.},
	url = {https://link.springer.com/article/10.1007/s10825-015-0779-9},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4069,
	title = {New high performance ultraviolet (MSM) TiO2/Glass photodetector based on diffraction grating for optoelectronic applications, ISSN 0030-4026},
	journal = {Optik},
	volume = {Volume 127},
	number = {Issue 18},
	year = {2016},
	pages = {pp 7202-7209},
	abstract = {In this paper, a new TiO2-based UV photodetector including back triangular texturization morphology has been investigated numerically using accurate solutions of Maxwell{\textquoteright}s equations. A quantitative study of the device optical parameters like responsivity, sensitivity, detectivity, derived current capability and signal to noise ratio have been carried out in order to review the device overall optical performance for UV optical communication applications. Based on the obtained results, we have found that the device performance figures-of-merit (FoMs) governing the optical behavior is strongly improved as compared to its conventional planar counterpart, where the proposed design offers superior photocurrent, higher responsivity and sensitivity in comparison with those provided by the planar structure. These results led us to suggest the optimization of the proposed morphology using genetic algorithm (GA), in order to improve the electric field confinement and UV-light trapping in TiO2 absorber layer, where excellent ability has been recorded in enhancing the device absorbance. In this context, photodetector with optimized triangular texturization exhibits a 432\% improvement, in term of responsivity, over planar structures and 120\% improvement over the textured device without optimization. Thus, these encouraging results make the proposed device an extremely efficient candidate for high performance optoelectronic applications.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0030402616304879},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4068,
	title = {Role of Optimized Grooves Surface-Textured Front Glass in Improving TiO2 Thin Film UV Photodetector Performance, ISSN / e-ISSN 1530-437X / 1558-1748},
	journal = { IEEE Sensors Journal },
	volume = { Volume 16 },
	number = { Volume 16 },
	year = {2016},
	pages = { pp 5618-5625},
	abstract = {In this paper, the impact of the surface-textured front glass on the absorption of TiO 2 /glass thin-film ultraviolet (UV) photodetector is investigated, in order to achieve the dual role of increasing the scattering of UV-light as well as reducing the refracting UV-light in the glass. The efficient control of these phenomena may lead to more electric field confinement and UV-light trapping in TiO 2 absorber layer. Moreover, semianalytical modeling combined with particle swarm optimization is carried out for studying and enhancing the metal-semiconductor-metal photodetector optical and electrical performances. The results obtained from our semianalytical investigation are validated by comparison with the experimental data. It is found that the absorbance increases significantly by about 51\% in optimized design over the planar structure, which is expected to improve the photodetector figures of merit. In this context, photodetector with optimized grooves texturization exhibits a 341\% improvement, in terms of responsivity, in comparison with the planar structure and 275\% improvement with respect to the textured device without optimization. The obtained results make the proposed design methodology a promising alternative for high-performance optoelectronic applications.},
	url = {https://ieeexplore.ieee.org/document/7480766},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
@article {4067,
	title = {Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 15},
	year = {2016},
	pages = {pp 1308-1315},
	abstract = {The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green{\textquoteright}s function formalism performed with the self-consistent solution of the Poisson and Schr{\"o}dinger equations. The device performance is investigated in terms of leakage current, on-state current, ION/IOFF current ratio, subthreshold slope, drain-induced barrier lowering, as well as transconductance, drain conductance, and intrinsic gate delay. This study is carried out over a wide range of dielectric permittivities at low temperatures ranging from room temperature down to 100\&nbsp;K.},
	url = {https://link.springer.com/article/10.1007/s10825-016-0901-7},
	author = {Rechem Djamil and Khial Aicha and Azizi Cherifa and Djeffal Fay{\c c}al}
}
@article {4066,
	title = {Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis, ISSN / e-ISSN 1530-437X / 1558-1748},
	journal = {IEEE Sensors Journal},
	volume = { Volume 16},
	number = {Issue 11 },
	year = {2016},
	pages = {pp 4180 - 4191},
