@article {4045,
	title = {Reliability Investigation of Nanoscale Junctionless GAA MOSFET Against Degradation-Related Ageing Effects, Journal of Nanoelectronics and Optoelectronics, ISSN / e-ISSN 1555-130X / 1555-1318},
	journal = { Journal of Nanoelectronics and Optoelectronics},
	volume = {Volume 13},
	number = {N{\textdegree} 7 },
	year = {2018},
	pages = {pp 1106-1113},
	abstract = {In this work, we present a comprehensive investigation of JL-GAA MOSFET including degradation-related ageing effects to study the nanoscale JL-GAA MOSFET reliability against the ageing phenomenon. A quantitative analysis of the device reliability behavior is carried out, in order to show the impact of the ageing effects on the device performance for digital applications. Moreover, the effect of the stress time on the device subthreshold behavior including the threshold voltage, DIBL and swing factor is elucidated, where the degradation related-ageing effects is represented by a new current generator in the opposite direction that describes the exponential degradation of the current as function of the stress time. Further, the role of introducing a high-k layer on the gate oxide in improving the JL-GAA MOSFET immunity against the degradation-related ageing effects is analyzed, where the proposed structure exhibits an excellent immunity against the ageing effects. In order to show the impact of the proposed approach on the nanoelectronic circuits designing, the developed model has been implemented to study the performance behavior of voltage amplifier circuit including degradation-related ageing effects. Therefore, the proposed approach can offer new insights regarding the investigation and simulation of the nanoelectronic circuits including the degradation-related ageing effects.},
	url = {https://www.ingentaconnect.com/content/asp/jno/2018/00000013/00000007/art00020},
	author = {Ferhati Hichem and Djeffal Fay{\c c}al}
}
