@article {3964,
	title = {A new smart nanoforce sensor based on suspended gate SOIMOSFET using carbon nanotube ISSN / e-ISSN 0263-2241 / 1873- 412X},
	journal = {Measurement},
	volume = {Volume 125},
	year = {2018},
	pages = { Pages 232-242},
	abstract = {This paper presents a new nanoforce sensor based on a suspended carbon\&nbsp;nanotube\&nbsp;gate\&nbsp;field-effect transistor. To do so, a numerical investigation of Suspended Gate\&nbsp;Silicon-on-Insulator\&nbsp;MOSFET\&nbsp;(SG-SOIMOSFET) is carried out using ATLAS 2D simulator. Based on the relationship between the nanotube{\textquoteright}s deflection and the applied force, a comprehensive study of the proposed nanoforce sensor behavior is performed. Moreover, we describe the evolution of the drain current characteristics as a function of the applied force while examining the influence of capacity variation of the insulating gate on the drain current in the\&nbsp;saturation region. It is found that the sensor has a good sensitivity of 230.68 ln(A)/pN. Our second contribution in this paper is to develop a model based on\&nbsp;artificial neural networks\&nbsp;(ANNs). We successfully integrate our\&nbsp;neural model\&nbsp;of nanoforce sensor as a new component in the ORCAD-PSPICE electric simulator library; this component must accurately express the behavior of the sensor. A second model based on\&nbsp;neural networks, which deals with correction and\&nbsp;linearization\&nbsp;of the sensor output signal, is designed and implemented into the same simulator. The proposed device can be considered as a potential alternative for CMOS-based nanoforce sensing.},
	url = {https://www.sciencedirect.com/science/article/pii/S0263224118303452},
	author = {F.Menacer and Dibi Zohir and A.Kadri and Djeffal Fay{\c c}al}
}