	abstract = {In this paper, new sensors based on a double-gate (DG) graphene nanoribbon field-effect transistor (GNRFET), for high-performance DNA and gas detection, are proposed through a simulation-based study. The proposed sensors are simulated by solving the Schr{\"o}dinger equation using the mode space non-equilibrium Green{\textquoteright}s function formalism coupled self-consistently with a 2D Poisson equation under the ballistic limits. The dielectric and work function modulation techniques are used for the electrical detection of DNA and gas molecules, respectively. The behaviors of both the sensors have been investigated, and the impacts of variation in geometrical and electrical parameters on the sensitivity of sensors have also been studied. In comparison to other FET-based sensors, the proposed sensors provide not only higher sensitivity but also better electrical and scaling performances. The obtained results make the proposed DG-GNRFET-based sensors as promising candidates for ultra-sensitive, small-size, low-power and reliable CMOS-based DNA, and gas sensors.},
	url = {https://ieeexplore.ieee.org/document/7447665},
	author = {Tamersit Khalil and Djeffal Fay{\c c}al}
}
@article {4065,
	title = {Performance enhancement of Pt/TiO 2/Si UV-photodetector by optimizing light trapping capability and interdigitated electrodes geometry, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume 97},
	year = {2016},
	pages = {pp 303-312},
	abstract = {
	
		This paper presents a hybrid approach based on an analytical and metaheuristic investigation to study the impact of the interdigitated electrodes engineering on both speed and optical performance of an Interdigitated Metal{\textendash}Semiconductor{\textendash}Metal Ultraviolet Photodetector (IMSM-UV-PD). In this context, analytical models regarding the speed and optical performance have been developed and validated by experimental results, where a good agreement has been recorded. Moreover, the developed analytical models have been used as objective functions to determine the optimized design parameters, including the interdigit configuration effect, via a Multi-Objective Genetic Algorithm (MOGA). The ultimate goal of the proposed hybrid approach is to identify the optimal design parameters associated with the maximum of electrical and optical device performance. The optimized IMSM-PD not only reveals superior performance in terms of photocurrent and response time, but also illustrates higher optical reliability against the optical losses due to the active area shadowing effects. The advantages offered by the proposed design methodology suggest the possibility to overcome the most challenging problem with the communication speed and power requirements of the UV optical interconnect: high derived current and commutation speed in the UV receiver.
	

},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603616302828},
	author = {Bencherif Hichem and Djeffal Fay{\c c}al and Ferhati Hichem}
}
@article {4042,
	title = {Improved analog/RF performance of double gate junctionless MOSFET using both gate material engineering and drain/source extensions, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume 92},
	year = {2016},
	pages = {pp 80-91},
	abstract = {In this paper, we propose a new Double Gate Junctionless (DGJ) MOSFET design based on both gate material engineering and drain/source extensions. Analytical models for the long channel device associated to the drain current, analog and radio-frequency (RF) performance parameters are developed incorporating the impact of dual-material gate engineering and two highly doped extension regions on the analog/RF performance of DGJ MOSFET. The transistor performance figures-of-merit (FoM), governing the analog/RF behavior, have also been analyzed. The analog/RF performance is compared between the proposed design and a conventional DGJ MOSFET of similar dimensions, where the proposed device shows excellent ability in improving the analog/RF performance and provides higher drain current and improved figures-of-merit as compared to the conventional DGJ MOSFET. The obtained results have been validated against the data obtained from TCAD software for a wide range of design parameters. Moreover, the developed analytical models are used as mono-objective function to optimize the device analog/RF performance using Genetic Algorithms (GAs). In comparison with the reported numerical data for Inversion-Mode (IM) DG MOSFET, our optimized performance metrics for JL device exhibit enhancement over the reported data for IM device at the same channel length.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603616300520},
	author = {E.Chebaki and Djeffal Fay{\c c}al and Ferhati Hichem and Bentrcia Toufik}
}
@article {4041,
	title = {Improved analog and RF performances of gate-all-around junctionless MOSFET with drain and source extensions, ISSN 0749-6036},
