@article {6775,
	title = {Conduction Band Offset Effect on the Cu2ZnSnS4 Solar Cells Performance},
	journal = {Annales de Chimie - Science des Mat{\'e}riaux },
	volume = {45},
	number = {6},
	year = {2021},
	pages = {431-437 },
	abstract = {
	Among the causes of the degradation of the performance of kesterite-based solar cells is the wrong choice of the n-type buffer layer which has direct repercussions on the unfavorable band alignment, the conduction band offset (CBO) at the interface of the absorber/buffer junction which is one of the major causes of lower VOC. In this work, the effect of CBO at the interface of the junction (CZTS/Cd(1-x)ZnxS) as a function of the x composition of Zn with respect to (Zn+Cd) is studied using the SCAPS-1D simulator package. The obtained results show that the performance of the solar cells reaches a maximum values (Jsc = 13.9 mA/cm2 , Voc = 0.757 V, FF = 65.6\%, ɳ = 6.9\%) for an optimal value of CBO = -0.2 eV and Zn proportion of the buffer x = 0.4 (Cd0.6Zn0.4S). The CZTS solar cells parameters are affected by the thickness and the concentration of acceptor carriers. The best performances are obtained for CZTS absorber layer, thichness (d = 2.5 {\textmu}m) and (ND = 1016 cm-3 ). The obtained results of optimizing the electron work function of the back metal contact exhibited an optimum value at 5.7 eV with power conversion efficiency of 13.1\%, Voc of 0.961 mV, FF of 67.3\% and Jsc of 20.2 mA/cm2 .

},
	url = {http://iieta.org/journals/acsm},
	author = {Latrous, Ahmed Redha and R amdane Mahamdi and Touafek, Naima and Pasquinelli, Marcel}
}
