@article {6786,
	title = {Suppression of Ambipolar Current and Analysis of RF Performance in Double Gate Tunneling Field Effect Transistors for Low-Power Applications},
	journal = {International Journal of Nanoparticles and Nanotechnology},
	year = {2020},
	abstract = {
	The present research letter is dedicated to a detailed analysis of a double-gate tunnel field-effect transistor (DG-TFET). The DG-TFET provides improved on-current (ION) than a conventional TFET via bandto-band (B2B) tunneling. However, DG-TFET is disadvantageous for low-power applications because of increased off-current (IOFF) due to the large ambipolar current (Iamb). In this research work, a Si/GaAs/ GaAs heterostructure DG-TFET is considered as research base for investigation of device performance. The electrical parameters of the DG-TFET device have been improved in comparison to the homostructure. The transfer (I-V) characteristics, capacitance - voltage (C-V) characteristic of homo structure Si/ Si/Si and hetero structure Si/GaAs/GaAs, DG-TFET both structures is analysed comparatively. The C-V characteristics of DG-TFET have obtained using operating frequency of 1 MHz. The ambipolar current Iamb is suppressed by 5 {\texttimes} 108 order of magnitude in proposed Si/GaAs/GaAs hetero DG-TFET as compared to Si/Si/Si homo DG-TFET up to the applied drain voltage very low equal to VDS = 0.5 V without affecting on- state performance. The simulation result shows a very good ION/IOFF ratio (1013) and low subthreshold slope, SS (~36.52 mV/dec). The various electrical characteristics of homo and hetero DGTFET such as on-current (ION), off - current (IOFF), time delay (ιd ), transconductance (gm) , and power delay product (PDP) have been improve in Si/GaAs/GaAs heterostructure DG-TFET and compared with Si/Si/ Si homo DG-TFET. The advantageous results obtained for the proposed design show its usability in the field of digital and analog applications.

},
	url = {https://pdfs.semanticscholar.org/775f/73691357064bbce80917bd3353cc26aeeb1b.pdf},
	author = {Naima Guenifi and Rahi, SB and Larbi,  M}
}