	journal = {Superlattices and Microstructures},
	volume = {Volume 90},
	year = {2016},
	pages = {pp 132-140},
	abstract = {In this paper, the analytical investigation of a new design including drain and source extensions is presented to assess the electrical behavior of cylindrical gate-all-around junctionless (GAAJ) MOSFET for high performance RF and analog applications. Analytical models for drain current and performance parameters are derived incorporating the effect of two highly doped extension regions. Various analog and RF parameters like transconductance, cut-off frequency, drain current drivability, voltage gain and linearity characteristics have also been investigated. The proposed design shows excellent ability in improving the analog performance and provides a good solution to enhance the RF behavior and linearity of GAAJ MOSFET for low cost and high performance analog/RF applications. The proposed model results have been validated against the data obtained from a commercially available numerical device simulator. Moreover, the developed analytical approaches are easy to be implemented into microelectronic software simulators and therefore allow the study of the GAAJ-based deep submicron circuits},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0749603615302056},
	author = {Djeffal Fay{\c c}al and Ferhati Hichem and Bentrcia Toufik}
}
@article {4037,
	title = {An Efficient Fault-Tolerant Multi-Bus Data Scheduling Algorithm Based on Replication and Deallocation, ISSN  / e- ISSN 1311-9702  /  1314-4081},
	journal = {Cybernetics and Information Technologies},
	volume = {Volume 16},
	number = {N{\textdegree} 2},
	year = {2016},
	abstract = {The paper proposes a new reliable fault-tolerant scheduling algorithm for real-time embedded systems. The proposed scheduling algorithm takes into consideration only one bus fault in multi-bus heterogeneous architectures, caused by hardware faults and compensated by software redundancy solutions. The proposed algorithm is based on both active and passive backup copies, to minimize the scheduling length of data on buses. In the experiments, this paper evaluates the proposed methods in terms of data scheduling length for a set of DAG benchmarks. The experimental results show the effectiveness of our technique.},
	url = {https://www.researchgate.net/publication/304375372_An_Efficient_Fault-Tolerant_Multi-Bus_Data_Scheduling_Algorithm_Based_on_Replication_and_Deallocation},
	author = {Arar Chafik and Khireddine Mohamed Salah}
}
@article {4036,
	title = {Hybrid Software Redundancy Approach for Building Reliable Communication in Multi-BUS Heterogeneous Systems, ISSN / e-ISSN 0218-5393 / 1793-6446},
	journal = {International Journal of Reliability, Quality and Safety Engineering},
	volume = {Volume 23},
	number = {N{\textdegree} 4},
	year = {2016},
	pages = { pp 1650013},
	abstract = {The paper proposes a new reliable fault-tolerant scheduling algorithm for real-time embedded systems. The proposed algorithm is based on static scheduling that allows to include the dependencies and the execution cost of tasks and data dependencies in its scheduling decisions. Our scheduling algorithm is dedicated to multi-bus heterogeneous architectures with multiple processors linked by several shared buses. This scheduling algorithm is considering only one bus fault caused by hardware faults and compensated by software redundancy solutions. The proposed algorithm is based on both active and passive backup copies to minimize the scheduling length of data on buses. In the experiments, the proposed methods are evaluated in terms of data scheduling length for a set of DSP benchmarks. The experimental results show the effectiveness of our technique.},
	url = {https://www.worldscientific.com/doi/abs/10.1142/S0218539316500133},
	author = {Arar Chafik and Khireddine Mohamed Salah}
}
@article {4035,
	title = {A feed forward neural network MPPT control strategy applied to a modified cuk converter, ISSN 2088-8708},
	journal = {International Journal of Electrical and Computer Engineering},
	volume = {Volume 6},
	number = {N{\textdegree}4},
	year = {2016},
	pages = {pp 1421-1433},
	abstract = {This paper presents an intelligent control strategy that uses a feedforward artificial neural network in order to improve the performance of the MPPT (Maximum Power Point Tracker) MPPT photovoltaic (PV) power system based on a modified Cuk converter. The proposed neural network control (NNC) strategy is designed to produce regulated variable DC output voltage. The mathematical model of Cuk converter and artificial neural network algorithm is derived. Cuk converter has some advantages compared to other type of converters. However the nonlinearity characteristic of the Cuk converter due to the switching technique is difficult to be handled by conventional controller. To overcome this problem, a neural network controller with online learning back propagation algorithm is developed. The NNC designed tracked the converter voltage output and improve the dynamic performance regardless load disturbances and supply variations. The proposed controller effectiveness during dynamic transient response is then analyze and verified using MATLAB-Simulink. Simulation results confirm the excellent performance of the proposed NNC technique for the studied PV system.\&nbsp;},
