<?xml version="1.0" encoding="UTF-8"?><xml><records><record><source-app name="Biblio" version="7.x">Drupal-Biblio</source-app><ref-type>17</ref-type><contributors><authors><author><style face="normal" font="default" size="100%">A BOUSSAHA</style></author><author><style face="normal" font="default" size="100%">Makhloufi, R</style></author><author><style face="normal" font="default" size="100%">S MADANI</style></author></authors></contributors><titles><title><style face="normal" font="default" size="100%">Displacement fields influence analysis caused by dislocation networks at a three layer system interfaces on the surface topology</style></title><secondary-title><style face="normal" font="default" size="100%">Journal of Solid Mechanics</style></secondary-title></titles><dates><year><style  face="normal" font="default" size="100%">2019</style></year></dates><urls><web-urls><url><style face="normal" font="default" size="100%">http://jsm.iau-arak.ac.ir/article_666766_1132799.html</style></url></web-urls></urls><publisher><style face="normal" font="default" size="100%">Islamic Azad University-Arak Branch</style></publisher><volume><style face="normal" font="default" size="100%">11</style></volume><pages><style face="normal" font="default" size="100%">606-614</style></pages><isbn><style face="normal" font="default" size="100%">2008-3505</style></isbn><language><style face="normal" font="default" size="100%">eng</style></language><abstract><style face="normal" font="default" size="100%">&lt;p style=&quot;text-align: justify;&quot;&gt;
	This work consists in a numerically evaluation of elastic fields distribution, caused by intrinsic dislocation networks placed at a nanometric trilayers interfaces, in order to estimate their influence on the surface topology during heterostructure operation. The organization of nanostructures is ensured by the knowledge of different elastic fields caused by buried dislocation networks and calculated in the case of anisotropic elasticity. The influence of elastic fields generated by induced square and parallel dislocation networks at&amp;nbsp;&lt;em&gt;CdTe&lt;/em&gt;&amp;nbsp;/&amp;nbsp;&lt;em&gt;GaAs&lt;/em&gt;&amp;nbsp;/ (001)&amp;nbsp;&lt;em&gt;GaAs&lt;/em&gt;&amp;nbsp;trilayer interfaces was investigated. By deposition, the nanostructures organization with respect to the topology was controled.&amp;nbsp;&amp;nbsp;
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</style></abstract><issue><style face="normal" font="default" size="100%">3</style></issue></record></records></xml>