@article {4089,
	title = {Numerical investigation of nanoscale double-gate junctionless MOSFET with drain and source extensions including interfacial defects, ISSN / e-ISSN 1862-6351 / 1610-1642},
	journal = {Physica Status Solidi {\textcopyright} Current Topics in Solid State Physics},
	volume = {13},
	number = {4},
	year = {2016},
	pages = {151-155},
	abstract = {
	The use of uniformly doped channel, source and drain regions presents the well-known problem of the high series resistance associated to the extensions, which degrades the electrical performance of the nanoscale multi-gate junctionless MOSFETs. Therefore, new designs and accurate investigation of nanoscale double gate junctionless (DGJ) MOSFET including the defects at the interface Si/SiO2 are required for the comprehension of the fundamentals of such device behavior against the ageing phenomenon. Based on 2D numerical investigation of a nanoscale DGJ MOSFET, in the present work a numerical study for I-V and small signal characteristics, by including both the highly doped extension regions and the interfacial defects, is presented. The investigated design, which is a technologically feasible technique by introducing only one ion implantation step, provides a good solution to improve the device immunity against the interfacial defects under critical conditions, where the channel length is taken equals to 10 nm. In this context, I-V, analog and linearity characteristics are investigated by an appropriate 2-D numerical modeling, where the obtained results are compared with those of the conventional DGJ MOSFETs. ({\textcopyright} 2016 WILEY-VCH Verlag GmbH \&amp; Co. KGaA, Weinheim)

},
	url = {https://www.researchgate.net/publication/298899546_Numerical_investigation_of_nanoscale_double-gate_junctionless_MOSFET_with_drain_and_source_extensions_including_interfacial_defects},
	author = {Toufik Bentrcia and Fay{\c c}al Djeffal and Arar,  Djemai and Mohamed Meguellati}
}