	url = {https://www.researchgate.net/publication/309114424_A_Feed_forward_Neural_Network_MPPT_Control_Strategy_Applied_to_a_Modified_Cuk_Converter},
	author = {Mohamed Tahar Makhloufi and Abdessemed Yassine and Khireddine Mohamed Salah}
}
@article {4030,
	title = {An efficient ANN-based MPPT optimal controller of a DC/DC boost converter for photovoltaic systems, ISSN / e-ISSN 0005-1144 / 1848-3380},
	journal = {Automatika},
	volume = {Volume 57},
	number = {Issue 1},
	year = {2016},
	pages = {Pages 109-119 },
	abstract = {In this paper, a simulation study of the maximum power point tracking (MPPT) for a photovoltaic system using an artificial neural network is presented. Maximum power point tracking (MPPT) plays an important role in photovoltaic systems because it maximizes the power output from a PV solar system for all temperature and irradiation conditions, and therefore maximizes the power efficiency. Since the maximum power point (MPP) varies, based on the PV irradiation and temperature, appropriate algorithms must be utilized to track it in order maintain the optimal operation of the system. The software Matlab/Simulink is used to develop the model of PV solar system MPPT controller. The system simulation is elaborated by combining the models established of solar PV module and a DC/DC Boost converter. The system is studied using various irradiance shading conditions. Simulation results show that the photovoltaic simulation system tracks optimally the maximum power point even under severe disturbances conditions.},
	url = {https://www.tandfonline.com/doi/abs/10.7305/automatika.2016.07.798},
	author = {Mohamed Tahar Makhloufi and Abdessemed Yassine and Khireddine Mohamed Salah}
}
@article {4026,
	title = {An improved back propagation algorithm for training neural network-based equaliser for signal restoration in digital communication channels},
	journal = {International Journal of Mobile Network Design and Innovation },
	volume = {6},
	number = {4},
	year = {2016},
	pages = {236 - 244},
	abstract = {
	The back propagation (BP) algorithm has been very successful in training multilayer perceptron-based equalisers; despite its success BP convergence is still too slow. Within this paper we present a new approach to enhance the training efficiency of the multilayer perceptron-based equaliser (MLPE). Our approach consists on modifying the conventional back propagation algorithm, through creating an adaptive nonlinearity in the activation function. Experiment results evaluates the performance of the MLPE trained using the conventional BP and the improved back propagation with adaptive gain (IBPAG). Due to the adaptability of the activation function gain the nonlinear capacity and flexibility of the MLP is enhanced significantly. Therefore, the convergence properties of the proposed algorithm are more improved compared to the BP. The proposed algorithm achieves the best performance in the entire simulation experiments.

},
	url = {https://www.researchgate.net/publication/312665945_An_improved_back_propagation_algorithm_for_training_neural_network-based_equaliser_for_signal_restoration_in_digital_communication_channels},
	author = {Zerdoumi,  Zohra and Chikouche, Djamel and Benatia, Djamel}
}
@article {4025,
	title = {Study of the Impact of Non-linear Piezoelectric Constants on the Acoustic Wave Propagationon Lithium Niobate},
	journal = {Journal of Nano- and Electronic Physics},
	volume = {8},
	number = {2},
	year = {2016},
	pages = {02013-1 -  02013-5},
	abstract = {
	Impact of nonlinear piezoelectric constants on surface acoustic wave propagation on a piezoelectric substrate is investigated in this work. Propagation of acoustic wave propagation under uniform stress is analyzed; the wave equation is obtained by incorporating the applied uniform stress in the equation of motion and taking account of the set of linear and nonlinear piezoelectric constants. A new method of separation between the different modes of propagation is proposed regarding the attenuation coefficients and not to the displacement vectors. Detail calculations and simulations have made for Lithium Niobate (LiNbO3); transformations between modes of propagation, under uniform stress, have been found. These results leads to conclusion that nonlinear terms affect the acoustic wave propagation and also we can make controllable acoustic devices.

