@article {6778,
	title = {Impact of Dielectric Engineering on Analog/RF and Linearity Performance of Double Gate Tunnel FET},
	journal = {International Journal of Nanoelectronics and Materials},
	year = {2021},
	abstract = {
	Tunnel FETisone of thealternativedevicefor low power electronics having steep subthreshold swing and lower leakage current than conventional MOSFET. In this research work, we have implemented the idea of high -k gate dielectric ondouble gate Tunnel FET, DG-TFETfor improvement of device features.An extensive investigation for the analog/RF and linearity feature of DG-TFET has been donehere for low power circuit and system development.Several essential analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS) its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain band width product (GBW), transconductance generation factor (gm/IDS) has been investigated for low power RF applications.The VIP2, VIP3, IMD3, IIP3, distortion characteristics (HD2, HD3), 1- dB the compression point, delay and power delay product performancehave also been throughly studied.It has been observed that the device features discussed for circuitry applications are found to be sensitiveto of gate materials, design configuration and input signals.

},
	url = {https://ijneam.unimap.edu.my/images/PDF/ijneam\%20july\%202021\%20pdf/IJNEAM2021012\%20Accepted.pdf},
	author = {Naima Guenifi and Shiromani, Balmukund Rahi and Boussahla, G}
}
