@article {4067,
	title = {Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, ISSN 1569-8025},
	journal = {Journal of Computational Electronics},
	volume = {Volume 15},
	year = {2016},
	pages = {pp 1308-1315},
	abstract = {The influence of gate dielectric materials on the performance of a carbon nanotube field-effect transistor has been studied by a numerical simulation model. This model is based on a two-dimensional nonequilibrium Green{\textquoteright}s function formalism performed with the self-consistent solution of the Poisson and Schr{\"o}dinger equations. The device performance is investigated in terms of leakage current, on-state current, ION/IOFF current ratio, subthreshold slope, drain-induced barrier lowering, as well as transconductance, drain conductance, and intrinsic gate delay. This study is carried out over a wide range of dielectric permittivities at low temperatures ranging from room temperature down to 100\&nbsp;K.},
	url = {https://link.springer.com/article/10.1007/s10825-016-0901-7},
	author = {Rechem Djamil and Khial Aicha and Azizi Cherifa and Djeffal Fay{\c c}al}
}