},
	url = {https://www.researchgate.net/publication/304368011_Study_of_the_Impact_of_Non-linear_Piezoelectric_Constants_on_the_Acoustic_Wave_Propagation_on_Lithium_Niobate},
	author = {Chaabane Soumali and Benatia, Djamel}
}
@article {4023,
	title = {Multilayer Perceptron Based Equalizer with an Improved Back Propagation Algorithm for Nonlinear Channels},
	journal = {International Journal of Mobile Computing and Multimedia Communications},
	volume = {7},
	number = {3},
	year = {2016},
	pages = {16-31},
	abstract = {
	Neural network based equalizers can easily compensate channel impairments; such additive noise and inter symbol interference (ISI). The authors present a new approach to improve the training efficiency of the multilayer perceptron (MLP) based equalizer. Their improvement consists on modifying the back propagation (BP) algorithm, by adapting the activation function in addition to the other parameters of the MLP structure. The authors report on experiment results evaluating the performance of the proposed approach namely the back propagation with adaptive activation function (BPAAF) next to the BP algorithm. To further prove its effectiveness, the proposed approach is also compared beside a so known nonlinear equalizer explicitly the multilayer perceptron with decision feedback equalizer MLPDFE. The authors consider various performance measures specifically: signal resorted quality, lower steady state MSE reached and minimum bit error rate (BER) achieved, where nonlinear channel equalization problems are employed.

},
	url = {https://www.researchgate.net/publication/310515907_Multilayer_Perceptron_Based_Equalizer_with_an_Improved_Back_Propagation_Algorithm_for_Nonlinear_Channels},
	author = {Zerdoumi,  Zohra and Chikouche, Djamel and Benatia, Djamel}
}
@article {4010,
	title = {High-Tc superconducting rectangular microstrip patch covered with a dielectric layer, e-ISSN 0921-4534},
	journal = {Physica C: Superconductivity and Its Applications},
	volume = {Volume 524},
	year = {2016},
	pages = {pp 31-36},
	abstract = {This paper presents a full-wave method to calculate the resonant characteristics of rectangular microstrip antenna with and without dielectric cover, to explain the difference of performance with temperature between superconducting and normal conducting antenna. Especially the characteristics of high temperature superconducting (HTS) antenna were almost ideal around the critical temperature (Tc). The dyadic Green{\textquoteright}s functions of the considered structure are efficiently determined in the vector Fourier transform domain. The effect of the superconductivity of the patch is taken into account using the concept of the complex resistive boundary condition. The computed results are found to be in good agreement with results obtained using other methods. Also, the effects of the superstrate on the resonant frequency and bandwidth of rectangular microstrip patch in a substrate{\textendash}superstrate configuration are investigated. This type of configuration can be used for wider bandwidth by proper selection of superstrate thickness and its dielectric constants.},
	url = {https://www.sciencedirect.com/science/article/abs/pii/S0921453416300028},
	author = {Bedra Sami and Fortaki Tarek}
}
@article {4009,
	title = {Analysis of elliptical-disk microstrip patch printed on isotropic or anisotropic substrate materials},
	journal = {International Journal of Microwave and Wireless Technologies},
	volume = {8},
	number = {2},
	year = {2016},
	pages = {251-255},
	abstract = {
	This paper presents a simple approach for accurate determination of the resonant frequency of an elliptical microstrip patch printed on isotropic or anisotropic substrate materials. In this approach, some modifications are made to account for fringe fields, dispersion effects, and losses by calculating effective dimensions, effective permittivity of anisotropy in the layer, and effective loss tangent, respectively. The theoretical resonant frequency results are in very good agreement with the experimental results reported elsewhere. Numerical results show that the change in the resonant frequency of the antenna is due primarily to a small disturbance of the substrate{\textquoteright}s nature. Then the effect of the uniaxial anisotropic materials is a significant parameter and most essential on the microstrip antenna characterization.

},
	url = {https://www.cambridge.org/core/journals/international-journal-of-microwave-and-wireless-technologies/article/analysis-of-ellipticaldisk-microstrip-patch-printed-on-isotropic-or-anisotropic-substrate-materials/63B277B000979B1133CAE0C6FB58D24F},
	author = {Bedra , Randa and Bedra, Sami and Fortaki , Tarek}
}
@article {4007,
	title = {Miniature low profile UWB antenna: new techniques for bandwidth enhancement and radiation pattern stability, e-ISSN 1098-2760},
	journal = {Microwave and Optical Technology Letters},
	volume = {Volume 58},
	number = {N{\textdegree}8},
	year = {2016},
	pages = {pp 1808-1813},
	abstract = {A miniature (30 {\texttimes} 10 mm2) efficient planar monopole antenna with stable radiation pattern for UWB applications (3.1-10.6 GHz) is proposed in this paper. These characteristics, wide bandwidth and radiation stability, are achieved by using original design solutions with maintaining a small size and good efficiency of the system. Based on modified ground plane and loop feeding structure, the first design solution consist to propose a simple technique which not requires any discrete additional elements or circuits and does not affect the overall dimensions of the basic structure. This technique enhances the (-6 dB) bandwidth of the planar monopole antenna by approximately 50\% compared to the basic structure while maintaining the same dimension (30 {\texttimes} 10 mm2). The optimized proposed antenna presents a large bandwidth, good radiation stability, total efficiency higher than 70\% over the entire band and small size (30 {\texttimes} 10 mm2) which will enable to use it in different UWB applications. In the second step, two L slots are added in the printed circuit board of the proposed UWB antenna to reach a good stability of the radiation pattern on the overall desired band.},
	url = {https://www.researchgate.net/publication/303597970_Miniature_low_profile_UWB_antenna_New_techniques_for_bandwidth_enhancement_and_radiation_pattern_stability},
	author = {Addaci Rafik and Fortaki Tarek}
}
@article {3993,
	title = {Resonant and Radiation Characteristics of Rectangular Microstrip Patch Antenna on Suspended-Composite Substrates, ISSN 1054-4887},
	journal = {Applied Computational Electromagnetics Society Journal },
	volume = {volume 31},
	number = {N{\textdegree}2},
	year = {2016},
	pages = {pp 138-142},
	abstract = {In this paper, the resonance and radiation characteristics of rectangular microstrip patch printed on suspended and composite substrates are investigated theoretically. The analysis approach is based on the spectral-domain method of moments in conjunction with the stationary phase method. The complex resonant frequency of the microstrip antenna on suspended and composite substrates is studied with sinusoidal functions as basis functions, which show fast numerical convergence. Using a matrix representation of each layer, the far-field pattern of the suspended-composite configuration is efficiently determined by the (TM, TE) representation. The validity of the solution is tested by comparison of the computed results with experimental data. Finally, numerical results for the effects of suspended and composite substrates on the resonant frequency and half-power bandwidth are also presented.},
	url = {https://www.researchgate.net/publication/300335944_Resonant_and_Radiation_Characteristics_of_Rectangular_Microstrip_Patch_Antenna_on_Suspended-Composite_Substrates},
	author = {Bedra Sami and Fortaki Tarek}
}
@article {3970,
	title = {Telescopic Op-Amp Optimization for MDAC Circuit Design, ISSN / e-ISSN 1450-5843},
	journal = {Electronics},
	volume = {volume 20},
	number = { issue 2},
	year = {2016},
	pages = {pp  55-61},
	abstract = {An 8-bit 40-MS/s low power Multiplying Digital-toAnalog Converter (MDAC) for a pipelined-to-Analog to Digital converter (ADC) is presented.The conventional dedicated operational amplifier (Op-Amp) isperformed by using telescopic architecture that features low power and less-area. Further reduction of power and area is achieved by using multifunction 1.5bit/stage MDAC architecture. The design of the Op-Amp is performed by the elaboration of a program based on multiobjective genetic algorithms to allow automated optimization. The proposed program is used tofind the optimal transistors sizes (length and width) in order to obtain the best Op-Amp performances for the MDAC. In this study, six performances are considered, direct current gain, unity-gain bandwidth, phase margin, power consumption, area, slew rate, thermal noise, and signal to noise ratio. The Matlab optimization toolbox is used to implement the program. Simulations were performed by using Cadence Virtuoso Spectre circuit simulator in standard AMS 0.18μm CMOS technology. A goodagreement is observed between the results obtained bythe program optimization and simulation, after that the Op-Ampis introduced in the MDAC circuit to extract its performances.},
	url = {https://www.researchgate.net/publication/312069518_Telescopic_Op-Amp_optimization_for_MDAC_circuit_design},
	author = {Dendouga Abdelghani and Oussalah Slimane}
}
